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SF4 is Silicon tetrafluoride-like structured and crystallizes in the tetragonal I-42m space group. The structure is zero-dimensional and consists of two sulfur tetrafluoride molecules. S4+ is bonded in a distorted trigonal pyramidal geometry to four equivalent F1- atoms. All S–F bond lengths are 1.73 Å. F1- is bonded in a single-bond geometry to one S4+ atom.
CrN2 is Silicon Disuphide structured and crystallizes in the orthorhombic Ibam space group. The structure is one-dimensional and consists of two CrN2 ribbons oriented in the (0, 1, 0) direction. Cr6+ is bonded in a 4-coordinate geometry to four equivalent N3- atoms. All Cr–N bond lengths are 1.75 Å. N3- is bonded in an L-shaped geometry to two equivalent Cr6+ atoms.
SiS2 is Silicon Disuphide structured and crystallizes in the orthorhombic Ibam space group. The structure is one-dimensional and consists of two SiS2 ribbons oriented in the (1, 0, 0) direction. Si4+ is bonded to four equivalent S2- atoms to form edge-sharing SiS4 tetrahedra. All Si–S bond lengths are 2.15 Å. S2- is bonded in an L-shaped geometry to two equivalent Si4+ atoms.
BeCl2 is Silicon Disuphide structured and crystallizes in the orthorhombic Ibam space group. The structure is one-dimensional and consists of two BeCl2 ribbons oriented in the (1, 0, 0) direction. Be2+ is bonded to four equivalent Cl1- atoms to form edge-sharing BeCl4 tetrahedra. All Be–Cl bond lengths are 2.04 Å. Cl1- is bonded in an L-shaped geometry to two equivalent Be2+ atoms.
TcO4NH4 is Silicon tetrafluoride-derived structured and crystallizes in the tetragonal I4_1/a space group. The structure is zero-dimensional and consists of four ammonium molecules and four TcO4 clusters. In each TcO4 cluster, Tc7+ is bonded in a tetrahedral geometry to four equivalent O2- atoms. All Tc–O bond lengths are 1.74 Å. O2- is bonded in a single-bond geometry to one Tc7+ atom.
NH4IO4 is Silicon tetrafluoride-derived structured and crystallizes in the tetragonal I4_1/a space group. The structure is zero-dimensional and consists of four ammonium molecules and four IO4 clusters. In each IO4 cluster, O2- is bonded in a single-bond geometry to one I1- atom. The O–I bond length is 1.80 Å. I1- is bonded in a tetrahedral geometry to four equivalent O2- atoms.
TlCl4NH4 is Silicon tetrafluoride-derived structured and crystallizes in the tetragonal I4_1/a space group. The structure is zero-dimensional and consists of four ammonium molecules and four TlCl4 clusters. In each TlCl4 cluster, Tl3+ is bonded in a tetrahedral geometry to four equivalent Cl1- atoms. All Tl–Cl bond lengths are 2.48 Å. Cl1- is bonded in a single-bond geometry to one Tl3+ atom.
BeBr2 is Silicon Disuphide structured and crystallizes in the orthorhombic Ibam space group. The structure is one-dimensional and consists of two BeBr2 ribbons oriented in the (1, 0, 0) direction. Be2+ is bonded to four equivalent Br1- atoms to form edge-sharing BeBr4 tetrahedra. All Be–Br bond lengths are 2.20 Å. Br1- is bonded in an L-shaped geometry to two equivalent Be2+ atoms.
SiSe2 is Silicon Disuphide structured and crystallizes in the orthorhombic Ibam space group. The structure is one-dimensional and consists of two SiSe2 ribbons oriented in the (1, 0, 0) direction. Si4+ is bonded to four equivalent Se2- atoms to form edge-sharing SiSe4 tetrahedra. All Si–Se bond lengths are 2.30 Å. Se2- is bonded in an L-shaped geometry to two equivalent Si4+ atoms.
InCl4NH4 is Silicon tetrafluoride-derived structured and crystallizes in the tetragonal I4_1/a space group. The structure is zero-dimensional and consists of four ammonium molecules and four InCl4 clusters. In each InCl4 cluster, In3+ is bonded in a tetrahedral geometry to four equivalent Cl1- atoms. All In–Cl bond lengths are 2.40 Å. Cl1- is bonded in a single-bond geometry to one In3+ atom.
TlClO4 is Silicon tetrafluoride-derived structured and crystallizes in the cubic F-43m space group. The structure is zero-dimensional and consists of four thallium molecules and four ClO4 clusters. In each ClO4 cluster, O is bonded in a single-bond geometry to one Cl atom. The O–Cl bond length is 1.47 Å. Cl is bonded in a tetrahedral geometry to four equivalent O atoms.
AgClO4 is Silicon tetrafluoride-derived structured and crystallizes in the cubic F-43m space group. The structure is zero-dimensional and consists of four silver molecules and four ClO4 clusters. In each ClO4 cluster, O is bonded in a single-bond geometry to one Cl atom. The O–Cl bond length is 1.47 Å. Cl is bonded in a tetrahedral geometry to four equivalent O atoms.
BeI2 is Silicon Disuphide structured and crystallizes in the orthorhombic Ibam space group. The structure is one-dimensional and consists of two BeI2 ribbons oriented in the (1, 0, 0) direction. Be2+ is bonded to four equivalent I1- atoms to form edge-sharing BeI4 tetrahedra. All Be–I bond lengths are 2.43 Å. I1- is bonded in a distorted L-shaped geometry to two equivalent Be2+ atoms.
NClO4 is Silicon tetrafluoride-derived structured and crystallizes in the cubic F-43m space group. The structure is zero-dimensional and consists of four ammonia molecules and four ClO4 clusters. In each ClO4 cluster, O is bonded in a single-bond geometry to one Cl atom. The O–Cl bond length is 1.46 Å. Cl is bonded in a tetrahedral geometry to four equivalent O atoms.
SiO2 is Silicon Disuphide structured and crystallizes in the orthorhombic Ibam space group. The structure is one-dimensional and consists of two SiO2 ribbons oriented in the (0, 1, 0) direction. Si4+ is bonded to four equivalent O2- atoms to form distorted edge-sharing SiO4 tetrahedra. All Si–O bond lengths are 1.67 Å. O2- is bonded in an L-shaped geometry to two equivalent Si4+ atoms.
The laminar burning rate, the explosion pressure, and the pressure rise coefficient have been measured for silane-nitrous oxide-argon mixtures using the spherically expanding flame technique in a constant volume combustion chamber. For these three parameters, the values obtained were higher than for hydrogen-nitrous oxide-argon and typical hydrocarbon-based mixtures. As an example, a maximum burning rate of 1800 g/m 2 s was measured at 101 kPa, whereas under similar conditions, a maximum burning rate around 950 g/m 2 s has been reported for hydrogen-nitrous oxide-argon mixtures. Here, the condensed combustion products formed in the silane-nitrous oxide-argon flames were sampled and characterized using electron micrograph, electronic diffraction, energy-dispersive spectroscopy, and X-ray powder diffraction. For all equivalence ratios, silica spherical particles with a mean diameter in the range 200-300 nm were observed. In addition, for mixtures with Φ ≥2.2, silicon nanowires were formed. X-ray diffraction experiments showed that the silicon nanowires are composed of a material referred to as “metal silicon” characterized by a cubic structure (lattice parameter: a = 5.425 Å) with the Fm-3m space group.
SiSe2 is Silicon Disuphide-like structured and crystallizes in the orthorhombic Ibam space group. The structure is one-dimensional and consists of two SiSe2 ribbons oriented in the (1, 0, 0) direction. Si4+ is bonded to four equivalent Se2- atoms to form edge-sharing SiSe4 tetrahedra. All Si–Se bond lengths are 2.30 Å. Se2- is bonded in a distorted L-shaped geometry to two equivalent Si4+ atoms.
SiO2 is Silicon Disuphide-like structured and crystallizes in the orthorhombic Ibam space group. The structure is one-dimensional and consists of two SiO2 ribbons oriented in the (1, 0, 0) direction. Si4+ is bonded to four equivalent O2- atoms to form distorted edge-sharing SiO4 tetrahedra. All Si–O bond lengths are 1.67 Å. O2- is bonded in an L-shaped geometry to two equivalent Si4+ atoms.