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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Mechanistic Investigation of Molybdenum Disulfide Defect Photoluminescence Quenching by Adsorbed Metallophthalocyanines

Lattice defects play an important role in determining the optical and electrical properties of monolayer semiconductors such as MoS 2 . Although the structures of various defects in monolayer MoS 2 are well studied, little is known about the nature of the fluorescent defect species and their interaction with molecular adsorbates. In this study, the quenching of the low-temperature defect photoluminescence (PL) in MoS 2 is investigated following the deposition of metallophthalocyanines (MPcs). The quenching is found to significantly depend on the identity of the phthalocyanine metal, with the quenching efficiency decreasing in the order CoPc > CuPc > ZnPc, and almost no quenching by metal-free H 2 Pc is observed. Futher, time-correlated single photon counting (TCSPC) measurements corroborate the observed trend, indicating a decrease in the defect PL lifetime upon MPc adsorption, and the gate voltage-dependent PL reveals the suppression of the defect emission even at large Fermi level shifts. Density functional theory modeling argues that the MPc complexes stabilize dark negatively charged defects over luminescent neutral defects through an electrostatic local gating effect. These results demonstrate the control of defectbased excited-state decay pathways via molecular electronic structure tuning, which has broad implications for the design of mixeddimensional optoelectronic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

The Single Residue K12 Governs the Exceptional Voltage Sensitivity of Mitochondrial Voltage-Dependent Anion Channel Gating

The voltage-dependent anion channel (VDAC) is a β-barrel channel of the mitochondrial outer membrane (MOM) that passively transports ions, metabolites, polypeptides, and single-stranded DNA. VDAC responds to a transmembrane potential by “gating,” i.e. transitioning to one of a variety of low-conducting states of unknown structure. The gated state results in nearly complete suppression of multivalent mitochondrial metabolite (such as ATP and ADP) transport, while enhancing calcium transport. Voltage gating is a universal property of β-barrel channels, but VDAC gating is anomalously sensitive to transmembrane potential. Here, we show that a single residue in the pore interior, K12, is responsible for most of VDAC’s voltage sensitivity. Using the analysis of over 40 μs of atomistic molecular dynamics (MD) simulations, we explore correlations between motions of charged residues inside the VDAC pore and geometric deformations of the β-barrel. Residue K12 is bistable; its motions between two widely separated positions along the pore axis enhance the fluctuations of the β-barrel and augment the likelihood of gating. Single channel electrophysiology of various K12 mutants reveals a dramatic reduction of the voltage-induced gating transitions. The crystal structure of the K12E mutant at a resolution of 2.6 Å indicates a similar architecture of the K12E mutant to the wild type; however, 60 μs of atomistic MD simulations using the K12E mutant show restricted motion of residue 12, due to enhanced connectivity with neighboring residues, and diminished amplitude of barrel motions. We conclude that β-barrel fluctuations, governed particularly by residue K12, drive VDAC gating transitions.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2026

The Impact of Operational Strategies and Load Fluctuations on Anion Exchange Membrane Water Electrolyzer Degradation

This study reports on the durability of anion exchange membrane water electrolyzers (AEMWEs) at the cell level in a supporting electrolyte (1 M) and the impact of operational profiles on cell degradation. While constant load shows significant voltage loss, including a current hold at 1 A cm −2 and a potential hold at 2 V, it generally occurs in the first 70 h of testing. These losses are likely due to passivation altering site reactivity and cell kinetics, and are largely recoverable upon load cycling and diagnostics at the end of test. Furthermore, square and triangular-wave cycling do not show cell degradation and indicate that AEMWEs are not vulnerable to load cycling. When operating outside of this potential window (1.45–2 V), cell voltage decay rates markedly increase and the losses are not recoverable. This includes a current density hold at 4.0 A cm −2 with high cell voltages (>2.4 V for test duration) and cycling between 0 and 2 V to simulate start–stop, where more than a 50% loss in current density occurs over 50 h. The findings presented here demonstrate the high durability of AEMWEs, particularly when operating with load fluctuations, and may allow for durability advantages compared to iridium and proton exchange membrane systems.

08 HYDROGEN↗
DOE OSTI2024

Voltage-induced magnetic domain evolution in a phase-change material

Applying voltage to metal–insulator transition (MIT) materials allows electrical actuation of the local electronic phase state. In MIT systems that have the electronic order coupled with the magnetic order, voltage switching of the electronic phase state can also enable the electrical manipulation of magnetic properties. In this work, we utilized x-ray magnetic circular dichroism photoemission electron microscopy (XMCD-PEEM) to investigate the control of magnetic domain configurations in ferromagnetic MIT electrical switches. For applied voltages above a threshold value, the XMCD-PEEM images show that the magnetic domains separate into two distinct regions: one with a high contrast (white/black), indicating well-defined micrometer-scale magnetic domains with a component of their magnetization aligned parallel/antiparallel to the x-ray helicity, and the other with different shades of intermediate contrast (gray). Significant changes in magnetic domain configurations upon voltage biasing were only observed in these gray regions. Furthermore, the voltage-induced magnetic domain separation was found to be bias polarity-dependent, with the gray regions expanding from the opposite sample edge when the applied voltage polarity was reversed. This polarity-dependent electrical control of magnetic domain configurations during the MIT switching opens alternative opportunities in memory applications for magnetic MIT switching materials.

42 ENGINEERING↗
DOE OSTI2023

Quantitative Decoupling of Oxygen-Redox and Manganese-Redox Voltage Hysteresis in a Cation-Disordered Rock Salt Cathode

Pronounced voltage hysteresis in Li-excess cathode materials is commonly thought to be associated with oxygen redox. However, these materials often possess overlapping oxygen and transition-metal redox, whose contributions to hysteresis between charge and discharge are challenging to distinguish. In this work, a two-step aqueous redox titration is developed with the aid of mass spectrometry (MS) to quantify oxidized lattice oxygen and Mn 3+/4+ redox in a representative Li-excess cation-disordered rock salt—Li 1.2 Mn 0.4 Ti 0.4 O 2 (LMTO). Two MS-countable gas molecules evolve from two separate titrant-analyte reactions, thereby allowing Mn and O redox capacities to be decoupled. The decoupled O and Mn redox coulombic efficiencies are close to 100% for the LMTO cathode, indicating high charge-compensation reversibility. As incremental Mn and O redox capacities are quantitatively decoupled, each redox voltage hysteresis is further evaluated. Overall, LMTO voltage hysteresis arises not only from an intrinsic charge-discharge voltage mismatch related to O redox, but also from asymmetric Mn-redox overvoltages. The results reveal that O and Mn redox both contribute substantially to voltage hysteresis. In conclusion, this work further shows the potential of designing new analytical workflows to experimentally quantify key properties, even in a disordered material having complex local coordination environments.

25 ENERGY STORAGE↗
DOE OSTI2020

A Library of Atomically Thin 2D Materials Featuring the Conductive-Point Resistive Switching Phenomenon

Non-volatile resistive switching (NVRS) is a widely available effect in transitional metal oxides, colloquially known as memristors, and of broad interest for memory technology and neuromorphic computing. Until recently, NVRS was not known in other transitional metal dichalcogenides (TMDs), an important material class owing to their atomic thinness enabling the ultimate dimensional scaling. Here, various monolayer or few-layer 2D materials are presented in the conventional vertical structure that exhibit NVRS, including TMDs (MX 2 , M = transitional metal, e.g., Mo, W, Re, Sn, or Pt; X = chalcogen, e.g., S, Se, or Te), TMD heterostructure (WS2/MoS2), and an atomically thin insulator (h-BN). These results indicate the universality of the phenomenon in 2D non-conductive materials, and feature low switching voltage, large ON/OFF ratio, and forming-free characteristic. A dissociation–diffusion–adsorption model is proposed, attributing the enhanced conductance to metal atoms/ions adsorption into intrinsic vacancies, a conductive-point mechanism supported by first-principle calculations and scanning tunneling microscopy characterizations. Our results motivate further research in the understanding and applications of defects in 2D materials.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Material-dependent photon ionizing radiation effects in Si and GaAs PIN diodes: A numerical investigation

We present a finite-element drift-diffusion-Poisson model in the Multiphysics Object-Oriented Simulation Environment (MOOSE) framework to compare the radiation response of silicon (Si) and gallium arsenide (GaAs) PIN diodes under high-energy photon irradiation. The model solves coupled carrier continuity and Poisson’s equations with Shockley-Read-Hall recombination, and is verified against standard analytical J-V behavior. Using a simplified 1D geometry with ideal Ohmic contacts, we quantify device response under forward and reverse bias with a 100 MeV photon flux. Under forward bias, Si exhibits markedly greater radiation sensitivity than GaAs, including larger increases in current density, stronger local field and carrier-product perturbations, and higher recombination. Under reverse bias, GaAs shows larger radiation-induced photocurrent and broader current-density peaks near junctions, indicating an advantage for photodetection. Integrated steady-state recombination is consistently higher in Si across voltages. Under periodic photon pulses, GaAs produces higher-amplitude photoresponse and settles more rapidly than Si. These results highlight material-dependent trade-offs for radiation-tolerant, high-speed optoelectronics and provide guidance for selecting PIN architectures in aerospace, nuclear, and high-energy physics environments.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Effect of the neutral beam injector operational regime on the Alfven eigenmode saturation phase in DIII-D plasma

The aim of this study is to analyze the effect of the neutral beam injector (NBI) operation regime on the saturation phase of the Alfven Eigenmodes (AEs) in DIII-D plasma. Here, the analysis is done using the linear and nonlinear versions of the gyro-fluid code FAR3d. A set of parametric analyses are performed modifying the nonlinear simulation EP $β$ (NBI injection power), EP energy (NBI voltage) and the radial location of the EP density profile gradient (NBI radial deposition). The analysis indicates a transition from the soft (local plasma relaxation) to the hard MHD (global plasma relaxation) limit if the simulation EP $β$ $\unicode{x2A7E}$ $0.02$, leading to bursting MHD activity caused by radial AEs overlapping. MHD bursts cause an enhancement of the EP transport showing ballistic-like features as avalanche-like events. Simulations in the soft MHD limit show an increment of the EP density gradient as the EP $β$ increases. On the other hand, there is a gradient upper limit in the hard MHD limit, consistent with the critical-gradient behavior. AEs induce shear flows and zonal current leading to the deformation of the flux surfaces and the safety factor profile, respectively, particularly strong for the simulation in the hard MHD limit. Simulations in the hard MHD regime show a decrease of the AE frequency in the saturation phase; this is caused by the destabilization of a transitional mode between a $9/3-10/3$ TAE and a $9/3$ RSAE that may explain the AE frequency down-sweeping observed in some DIII-D discharges. Reducing the EP energy in the nonlinear simulations leads to a weakening of the plasma perturbation. On the other hand, increasing the EP energy causes the opposite effect. Nonlinear simulations of off-axis NBI profiles indicate a lower plasma perturbation as the EP density gradient is located further away from the magnetic axis.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Effect of organic electroactive crystallites in a dielectric matrix on the electrical properties of a polymer dielectric

In this work, the effects of inserting chargeable α-quaterthiophene (α4T) crystallites in polystyrene (PS) multilayers used as a transistor gate and capacitor dielectric were investigated. X-ray diffraction (XRD), scanning electron microscopy with energy dispersive x-ray spectroscopy (SEM/EDS), and confocal microscopy indicated the formation of α4T crystallites in the PS matrix. A modified saturation-regime current voltage relationship was used to estimate organic field-effect transistor (OFET) threshold voltage V TH shifting, and in turn the quantities of stored charge that were observed as a result of dielectric charging. The crystallites increased the maximum charge storage capacity as well as the charge retention capability of the dielectrics. Kelvin probe force microscopy (KPFM) showed that charges were localized near the α4T crystallites upon charging. Trilayer experiments validated the charge retention improvement of α4T crystallite-embedded PS dielectrics. The crystallites also improved breakdown characteristics in PS used as a capacitor dielectric, suggesting their application to storage capacitors in addition to OFET logic.

25 ENERGY STORAGE↗
DOE OSTI2021

Global Sensitivity Analysis of Large Distribution System with PVs using Deep Gaussian Process

Global sensitivity analysis (GSA) of the voltage to uncertain power injection variations plays an important role for appropriate Volt-VAR optimization. This paper proposes a data-driven GSA method for large-scale distribution systems with a large number of uncertain sources. Specifically, the deep Gaussian process is used to identify the mapping relationship between uncertain power injections and voltages. This allows us to resort to the analysis of variance framework to calculate the Sobol indices for GSA. Unlike the existing polynomial chaos expansion and Gaussian process-based approaches, our proposed method has much better scalability. Test results on the EPRI 1747-node K1 circuit with a different number and different probability distributions of uncertain sources demonstrate that the proposed method can achieve accurate GSA under various conditions.

14 SOLAR ENERGY↗
DOE OSTI2023

Exploring the Storage Mechanism of Alkali Ions in Non-Graphitic Hard Carbon Anodes

This study aims to develop high-capacity hard carbon anode materials for alkali-ion batteries by controlling the microstructures of non-graphitic hard carbon through an annealing protocol and investigating the effects on the alkali-ion storage mechanisms using physical, chemical, and electrochemical analytical techniques. The hard carbon materials were synthesized at temperatures ranging from 900 °C to 1600 °C. Those synthesized at 1100 °C with high surface area and abundant defects exhibited the highest reversible capacity in Li- and K-ion systems, with the storage dominated by surface-adsorption mechanisms. In contrast, the hard carbon compounds prepared at 1400 °C with numerous curve-featured pores delivered the highest reversible capacity in the Na-ion system, indicating that these pores are the preferred Na-ion storage sites, particularly in low-voltage plateau regions. This study provides a comprehensive understanding of the relationship between microstructures and alkali-ion storage mechanisms in non-graphitic hard carbon and highlights the importance of tailoring the microstructures of hard carbon to achieve high specific capacity for the desired alkali-ion species.

25 ENERGY STORAGE↗
DOE OSTI2022

Power management for wireless nodes

A system includes a rectifier having an input configured to receive a variable AC input voltage and convert the AC input voltage to a rectified output voltage. A power converter has an input coupled to receive the rectified output voltage and to provide a DC supply voltage at an output thereof. A low drop-out regulator has an input coupled to receive the supply voltage and is configured provide a regulated voltage. A sensor is coupled to receive the regulated voltage as a power source and is configured to sense a condition and provide sensor data indicative of the sensed condition.

Feng, Philip X. L.↗
DOE OSTI2021

Modeling active control of resistive wall mode with power saturation and sensor noise on HL-2M

The resistive wall mode (RWM) control on the HL-2M tokamak is simulated with the MARS-F code (Liu et al 2000 Phys. Plasmas 7 3681), aiming at quantifying control current and voltage requirements when more realistic issues are taken into account, i.e. the control power saturation and the sensor signal noise. The fluid model predicts a narrow stability region for the n = 1 RWM without magnetic feedback, in the 2D parameter space of the plasma pressure versus the toroidal flow speed. Magnetic feedback can fully stabilize the RWM on HL-2M. Without considering the voltage limitation and the sensor signal noise, it is found that plasma flow helps active control of the mode, by reducing the required critical feedback gain for both flux-to-current and flux-to-voltage control schemes. In the absence of the sensor signal noise, the lowest control voltage saturation level, below which the RWM control is lost, is found to roughly satisfy a linear relation to the plasma flow frequency, indicating that subsonic plasma flow is effective in relaxing the control power requirement for the RWM feedback stabilization. The presence of the sensor signal noise substantially modifies the feedback results. A statistical study finds that the sensor signal noise, with the standard deviation of 0.1 G on HL-2M, roughly doubles the required control voltage for successful mode control. The synergistic stabilization effect due to plasma flow is somewhat weakened by the presence of the sensor signal noise. At a given rotation, the tolerable voltage limit generally increases with increasing feedback gain due to the sensor signal noise.

Physics↗
DOE OSTI2025

Single Crystalline Na 0.67 Ni 0.33 Mn 0.67 O 2 Positive Electrode Material via Molten Salt Synthesis for Sodium Ion Batteries

P2-layered Na 0.67 Ni 0.33 Mn 0.67 O 2 (NNMO) has emerged as a promising positive electrode material for sodium ion batteries due to its appealing electrochemical properties. Synthesis of polycrystalline NNMO (PC-NNMO) materials through conventional calcination of solid precursors remains the prevailing method, where heating occurs in a dry environment with air or O 2 . On the other hand, the molten salt method, where precursors are submerged in molten salt medium during calcination, emerged in recent years to be a scalable technique for more controlled crystal growth and uniform morphology in a variety of materials. Here, we utilize the molten salt method to synthesize single crystalline NNMO (SC-NNMO) materials with enhanced electrochemical properties. The SC-NNMO material exhibits an initial specific discharge capacity of 95 mAh g –1 at a 0.1C rate, retaining approximately 88.5% of its capacity after 100 cycles over a wide voltage range of 2.0–4.2 V. Furthermore, SC-NNMO maintains a capacity retention of 83.9% after 300 cycles at a 1C rate compared to 66.6% for PC-NNMO, indicating excellent long-term cycling stability. This stability is further confirmed by the performance of an SC-NNMO//hard carbon full cell, which retains 90.3% of its capacity after 200 cycles at 1C within a voltage window of 1.9–4.1 V. The enhancement in stability of the SC-NNMO sample is attributed to the single crystalline structure suppressing the undesired P2–O2 phase transition at high voltage. This study also presents an easy, efficient, and straightforward molten salt process for SC-NNMO material synthesis, offering valuable insights into the potential application of such methodology for the large-scale, cost-effective production of various sodium-layered transition metal oxide positive electrode materials for SIBs.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2021

Evaluation of the rheological and electrical percolation of high‐density polyethylene/carbon black composites using mathematical models

Abstract In this work, conductive polymer composites (CPCs) of bio‐based polyethylene (BioPe) containing different concentrations of carbon black (CB) were developed. By using oscillatory rheology analysis, a Newtonian plateau was observed in BioPe, and all BioPe/CB composites had a behavior of a pseudo‐solid and that composites with volume fractions ranging from 0.24 to 0.56 presented higher viscosity, storage, and loss modulus. This suggests the formation of a percolated network and by using the power‐law models, it was observed that the electrical percolation threshold was higher than the rheological percolation threshold. The electrical conductivity was measured using the four‐point probe method and a sigmoid model was used to predict the CPCs' electrical conductivity percolation threshold. The results indicated that the four‐point probe method presented satisfactory results according to the calculated standard deviations and voltage–current characteristics for each round of measurements considering the same ranging as used in rheology analysis. The analytical model used showed a coefficient of determination ( R 2 ) higher than 95%, allowing the prediction of the electrical conductivity of the CPC and the percolation threshold as a function of the volumetric fraction of the CB.

da SiIva, Moacy P.↗
DOE OSTI2021

Realizing continuous cation order-to-disorder tuning in a class of high-energy spinel-type Li-ion cathodes

Conventional Li-ion cathode materials are dominated by well-ordered structures, in which Li and transition metals occupy distinct crystallographic sites. Here, we show in this paper that profoundly new degrees of freedom for the optimization of electrochemical properties may be accessed if controllable cation disorder is introduced. In a class of high-capacity spinel-type cathode materials, we identify cation to anion ratio in synthesis as a key parameter for tuning the structure continuously from a well-ordered spinel, through a partially ordered spinel, to rocksalt. We find that the varying degree of cation disorder modifies the voltage profile, rate capability, and charge-compensation mechanism in a rational and predictable way. Our results indicate that spinel-type order is most beneficial for achieving high-rate performance as long as the cooperative 8a to 16c phase transition is suppressed, while more rocksalt-like disorder facilitates O redox, which can increase capacity. Our findings reveal an important tuning handle for achieving high energy and power in the vast space of partially ordered cathode materials.

25 ENERGY STORAGE↗
DOE OSTI2020

Imaging hole-density inhomogeneity in arsenic-doped CdTe thin films by scanning capacitance microscopy

We report nanometer-scale hole-density imaging in As-doped CdTe films by scanning capacitance microscopy (SCM). The hole-density profiling is validated by contrasting a CdTe cross-section sample made by molecular-beam epitaxy with systematically increased As doping in a staircase pattern over the range of 10 15 -10 18 /cm 3 within a single film. In polycrystalline films, the carrier distribution is significantly nonuniform, with inhomogeneity ranging from several hundred nm to several um and hole density varying by one order of magnitude (low 10^16 to low 10 17 /cm 3 ). This nonuniformity is distributed randomly, independent of the grain structure and grain boundaries (GBs). Kelvin probe force microscopy (KPFM) maps the surface potential and is correlated to cathodoluminescence (CL) and SCM by imaging over identical areas. Higher potential and lower CL intensity are found on GBs but not by SCM contrast; this indicates positive GB charging and recombination, but not GB-specific hole-density changes. The overall KPFM potential image is in rough agreement with the SCM carrier distribution and indicates band-edge potential fluctuations. Nonuniform carrier concentration, potential fluctuations, and defect recombination can all cause voltage and performance loss in As-doped CdTe solar technology.

14 SOLAR ENERGY↗