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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10

Imaging of a van der Waals spin-orbit torque system using spin ensembles in hBN

Recently, optically active spin defects embedded in two-dimensional (2D) van der Waals (vdW) crystals have emerged as a transformative quantum sensing platform to explore cutting-edge materials science. Taking advantage of excellent solid-state integrability, this new class of spin defects can be readily arranged in nanoscale proximity to target materials, showing great promise for realizing in-situ quantum sensing of microscopic spin and charge behaviors in vdW heterostructures. Here we report hexagonal boron nitride-based quantum imaging of field-free deterministic magnetic switching and electric current distributions in an all-vdW spin-orbit torque (SOT) system. By visualizing variations of nanoscale magnetic stray field profile of room-temperature 2D magnet Fe 3 GaTe 2 under different SOT conditions, we show how the magnetic switching evolves from deterministic to stochastic behavior due to the interplay between spin orientations, anisotropy and Joule heating. Micromagnetic simulations rationalize our results well, revealing the role of field-like SOT in inhibiting thermal fluctuation driven stochastic switching and chaotic multi-domain competition. This understanding, which is otherwise difficult to access by conventional transport measurements, offers valuable insights into material design, testing, and performance evaluation of next-generation vdW spintronic devices.

Imaging techniques↗

Thermal-Diode Sandwich Panel

Thermal diode sandwich panel transfers heat in one direction, but when heat load reversed, switches off and acts as thermal insulator. Proposed to control temperature in spacecraft and in supersonic missiles to protect internal electronics. In combination with conventional heat pipes, used in solar panels and other heat-sensitive systems.

Basiulis, A.↗

Thermal Actuator Identification and Control for Thermomechanical Real-Time Cyber–Physical Testing

Thermomechanical cyber–physical testing enables two-way thermal coupling between a numerical and an experimental subsystem. The interactions between the numerical model and the physical specimen occur through transfer systems, which enforce interface conditions. Thus, efficient control methodologies are necessary to achieve the desired interface interaction through thermal actuators with minimal error. This study introduces a novel thermal transfer system that imposes distributed cooling (or heating) thermal loads on a physical subsystem. First, the thermal actuator is identified considering switching-mode continuous dynamics for heating and cooling conditions. A switching-mode estimation algorithm is adopted to estimate the operating thermal cycle of the actuator in real-time. A control system is developed to experimentally impose the desired temperature and reduce tracking error (i.e., the error between the desired and actual temperature) under different thermal cycles. The identification and control of the thermal transfer system are then validated through a set of experiments considering different temperature rates of change. The developed control system is found to effectively minimize tracking errors in real-time cyber–physical experiments.

Herta Montoya↗

Extreme Temperature Performance of Automotive-Grade Small Signal Bipolar Junction Transistors

Electronics designed for space exploration missions must display efficient and reliable operation under extreme temperature conditions. For example, lunar outposts, Mars rovers and landers, James Webb Space Telescope, Europa orbiter, and deep space probes represent examples of missions where extreme temperatures and thermal cycling are encountered. Switching transistors, small signal as well as power level devices, are widely used in electronic controllers, data instrumentation, and power management and distribution systems. Little is known, however, about their performance in extreme temperature environments beyond their specified operating range; in particular under cryogenic conditions. This report summarizes preliminary results obtained on the evaluation of commercial-off-the-shelf (COTS) automotive-grade NPN small signal transistors over a wide temperature range and thermal cycling. The investigations were carried out to establish a baseline on functionality of these transistors and to determine suitability for use outside their recommended temperature limits.

Thermal Cycling↗

Power control electronics for cryogenic instrumentation

In order to achieve a high-efficiency high-density cryogenic instrumentation system, the power processing electronics should be placed in the cold environment along with the sensors and signal-processing electronics. The typical instrumentation system requires low voltage dc usually obtained from processing line frequency ac power. Switch-mode power conversion topologies such as forward, flyback, push-pull, and half-bridge are used for high-efficiency power processing using pulse-width modulation (PWM) or resonant control. This paper presents several PWM and multiresonant power control circuits, implemented using commercially available CMOS and BiCMOS integrated circuits, and their performance at liquid-nitrogen temperature (77 K) as compared to their room temperature (300 K) performance. The operation of integrated circuits at cryogenic temperatures results in an improved performance in terms of increased speed, reduced latch-up susceptibility, reduced leakage current, and reduced thermal noise. However, the switching noise increased at 77 K compared to 300 K. The power control circuits tested in the laboratory did successfully restart at 77 K.

Ray, Biswajit↗

Gas adsorption/absorption heat switch, phase 1

The service life and/or reliability of far-infrared sensors on surveillance satellites is presently limited by the cryocooler. The life and/or reliability, however, can be extended by using redundant cryocoolers. To reduce parasitic heat leak, each stage of the inactive redundant cryocooler must be thermally isolated from the optical system, while each stage of the active cryocooler must be thermally connected to the system. The thermal break or the thermal contact can be controlled by heat switches. Among different physical mechanisms for heat switching, mechanically activated heat switches tend to have low reliability and, furthermore, require a large contact force. Magnetoresistive heat switches are, except at very low temperatures, of very low efficiency. Heat switches operated by the heat pipe principle usually require a long response time. A sealed gas gap heat switch operated by an adsorption pump has no mechanical motion and should provide the reliability and long lifetime required in long-term space missions. Another potential application of a heat switch is the thermal isolation of the optical plane during decontamination.

Chan, C. K.↗

Micro-Scalable Thermal Control Device

A microscalable thermal control module consists of a Stirling cycle cooler that can be manipulated to operate at a selected temperature within the heating and cooling range of the module. The microscalable thermal control module is particularly suited for controlling the temperature of devices that must be maintained at precise temperatures. It is particularly suited for controlling the temperature of devices that need to be alternately heated or cooled. The module contains upper and lower opposing diaphragms, with a regenerator region containing a plurality of regenerators interposed between the diaphragms. Gaps exist on each side of each diaphragm to permit it to oscillate freely. The gap on the interior side one diaphragm is in fluid connection with the gap on the interior side of the other diaphragm through regenerators. As the diaphragms oscillate working gas is forced through the regenerators. The surface area of each regenerator is sufficiently large to effectively transfer thermal energy to and from the working gas as it is passed through them. The phase and amplitude of the oscillations can be manipulated electronically to control the steady state temperature of the active thermal control surface, and to switch the operation of the module from cooling to heating, or vice versa. The ability of the microscalable thermal control module to heat and cool may be enhanced by operating a plurality of modules in series, in parallel, or in connection through a shared bottom layer.

Matthew E. Moran↗

Toroidal Field Reversing Switch

A motor-driven, high-current switch is being designed by Stäubli Electrical Connectors in collaboration with Princeton Plasma Physics Laboratory to reverse the DIII-D Toroidal field coil current. The existing field reversing procedure requires approximately 4 h of labor performed between run days to reconfigure the bus work, thus requiring a separate run day to complete experimental scans with both field directions. This typically results in different wall conditions which complicate the results or make them invalid. The proposed switch will complete the reversal process in approximately 4-5 min, between shots, so that wall conditions are not a factor, and easily fits within the 10-12 min DIII-D shot cycle. The switch is a compact design fitting into a 157.5 × 41 cm envelope. The switch uses two copper pins that slide between Stäubli MULTILAM contacts. The switch is rated for total current of 180-kA dc for 10 s with a 12-min repetition rate; the maximum operating coil current is 124-kA dc. The switch diagnostics include: voltage drop, current monitor, thermal monitors, position sensors, and motor torque. Here, the switch is rated for 300 cycles per year, and 3000 cycles overall before contact replacement, with contact inspection yearly. The design details and operation of the switch are covered in this article.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

NASA Engineering and Safety Center Technical Bulletin No. 10-01: Power MOSFET Thermal Instability

In the quest for faster switching times and lower “on resistance” the Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET), produced since 1998, has achieved most intended goals. Unfortunately, lower “on resistance” and higher switching speeds in the designs now being produced allow the charge carrier dominated region to develop conditions that could lead to thermal runaway. Temperatures above 450º C on any location within the part can cause the metals to begin migrating causing a fatal short circuit.

Metal-Oxide Semiconductor Field-Effect Transistor ↗

Advanced Coating Compositions and Microstructures to Improve Uptime and Operational Flexibility in Cyclic, Low-Load Thermal Utility Plants

GE, the University of Tennessee, and Oak Ridge National Laboratory collaborated from 2020 to 2023 developing two key technologies for improving the viability of fuel switching and load following in thermal utility plants: a) cost-effective weld overlay compositions for boiler tubing b) cathodic arc coatings that deliver improvements in both erosion resistance and oxidation resistance in high temperature steam for HP turbine blades The team worked through a robust, logical project map to de-risk these two technologies and advance them from TRL 3 to TRL 6. For the cost-effective weld overlay, the team developed a ferritic filler material which was fabricated at a vendor for 18% the average market cost of Inconel 625 wire, had a corrosion rate 3x lower in conditions simulating a biomass-fired superheater and 10x lower in conditions simulating a coal-fired superheater, and was fabricated into prototype overlaid tubing that passed ASME requirements including transverse bending, dye penetrant inspection, and ASTM G-76 evaluation. For the cathodic arc coatings applied to steam turbine blades, the team developed a novel composition that was successfully transferred to a qualified vendor. The vendor was able to produce coated prototypes with 4x the as-deposited erosion resistance and 10.4x the post-steam-exposure erosion resistance of the TiN coating the vendor currently applies on GE steam turbine components, without significantly increasing process cost. These coated prototypes also passed a GE inspection and showed favorable performance in high temperature erosion, nanoindentation, sliding wear, scratch adhesion, and high cycle fatigue testing. If successfully deployed by GE, it is anticipated that the technologies will enable the following: • 25%-50% increase in time between outages for both boilers and HP turbines. • 50% decrease in cost for weld overlay on a per foot basis relative to todays NiCr alloys. • Adequate oxidation resistance and erosion for HP turbine inlet steam at >620°C and >220 bar. • No need for changes in component supply chain or any notable Capital Expenditures. 5 Decreasing component cost, increasing performance, and extending time between outages represent direct value propositions to GE and their customers. For the American consumer, these objectives translate into increased grid reliability (fewer unexpected outages), decreased Levelized Cost of Electricity, and improved environmental health (low-loading/load following to accelerate penetration of renewables). The results also have implications for wear resistant tooling, wire arc additive manufacturing, more durable components for syngas cleanup, and deployment of more efficient thermochemical pathways for carbon negative fuel production

09 BIOMASS FUELS↗

Investigation of Dynamic Temperature-Sensitive Electrical Parameters for Medium-Voltage Low-Current Silicon Carbide and Silicon Devices

This paper presents five dynamic temperature-sensitive electrical parameters (TSEPs) for the medium-voltage silicon carbide (SiC) and silicon (Si) devices. The theoretical temperature dependence of these parameters is analyzed. A test platform that enables to implement the temperature relevant dynamic characterization is developed. The tested TSEPs are summarized in terms of their relationship with junction temperature, drain/collector current, DC voltage, and external gate resistance. The comparison between the 3 kV 12 A Si IGBT and 3.3 kV 5 A SiC MOSFET with the identical TO-263 package is conducted. The results verify that the turn-off drain-source voltage switching rate achieves better thermal sensitivity for medium-voltage low-current SiC MOSFETs compared with Si IGBTs. Both the turn-on and turn-off delay time exhibit better thermal linearity for the two devices. The turn-off delay time further achieves five times better thermal sensitivity than the turn-on delay time for investigated medium-voltage SiC MOSFETs.

Ni, Ze↗

Inverter Reliability Estimation for Advanced Inverter Functionality

In the near future, grid operators are expected to regularly use advanced distributed energy resource (DER) functions, defined in IEEE 1547-2018, to perform a range of grid-support operations. Many of these functions adjust the active and reactive power of the device through commanded or autonomous modes, which will produce new stresses on the grid-interfacing power electronics components, such as DC/AC inverters. In previous work, multiple DER devices were instrumented to evaluate additional component stress under multiple reactive power setpoints. We utilize quasi-static time-series simulations to determine voltage-reactive power mode (volt-var) mission profile of inverters in an active power system. Mission profiles and loss estimates are then combined to estimate the reduction of the useful life of inverters from different reactive power profiles. It was found that the average lifetime reduction was approximately 0.15% for an inverter between standard unity power factor operation and the IEEE 1547 default volt-var curve based on thermal damage due to switching in the power transistors. For an inverter with an expected 20-year lifetime, the 1547 volt-var curve would reduce the expected life of the device by 12 days. This framework for determining an inverter's useful life from experimental and modeling data can be applied to any failure mechanism and advanced inverter operation.

component degradation↗

"Bottle-Brush" Heat Exchanger

Heat exchanger consists of a metal tube with wires extending inward from wall. Conduction of heat along wires improves heat transfer to gas or other filling. Fluid is heated throughout the cross section of tube. Suggested applications are refrigerators, heat engines, thermal instrumentation, and heat switches.

Tward, E.↗

Semiconductor technology program. Progress briefs

The current status of NBS work on measurement technology for semiconductor materials, process control, and devices is reported. Results of both in-house and contract research are covered. Highlighted activities include modeling of diffusion processes, analysis of model spreading resistance data, and studies of resonance ionization spectroscopy, resistivity-dopant density relationships in p-type silicon, deep level measurements, photoresist sensitometry, random fault measurements, power MOSFET thermal characteristics, power transistor switching characteristics, and gross leak testing. New and selected on-going projects are described. Compilations of recent publications and publications in press are included.

Bullis, W. M.↗

Multifunctional electrochemical memory stabilized by phase coexistence

Our growing computing needs, especially in applications that heavily rely on artificial intelligence (AI), motivate a search for new components that could substantially augment the performance of general-purpose digital computers. Beyond ON/OFF switching, new components with linear multistate analog resistive tuning, nonlinear volatile switching, spiking, oscillatory, stochastic and other complex functionalities could enable highly efficient neuromorphic computing schemes for AI information processing. Compared to the extreme multifunctionality of biological neurons, realizing all the above characteristics in a single, scalable analog component remains a grand challenge. Here we investigate electrochemical gating combined with localized thermal activation to program and switch a single, vertically integrated and dimensionally scaled electrothermal chemical random access memory (ETCRAM) with a channel and reservoir composed of phase-separated vanadium oxide. Closely related to electrochemical RAM (ECRAM), ETCRAM uses an integrated gate-heater electrode to overcome kinetic barriers that help retain states at ambient temperatures. In addition to synapse-like stable and programmable analog resistance states arising from redox-tunable phase coexistence, a single component exhibits neuron-like nonlinear conductance switching with a tunable threshold and self-driven dynamics owing to the thermally driven metal-insulator phase transition in vanadium dioxide. More broadly, we demonstrate that electrochemically stabilized phase coexistence could unlock analog electronics with novel functionality, stability, reconfigurability, and scalability.

Oh, Sangheon [Sandia National Lab. (SNL-CA), Liver↗

Non-linear MHD modelling of edge localized modes suppression by resonant magnetic perturbations in ITER

Edge localized modes (ELMs) suppression by resonant magnetic perturbations (RMPs) was studied with the non-linear magneto-hydro-dynamic (MHD) code JOREK for the ITER H-mode scenarios at 15 MA, 12.5 MA, 10 MA/5.3 T. In this study, the main aim was to demonstrate that ELMs can be suppressed by RMPs while the divertor 3D footprints of heat and particle fluxes remain within divertor material limits. The unstable peeling–ballooning modes responsible for ELMs without RMPs were modelled first for each scenario using numerically accessible parameters for ITER. Then the stabilization of ELMs by RMPs was modelled with the same parameters. RMP spectra, optimized by the linear MHD MARS-F code, with main toroidal harmonics N = 2, N = 3, N = 4 have been used as boundary conditions of the computational domain of JOREK, including realistic RMP coils, main plasma, scrape off layer (SOL) divertor and realistic first wall. The model includes all relevant plasma flows: toroidal rotation, two fluid diamagnetic effects and neoclassical poloidal friction. With RMPs, the main toroidal harmonic and the non-linearly coupled harmonics remain dominant at the plasma edge, producing saturated modes and a continuous MHD turbulent transport thereby avoiding ELM crashes in all scenarios considered here. The threshold for ELM suppression was found at a maximum RMP coils current of 45 kAt–60 kAt compared to the coils maximum capability of 90 kAt. In the high beta poloidal steady-state 10 MA/5.3 T scenario, a rotating QH-mode without ELMs was observed even without RMPs. In this scenario with RMPs N = 3, N = 4 at 20 kAt maximum current in RMP coils, similar QH-mode behaviour was observed however with dominant edge harmonic corresponding to the main toroidal number of RMPs. The present MHD modelling was limited in time by few tens of ms after RMPs were switched on until the magnetic energy of the modes saturates. As a consequence the thermal energy was still evolving on this time scale, far from the ITER confinement time scale and hence only the form of 3D footprints on the divertor targets can be indicated within this set-up. Also note, that the divertor physics was missing in this model, so realistic values of fluxes are out of reach in this modelling. However the stationary 3D divertor and particle fluxes could be simply extrapolated from these results to the stationary situation considering that a large power fraction should be radiated in the core and SOL and only about 50 MW power is going to the divertor, which is an arbitrary, but reasonable number used here. The 3D footprints with RMPs show the characteristic splitting with the main RMP toroidal symmetry. The maximum radial extension of the footprints typically was ~20 cm in inner divertor and ~40 cm in outer divertor with stationary heat fluxes decreasing further out from the initial strike point from ~5 MW m ₋2 to ~1 MW m ₋2 assuming a total power in the divertor and walls is 50 MW. The heat fluxes remain within the divertor target and baffle areas, however with rather small margin in the outer divertor which could be an issue for the first wall especially in transient regimes when part of the plasma thermal energy is released due to switching on the RMP coils. This fact should be considered when RMPs are applied with a more favorable application before or soon after the L–H transition, although optimization is required to avoid increasing the L–H power threshold with RMPs.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Imaging of Electrothermal Filament Formation in a Mott Insulator

Resistive switching—the current- and voltage-induced change of electrical resistance—is at the core of memristive devices, which play an essential role in the emerging field of neuromorphic computing. This study is about resistive switching in a Mott insulator, which undergoes a thermally driven metal-to-insulator transition. Two distinct switching mechanisms are reported for such a system: electric-field-driven resistive switching and electrothermal resistive switching. The latter results from an instability caused by Joule heating. Here, we present the visualization of the reversible resistive switching in a planar V 2 O 3 thin-film device using high-resolution wide-field microscopy in combination with electric transport measurements. We investigate the interaction of the electrothermal instability with the strain-induced spontaneous phase separation in the V 2 O 3 thin film at the Mott transition. The photomicrographs show the formation of a narrow metallic filament with a minimum width ≲500 nm. Although the filament formation and the overall shape of the current-voltage characteristics (IVCs) are typical of an electrothermal breakdown, we also observe atypical effects such as oblique filaments, filament splitting, and hysteretic IVCs with sawtoothlike jumps at high currents in the low-resistance regime. We are able to reproduce the experimental results in a numerical model based on a two-dimensional resistor network. This model demonstrates that resistive switching in this case is indeed electrothermal and that the intrinsic heterogeneity is responsible for the atypical effects. This heterogeneity is strongly influenced by strain, thereby establishing a link between switching dynamics and structural properties.

42 ENGINEERING↗