Simulator Development for Nanoelectronic Devices
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simulation nanoelectronics resonant tunneling diod↗
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Comparison of numerical quantum device models
The Wigner equation and non-equilibrium Green's functions are two formalisms widely used in quantum device simulation.
tunneling diode quantum transport Wigner↗
"Genetically Engineered" Nanoelectronics
The Nanoelectronic Modeling Tool (NEMO) is a general-purpose quantum device design and analysis tool based on a fundamental non-equilibrium electron transport theory.
genetics↗
Effects of tunneling on an IMPATT oscillator.
A phenomenological formulation that incorporates both the tunneling and avalanche mechanisms in an IMPATT diode is presented. The I-V characteristic of a diode where the two mechanisms are present is calculated. The agreement between the predicted I-V characteristics of diodes with both tunneling and avalanche processes and the measured ones indicates the soundness of the formulation presented.
Kwok, S. P.↗
Fabricating Graphene Oxide/h-BN Metal Insulator Semiconductor Diodes by Nanosecond Laser Irradiation
To employ graphene’s rapid conduction in 2D devices, a heterostructure with a broad bandgap dielectric that is free of traps is required. Within this paradigm, h-BN is a good candidate because of its graphene-like structure and ultrawide bandgap. We show how to make such a heterostructure by irradiating alternating layers of a-C and a-BN film with a nanosecond excimer laser, melting and zone-refining constituent layers in the process. With Raman spectroscopy and ToF-SIMS analyses, we demonstrate this localized zone-refining into phase-pure h-BN and rGO films with distinct Raman vibrational modes and SIMS profile flattening after laser irradiation. Furthermore, in comparing laser-irradiated rGO-Si MS and rGO/h-BN/Si MIS diodes, the MIS diodes exhibit an increased turn-on voltage (4.4 V) and low leakage current. The MIS diode I-V characteristics reveal direct tunneling conduction under low bias and Fowler-Nordheim tunneling in the high-voltage regime, turning the MIS diode ON with improved rectification and current flow. This study sheds light on the nonequilibrium approaches to engineering h-BN and graphene heterostructures for ultrathin field effect transistor device development.
2D materials↗
InGaAs/InP heteroepitaxial Schottky barrier diodes for terahertz applications
This paper explores the feasibility of planar, sub-harmonically pumped, anti-parallel InGaAs/InP heteroepitaxial Schottky diodes for terahertz applications. We present calculations of the (I-V) characteristics of such diodes using a numerical model that considers tunneling. We also present noise and conversion loss predictions of diode mixers operated at 500 GHz, and obtained from a multi-port mixer analysis, using the I-V characteristics predicted by our model. Our calculations indicate that InGaAs/InP heteroepitaxial Schottky barrier diodes are expected to have an I-V characteristic with an ideality factor comparable to that of GaAs Schottky diodes. However, the reverse saturation current of InGaAs/InP diodes is expected to be much greater than that of GaAs diodes. These predictions are confirmed by experiment. The mixer analyses predict that sub-harmonically pumped anti-parallel InGaAs/InP diode mixers are expected to offer a 2 dB greater conversion loss and a somewhat higher single sideband noise temperature than their GaAs counterparts. More importantly, the InGaAs/InP devices are predicted to require only one-tenth of the local oscillator power required by similar GaAs diodes.
Bhapkar, Udayan V.↗
Fully Transparent GaN Homojunction Tunnel Junction-Enabled Cascaded Blue LEDs.
A sidewall activation process was optimized for buried magnesium-doped p-GaN layers yielding a significant reduction in tunnel junction-enabled light emitting diode (LED) forward voltage. This buried activation enabled the realization of cascaded blue LEDs with fully transparent GaN homojunction tunnel junctions. The initial optimization of buried p-GaN activation was performed on PN junctions grown by metal organic chemical vapor deposition (MOCVD) buried under hybrid tunnel junctions grown by MOCVD and molecular beam epitaxy. Next the activation process was implemented in cascaded blue LEDs emitting at 450 nm, which were enabled by fully transparent GaN homojunction tunnel junctions. The tunnel junction-enabled multi-active region blue LEDs were grown monolithically by MOCVD. This work demonstrates a state-of-the-art tunnel junction-enabled cascaded LED utilizing homojunction tunnel junctions which do not contain any heterojunction interface.
42 ENGINEERING↗
Schlieren with a laser diode source
The use of a laser diode as a light source for a schlieren system designed to study phase objects such as a wind-tunnel flow is explored. A laser diode schlieren photograph and a white light schlieren photograph (zirconium arc source) are presented for comparison. The laser diode has increased sensitivity, compared with light schlieren, without appreciable image degradiation, and is an acceptable source for schlieren flow visualization.
Burner, A. W.↗
Transit-time devices as local oscillators for frequencies above 100 GHz
Very promising preliminary experimental results have been obtained from GaAs IMPATT diodes at F-band frequencies (75 mW, 3.5 percent at 111.1 GHz and 20 mW, 1.4 percent at 120.6 GHz) and from GaAs TUNNETT diodes at W-band frequencies (26 mW, 1.6 percent at 87.2 GHz and 32 mW, 2.6 percent at 93.5 GHz). These results indicate that IMPATT, MITATT and TUNNETT diodes have the highest potential of delivering significant amounts of power at Terahertz frequencies. As shown recently, the noise performance of GaAs W-band IMPATT diodes can compete with that of Gunn devices. Since TUNNETT diodes take advantage of the quieter tunnel injection, they are expected to be especially suited for low-noise local oscillators. This paper will focus on the two different design principles for IMPATT and TUNNETT diodes, the material parameters involved in the design and some aspects of the present device technology. Single-drift flat-profile GaAs D-band IMPATT diodes had oscillations up to 129 GHz with 9 mW, 0.9 percent at 128.4 GHz. Single-drift GaAs TUNNETT diodes had oscillations up to 112.5 GHz with 16 mW and output power levels up to 33 mW and efficiencies up to 3.4 percent around 102 GHz. These results are the best reported so far from GaAs IMPATT and TUNNETT diodes.
Eisele, H.↗
Persistent Josephson tunneling between Bi 2 Sr 2 CaCu 2 O 8 + x flakes twisted by 45 ° across the superconducting dome
There is a heated debate on the Josephson effect in twisted Bi 2 Sr 2 CaCu 2 O 8+x flakes. Recent experimental results suggest the presence of either anomalously isotropic pairing or exotic d+id-wave pairing, in addition to the commonly believed d-wave one. Here, we address this controversy by fabricating ultraclean junctions with uncompromised crystalline quality and stoichiometry at the junction interfaces. In the optimally doped regime, we obtain prominent Josephson coupling (2-4 mV) in multiple junctions with the twist angle of 45°, in sharp contrast to a recent report that shows two orders of magnitude suppression around 45° from the value at 0°. We further extend this study to the previously unexplored overdoped regime and observe pronounced Josephson tunneling at 45° together with Josephson diode effect up to 50 K. In conclusion, our work helps establish the persistent presence of an isotropic pairing component across the entire superconducting phase diagram.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Improved forward voltage and external quantum efficiency scaling in multi-active region III-nitride LEDs
Ultra-low voltage drop tunnel junctions (TJs) were utilized to enable multi-active region blue light emitting diodes (LEDs) with up to three active regions in a single device. The multi-active region blue LEDs were grown monolithically by metal-organic chemical vapor deposition (MOCVD) without growth interruption. This is the first demonstration of a MOCVD grown triple-junction LED. Optimized TJ design enabled near-ideal voltage and EQE scaling close to the number of junctions. Furthermore, this work demonstrates that with proper TJ design, improvements in wall-plug efficiency at high output power operation are possible by cascading multiple III-nitride based LEDs.
42 ENGINEERING↗
Miniature backward-diode pressure sensor features stability and low power consumption
Backward-diode pressure transducer retains the advantages of a tunneling mechanism, requires no shunting resistor, operates at a low voltage level, and consumes little power.
Garfein, A.↗
Optical electronics
The development of an optical diode consisting of a metal-dielectric-metal junction in which the high-speed electric conduction process occurs due to quantum mechanical electron tunneling across the dielectric barrier is briefly reviewed. Potential applications of the diode are discussed.
Javan, A.↗
Ohmic contacts for laser diodes
Requirements for ohmic contacts to laser diodes are discussed, and properties of Schottky barrier tunneling contacts are reviewed. A procedure is described for measuring contact resistance on fabricated laser material without the need for specially constructed samples and contact configurations. Measurements of contact resistance and estimates of specific contact resistance are given for Ti/Pt/Au contacts to surfaces with three different doping levels. It was found that below a p-type carrier concentration of 1 x 10 to the 19th per cu cm the contact resistance is likely to be too high for good device performance. At higher doping levels, a specific contact resistance as low as 2 x 10 to the -6th ohm sq cm was obtained. Oxide stripe lasers provided with the type of contact discussed in this paper have been operated without failures for periods up to 7 years at a current density at the contact of 6-8 kA/sq cm. It appears therefore that these contacts satisfy the need for low resistance and durability and that, at the same time, they do not cause any obvious material degradation.
Ladany, I.↗
Resonant tunneling through mixed quasibound states in a triple-well structure
A triple-well resonant-tunneling structure made from the In(0.53)Ga(0.47)As/AlAs material system yields a broad negative differential resistance (NDR) region without the precipitous drop in current that occurs in single-well structures. This NDR characteristic is attributed to resonant tunneling through mixed quasi-bound states. A diode made from this structure is used to generate a nearly constant power of 0.5 mW up to 16 GHz.
Brown, E. R.↗
A model for the trap-assisted tunneling mechanism in diffused n-p and implanted n(+)-p HgCdTe photodiodes
This paper presents a theoretical model for the trap-assisted tunneling process in diffused n-on-p and implanted n(+)-on-p HgCdTe photodiodes. The model describes the connection between the leakage current associated with the traps and the trap characteristics: concentration, energy level, and capture cross sections. It is observed that the above two types of diodes differ the voltage dependence of the trap-assisted tunneling current and dynamic resistance. The model takes this difference into account and offers an explanation of the phenomenon. The good fit between measured and calculated dc characteristics of the photodiodes supports the validity of the model.
Rosenfeld, David↗
A model for the trap-assisted tunneling mechanism in diffused n-p and implanted n(+)-p HgCdTe photodiodes
A theoretical model for the trap-assisted tunneling process in diffused n-on-p and implanted n(+)-on-p HgCdTe photodiodes is presented. The model describes the traps and the trap characteristics: concentration, energy level, and capture cross sections. We have observed that the above two types of diodes differ in the voltage dependence of the trap-assisted tunneling current and dynamic resistance. Our model takes this difference into account and offers an explanation of the phenomenon. The good fit between measured and calculated DC characteristics of the photodiodes (for medium and high reverse bias and for temperatures from 65 to 140 K) supports the validity of the model.
Rosenfeld, David↗
III-Nitride p-down green (520 nm) light emitting diodes with near-ideal voltage drop
We demonstrate p-down green emitting LEDs with low turn-on voltage enabled by efficient tunnel junctions. Due to the polarization field alignment in the (In,Ga)N/GaN interface with the p-down orientation, the electrostatic depletion barrier for electron and hole injection is reduced when compared with the conventional p-up LEDs. A single (In,Ga)N/GaN heterostructure quantum well active region with a GaN homojunction tunnel junction exhibited very low forward operating voltage of 2.42 V at 20 A/cm 2 with a peak electroluminescence emission wavelength of 520 nm for current densities above 100 A/cm 2 . Furthermore, the bottom tunnel junction with minimal voltage drop enabled excellent hole injection into the bottom p-GaN layer.
36 MATERIALS SCIENCE↗