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At least 181 records · Page 10

Surface Reactivity of Ag-Modified Ceria to Hydrogen: A Combined Experimental and Theoretical Investigation

We investigate the mechanism of H 2 activation on Ag-modified cerium oxide surfaces, of interest for different catalytic applications. The study is performed on thin epitaxial cerium oxide films, investigated by X-ray photoemission spectroscopy to assess the changes of both the Ag oxidation state and the concentration of Ce 3+ ions, O vacancies, and hydroxyl groups on the surface during thermal reduction cycles in vacuum and under hydrogen exposure. The results are interpreted using density functional theory calculations to model pristine and Ag-modified ceria surfaces. Although the reactivity of ceria toward H 2 oxidation improves when a fraction of Ce cations is substituted with Ag, the concentration of reduced Ce 3+ ions in Ag-modified ceria is found to be lower than in pure ceria under the same conditions. This behavior is observed even though the number of surface oxygen vacancies caused by the thermal treatment under hydrogen exposure is larger for the Ag-modified surface. These results are explained in terms of a change of the oxidation state of the surface Ag, which is able to acquire some of the extra surface electrons created by the oxygen vacancies and the adsorbed hydrogen atoms. Our findings provide new insights into the reactivity of Ag-modified ceria, which has been proposed as a promising alternative to platinum electrodes in electrochemical devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Morphological–Electrical Property Relation in Cu(In,Ga)(S,Se) 2 Solar Cells: Significance of Crystal Grain Growth and Band Grading by Potassium Treatment

Abstract Solution‐processed Cu(In,Ga)(S,Se) 2 (CIGS) has a great potential for the production of large‐area photovoltaic devices at low cost. However, CIGS solar cells processed from solution exhibit relatively lower performance compared to vacuum‐processed devices because of a lack of proper composition distribution, which is mainly instigated by the limited Se uptake during chalcogenization. In this work, a unique potassium treatment method is utilized to improve the selenium uptake judiciously, enhancing grain sizes and forming a wider bandgap minimum region. Careful engineering of the bandgap grading structure also results in an enlarged space charge region, which is favorable for electron–hole separation and efficient charge carrier collection. Besides, this device processing approach has led to a linearly increasing electron diffusion length and carrier lifetime with increasing the grain size of the CIGS film, which is a critical achievement for enhancing photocurrent yield. Overall, 15% of power conversion efficiency is achieved in solar cells processed from environmentally benign solutions. This approach offers critical insights for precise device design and processing rules for solution‐processed CIGS solar cells.

Kim, Joo‐Hyun↗

Testing of a spacecraft model in a combined environment simulator

A scale model of a satellite was tested in a large vacuum facility under electron bombardment and vacuum ultraviolet radiation to investigate the charging of dielectric materials on curved surfaces. The model was tested both stationary and rotating relative to the electron sources as well as grounded through one megohm and floating relative to the chamber. Surface potential measurements are presented and compared with the predictions of computer modelling of the stationary tests. Discharge activity observed during the stationary tests is discussed and signals from sensing devices located inside and outside of the model are presented.

Staskus, J. V.↗

Testing of a spacecraft model in a combined environment simulator

A scale model of a satellite was tested in a large vacuum facility under electron bombardment and vacuum ultraviolet radiation to investigate the charging of dielectric materials on curved surfaces. The model was tested both stationary and rotating relative to the electron sources as well as grounded through one megohm and floating relative to the chamber. Surface potential measurements are presented and compared with the predictions of computer modelling of the stationary tests. Discharge activity observed during the stationary tests is discussed and signals from sensing devices located inside and outside of the model are presented.

Staskus, J. V.↗

Atomistic Probing of Defect-Engineered 2H-MoTe 2 Monolayers

Point defects dictate various physical, chemical, and optoelectronic properties of two-dimensional (2D) materials, and therefore, a rudimentary understanding of the formation and spatial distribution of point defects is a key to advancement in 2D material-based nanotechnology. In this work, we performed the demonstration to directly probe the point defects in 2H-MoTe 2 monolayers that are tactically exposed to (i) 200 °C-vacuum-annealing and (ii) 532 nm-laser-illumination; and accordingly, we utilize a deep learning algorithm to classify and quantify the generated point defects. We discovered that tellurium-related defects are mainly generated in both 2H-MoTe 2 samples; but interestingly, 200 °C-vacuum-annealing and 532 nm-laser-illumination modulate a strong n-type and strong p-type 2H-MoTe 2 , respectively. While 200 °C-vacuum-annealing generates tellurium vacancies or tellurium adatoms, 532 nm-laser-illumination prompts oxygen atoms to be adsorbed/chemisorbed at tellurium vacancies, giving rise to the p-type characteristic. This work significantly advances the current understanding of point defect engineering in 2H-MoTe 2 monolayers and other 2D materials, which is critical for developing nanoscale devices with desired functionality.

2H-MoTe 2↗

Helicon Plasma Injector and Ion Cyclotron Acceleration Development in the VASIMR Experiment

In the Variable Specific Impulse Magnetoplasma Rocket (VASIMR) radio frequency (rf) waves both produce the plasma and then accelerate the ions. The plasma production is done by action of helicon waves. These waves are circular polarized waves in the direction of the electron gyromotion. The ion acceleration is performed by ion cyclotron resonant frequency (ICRF) acceleration. The Advanced Space Propulsion Laboratory (ASPL) is actively developing efficient helicon plasma production and ICRF acceleration. The VASIMR experimental device at the ASPL is called VX-10. It is configured to demonstrate the plasma production and acceleration at the 10kW level to support a space flight demonstration design. The VX-10 consists of three electromagnets integrated into a vacuum chamber that produce magnetic fields up to 0.5 Tesla. Magnetic field shaping is achieved by independent magnet current control and placement of the magnets. We have generated both helium and hydrogen high density (>10(exp 18) cu m) discharges with the helicon source. ICRF experiments are underway. This paper describes the VX-10 device, presents recent results and discusses future plans.

Squire, Jared P.↗

Ultrathin stable Ohmic contacts for high-temperature operation of β -Ga2O3 devices

Beta gallium oxide (β-Ga2O3) shows significant promise in high-temperature, high-power, and sensing electronics applications. However, long-term stable metallization layers for Ohmic contacts at high temperatures present unique thermodynamic challenges. The current most common Ohmic contact design based on 20 nm of Ti has been repeatedly demonstrated to fail at even moderately elevated temperatures (300–400 °C) due to a combination of nonstoichiometric Ti/Ga2O3 interfacial reactions and kinetically favored Ti diffusion processes. Here, we demonstrate stable Ohmic contacts for Ga2O3 devices operating up to 500–600 °C using ultrathin Ti layers with a self-limiting interfacial reaction. The ultrathin Ti layer in the 5 nm Ti/100 nm Au contact stack is designed to fully oxidize while forming an Ohmic contact, thereby limiting both thermodynamic and kinetic instability. This novel contact design strategy results in an epitaxial conductive anatase titanium oxide interface layer that enables low-resistance Ohmic contacts that are stable both under long-term continuous operation (>500 h) at 600 °C in vacuum (≤10−4 Torr), as well as after repeated thermal cycling (15 times) between room temperature and 550 °C in flowing N2. This stable Ohmic contact design will accelerate the development of high-temperature devices by enabling research focus to shift toward rectifying interfaces and other interfacial layers.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

A strategy to eliminate selenium oxide islands formed on the ZnSe/GaAs epilayer

Atomically clean and smooth surfaces are essential for semiconductor device fabrication and epitaxial regrowth. In this regard, spontaneously formed oxide islands or clusters on the surfaces of II-VI semiconductor exposures to air can disrupt interface formation. Using ZnSe/GaAs heterostructures grown by molecular beam epitaxy (MBE), we investigated the effect of surface treatments in eliminating oxide islands. The samples were probed with atomic force microscopy, low-temperature photoluminescence, and scanning electron microscopy. Here, it was found that ultra-high vacuum (UHV) annealing at 200°C, regardless of annealing duration, largely removed the islands while leaving the crystallinity of the ZnSe and GaAs epilayers unaffected. UHV annealing at higher temperatures of 300°C completely removed the islands, but the optical properties of ZnSe and/or GaAs epilayers deteriorated depending on the annealing duration. Our observations provide guidance to set thermal annealing strategies for removing oxide islands from the surfaces of II-VI/III-V semiconductor heterostructures depending on the desired properties.

36 MATERIALS SCIENCE↗

Refurbishment and Automation of Thermal Vacuum Facilities at NASA/GSFC

The thermal vacuum facilities located at the Goddard Space Flight Center (GSFC) have supported both manned and unmanned space flight since the 1960s. Of the eleven facilities, currently ten of the systems are scheduled for refurbishment or replacement as part of a five-year implementation. Expected return on investment includes the reduction in test schedules, improvements in safety of facility operations, and reduction in the personnel support required for a test. Additionally, GSFC will become a global resource renowned for expertise in thermal engineering, mechanical engineering, and for the automation of thermal vacuum facilities and tests. Automation of the thermal vacuum facilities includes the utilization of Programmable Logic Controllers (PLCs), the use of Supervisory Control and Data Acquisition (SCADA) systems, and the development of a centralized Test Data Management System. These components allow the computer control and automation of mechanical components such as valves and pumps. The project of refurbishment and automation began in 1996 and has resulted in complete computer control of one facility (Facility 281), and the integration of electronically controlled devices and PLCs in multiple others.

Dunn, Jamie↗

Refurbishment and Automation of Thermal Vacuum Facilities at NASA/GSFC

The thermal vacuum facilities located at the Goddard Space Flight Center (GSFC) have supported both manned and unmanned space flight since the 1960s. Of the eleven facilities, currently ten of the systems are scheduled for refurbishment or replacement as part of a five-year implementation. Expected return on investment includes the reduction in test schedules, improvements in safety of facility operations, and reduction in the personnel support required for a test. Additionally, GSFC will become a global resource renowned for expertise in thermal engineering, mechanical engineering, and for the automation of thermal vacuum facilities and tests. Automation of the thermal vacuum facilities includes the utilization of Programmable Logic Controllers (PLCs), the use of Supervisory Control and Data Acquisition (SCADA) systems, and the development of a centralized Test Data Management System. These components allow the computer control and automation of mechanical components such as valves and pumps. The project of refurbishment and automation began in 1996 and has resulted in complete computer control of one facility (Facility 281), and the integration of electronically controlled devices and PLCs in multiple others.

Dunn, Jamie↗

Design and Preliminary Testing of a High Performance Antiproton Trap (HiPAT)

Antimatter represents the pinnacle of energy density, offering the potential to enhance current fusion/fission concepts enabling various classes of deep space missions. Current production rates are sufficient to support proof-of-concept evaluation of many key technologies associated with antimatter-derived propulsion. Storage has been identified as a key enabling technology for all antimatter-related operations, and as such is the current focus of this NASA-MSFC effort to design and fabricate a portable device capable of holding up to 10(exp 12) particles. Hardware has been assembled and initial tests are underway to evaluate the trap behavior using electron gun generated, positive hydrogen ions. Ions have been stored for tens of minutes, limited by observed interaction with background gas. Additionally, radio frequency manipulation is being tested to increase lifetime by stabilizing the stored particles, potentially reducing their interaction with background gas, easing requirements on ultimate trap vacuum and precision mechanical alignment.

Martin, James↗

Advanced Functional Materials ZnO@ZIF-8 Heterostructures for Neuromorphic Synaptic Devices

Metal-Organic Frameworks have shown great promise for memristive synaptic devices because of their adaptable electrical properties and inherent porosity, which help in efficient ion transport and storage of functional molecules. However, the limited conductivity and sensitivity to moisture associated with most MOF materials hinder their use in electronic applications. In this study, MOFs derived from metabolites have been synthesized, using ZnO as a self-sacrificial metallic source to grow Zeolitic Imidazolate Framework-8 (ZIF-8), forming ZnO@ZIF-8 heteronanostructures for neuromorphic applications. These hybrids ZnO@ZIF-8 act as promising candidates for advanced electronic applications. Through systematic investigations, including a comparison of ZnO@ZIF-8 bilayer devices with ZnO single-layer counterparts, a significant discovery emerged. The bilayer synaptic devices outperformed their single layer counterparts in electrical characteristics, as evidenced by Current-Voltage curve analysis and Long-Term Potentiation/Long Term Depression (LTP/LTD) measurements. Additionally, the ZnO layer thickness (10, 30, 50 nm) has been emphasized and the effects of annealing at 300°C in a vacuum were carefully studied for Neuromorphic Synaptic Devices. Remarkably, the 10 nm ZnO layer exhibited the lowest set voltage and a consistent On/Off ratio. This work marks a significant advancement in understanding bilayer synaptic devices, highlighting the crucial role of ZIF-8 in shaping the future of neuromorphic systems

Kolleboyina, Jayaramulu↗

Implementation of extreme ultraviolet spectroscopy on a sheared-flow-stabilized Z pinch

A diagnostic for extreme ultraviolet spectroscopy was fielded on the sheared-flow-stabilized (SFS) fusion Z-pinch experiment (FuZE-Q) for the first time. The spectrometer collected time-gated plasma emission spectra in the 5–40 nm wavelength (30–250 eV) range for impurity identification, radiative power studies, and for plasma temperature and density measurements. The unique implementation of the diagnostic included fast (10 ns risetime) pulsed high voltage electronics and a multi-stage differential pumping system that allowed the vacuum-coupled spectrometer to collect three independently timed spectra per FuZE-Q shot while also protecting sensitive internal components. Analysis of line emission identifies oxygen (N-, C-, B-, Be-, Li-, and He-like O), peaking in intensity shortly after maximum current (>500 kA). This work provides a foundation for future high energy spectroscopy experiments on SFS Z-pinch devices.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

NASA Tech Briefs, April 2012

Topics include: Computational Ghost Imaging for Remote Sensing; Digital Architecture for a Trace Gas Sensor Platform; Dispersed Fringe Sensing Analysis - DFSA; Indium Tin Oxide Resistor-Based Nitric Oxide Microsensors; Gas Composition Sensing Using Carbon Nanotube Arrays; Sensor for Boundary Shear Stress in Fluid Flow; Model-Based Method for Sensor Validation; Qualification of Engineering Camera for Long-Duration Deep Space Missions; Remotely Powered Reconfigurable Receiver for Extreme Environment Sensing Platforms; Bump Bonding Using Metal-Coated Carbon Nanotubes; In Situ Mosaic Brightness Correction; Simplex GPS and InSAR Inversion Software; Virtual Machine Language 2.1; Multi-Scale Three-Dimensional Variational Data Assimilation System for Coastal Ocean Prediction; Pandora Operation and Analysis Software; Fabrication of a Cryogenic Bias Filter for Ultrasensitive Focal Plane; Processing of Nanosensors Using a Sacrificial Template Approach; High-Temperature Shape Memory Polymers; Modular Flooring System; Non-Toxic, Low-Freezing, Drop-In Replacement Heat Transfer Fluids; Materials That Enhance Efficiency and Radiation Resistance of Solar Cells; Low-Cost, Rugged High-Vacuum System; Static Gas-Charging Plug; Floating Oil-Spill Containment Device; Stemless Ball Valve; Improving Balance Function Using Low Levels of Electrical Stimulation of the Balance Organs; Oxygen-Methane Thruster; Lunar Navigation Determination System - LaNDS; Launch Method for Kites in Low-Wind or No-Wind Conditions; Supercritical CO2 Cleaning System for Planetary Protection and Contamination Control Applications; Design and Performance of a Wideband Radio Telescope; Finite Element Models for Electron Beam Freeform Fabrication Process Autonomous Information Unit for Fine-Grain Data Access Control and Information Protection in a Net-Centric System; Vehicle Detection for RCTA/ANS (Autonomous Navigation System); Image Mapping and Visual Attention on the Sensory Ego-Sphere; HyDE Framework for Stochastic and Hybrid Model-Based Diagnosis; and IMAGESEER - IMAGEs for Education and Research.

Source record↗

Ohmic contacts to nitrogen-incorporated n-type ultrananocrystalline diamond film grown on intrinsic single crystal diamond substrate

Nitrogen-incorporated ultrananocrystalline diamond (n-UNCD) films offer tremendous potential for diverse electronic applications. However, the absence of a reliable Ohmic contact at room temperature limits their practical integration and broader applicability. Here, in this study, we investigate the room temperature specific contact resistivity (ρ c ) of Ti/Pt/Au metal stack deposited on n-UNCD films grown on an intrinsic single crystal diamond substrate using a microwave plasma chemical vapor deposition system. We employ a circular transfer length model (c-TLM) and find the room temperature ρ c to be ∼4.67 × 10 −5 Ω cm 2 , which is among the lowest reported value for n-UNCD films. High temperature vacuum annealing conducted at 700 and 800 °C results in an initial improvement, followed by a minor degradation in ρ c values, respectively. The electrical contacts remain highly Ohmic for all measurements. Furthermore, cross-sectional transmission electron microscopy analysis suggests formation of conductive titanium carbide layer with no significant inter metallic diffusion. Overall, the electrical contacts demonstrate robust thermal stability, both of which are critical for attaining high-performance nanocrystalline diamond-based electronic devices.

Low resistance contacts↗

Influence of Disorder on the Electronic Properties and Magnetotransport of Ti 3 C 2 T x Single-Flake Devices

The exploration of MXenes for electronic applications is a rapidly growing field in materials science. However, most research has focused on MXene films, with only a limited number of studies addressing the characterization of single-flake devices. In this work, we investigate the electronic and magnetotransport properties of Ti 3 C 2 T x single-flake devices, exploring the influence of structural defectivity on their transport mechanisms. We show that negative magnetoresistance present at low temperatures in single flake samples arises from weak localization, which we analyze to extract the phase coherence length of single-layer and multi-layer flakes. The study of magnetoresistance for this metallic MXene shows that the material exhibits quantum transport phenomena when intrinsic electronic behavior dominates. Moreover, by increasing the defect density via thermal annealing in ultrahigh vacuum, we uncover and characterize the metal-to-disordered metal transition in Ti 3 C 2 T x , shedding light on new properties and enriching fundamental knowledge about MXenes.

MXenes↗

Photographic Equipment Test System (PETS)

The Photographic Equipment Test System is presented. The device is a mobile optical system designed for evaluating performance of various sensors in a laboratory, in a vacuum chamber or on a flight line. The carriage is designed to allow elevation as well as azimuth control of the direction of the light from the collimator. The pneumatic tires provide an effective vibration isolation system. A target/illumination system is mounted on a motor driven linear slide, and focusing and exposure control can be operated remotely from the small electronics control console.

Source record↗

Installation and Characterization of Charged Particle Sources for Space Environmental Effects Testing

Charged particle sources are integral devices used by Marshall Space Flight Center s Environmental Effects Branch (EM50) in order to simulate space environments for accurate testing of materials and systems. By using these sources inside custom vacuum systems, materials can be tested to determine charging and discharging properties as well as resistance to sputter damage. This knowledge can enable scientists and engineers to choose proper materials that will not fail in harsh space environments. This paper combines the steps utilized to build a low energy electron gun (The "Skevington 3000") as well as the methods used to characterize the output of both the Skevington 3000 and a manufactured Xenon ion source. Such characterizations include beam flux, beam uniformity, and beam energy. Both sources were deemed suitable for simulating environments in future testing.

Skevington, Jennifer L.↗