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At least 181 records · Page 10

Long-Lifetime Laser Materials For Effective Diode Pumping

Long quantum lifetimes reduce number of diodes required to pump. Pumping by laser diodes demonstrated with such common Nd laser materials as neodymium:yttrium aluminum garnet (Nd:YAG) and Nd:YLiF4, but such materials as Nd:LaF3, Nd:NaF.9YF3, and possibly Nd:YF3 more useful because of long lifetimes of their upper laser energy levels. Cost effectiveness primary advantage of solid-state laser materials having longer upper-laser-level lifetimes. Because cost of diodes outweighs cost of laser material by perhaps two orders of magnitude, cost reduced significantly.

Barnes, Norman P.↗

Hydrogen formation in the photolysis of propyne at 1236 A.

A Kr resonance lamp was used in the investigations. All experiments were performed at 25 C and 0.2 torr of propyne. Between 5% and 25% of the propyne was decomposed in any one experiment. It was found that the addition of 25% C2D4 had no effect on the quantum yield of molecular hydrogen. This suggests that hydrogen formation in the photolysis of propyne at 1236 A occurs exclusively via a molecular process. Pressure effects on the distribution of isotopic hydrogen formed in the photolysis were also investigated.

Payne, W. A.↗

2D Quantum Transport Modeling in Nanoscale MOSFETs

With the onset of quantum confinement in the inversion layer in nanoscale MOSFETs, behavior of the resonant level inevitably determines all device characteristics. While most classical device simulators take quantization into account in some simplified manner, the important details of electrostatics are missing. Our work addresses this shortcoming and provides: (a) a framework to quantitatively explore device physics issues such as the source-drain and gate leakage currents, DIBL, and threshold voltage shift due to quantization, and b) a means of benchmarking quantum corrections to semiclassical models (such as density- gradient and quantum-corrected MEDICI). We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions, oxide tunneling and phase-breaking scattering are treated on equal footing. Electrons in the ellipsoids of the conduction band are treated within the anisotropic effective mass approximation. Quantum simulations are focused on MIT 25, 50 and 90 nm "well- tempered" MOSFETs and compared to classical and quantum corrected models. The important feature of quantum model is smaller slope of Id-Vg curve and consequently higher threshold voltage. These results are quantitatively consistent with I D Schroedinger-Poisson calculations. The effect of gate length on gate-oxide leakage and sub-threshold current has been studied. The shorter gate length device has an order of magnitude smaller current at zero gate bias than the longer gate length device without a significant trade-off in on-current. This should be a device design consideration.

Svizhenko, Alexei↗

Doping-Induced Interband Gain in InAs/AlSb Quantum Wells

A paper describes a computational study of effects of doping in a quantum well (QW) comprising a 10-nm-thick layer of InAs sandwiched between two 21-nm-thick AlSb layers. Heretofore, InAs/AlSb QWs have not been useful as interband gain devices because they have type-II energy-band-edge alignment, which causes spatial separation of electrons and holes, thereby leading to weak interband dipole matrix elements. In the doping schemes studied, an interior sublayer of each AlSb layer was doped at various total areal densities up to 5 X 10(exp 12) / square cm. It was found that (1) proper doping converts the InAs layer from a barrier to a well for holes, thereby converting the heterostructure from type II to type I; (2) the resultant dipole matrix elements and interband gains are comparable to those of typical type-I heterostructures; and (3) dipole moments and optical gain increase with the doping level. Optical gains in the transverse magnetic mode can be almost ten times those of other semiconductor material systems in devices used to generate medium-wavelength infrared (MWIR) radiation. Hence, doped InAs/AlSb QWs could be the basis of an alternative material system for devices to generate MWIR radiation.

Kolokolov, K. I.↗

Effects of dislocations in Stranski-Krastanow quantum dots

The interrelations between structural and optical properties in Strasnki-Krastanow (S-K) quantum dots are examined trough different experiments that explore III-V quantum dots (QD) formation.

nanotechnology ordered structure photoiluminescenc↗

A Quantum Algorithm to Simulate Open Quantum Systems

Given the advent of quantum algorithms for a wide array of problems in linear algebra and machine learning, it is important to develop general methods for the simulation of arbitrary (ie non-unitary) operators on quantum hardware. In this talk, we present a novel quantum algorithm based on the quantum singular value transformation (QSVT) to apply an arbitrary operator K to some input state and subsequently estimate the expectation value of some observable. Our construction then immediately yields a route to estimating observables of states undergoing open quantum dynamics, whose effect is captured by a set of non-unitary Kraus operators. Our algorithm succeeds deterministically given the Sz-Nagy dilation, and we provide details on the algorithm's query and gate complexity, numerical verification, and comparisons with prior methods.

Quantum computing↗

Reaction of NH2 with NO and O2

Experiments were performed on the photooxidation of NH3 at room temperature and the photolysis of NH3-NO mixtures in order to determine the reaction paths of NH2 with O2. NH3 was photolyzed (NH3 + E yields NH2 + H) in the presence of O2 above 0.6 torr at 213.9 nm and 25 C, producing N2 and N2O. Only N2 and N2O were produced with any significant quantum yield, and their quantum yield was invariant with reaction conditions, which imposes a great number of constraints reducing the number of possible reactions greatly. It is argued that the N2 must be produced from the NH2O2 radical which was produced by the reaction between NH2 and O2. Subsequent reactions leading to N2 and N2O are speculative. In the photolysis of NH3 in the presence of NO and NO-O2 mixtures, the products identified were N2, H2, and N2O. Without the presence of O2, the reaction scheme after photolysis is (2) NH2 + NO yields N2 + H2O, (3) H + NO + M yields HNO + M, (4) H + HNO yields H2 + NO, and (5) 2HNO yields N2O + H2O. The average value for the ratio k3 times the square root of k5 divided by k4 was computed to be (1.6 plus or minus 0.6) times 10 to the minus 28th cm to the exponent 9/2 per square root sec. In addition, the presence of 113 mtorr of O2 had no effect on the quantum yields of N2 or H2, so it appears that it does not deactivate electronically excited NH3.

Jayanty, R. K. M.↗

Many-Body Effects and Lineshape of Intersubband Transitions in Semiconductor Quantum Wells

Intersubband Transition (ISBT) infrared (IR) absorption and PL in InAs/AlSb were studied for narrow Quantum Wells (QWs). A large redshift was observed (7-10 meV) as temperature increased. A comprehensive many-body theory was developed for ISBTs including contributions of c-c and c-phonon scatterings. Many-body effects were studied systematically for ISBTs. Redshift and linewidth dependence on temperature, as well as spectral features were well explained by theory.

Ning, Cun-Zheng↗

Semiconductor superlattice photodetectors

Technical progress made in the study of superlattice photoconductors is summarized and papers submitted for publication are listed. Since the quantum-well regions may contain several subbands, each of which may be occupied by electrons depending on the doping concentrations, it is important to include the multi-subbands in calculating the impact ionization rate. The electrons occupying the higher subbands require a smaller amount of energy to get out of the quantum well; thus, those higher level subband electrons contribute significantly to the impact ionization rate. The results of the subbands have been calculated. Results concerning the nonparabolicity effect of the band structure, the effect of the quantum-well size, and the effect of the band-edge discontinuity and doping are also summarized.

Chuang, S. L.↗

Eikonal approximation for charge transfer from a multielectron atom to fast projectiles

The eikonal approach developed previously for calculating electron-capture cross sections for bare projectiles colliding with hydrogenic targets is extended here to allow for multielectron targets. Both the impact and wave pictures are employed and their equivalence is discussed. As a first approximation, each atomic orbital is specified by the three hydrogenic quantum numbers, an effective nuclear charge Z sub t, and an energy eigenvalue in the impact picture, or ionization potential in the wave picture. The Z sub t prime appearing in the eikonal phase factor is left undetermined because of incomplete information on the many-body target. However, analytic expressions are derived for the theoretical cross sections, and numerical values are calculated for simple choices of Z sub t prime. Those results are compared with existing experimental data for C, Ne, Ar, N2, O2, and He targets.

Ho, T. S.↗

Active Q switching in a GaAs/AlGaAs multiquantum well laser with an intracavity monolithic loss modulator

Active Q switching in a GaAs/AlGaAs multiquantum well laser with an intracavity electroabsorption monolithic loss modulator is demonstrated. In this device, an efficient loss modulation is achieved through the quantum confined Stark effect in a modulator section and the enhanced carrier induced band shrinkage effect in an optical amplifier section. It is found that a picosecond pulse as narrow as 18.6 ps full width at half-maximum is generated and a high repetition rate of more than 3 GHz is obtained.

Arakawa, Y.↗

High-speed dual-wavelength demultiplexing and detection in a monolithic superlattice p-i-n waveguide detector array

High-speed (1 Gbit/x) dual-wavelength demultiplexing and detection in a monolithic linear array of superlattice p-i-n photodetectors in a waveguide configuration is demonstrated. A crosstalk attenuation of 28 dB was achieved between two digital transmission channels with an interchannel wavelength spacing of 30 nm. The device performance is a result of an enhanced electroabsorption due to the quantum-confined Stark effect in the superlattice p-i-n diodes.

Larsson, A.↗

Computed potential energy surfaces for chemical reactions

The minimum energy path for the addition of a hydrogen atom to N2 is characterized in CASSCF/CCI calculations using the (4s3p2d1f/3s2p1d) basis set, with additional single point calculations at the stationary points of the potential energy surface using the (5s4p3d2f/4s3p2d) basis set. These calculations represent the most extensive set of ab initio calculations completed to date, yielding a zero point corrected barrier for HN2 dissociation of approx. 8.5 kcal mol/1. The lifetime of the HN2 species is estimated from the calculated geometries and energetics using both conventional Transition State Theory and a method which utilizes an Eckart barrier to compute one dimensional quantum mechanical tunneling effects. It is concluded that the lifetime of the HN2 species is very short, greatly limiting its role in both termolecular recombination reactions and combustion processes.

Walch, Stephen P.↗

Performance characteristics of STIS detectors

We report quantum efficiency measurements of back-illuminated, ion-implanted, laser-annealed charge coupled devices (CCD's) in the wavelength range 13-10,000 A. The equivalent quantum efficiency (EQE = effective photons detected per incident photon) ranges from a minimum of 5 percent as 1216 A to a maximum of 87 percent at 135 A. Using a simple relationship for the charge collection efficiency of the CCD pixels as a function of depth, we present a semi-empirical model with few parameters which reproduces our measurements with a fair degree of accuracy. The advantage of this model is that is can be used to predict CCD QE performance for shallow backside implanted devices without detailed solution of a system of differential equations, as in conventional approaches, and yields a simple analytic form for the charge collection efficiency which is adequate for detector calibration purposes. Making detailed assumptions about the dopant profile, we also solve the carrier density and continuity equations in order to relate our semi-empirical model parameters to surface and bulk device properties. The latter procedure helps to better establish device processing parameters for a given level of CCD QE performance.

Stern, Robert A.↗

Distribution of photons in squeezed polymode light

The distribution functions of photons in squeezed and correlated light for one-mode and multimode cases are obtained based on the method of integrals of motion. Correlation coefficient and squeezing parameter are calculated. The possibility to generate squeezed light using nonstationary Casimir effect is discussed. Quantum parametric Josephson junction is proposed as quantum vacuum generator of electrical vibrations.

Manko, V. I.↗

Electrically-Tunable Group Delays Using Quantum Wells in a Distributed Bragg Reflector

There is a growing interest in the fabrication of semiconductor optical group delay lines for the development of phased arrays of Vertical-Cavity Surface-Emitting Lasers (VCSELs). We present a novel structure incorporating In(x)GA(1-x)As quantum wells in the GaAs quarter-wave layers of a GaAs/AlAs distributed Bragg reflector (DBR). Application of an electric field across the quantum wells leads to red shifting and peak broadening of the el-hhl exciton peak via the quantum-confined Stark effect. Resultant changes in the index of refraction thereby provide a means for altering the group delay of an incident laser pulse. We discuss the tradeoffs between the maximum amount of change in group delay versus absorption losses for such a device. We also compare a simple theoretical model to experimental results, and discuss both angle and position tuning of the BDR band edge resonance relative to the exciton absorption peak. The advantages of such monolithically grown devices for phased-array VCSEL applications will be detailed.

Nelson, Thomas R., Jr.↗

Exciton effects in the index of refraction of multiple quantum wells and superlattices

Theoretical calculations of the index of refraction of multiple quantum wells and superlattices are presented. The model incorporates both the bound and continuum exciton contributions for the gamma region transitions. In addition, the electronic band structure model has both superlattice and bulk alloy properties. The results indicate that large light-hole masses, i.e., of about 0.23, produced by band mixing effects, are required to account for the experimental data. Furthermore, it is shown that superlattice effects rapidly decrease for energies greater than the confining potential barriers. Overall, the theoretical results are in very good agreement with the experimental data and show the importance of including exciton effects in the index of refraction.

Kahen, K. B.↗