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At least 181 records · Page 10

Characterization Tests of WFC3 Filters

The WFC3 instrument to be installed on HST during the next servicing mission consists of a UVIS and an IR channel. Each channel is allocated its own complement of filters: 48 elements for the UVIS (42 filters, 5 quads, and 1 UV grism) and 17 slots for the IR (15 filters and 2 grisms). While a majority of the UVIS filters exhibit excellent performance consistent with or exceeding expectations, a subset show significant filter ghosts. Procurement of improved replacement filters is in progress and a summary of the characterization tests being performed on the new filters is presented. In the IR channel, while no filter ghosting was detected in any of the filters during thermal vacuum testing, the grisms were found to be installed incorrectly; they have been removed and will be reinstalled. In addition, due to the significantly improved response blueward of 800nm expected in the new substrate-removed IR detector (see Invited talk by R.A.Kimble, this volume), two IR filters originally constructed on a fused silica substrate are being remade using an IR transmitting color glass to block any visible light transmission. Tests of the new IR filters and preparations for the grism reinstallation are summarized

Baggett, S.↗

Catalytic Combustion of Propane/Air Mixtures on Platinum

A honeycomb catalyst of platinum (4.2 kg/cu m loading) over cordierite, with gamma-alumina washcoat, a cross section of 2.4 x 2.4 sq cm, a length of 7.6 cm, and a characteristic channel diameter of 1.4 mm is used as a steady flow reactor. Measurements are made with C3H8/air mixtures at 650 to 800 K inlet temperatures, 110 KPa pressure, 10 to 40 m/s inlet velocity, 0.19 to 0.32 equivalence ratios, and approximately 1.5 mole percent water content. The measured quantities are the substrate tempeature at ten axial locations, the exhaust gas temperature, the exhaust concentrations of CO, CO2, O2, and total hydrocarbons, and the pressure drop across the monolith. The measured quantities are compared with those computed with a two-dimensional steady-state model for axial and radial convection and diffusion of mass, momentum, energy and homogeneous (three overall reactions) and heterogeneous (infinitely fast) reactions. It is found that, under the tested conditions, most of the fuel is converted to CO2 and H2O at the surface. Gas-phase reactions tend rapidly to become more important as the temperature and equivalence ratio are increased and the flow velocity is decreased. Surface fuel conversion is much more rapid than fuel diffusion, resulting in diffusion-controlled oxidation.

Bruno, C.↗

Challenges and Opportunities in Gen3 Embedded Cooling with High-Quality Microgap Flow

Gen3, Embedded Cooling, promises to revolutionize thermal management of advanced microelectronic systems by eliminating the sequential conductive and interfacial thermal resistances which dominate the present 'remote cooling' paradigm. Single-phase interchip microfluidic flow with high thermal conductivity chips and substrates has been used successfully to cool single transistors dissipating more than 40kW/sq cm, but efficient heat removal from transistor arrays, larger chips, and chip stacks operating at these prodigious heat fluxes would require the use of high vapor fraction (quality), two-phase cooling in intra- and inter-chip microgap channels. The motivation, as well as the challenges and opportunities associated with evaporative embedded cooling in realistic form factors, is the focus of this paper. The paper will begin with a brief review of the history of thermal packaging, reflecting the 70-year 'inward migration' of cooling technology from the computer-room, to the rack, and then to the single chip and multichip module with 'remote' or attached air- and liquid-cooled coldplates. Discussion of the limitations of this approach and recent results from single-phase embedded cooling will follow. This will set the stage for discussion of the development challenges associated with application of this Gen3 thermal management paradigm to commercial semiconductor hardware, including dealing with the effects of channel length, orientation, and manifold-driven centrifugal acceleration on the governing behavior.

microchannel↗

Polycrystalline silicon on tungsten substrates

Thin films of electron-beam-vaporized silicon were deposited on fine-grained tungsten substrates under a pressure of about 1 x 10 to the -10th torr. Mass spectra from a quadrupole residual-gas analyzer were used to determine the partial pressure of 13 residual gases during each processing step. During separate silicon depositions, the atomically clean substrates were maintained at various temperatures between 400 and 780 C, and deposition rates were between 20 and 630 A min. Surface contamination and interdiffusion were monitored by in situ Auger electron spectrometry before and after cleaning, deposition, and annealing. Auger depth profiling, X-ray analysis, and SEM in the topographic and channeling modes were utilized to characterize the samples with respect to silicon-metal interface, interdiffusion, silicide formation, and grain size of silicon. The onset of silicide formation was found to occur at approximately 625 C. Above this temperature tungsten silicides were formed at a rate faster than the silicon deposition. Fine-grain silicon films were obtained at lower temperatures.

Bevolo, A. J.↗

Length minimization design considerations in photonic integrated circuits incorporating directional couplers

Because directional couplers involve channel waveguides which are very close to one another, transition regions to regions where channel waveguides are widely separated are utilized. The total length of a directional coupler and transition regions can be minimized for a particular degree of field confinement. Calculations presented for LiNbO3-, GaAlAs-, and SiO2/Si-based optical channel waveguides demonstrate the presence of a minimum total length corresponding to a particular degree of field confinement. The overall length at the minimum is shown to be significantly lower than for other values of field confinement allowing single-mode operation. This implies that either more devices can be integrated on a substrate or that less material is needed for an integrated optical circuit.

Boyd, Joseph T.↗

Fabrication and Characterization of a NIR-FIR Dichroic for the Infrared Interferometer BETTII

BETTII is a balloon-borne far infra-red (FIR: 30-100 µm) interferometer that also uses a near-infrared (NIR: 1-2.5 µm) channel for fine pointing sensing using stars. We have developed an inductive grid dichroic to divide the incoming beam into two components, by reflecting FIR light and transmitting NIR light. The dichroic is fabricated using focused electron beam technology to produce a 1 µm period, 100 nm width metal grid on a sapphire substrate in order to have high reflectance for FIR wavelengths. Here we discuss the design and the detailed manufacturing process for such a dichroic. The transmission and reflectance characteristics are also presented. We discuss them in context of the BETTII requirements.

Dhabal, Arnab↗

The AMPA receptor subunit GluR1 regulates dendritic architecture of motor neurons

The morphology of the mature motor neuron dendritic arbor is determined by activity-dependent processes occurring during a critical period in early postnatal life. The abundance of the AMPA receptor subunit GluR1 in motor neurons is very high during this period and subsequently falls to a negligible level. To test the role of GluR1 in dendrite morphogenesis, we reintroduced GluR1 into rat motor neurons at the end of the critical period and quantitatively studied the effects on dendrite architecture. Two versions of GluR1 were studied that differed by the amino acid in the "Q/R" editing site. The amino acid occupying this site determines single-channel conductance, ionic permeability, and other essential electrophysiologic properties of the resulting receptor channels. We found large-scale remodeling of dendritic architectures in a manner depending on the amino acid occupying the Q/R editing site. Alterations in the distribution of dendritic arbor were not prevented by blocking NMDA receptors. These observations suggest that the expression of GluR1 in motor neurons modulates a component of the molecular substrate of activity-dependent dendrite morphogenesis. The control of these events relies on subunit-specific properties of AMPA receptors.

Non-NASA Center↗

NASA Tech Briefs, July 2013

Dielectrophoresis-Based Particle Sensor Using Nanoelectrode Arrays; Multi-Dimensional Damage Detection for Surfaces and Structures; ULTRA: Underwater Localization for Transit and Reconnaissance Autonomy; Autonomous Cryogenic Leak Detector for Improving Launch Site Operations; Submillimeter Planetary Atmospheric Chemistry Exploration Sounder; Method for Reduction of Silver Biocide Plating on Metal Surfaces; Silicon Micromachined Microlens Array for THz Antennas; Forward-Looking IED Detector Ground Penetrating Radar; Fully Printed, Flexible, Phased Array Antenna for Lunar Surface Communication, Battery Charge Equalizer with Transformer Array; An Efficient, Highly Flexible Multi-Channel Digital Downconverter Architecture; Dimmable Electronic Ballast for a Gas Discharge Lamp; Conductive Carbon Nanotube Inks for Use with Desktop Inkjet Printing Technology; Enhanced Schapery Theory Software Development for Modeling Failure of Fiber-Reinforced Laminates; High-Performance, Low-Temperature-Operating, Long-Lifetime Aerospace Lubricants; Carbon Nanotube Microarrays Grown on Nanoflake Substrates; Differential Muon Tomography to Continuously Monitor Changes in the Composition of Subsurface Fluids; Microgravity Drill and Anchor System; 20 Granular Media-Based Tunable Passive Vibration Suppressor; 21 Miga Aero Actuator and 2D Machined Mechanical Binary Latch; Micro-XRF for In Situ Geological Exploration of Other Planets; Hydrogen-Enhanced Lunar Oxygen Extraction and Storage Using Only Solar Power; Uplift of Ionospheric Oxygen Ions During Extreme Magnetic Storms; Miniaturized, High-Speed, Modulated X-Ray Source; Hollow-Fiber Spacesuit Water Membrane Evaporator 25 High-Power Single-Mode 2.65-micrometers InGaAsSb/AlInGaAsSb Diode Lasers; Optical Device for Converting a Laser Beam Into Two Co-aligned but Oppositely Directed Beams; A Hybrid Fiber/Solid-State Regenerative Amplifier with Tunable Pulse Widths for Satellite Laser Ranging; X-Ray Diffractive Optics; SynGenics Optimization System (SynOptSys); 29 CFD Script for Rapid TPS Damage Assessment; radEq Add-On Module for CFD Solver Loci-CHEM; Science Opportunity Analyzer (SOA) Version 8; 30 Autonomous Byte Stream Randomizer; Distributed Engine Control Empirical/Analytical Verification Tools; Dynamic Server-Based KML Code Generator Method for Level-of-Detail Traversal of Geospatial Data; Automated Planning of Science Products Based on Nadir Overflights and Alerts for Onboard and Ground Processing; Linked Autonomous Interplanetary Satellite Orbit Navigation; Risk-Constrained Dynamic Programming for Optimal Mars Entry, Descent, and Landing; Scheduling Operations for Massive Heterogeneous Clusters; Deepak Condenser Model (DeCoM); Flight Software Math Library; Recirculating 1-K-Pot for Pulse-Tube Cryostats; 35 Method for Processing Lunar Regolith Using Microwaves; Wells for In Situ Extraction of Volatiles from Regolith (WIEVR); and Estimating the Backup Reaction Wheel Orientation Using Reaction Wheel Spin Rates Flight Telemetry from a Spacecraft.

Source record↗

Buried Oxide Densification for Low Power, Low Voltage CMOS Applications

Special technology and circuit architecture are of growing interest for implementation of circuits which operate at low supply voltages and consume low power levels without sacrificing performance[1]. Use of thin buried oxide SOI substrates is a primary approach to simultaneously achieve these goals. A significant aspect regarding SIMOX SOI for low voltage, low power applications is the reliability and performance of the thin buried oxide. In addition, when subjected to high total dose irradiation, the silicon islands within the BOX layer of SIMOX can store charges and significantly effect the back channel threshold voltages of devices. Thus, elimination of the islands within the buried oxide (BOX) layer is preferred in order to prevent leakage through these conductive islands and charge build-up within the buried oxide layer. A differential (2-step) ramp rate as applied to full and 100 nm BOX SIMOX was previously reported to play a significant role in the stoichiometry and island formation within the buried layer[2]. This paper focus is on the properties of a thin (120nm) buried oxide as a function of the anneal ramp rate and the temperature of anneal. In this research, we have found an improvement in the buried oxide stoichiometry with the use of a slower, singular ramp rate for specified thin buried oxides, with slower ramp rates and higher temperatures of anneal suggested for reducing the presence of Si islands within the BOX layer.

Allen, L. P.↗

The Interaction of Impact Melt, Impact-Derived Sediment, and Volatiles at Crater Tooting, Mars

We are producing a 1:200K geologic map of Tooting crater, Mars. This work has shown that an incredible amount of information can be gleaned from mapping at even larger scales (1:10K 1:25K) using CTX and HiRISE data. We have produced two new science papers (Morris et al., 2010; Mouginis-Mark and Boyce, 2010) from this mapping, and additional science questions continue to arise from our on-going analysis of Tooting crater: 1) What was the interplay of impact melt and volatile-rich sediments that, presumably, were created during the impact? Kieffer and Simonds [1980] predicted that melt would have been destroyed during impacts on Mars because of the volatiles present within the target we seek to understand if this is indeed the case at Tooting crater. We have identified pitted and fractured terrain that formed during crater modification, but the timing of the formation of these materials in different parts of the crater remains to be resolved. Stratigraphic relationships between these units and the central peak may reveal deformation features as well as overlapping relationships. 2) Morris et al. [2010] identified several lobate flows on the inner and outer walls of Tooting crater. It is not yet clear what the physical characteristics of the source areas of these flows really are; e.g., what are the sizes of the source areas, what elevations are they located at relative to the floor of the crater, are they interconnected, and are they on horizontal or tilted surfaces? 3) What were the details of dewatering of the inner wall of Tooting crater (Fig. 1)? We find evidence within Tooting crater of channels carved by water release, and the remobilization of sediment (which is inferred to have formed during the impact event). Sapping can be identified along the crest of unit 8 near the floor of the crater (Fig. 2a, 2b). This unit displays amphitheater-headed canyons that elsewhere on Mars are typically attributed to water leaking from the substrate [Laity and Malin, 1985; Malin and Edgett, 2000].

Mouginis-Mark, P.↗

Documenting Chemical Assimilation in a Basaltic Lava Flow

Lava channels are features seen throughout the inner Solar System, including on Earth, the Moon, and Mars. Flow emplacement is therefore a crucial process in the shaping of planetary surfaces. Many studies have investigated the dynamics of lava flow emplacement, both on Earth and on the Moon [1,2,3] but none have focused on how the compositional and structural characteristics of the substrate over which a flow was emplaced influenced its final flow morphology. Within the length of one flow, it is common for flows to change in morphology, a quality linked to lava rheology (a function of multiple factors including viscosity, temperature, composition, etc.). The relationship between rheology and temperature has been well-studied [4,5,6] but less is understood about the relationship between a pre-flow terrain's chemistry and how the interaction between this flow and the new flow might affect lava rheology and therefore emplacement dynamics. Lava erosion. Through visual observations of active terrestrial flows, lava erosion has been well-documented [i.e. 7,8,9,10]. Lava erosion is the process by which flow composition is altered as the active lava melts and assimilates the pre-flow terrain over which it moves. Though this process has been observed, there is only one instance of where it was been geochemically documented.

assimilation↗

NASA Tech Briefs, December 2009

Topics include: A Deep Space Network Portable Radio Science Receiver; Detecting Phase Boundaries in Hard-Sphere Suspensions; Low-Complexity Lossless and Near-Lossless Data Compression Technique for Multispectral Imagery; Very-Long-Distance Remote Hearing and Vibrometry; Using GPS to Detect Imminent Tsunamis; Stream Flow Prediction by Remote Sensing and Genetic Programming; Pilotless Frame Synchronization Using LDPC Code Constraints; Radiometer on a Chip; Measuring Luminescence Lifetime With Help of a DSP; Modulation Based on Probability Density Functions; Ku Telemetry Modulator for Suborbital Vehicles; Photonic Links for High-Performance Arraying of Antennas; Reconfigurable, Bi-Directional Flexfet Level Shifter for Low-Power, Rad-Hard Integration; Hardware-Efficient Monitoring of I/O Signals; Video System for Viewing From a Remote or Windowless Cockpit; Spacesuit Data Display and Management System; IEEE 1394 Hub With Fault Containment; Compact, Miniature MMIC Receiver Modules for an MMIC Array Spectrograph; Waveguide Transition for Submillimeter-Wave MMICs; Magnetic-Field-Tunable Superconducting Rectifier; Bonded Invar Clip Removal Using Foil Heaters; Fabricating Radial Groove Gratings Using Projection Photolithography; Gratings Fabricated on Flat Surfaces and Reproduced on Non-Flat Substrates; Method for Measuring the Volume-Scattering Function of Water; Method of Heating a Foam-Based Catalyst Bed; Small Deflection Energy Analyzer for Energy and Angular Distributions; Polymeric Bladder for Storing Liquid Oxygen; Pyrotechnic Simulator/Stray-Voltage Detector; Inventions Utilizing Microfluidics and Colloidal Particles; RuO2 Thermometer for Ultra-Low Temperatures; Ultra-Compact, High-Resolution LADAR System for 3D Imaging; Dual-Channel Multi-Purpose Telescope; Objective Lens Optimized for Wavefront Delivery, Pupil Imaging, and Pupil Ghosting; CMOS Camera Array With Onboard Memory; Quickly Approximating the Distance Between Two Objects; Processing Images of Craters for Spacecraft Navigation; Adaptive Morphological Feature-Based Object Classifier for a Color Imaging System; Rover Slip Validation and Prediction Algorithm; Safety and Quality Training Simulator; Supply-Chain Optimization Template; Algorithm for Computing Particle/Surface Interactions; Cryogenic Pupil Alignment Test Architecture for Aberrated Pupil Images; and Thermal Transport Model for Heat Sink Design.

Source record↗

Fabrication and Characterization of Diffusion Bonds for Silicon Carbide

Diffusion bonds of silicon carbide (SiC) were fabricated using several different types of titanium (Ti) based interlayers between the SiC substrates. The interlayers were an alloyed Ti foil, a pure Ti foil, and a physically vapor deposited (PVD) Ti coating. Microscopy was conducted to evaluate the cross-sections of the resulting bonds. Microprobe analysis identified reaction formed phases in the diffusion bonded region. Uniform and well adhered bonds were formed between the SiC substrates. In the case where the alloyed Ti foil or a thick Ti coating (i.e. 20 micron) was used as the interlayer, microcracks and several phases were present in the diffusion bonds. When a thinner interlayer was used (i.e. 10 micron PVD Ti), no microcracks were observed and only two reaction formed phases were present. The two phases were preferred and fully reacted phases that did not introduce thermal stresses or microcracks during the cool-down stage after processing. Diffusion bonded samples were evaluated with the non-destructive evaluation (NDE) methods of pulsed thermography and immersion ultrasonic testing. Joined SiC substrates that were fully bonded and that had simulated bond flaws in the interlayer were also evaluated using immersion ultrasound. Pull testing was conducted on the bonds to determine the tensile strength. To demonstrate the joining approach for a complex multilayered component for a low NOx injector application, the diffusion bonding approach was used to join three 4" diameter SiC discs that contained complex fuel and air flow channels.

Halbig, Michael↗

Development of Low-Noise High Value Chromium Silicide Resistors for Cryogenic Detector Applications

Extremely high sensitivity detectors, such as silicon bolometers are required in many NASA missions for detection of photons from the x-ray to the far infrared regions. Typically, these detectors are cooled to well below the liquid helium (LHe) temperature (4.2 K) to achieve the maximum detection performance. As photoconductors, they are generally operated with a load resistor and a pre-set bias voltage, which is then coupled to the input gate of a source-follower Field Effect Transistor (FET) circuit. It is imperative that the detector system signal to noise performance be limited by the noise of the detector and not by the noise of the external components. The load resistor value is selected to optimize the detector performance. These two criteria tend to be contradictory in that these detectors require load resistors in the hundreds of megaohms, which leads to a higher Johnson noise. Additionally, the physical size of the resistor must be small for device integration as required by such missions as the NASA High Resolution Airborne Wide-Band Camera (HAWC) instrument and the Submillimeter High Angular Resolution Camera (SHARC) for the Caltech Submillimeter Observatory (CSO). We have designed, fabricated and characterized thin film resistors using a CrSi/TiW/Al metal system on optical quality quartz substrates. The resistor values range from 100 megaohms to over 650 megaohms and are Johnson noise limited at LHe temperatures. The resistor film is sputtered with a sheet resistance ranging from 300 ohms to 1600 ohms and the processing sequence developed for these devices allows for chemically fine tuning the sheet resistance in-situ. The wafer fabrication process was of sufficiently high yield (>80%) providing clusters of good resistors for integrated multiple detector channels, a very important feature in the assembly of these two instruments.

Jhabvala, Murzy↗

The Summer 1997 Eruption at Pillan Patera on Io: Implications for Ultrabasic Lava Flow Emplacement

Galileo data and numerical modeling were used to investigate the summer 1977 eruption at Pillan Patera on Io. This event, now defined as "Pillanian" eruption style, included a high-temperature (greater than 1600 C), possible ultrabasic , 140-km-high plume eruption that deposited dark, orthopyroxene-rich pyroclastic material over greater than 125,000 sq km, followed by emplacement of dark flow-like material over greater than 3100 sq km to the north of the caldera. We estimate that the high-temperature, energetic episode of this eruption had a duration of 52 - 167 days between May and September 1997, with peak eruption temperatures around June 28, 1997. Galileo 20 m/pixel images of part of the Pillan flow field show a wide-spread, rough, pitted surface that is unlike any flow surface we have seen before. We suggest that this surface may have resulted from: 1. A fractured lava crust formed during rapid, low-viscosity lava surging, perhaps including turbulent flow emplacement. 2. Disruption of the lava flow by explosive interaction with a volatile-rich substrate. or 3. A combination of 1 and 2 with or without accumulation of pyroclastic material on the surface. Well-developed flow lobes are observed, suggesting that this is a relatively distant part of the flow field.Shadow measurements at flow margins indicate a thickness of-8 - 10 m. We have modeled the emplacement of putative ultrabasic flow from the summer 1997 Pillan eruption using constraints from new Galileo data. Results suggest that either laminar sheet flows or turbulent channelized flows could have traveled 50 - 150 km on a flat, unobstructed surface, which is consistent with the estimated length of the Pillan flow field (approx. 60 km). Our modeling suggests low thermal erosion rates (less than 4.1 m/d), and that the formation of deep (greater than 20 m) erosion channels was unlikely, especially distal to the source. We calculate a volumetric flow rate of approx. 2 - 7 x 10(exp 3)cu m/s, which is greater than those for typical Mauna Loa/Kilaueaq flows but comparable to those for the (1783) Laki eruption and the inferred flow rates of the Roza flows in the Columbia River flood basalts. The differences in ultrabasic eruption styles on Earth and Io appear to be controlled by the different eruption environments; Plumes at sites of ultrabasic eruptions on Io suggest strong magma-volatile interactions on a low-gravity body lacking an atmosphere, whereas the geology at sites of komatiite eruptions on Earth suggest mostly submarine emplacement of thick flows with a pronounced lack of subaerial explosive activity.

Williams, David A.↗

The Summer 1997 Eruption at Pillan Patera on Io: Implications for Ultrabasic Lava Flow Emplacement

Galileo data and numerical modeling were used to investigate the summer 1997 eruption at Pillan Patera on Io. This event, now defined as 'Pillanian' eruption style, included a high-temperature (greater than 1600 C), possibly ultrabasic, 140-km-high plume eruption that deposited dark, orthopyroxene-rich pyroclastic material over greater than 125,000 sq km, followed by emplacement of dark flow-like material over greater than 3100 sq km to the north of the caldera. We estimate that the high-temperature, energetic episode of this eruption had a duration of 52- 167 days between May and September 1997, with peak eruption temperatures around June 28, 1997. Galileo 20 m/pixel images of part of the Pillan flow field show a widespread, rough, pitted surface that is unlike any flow surface we have seen before. We suggest that th.s surface may have resulted from (1) a fractured lava crust formed during rapid, low-viscosity lava surging, perhaps including turbulent flow emplacement; (2) disruption of the lava flow by explosive interaction with a volatile-rich substrate: or (3) a combination of 1 and 2 with or without accumulation of pyroclastic materials on the surface. Well-developed flow lobes are observed, suggesting that this is a relatively distal part of the flow field. Shadow measurements at flow margins indicate a thickness of approx. 8-10 m. We have modeled the emplacement of putative ultrabasic flows from the summer 1997 Pillan eruption using constraints from new Galileo data. Results suggest that either laminar sheet flows or turbulent channelized flows could have traveled 50-150 km on a flat. unobstructed surface, which is consistent with the estimated length of the Pillan flow field (approx. 60 km). Our modeling suggests low thermal erosion rates (less than 0.1 m/d), and that the formation of deep (greater than 20 m) erosion channels was unlikely, especially distal to the source. We calculate a volumetric flow rate of approx. 2-7 x l0(exp 3) cu m/s, which is greater than those for typical Mauna Loa/Kilauea flows but comparable to those for the (1783) Laki eruption and the inferred flow rates of the Roza flows in the Columbia River flood basalts. The differences in ultrabasic eruption styles on Earth and Io appear to be controlled by the different eruption environments: Plumes at sites of ultrabasic eruptions on Io suggest strong magma-volatile: interactions on a low-gravity body lacking an atmosphere, whereas the geology at sites of komatiite eruptions on Earth suggest mostly submarine emplacement of thick flows with a pronounced lack of subaerial explosive activity.

Williams, David A.↗

NASA Tech Briefs, March 2014

Topics include: Data Fusion for Global Estimation of Forest Characteristics From Sparse Lidar Data; Debris and Ice Mapping Analysis Tool - Database; Data Acquisition and Processing Software - DAPS; Metal-Assisted Fabrication of Biodegradable Porous Silicon Nanostructures; Post-Growth, In Situ Adhesion of Carbon Nanotubes to a Substrate for Robust CNT Cathodes; Integrated PEMFC Flow Field Design for Gravity-Independent Passive Water Removal; Thermal Mechanical Preparation of Glass Spheres; Mechanistic-Based Multiaxial-Stochastic-Strength Model for Transversely-Isotropic Brittle Materials; Methods for Mitigating Space Radiation Effects, Fault Detection and Correction, and Processing Sensor Data; Compact Ka-Band Antenna Feed with Double Circularly Polarized Capability; Dual-Leadframe Transient Liquid Phase Bonded Power Semiconductor Module Assembly and Bonding Process; Quad First Stage Processor: A Four-Channel Digitizer and Digital Beam-Forming Processor; Protective Sleeve for a Pyrotechnic Reefing Line Cutter; Metabolic Heat Regenerated Temperature Swing Adsorption; CubeSat Deployable Log Periodic Dipole Array; Re-entry Vehicle Shape for Enhanced Performance; NanoRacks-Scale MEMS Gas Chromatograph System; Variable Camber Aerodynamic Control Surfaces and Active Wing Shaping Control; Spacecraft Line-of-Sight Stabilization Using LWIR Earth Signature; Technique for Finding Retro-Reflectors in Flash LIDAR Imagery; Novel Hemispherical Dynamic Camera for EVAs; 360 deg Visual Detection and Object Tracking on an Autonomous Surface Vehicle; Simulation of Charge Carrier Mobility in Conducting Polymers; Observational Data Formatter Using CMOR for CMIP5; Propellant Loading Physics Model for Fault Detection Isolation and Recovery; Probabilistic Guidance for Swarms of Autonomous Agents; Reducing Drift in Stereo Visual Odometry; Future Air-Traffic Management Concepts Evaluation Tool; Examination and A Priori Analysis of a Direct Numerical Simulation Database for High-Pressure Turbulent Flows; and Resource-Constrained Application of Support Vector Machines to Imagery.

Source record↗

Metal-semiconductor interfacial reactions - Ni/Si system

X-ray photoelectron spectroscopy and channeling measurements with MeV He-4(+) ions have been used to probe the structure of the interface in the Ni/Si system. It is found that reactions occur where Ni is deposited on Si at 10 to the -10th torr: Si atoms are displaced from lattice sites, the Ni atoms are in an Si-rich environment, and the Ni/Si interface is graded in composition. Composition gradients are present at both interfaces in the Si/Ni2/Si/Ni system. For the Ni-Si system, cooling the substrate to 100 K slows down the reaction rate. The temperature dependence of the interfacial reactivity indicates the kinetic nature of metal-semiconductor interfaces.

Cheung, N. W.↗