Na 2 Mn 3 Se 4 : Strongly Frustrated Antiferromagnetic Semiconductor with Complex Magnetic Structure
A new ternary selenide, Na 2 Mn 3 Se 4 , was prepared by a stoichiometric reaction between Na 2 Se 4 and metallic Mn at 923 K. Crystal structure determination revealed a new structure type, built of alternating layers of Na + ions and [Mn 3 Se 4 ] 2– anionic slabs. Band structure calculations indicate that Na 2 Mn 3 Se 4 is an indirect band gap semiconductor with E g = 1.59 eV, although a direct band gap is only marginally larger, at 1.64 eV. The material shows antiferromagnetic (AFM) ordering at 27 K, while the Weiss constant of ~–400 K suggests much stronger nearest-neighbor AFM exchange between the Mn sites. This discrepancy is attributed to the strong spin frustration caused by a triangulated arrangement of the Mn sites in the [Mn 3 Se 4 ] 2– layer. In conclusion, the magnetic frustration leads to the stabilization of a complex AFM ordered structure with non-collinear arrangement of the Mn magnetic moments, as established from neutron diffraction data.