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Fatigue data for refractory molybdenum-base alloys subjected to elevated temperatures in ultrahigh vacuum environment
Ultrahigh vacuum technology including cryopump, getter ion pump, diffusion pump, and pressure standardization studies
Supressor, pressure, and ionization gauges, getter ion pumps, bakeout procedures, and adsorption in high and ultrahigh vacuum systems
Creep resistance of refractory alloys at elevated temperatures under ultrahigh vacuum conditions
Ultrahigh vacuum system with accurate tensile test capability for material and lubricant tests
Vortex stabilized arc, pressure arc facility, spectral irradiance measurements of light sources, and ultrahigh vacuum system in support of solar simulation testing
Residual gases in oil-diffusion-pump ultrahigh vacuum determined as function of various trapping conditions
Mass spectrometry capabilities of cold cathode magnetron ion source for use in ultrahigh vacuum residual gas analysis
Description of experimental requirements for adapting ultrahigh vacuum equipment to study of effects of simulated space environment on microorganisms
Ultrahigh vacuum creep data for tungsten, tungsten-25 per cent rhenium, TZM and TZC MOLYBDENUM alloys and AS-30 niobium alloy
Multiple-cell ion pumps with increased vacuum pumping speed are used for producing ultrahigh vacuums in vacuum tubes and mass spectrometers. The pump has eight cathode-anode magnetron cells arranged in a cylinder which increase the surface area of the cathode.
Here, the reactivity of liquid hydrazine (N 2 H 4 ) with respect to H-, Cl-, and Br-terminated Si(100) surfaces was investigated to uncover the principles of nitrogen incorporation into the interface. This process has important implications in a wide variety of applications, including semiconductor surface passivation and functionalization, nitride growth, and many others. The use of hydrazine as a precursor allows for reactions that exclude carbon and oxygen, the primary sources of contamination in processing. In this work, the reactivity of N 2 H 4 with H- and Cl-terminated surfaces prepared by traditional solvent-based methods and with a Br-terminated Si(100) prepared in ultrahigh vacuum was compared. The reactions were studied with X-ray photoelectron spectroscopy, atomic force microscopy, and scanning tunneling microscopy, and the observations were supported by computational investigations. The H-terminated surface led to the highest level of nitrogen incorporation; however, the process proceeds with increasing surface roughness, suggesting possible etching or replacement reactions. In the case of Cl-terminated (predominantly dichloride) and Br-terminated (monobromide) surfaces, the amount of nitrogen incorporation on both surfaces after the reaction with hydrazine was very similar despite the differences in preparation, initial structure, and chemical composition. Density functional theory was used to propose the possible surface structures and to analyze surface reactivity.
Performance of gallium lubricated slipring assembly in ultrahigh vacuum for 500 hours
Alkali antimonide semiconductor photocathodes are promising candidates for high-brightness electron sources for advanced accelerators, including free-electron lasers (FEL), due to their high quantum efficiency (QE), low emittance, and high temporal resolution. Two challenges with these photocathodes are (1) the lack of a universal deposition recipe to achieve crystal stoichiometries and (2) their high susceptibility to vacuum contamination, which restricts their operation pressure to ultrahigh vacuums and leads to a short lifetime and low extraction charge. To resolve these issues, it is essential to understand the elemental compositions of deposited photocathodes and correlate them to robustness. Here, we report depth profiles for potassium cesium antimonide photocathodes, which were investigated using synchrotron radiation x-ray photoelectron spectroscopy, and the robustness of those photocathodes. We prepared two types of photocathodes with different potassium contents via sequential thermal evaporation. Depth profiles revealed that the photocathodes with a potassium deficit had excess cesium at the surface, while the ratio of potassium and cesium to antimony decreased rapidly within the film. In contrast, the photocathodes with sufficient potassium had close to the theoretical stoichiometry of K 2 CsSb at the surface and maintained that stoichiometry for over half the entire film thickness. Both photocathode types had a similar maximum QE at 532 nm; however, exposure to oxygen revealed that the photocathode with a crystalline stoichiometry of K 2 CsSb maintained QE at one order of magnitude higher pressure compared to its potassium-deficit counterpart. These results highlight the importance of synthesizing potassium cesium antimonide photocathodes with sufficient potassium to achieve the theoretical crystalline stoichiometry for both high QE and improved robustness.
Work done during the final report period is presented. The main technical objective was to achieve epitaxial growth on silicon of two semiconducting silicides, ReSi2 and CrSi2. ReSi2 thin films were grown on (001) silicon wafers by vacuum evaporation of rhenium onto hot substrates in ultrahigh vacuum. The preferred epitaxial relationship was found to be ReSi2(100)/Si(001) with ReSi2(010) parallel to Si(110). The lattice matching consists of a common unit mesh of 120 A(sup 2) area, and a mismatch of 1.8 percent. Transmission electron microscopy revealed the existence of rotation twins corresponding to two distinct but equivalent azimuthal orientations of the common unit mesh. MeV He(+) backscattering spectrometry revealed a minimum channeling yield of 2 percent for an approximately 1,500 A thick film grown at 650 C. Although the lateral dimension of the twins is on the order of 100 A, there is a very high degree of alignment between the ReSi2(100) and the Si(001) planes. Highly oriented films of CrSi2 were grown on (111) silicon substrates, with the matching crystallographic faces being CrSi2(001)/Si(111). The reflection high-energy electron diffraction (RHEED) patterns of the films consist of sharp streaks, symmetrically arranged. The predominant azimuthal orientation of the films was determined to be CrSi2(210) parallel to Si(110). This highly desirable heteroepitaxial relationship has been obtained previously by others; it may be described with a common unit mesh of 51 A(sup 2) and mismatch of 0.3 percent. RHEED also revealed the presence of limited film regions of a competing azimuthal orientation, CrSi2(110) parallel to Si(110). A channeling effect for MeV He(+) ions was not found for this material. Potential commercial applications of this research may be found in silicon-integrated infrared detector arrays. Optical characterizations showed that semiconducting ReSi2 is a strong absorber of infrared radiation, with the adsorption constant increasing above 2 x 10(exp 4) cm(sup -1) for photon energies above 0.2 eV. CrSi2 is of potential utility for detection at photon energies above approximately 0.3 eV.
Barium thin film reflection coefficient for ultraviolet radiation in ultrahigh vacuum
A wake shield facility providing an ultrahigh vacuum level for space processing is described. The facility is in the shape of a truncated, hollow hemispherical section, one side of the shield convex and the other concave. The shield surface is preferably made of material that has low out-gassing characteristics such as stainless steel. A material sample supporting fixture in the form of a carousel is disposed on the convex side of the shield at its apex. Movable arms, also on the convex side, are connected by the shield in proximity to the carousel, the arms supporting processing fixtures, and providing for movement of the fixtures to predetermined locations required for producing interations with material samples. For MBE processes a vapor jet projects a stream of vaporized material onto a sample surface. The fixtures are oriented to face the surface of the sample being processed when in their extended position, and when not in use they are retractable to a storage position. The concave side of the shield has a support structure including metal struts connected to the shield, extending radially inward. The struts are joined to an end plate disposed parallel to the outer edge of the shield. This system eliminates outgassing contamination.