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NASA NTRS1990

LWIR detector research in InAsSb/InAs

The InAsSb/InSb strained-layer system forms a type-II superlattice in the Sb-rich region of the phase diagram. The band gap of InAsSb/InSb strained-layer superlattices grown on lattice-matched buffers can be varied continuously to produce semiconducting systems with band gaps ranging from that of InSb (0.23 eV with an absorption edge at 5.5 microns at 77 K) to 0. The semiconductor to semimetal transition occurs at As concentrations of approximately 33 percent, with the precise value dependent upon the strain and quantum well dimensions. At higher As content, the system is a semimetal. The authors fabricated photovoltaic detectors with high D asterisk at 77 K at wavelengths beyond 10 microns, and both photovoltaic and photoconductive detectors have been demonstrated with response to 15 microns. The photoconductive detectors exhibit gain of up to 100. Details of the materials growth, studies of the band structure and properties, device processing and the detector performance observed to date in these systems are discussed.

Peercy, Paul S.↗

NASA NTRS1990

Electro-optic network analyzer

The bandwidth of frequency domain measurement methods of electrical signals has usually been far greater than the bandwidth of time domain methods. The primary limits of the time domain approach have been the 20 to 30 GHz bandwidth limit for electronic waveform acquisition instrumentation, and the lack of usable electrical pulse generators for excitation of a test device. The bandwidth of frequency domain network analysis appears to have reached a plateau of between 100 to 200 GHz, while time domain measurement have improved markedly in both bandwidth and sensitivity with the introduction of the pulsed laser based electro-optic sampling approach. Network analysis or the measurement of device scattering parameters provides information necessary to the design of electronic network such as high frequency amplifiers, mixers, and phase shifter. The bandwidth of frequency domain network analysis is currently being exceeded by the next generations of high frequency transistors and devices. Thus the electro-optic approach is a natural means of extending network analysis into the range above 100 GHz by employing time domain methods. In this approach, a suitable electrical excitation pulse is generated and propagated along a transmission line toward a test device. In the picosecond domain, laser driven photoconductive switches provide a unique method of generating electrical transients. Several materials were studied for generating short electrical pulses using photoconductive switches. The various semiconductive materials tested for photoconductive switching, and the electro-optic measurement technique used to characterize the material performance are described.

Jackson, Todd A.↗

NASA NTRS1991

Development of silicon carbide semiconductor devices for high temperature applications

The semiconducting properties of electronic grade silicon carbide crystals, such as wide energy bandgap, make it particularly attractive for high temperature applications. Applications for high temperature electronic devices include instrumentation for engines under development, engine control and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Discrete prototype SiC devices were fabricated and tested at elevated temperatures. Grown p-n junction diodes demonstrated very good rectification characteristics at 870 K. A depletion-mode metal-oxide-semiconductor field-effect transistor was also successfully fabricated and tested at 770 K. While optimization of SiC fabrication processes remain, it is believed that SiC is an enabling high temperature electronic technology.

Matus, Lawrence G.↗

NASA NTRS1991

Subpicosecond time-resolved studies of coherent phonon oscillations in thin-film YBa2Cu3O(6+x) (x less than 0.4)

The results are reported of the first time-resolved observation of impulsively generated coherent optical phonon oscillations in the semiconducting cuprate compound YBa2Cu3O(6+x ) (x less than 0.4). The oscillations, which were probed through time-resolved transmissivity modulation, had a period of 237 fsec at room temperature, corresponding to a Raman active mode at A(1g) symmetry at 142/cm. No oscillations were observed in the superconducting form of Y-Ba-Cu-O either above or below Tc. The amplitude, frequency, and linewidth of this mode were measured over a temperature range from about 7 K to room temperature.

Chwalek, J. M.↗

NASA NTRS1991

A charging study of the ACTS satellite using NASCAP

The results of a charging study conducted with the NASA Charging Analyzer Program (NASCAP) using a model of the Advanced Communications Technology Satellite (ACTS) are presented. The electrostatic discharge mechanisms are described including the field and potential threshold values that were monitored during the NASCAP simulation. Particular attention is given to the charging behavior of the ACTS inclined antennas. The data obtained indicate that the possibility of a discharge occurring in the immediate vicinity of the antennas is minimal when the semiconducting paint layer on the antenna's front surface has sufficient surface conductivity. It is shown that the metallized multilayer insulating blanket ACTS design provides good electrostatic discharge control.

Herr, Joel L.↗

NASA NTRS1992

Mass-Transport Properties In Growth Of Crystals From Vapors

Brief report summarizes results of experimental and theoretical studies of mass-transport properties of GeSe/Gel4 and Hg0.8Cd0.2Te systems in connection with growth of crystals in closed ampoules. Primary emphasis in studies was on thermochemical analyses, on development of mathematical models to predict diffusion-limited mass transport, and on comparison of theoretically predicted with experimental fluxes. Results applied to design, preparation, performance, and analysis of crystal-growth experiments of semiconducting materials on Earth and in outer space. Model extended to predict mass flux and overall composition of transport products of Hg0.8Cd0.2Te transport system.

Wiedemeier, H.↗

NASA NTRS1991

Commercial applications of new photovoltaic technologies

The National Renewable Energy Laboratory (NREL) has directed and managed photovoltaic (PV) research and development (R&D) activities for the Department of Energy for more than 13 years. The NREL budget for these activities is almost $33 million for FY 1991. With the world's increasing concern for the environment and the United States' renewed apprehension over secure and adequate energy supplies, the use of semiconducting materials for the direct conversion of sunlight to electricity - photovoltaics - is an excellent example of government-supported high technology ready for further development by U.S. companies. Some new PV technologies and their research progress, some commercial applications of PV, and NREL's technology transfer activities for helping U.S. industry in its efforts to bring new products or services to the marketplace are described.

Mcconnell, R.↗

NASA NTRS1992

Electronic energy gap of molecular hydrogen from electrical conductivity measurements at high shock pressures

Electrical conductivities were measured for liquid D2 and H2 shock compressed to pressures of 10-20 GPa (100-200 kbar), molar volumes near 8 cu cm/mol, and calculated temperatures of 2900-4600 K. The semiconducting energy gap derived from the conductivities is 12 eV, in good agreement with recent quasi-particle calculations and with oscillator frequencies measured in diamond-anvil cells.

Nellis, W. J.↗

NASA NTRS1993

Processible Polyazomethines

Processibility enhanced by incorporating trifluoromethylbenzene units into molecules. Results of two unexpected properties: high solubility in common organic solvents and lack of crystallinity. Properties coupled with ability of this class of polymers to undergo exchange reactions at elevated temperatures allow these materials to moderate their molecular weights during processing, which affects resulting mechanical properties after processing. Fluorinated polyazomethines form amorphous films that have excellent mechanical properties. Used in moisture-free environments as electronic semiconducting films and adhesives, and as matrix resins for advanced structural composites.

Bryant, Robert G.↗

NASA NTRS1992

A survey and analysis of commercially available hydrogen sensors

The performance requirements for hydrogen detection in aerospace applications often exceed those of more traditional applications. In order to ascertain the applicability of existing hydrogen sensors to aerospace applications, a survey was conducted of commercially available point-contact hydrogen sensors, and their operation was analyzed. The operation of the majority of commercial hydrogen sensors falls into four main categories: catalytic combustion, electrochemical, semiconducting oxide sensors, and thermal conductivity detectors. The physical mechanism involved in hydrogen detection for each main category is discussed in detail. From an understanding of the detection mechanism, each category of sensor is evaluated for use in a variety of space and propulsion environments. In order to meet the needs of aerospace applications, the development of point-contact hydrogen sensors that are based on concepts beyond those used in commercial sensors is necessary.

Hunter, Gary W.↗

NASA NTRS1993

Film Fabrication Technologies at NREL

The National Renewable Energy Laboratory (NREL) has extensive capabilities for fabricating a variety of high-technology films. Much of the in-house work in NREL's large photovoltaics (PV) program involves the fabrication of multiple thin-film semiconducting layers constituting a thin-film PV device. NREL's smaller program in superconductivity focuses on the fabrication of superconducting films on long, flexible tape substrates. This paper focuses on four of NREL's in-house research groups and their film fabrication techniques, developed for a variety of elements, alloys, and compounds to be deposited on a variety of substrates. As is the case for many national laboratories, NREL's technology transfer efforts are focusing on Cooperative Research and Development Agreements (CRADA's) between NREL researchers and private industry researchers.

Mcconnell, Robert D.↗

NASA NTRS1992

Effect of crystal orientation on conductivity and electron mobility in single-crystal alumina

The electrical conductivity of high-purity, single-crystal alumina is determined parallel to and perpendicular to the c-axis. The mean conductivity of four samples of each orientation is a factor 3.3 higher parallel to the c-axis than perpendicular to it. The conductivity as a function of temperature is attributed to extrinsic electron conduction at temperatures from 400 to 900 C, and intrinsic semiconduction at temperatures from 900 to 1300 C. In the high-temperature regime, the slope on all eight specimens is 4.7 +/- 0.1 eV. Hence, the thermal bandgap at O K is 9.4 +/- 0.2 eV.

Will, Fritz G.↗

NASA NTRS1992

Phase diagram and electrical behavior of silicon-rich iridium silicide compounds

The iridium-silicon phase diagram on the silicon-rich side was investigated by means of X-ray powder diffraction, density, differential thermal analysis, metalography, microprobe analysis, and electrical resistivity. Attempts were made to prepare eight previously reported silicon-rich iridium silicide compounds by arc melting and Bridgman-like growth. However, microprobe analysis identified only four distinct compositions: IrSi, Ir3Si4, Ir3Si5 and IrSi sub about 3. The existence of Ir4Si5 could not be confirmed in this study, even though the crystal structure has been previously reported. Differential thermal analysis (DTA) in conjunction with X-ray powder diffraction confirm polymorphism in IrSi sub about 3, determined to have orthorhombic and monoclinic unit cells in the high and low temperature forms. A eutectic composition alloy of 83 +/- 1 atomic percent silicon was observed between IrSi sub about 3 and silicon. Ir3Si4 exhibits distinct metallic behavior while Ir3Si5 is semiconducting. Both and IrSi and IrSi sub about 3 exhibit nearly temperature independent electrical resistivities on the order of 5-10 x 10 exp -6 ohms-m.

Allevato, C. E.↗

NASA NTRS1992

X-ray photoelectron spectroscopy characterization of a nonsuperconducting Y-Ba-Cu-O superconductor-normal-metal-superconductor barrier material

A film of a novel nonsuperconducting Y-Ba-Cu-O (YBCO) barrier material was grown using conditions similar to those reported by Agostinelli et al. (1991) for forming a cubic semiconducting (c-YBCO) phase, and the material was characterized using X-ray photoelectron spectroscopy (XPS). A comparison of the XPS spectra of this material to those obtained from the orthorhombic and tetragonal phases of YBCO (o-YBCO and t-YBCO, respectively) showed that the barrier material had spectral characteristics different from those of o-YBCO and t-YBCO, particularly in the O 1s region. Features associated with the Cu-O chain and surface-reconstructed Cu-O planes were absent, consistent with expectations for the simple perovskite crystal structure of c-YBCO proposed by Agostinelli et al.

Vasquez, R. P.↗

NASA NTRS1994

Cubic GaS: A Surface Passivator For GaAs

Thin films of cubic form of gallium sulfide (GaS) formed on surfaces of gallium arsenide (GaAs) substrates via metal/organic chemical vapor deposition (MOCVD). Deposited cubic GaS, crystalline lattice matched to substrate GaAs, neutralizes electrically active defects on surfaces of both n-doped and p-doped GaAs. Enabling important GaAs-based semiconducting materials to serve as substrates for metal/insulator/semiconductor (MIS) capacitors. Cubic GaS enables fabrication of ZnSe-based blue lasers and light-emitting diodes. Because GaS is optically transparent, deposited to form window layers for such optoelectronic devices as light-emitting diodes, solar optical cells, and semiconductor lasers. Its transparency makes it useful as interconnection material in optoelectronic integrated circuits. Also useful in peeled-film technology because selectively etched from GaAs.

Hepp, Aloysius F.↗

NASA NTRS1993

Crystal growth of ZnSe and related ternary compound semiconductors by physical vapor transport

The materials to be investigated are ZnSe and related ternary semiconducting alloys (e.g., ZnS(x)Se(1-x), ZnTe(x)Se(1-x), and Zn(1-x)Cd(x)Se). These materials are useful for opto-electronic applications such as high efficient light emitting diodes and low power threshold and high temperature lasers in the blue-green region of the visible spectrum. The recent demonstration of its optical bistable properties also makes ZnSe a possible candidate material for digital optical computers. The investigation consists of an extensive ground-based study followed by flight experimentation, and involves both experimental and theoretical work. The objectives of the ground-based work are to establish the characteristics of the crystals grown on Earth as a basis for subsequent comparative evaluations of the crystals grown in a low gravity environment and to obtain the experimental data and perform the analyses required to define the optimum parameters for the flight experiments. During the six months of the Preliminary Definition Phase, the research efforts were concentrated on the binary compound ZnSe - the purification of starting materials of Se by zone refining, the synthesis of ZnSe starting materials, the heat treatments of the starting materials, the vapor transport rate measurements, the vapor partial pressure measurements of ZnSe, the crystal growth of ZnSe by physical vapor transport, and various characterization on the grown ZnSe crystals.

Su, Ching-Hua↗

NASA NTRS1993

Preliminary results from the CONCAP-2-01 and EIOM-3 experiments on STS-46

CONCAP-2-01 (complex autonomous payload, first flight) was the maiden flight of 'CONCAP-2,' a secondary payload, utilizing the get-away special (GAS) carrier system, sponsored by the Consortium for Materials Development in Space (CMDS) at the University of Alabama in Huntsville (UAH). A host of materials such as high-T(sub c) superconductor samples, metal films, polymers, carbons, and semiconducting materials were exposed to a low earth orbit (LEO) environment. We have also measured on orbit the changes in the electrical resistance of some of the high-T(sub c) materials plus carbon and silver dosimeters exposed to the space environment. The preliminary results of this experiment are compared with those from EOIM-3, both of which flew on STS-46.

Gregory, John C.↗

NASA NTRS1995

A final look at LDEF electro-optic systems components

Postrecovery characteristics of LDEF electro-optic components from the GTRI tray are compared with their prelaunch characteristics and with the characteristics of similar components from related experiments. Components considered here include lasers, light-emitting diodes, semiconducting radiation detectors and arrays, optical substrates, filters, and mirrors, and specialized coatings. Our understanding of the physical effects resulting from low earth orbit are described, and guidelines and recommendations for component and materials choices are presented.

Blue, M. D.↗