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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Carrier recombination dynamics and temperature dependent optical properties of InAs–GaSb heterostructures

Heterostructures with two dissimilar materials could offer unprecedented properties if one can carefully synthesize these heterostructures with atomically smooth interfaces and reduced number of recombination centers. InAs/GaSb-based heterostructures have technological importance for long wavelength infrared photodetectors if one can synthesize these materials with high-optical quality and high-carrier lifetime. In this work, the InAs/GaSb heterostructures with a different number of heterointerfaces and growth conditions were grown by solid source molecular beam epitaxy using valved cracker sources for both arsenic and antimony. Precise control of growth parameters and shutter sequences enabled abrupt InAs/GaSb heterointerfaces, as supported by a high-resolution transmission electron microscopic study. The temperature and power-dependent optical properties by photoluminescence (PL) spectroscopic analysis of InAs/GaSb heterostructures with 4 and 28 heterointerfaces displayed donor to the acceptor and the exciton bound to complex defects (V Ga Ga Sb ) 0 . Since the optical transition in PL measurements serves to determine the quality of the material, and the observed excitonic transitions from these InAs/GaSb heterostructures is an indication of high-quality materials. The high-carrier lifetimes of 139 ns to 185 ns from InAs/GaSb heterostructures were measured using microwave photoconductivity decay (μ-PCD) technique at room temperature. The observed increase in carrier lifetime is due to the decreasing number of Ga-related carrier recombination centers or defect complexes. This is further supported by the PL spectroscopic study. In addition, the carrier lifetime with different injection levels is supported by Shockley–Read–Hall recombination. We report these InAs/GaSb heterostructures with high-optical quality and high-carrier lifetimes would offer a path for the development of high-performance infrared photodetectors.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Power conversion in SnS photocathodes made by electrochemical growth is limited by recombination at (002) buried facets

Herzenbergite α-SnS is a promising p-type semiconductor for photovoltaic and solar fuel applications, but current devices are plagued by substantial photovoltage losses. Here we use vibrating Kelvin probe surface photovoltage for the first time to study the recombination losses in microcrystalline SnS photoelectrodes. α-SnS films of varied crystal orientation, size, and shape are obtained by electrochemical growth from aqueous tin( II ) chloride and sodium thiosulfate solutions near room temperature. After application of a CdS passivation layer, the films function as photocathodes for the methylviologen reduction reaction. Photoelectrochemical and surface photovoltage measurements reveal that the performance of these devices is sensitively controlled by mainly the SnS crystal orientation and to a lesser extent by the grain size. For example, the highest charge recombination rates of 8.97 × 10 14 s −1 cm −2 and lowest photocurrent (0.73 mA cm −2 ) and lowest photovoltage (0.12 V) occur for SnS films containing 500 nm crystals with irregular shapes and SnS lattices tilted away from the (001) orientation. On the other hand, the best performance (1.62 mA cm −2 , 0.16 V, 3.32 × 10 12 s −1 cm −2 ) is seen for 1100 nm fully (001) oriented SnS nanoplates. Furthermore, these findings agree with improved charge carrier mobility in the 001 direction and they also show that charge recombination in SnS films occurs mainly at dangling Sn–S bonds at buried (002) facets. Such buried interfaces need to be suppressed for optimized solar energy conversion with SnS.

Najaf, Zainab [University of California, Davis, CA↗
DOE OSTI2021

Volumetric recombination in EMC3-EIRENE: Implementation and first application to the pre-fusion power operation phase in ITER

An upgrade to the 3D plasma boundary model EMC3-EIRENE for detached divertor plasmas is introduced and evaluated. Stabilization of the iterative approximation of a self-consistent plasma–neutral gas solution is required at low divertor plasma temperatures, and this has been achieved by linearization of the energy loss term associated with the electron–neutral gas interaction. An implicit method for volumetric recombination has been implemented, which improves agreement with SOLPS-ITER results for the pre-fusion power operation phase in ITER. Resonant magnetic perturbations for control of edge localized modes are found to result in a partially detached divertor plasma with a significantly broader reduction of particle loads in the traditional strike zone, which is attributed to volumetric recombination. The additional non-axisymmetric far scrape-off layer strike points, on the other hand, remain attached at relatively high temperature so that volumetric recombination is not effective there.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Iodine Vacancies do not Cause Nonradiative Recombination in Halide Perovskites

The iodine vacancy (V I ) has frequently been discussed as a strong nonradiative recombination center in halide perovskites. This proposition was mainly based on the presence of charge-state transition levels in the band gap, as found in early first-principles calculations. In this work, we perform accurate hybrid-density-functional calculations for V I in CsPbI 3 , CsSnI 3 , and CsGeI 3 and find that V I does not have any transition levels in the band gap in CsPbI 3 , in contrast to the results from calculations based on semilocal functionals. The iodine vacancy V I does introduce levels in the band gap in CsSnI 3 and CsGeI 3 , but our explicitly computed nonradiative capture coefficients demonstrate that V I has a negligible impact on nonradiative recombination. Our study corrects a misunderstanding of the role of V I in the iodide-based perovskites, and shifts the focus toward identifying and mitigating actual recombination centers in order to further improve the optoelectronic performance.

14 SOLAR ENERGY↗
DOE OSTI2020

Low-frequency lattice phonons in halide perovskites explain high defect tolerance toward electron-hole recombination

Low-cost solution-based synthesis of metal halide perovskites (MHPs) invariably introduces defects in the system, which could form Shockley-Read-Hall (SRH) electron-hole recombination centers detrimental to solar conversion efficiency. Here, we investigate the nonradiative recombination processes due to native point defects in methylammonium lead halide (MAPbI 3 ) perovskites using ab initio nonadiabatic molecular dynamics within surface-hopping framework. Regardless of whether the defects introduce a shallow or deep band state, we find that charge recombination in MAPbI 3 is not enhanced, contrary to predictions from SRH theory. We demonstrate that this strong tolerance against defects, and hence the breakdown of SRH, arises because the photogenerated carriers are only coupled with low-frequency phonons and electron and hole states overlap weakly. Both factors appreciably decrease the nonadiabatic coupling. We argue that the soft nature of the inorganic lattice with small bulk modulus is key for defect tolerance, and hence, the findings are general to other MHPs.

Science & Technology - Other Topics↗
DOE OSTI2020

Spatially resolved characterization of optical and recombination losses for different industrial silicon solar cell architectures

In this work, spatially resolved characterization methods are used to identify loss mechanisms for common p -type silicon solar cell architectures, including multicrystalline aluminum back surface field (Al-BSF), monocrystalline Al-BSF, monocrystalline passivated emitter and rear cells (PERC), and bifacial monocrystalline PERC. The characterization methods used in this work include suns-V OC , photoluminescence imaging, and spatially resolved external quantum efficiency and reflectance measurements. The optical and recombination losses are driven by the material properties, cell processing conditions, and device architecture. These losses are quantified and categorized in terms of underlying mechanisms (e.g., front reflectance, escape reflectance, front recombination, and parasitic optical absorption and recombination in the bulk and rear). The ability to create images of these loss parameters can be used to gain more insight into the materials and manufacturing processes used to produce solar cells, and examples are given in this work to illustrate how these images can help reveal the origin of defects.

14 SOLAR ENERGY↗
DOE OSTI2021

Recombinant production of a functional SARS-CoV-2 spike receptor binding domain in the green algae Chlamydomonas reinhardtii

Recombinant production of viral proteins can be used to produce vaccine antigens or reagents to identify antibodies in patient serum. Minimally, these proteins must be correctly folded and have appropriate post-translation modifications. Here we report the production of the SARS-CoV-2 spike protein Receptor Binding Domain (RBD) in the green algae Chlamydomonas . RBD fused to a fluorescent reporter protein accumulates as an intact protein when targeted for ER-Golgi retention or secreted from the cell, while a chloroplast localized version is truncated. The ER-retained RBD fusion protein was able to bind the human ACE2 receptor, the host target of SARS-CoV-2, and was specifically out-competed by mammalian cell-produced recombinant RBD, suggesting that the algae produced proteins are sufficiently post-translationally modified to act as authentic SARS-CoV-2 antigens. Because algae can be grown at large scale very inexpensively, this recombinant protein may be a low cost alternative to other expression platforms.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2021

Influences of the transverse motions of the particles to the recombination rate of a co-propagating electron-ion system

For a system with the ion beam co-propagating with the electron beam, such as a traditional electron cooler or a Coherent electron Cooler (CeC), the recombination rate is an important observable for matching the energy of the electrons with the ions. In this work, we have developed the analytical expressions to investigate how the recombination rate depends on the energy difference of the two beams, with the influences from the transverse motions of the particles being considered. The analytical results are then used to analyze the measured recombination data collected during the CeC experiment in run 21.

43 PARTICLE ACCELERATORS↗
DOE OSTI2025

Langevin Dynamics modeling of gas-phase ion-ion recombination (Final Technical Report)

A self-consistent trajectory simulation approach to model MN reactions (Fig. 1) which incorporates the probability of electron transfer as a Monte Carlo operator (Fig. 2) was developed and published as Liu et al. J. Chem. Phys. 159, 114111 (2023). The electron transfer probability p ET estimated using the two-state Landau-Zener (LZ) theory was incorporated into classical trajectory simulations to elicit predictions of MN reaction cross-section σ (vacuum) or rate constant β (finite pressure). Electronic structure calculations with multireference configuration interaction (MRCI) and large correlation consistent basis sets were used to derive inputs to the LZ theory. The key advance of our trajectory simulation approach is the incorporation of electron transfer probability and the inclusion of the effect of ion-neutral interactions on MN using a Langevin representation of the effect of neutral gas on ions. For H + – H - and Li + – H(D) - pairs, our approach quantitatively agrees with measured speed-dependent cross-sections for up to ~10 5 m/s. For the ion pair Ne + – Cl - , our predictions of the MN rate constant at ~1 torr are a factor of ~2 – 3 higher than the experimentally measured value. Similarly, for Xe + – F - in the pressure range of ~20000 – 80000 Pa, our predictions of the MN rate constant are ~20% lower but are in excellent qualitative agreement with experimental data. The paradigm of using trajectory simulations to self-consistently model MN reactions is the basis for inclusion of additional non-classical, and static magnetic and electric field effects. Subsequent work, published as Roy et al. focused on modeling recombination rate constant for three ion pairs (rare gas Ar + cation and halide anions): Ar + – Cl - , Ar + – Br - , Ar + – I - , 2) considering spin-orbit couplings in the electronic structure calculations to obtain high-fidelity estimates of the electron transfer probability and incorporated within the classical trajectory simulations to elicit predictions. In addition to calculations of ion-ion recombination rate constants, a classical trajectory simulation technique (published as Roy et al. J. Chem. Phys. 162(9), 094104 (2023)) that uses quaternions to represent orientation of non-spherical particles (ions or aerosol particles) was developed to simulate the recombination of diatomic or more generally, polyatomic molecules. Finally, several other ion pairs such as Ne + – Cl - , Kr + – Cl - , were explored using the developed semi-classical trajectory simulations to understand various challenges in tackling electronic structure calculations. Using empirical approaches to parameterize the electron transfer radius, trajectory simulations were also used to probe the effect of ion number density on MN rate constant.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1972

The effect of secondary autoionization on dielectronic recombination.

Demonstration that, during the process of dielectronic recombination, the energy of a recombined ion after a resonance capture and subsequent stabilization may still be higher than the first ionization limit. If that happens, a secondary autoionization can take place and reduce the recombination coefficient. The importance of this effect is considered for iron ions Fe(9+) to Fe(13+).

Blaha, M.↗
NASA NTRS1972

Detection of interstellar recombination lines from emitters of intermediate mass.

The 18-cm microwave spectra of Orion B and W3A show evidence of an emission feature to the high-frequency side of the carbon recombination line. Observations at different frequencies establish that this feature results from electronic recombination. In addition, theoretical considerations, results of 21-cm observations, and computer-simulated spectra suggest that the new feature originates in a predominantly neutral hydrogen region and can be explained by a superposition of recombination lines from any or all of the following elements: Mg-24, Si-28, S-32, and Fe-56.

Chaisson, E. J.↗
NASA NTRS1972

Lifetime and quenching of CO /a super 3 pi/ produced by recombination of CO2 ions in a helium afterglow.

Demonstration that rapid dissociative recombination of CO2(+) in a flowing, helium afterglow is an efficient source of CO in the a super 3 pi metastable state. Ions produced by mixing CO2 with He(2 super 3 S) recombine to produce a CO metastable afterglow with a number density as great as 10 to the 9th per sq cm. Monitoring of the (a super 3 pi-X super 1 sigma) Cameron transition in CO was used to study the lifetime and quenching of CO (a super 3 pi) by CO2, N2, NO, and He. Recombination of CO2(+) also produces CO in the d super 3 delta and a' super 3 sigma states.

Wauchop, T. S.↗
NASA NTRS1973

Dissociative recombination of CH+ ions.

In recent studies of the formation of molecules in interstellar clouds, Solomon and Klemperer (1972) and Frisch (1972) were able to fit the observed ratios of CH+ and CH densities only with the assumption that the rate of dissociative recombination is extremely small. It is known that the rate for most diatomic molecules is relatively large, with the exception of H2+ and He2+ for which it is anomalously small. The present work explores the possibility that CH+ also has a low recombination rate. However, preliminary calculations yield a large rate of the dissociative recombination process, seemingly necessitating considerable revision of some recent models of interstellar clouds.

Bardsley, J. N.↗
NASA NTRS1976

Observations of heavy-element recombination lines in the Rho Ophiuchi dark cloud at 13 centimeters wavelength

High-sensitivity observations at the carbon 140-alpha and 141-alpha recombination-line frequencies in the direction of the Rho Oph dust cloud show the presence of recombination lines of carbon and sulfur, but not of other heavy elements. These results require that the elements Si, Fe, and Mg are depleted by factors greater than 15, 10, and 2, respectively, most likely into interstellar grains, whereas sulfur is undepleted. They also require that only approximately one-sixth of the carbon is present in the gas phase in the cloud. From the observed size of the C II region together with the observed carbon depletion, it is inferred that the density in the carbon-line-emitting region is 25,000 per cu cm and that the size of the S II region is significantly larger than that of the C II region. The agreement between the widths of the recombination lines (which arise in a small region of the cloud) and those of the more widely distributed molecular species suggests that the lines in this cloud are broadened by microturbulence on a scale of much less than 0.1 pc.

Knapp, G. R.↗
NASA NTRS1976

Determination of surface recombination velocity in heavily doped silicon

A method was developed and successfully tested for the determination of the effective surface recombination velocity of silicon layers doped by diffusion of phosphorus to a level of 10 to the 19th to 10 to the 21st per cu cm. The effective recombination velocity was obtained from the dependence of the electron-beam-induced current on the penetration of the electron beam of a scanning electron microscope. A special silicon diode was constructed which permitted the collection at the p-n junction of the carriers excited by the electron beam. This diode also permitted the study of the effects of surface preparation on the effective surface recombination velocity.

Watanabe, M.↗
NASA NTRS1977

Recombination lasing in a magnetoplasmadynamic arcjet

The plasmadynamic recombination laser concept is verified experimentally in a high power quasi-steady MPD arcjet operating at 4 kA and 12 g/sec of argon. Measurements of the spatial variation of electron temperature, electron density, and population densities in the arc exhaust flow confirm that inverted populations of the 4p to 4s Ar II transitions are established by collisional-radiative recombination of the Ar III ion. Using an optical cavity aligned transversely to the flow, recombination lasing of four such transitions, 5145, 4880, 4764 and 4727 A, is observed spectro-photographically and photoelectrically over the entire 1-msec discharge.

Campbell, E. M.↗
NASA NTRS1977

Recombination lasing in a magnetoplasmadynamic arcjet

The plasmadynamic recombination laser concept is verified experimentally in a high-power quasisteady MPD arcjet operating at 4 kA and 12 g/sec of argon. Measurements of the spatial variation of electron temperature, electron density, and population densities in the arc exhaust flow confirm that inverted populations of the 4p to 4s ArII transitions are established by collisional-radiative recombination of the ArIII ion. Using an optical cavity aligned transversely to the flow, recombination lasing of four such transitions, 5145, 4880, 4764, and 4727 A, is observed spectrophotographically and photoelectrically over the entire 1-msec discharge.

Campbell, E. M.↗
NASA NTRS1977

Determination of minority-carrier lifetime and surface recombination velocity with high spacial resolution

Quantitative analysis of the electron beam induced current in conjunction with high-resolution scanning makes it possible to evaluate the minority-carrier lifetime three dimensionally in the bulk and the surface recombination velocity two dimensionally, with a high spacial resolution. The analysis is based on the concept of the effective excitation strength of the carriers which takes into consideration all possible recombination sources. Two-dimensional mapping of the surface recombination velocity of phosphorus-diffused silicon diodes is presented as well as a three-dimensional mapping of the changes in the minority-carrier lifetime in ion-implanted silicon.

Watanabe, M.↗