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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Hybrid Entanglement Distribution between Remote Microwave Quantum Computers Empowered by Machine Learning

Superconducting microwave circuits with Josephson junctions, the major platform for quantum computing, can only reach the full capability when connected. This requires an efficient protocol to distribute microwave entanglement. While quantum computers typically use discrete-variable (DV) methods for information encoding, the entire continuous-variable (CV) degree of freedom in electromagnetic fields must be utilized to achieve the highest entanglement distribution rate. Here, we propose a hybrid protocol to resolve the incompatibility between DV microwave quantum computers and CV quantum communications. CV microwave entanglement is distributed using optical swapping of optical-microwave entanglement pairs. To interface with DV microwave quantum computers, we further design a hybrid circuit to simultaneously convert and distill high-quality DV entanglement from noisy CV entanglement. The hybrid circuit is trained with machine-learning algorithms, ensuring high entanglement fidelity and generation rate. In conclusion, our work not only provides a practical method to realize efficient quantum links for superconducting microwave quantum computers, but also opens avenues to bridge the gap between DV and CV quantum systems.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Nonequilibrium Thermodynamics of Colloidal Gold Nanocrystals Monitored by Ultrafast Electron Diffraction and Optical Scattering Microscopy

Metal nanocrystals exhibit important optoelectronic and photocatalytic functionalities in response to light. These dynamic energy conversion processes have been commonly studied by transient optical probes to date, but an understanding of the atomistic response following photoexcitation has remained elusive. In this paper, we use femtosecond resolution electron diffraction to investigate transient lattice responses in optically excited colloidal gold nanocrystals, revealing the effects of nanocrystal size and surface ligands on the electron–phonon coupling and thermal relaxation dynamics. First, we uncover a strong size effect on the electron–phonon coupling, which arises from reduced dielectric screening at the nanocrystal surfaces and prevails independent of the optical excitation mechanism (i.e., inter- and intraband). Second, we find that surface ligands act as a tuning parameter for hot carrier cooling. Particularly, gold nanocrystals with thiol-based ligands show significantly slower carrier cooling as compared to amine-based ligands under intraband optical excitation due to electronic coupling at the nanocrystal/ligand interfaces. Finally, we spatiotemporally resolve thermal transport and heat dissipation in photoexcited nanocrystal films by combining electron diffraction with stroboscopic elastic scattering microscopy. Taken together, we resolve the distinct thermal relaxation time scales ranging from 1 ps to 100 ns associated with the multiple interfaces through which heat flows at the nanoscale. Our findings provide insights into optimization of gold nanocrystals and their thin films for photocatalysis and thermoelectric applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Enhanced Photoluminescence and Prolonged Carrier Lifetime through Laser Radiation Hardening and Self-Healing in Aged MAPbBr3 Perovskites Encapsulated in NiO Nanotubes

Organic-inorganic perovskites hold great promise as optoelectronic semiconductors for pure color light emitting and photovoltaic devices. However, challenges persist regarding their photostability and chemical stability, which limit their extensive applications. This paper investigates the laser radiation hardening and self-healing-induced properties of aged MAPbBr3 perovskites encapsulated in NiO nanotubes (MAPbBr3@NiO) using photoluminescence (PL) and fluorescence lifetime imaging (FLIM). After deliberately subjecting the MAPbBr3@ NiO to atmospheric conditions for two years, the sample remains remarkably stable. It exhibits no changes in PL wavelength during UV laser irradiation and self-healing. Furthermore, exposure to UV light at 375 nm enhances the PL of the self-healed MAPbBr3@NiO. FLIM analysis sheds light on the mechanism behind photodegradation, self-healing, and PL enhancement. The results indicate the involvement of many carrier-trapping states with low lifetime events and an increase in peak lifetime after self-healing. The formation of trapping states at the perovskite/nanotube interface is discussed and tested. This study provides new insights into the dynamics of photo-carriers during photodegradation and self-healing in organic-inorganic perovskites.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Optoelectronic and material properties of solution-processed Earth-abundant Cu 2 BaSn(S, Se) 4 films for solar cell applications

Copper barium thioselenostannate, Cu 2 BaSnS 4-x Se x (CBTSSe), absorbers employ low-toxicity and abundant metals while offering low-cost manufacturing options, controllable stoichiometry and band gap tunability (from 2 eV at x = 0 to 1.55 eV at x = 3). CBTSSe can therefore be considered a prospective candidate for maintaining or improving upon the advantages of already commercialized Cu(In,Ga)(S,Se) 2 (CIGSSe) and CdTe absorbers. Here, we focus on solution-deposited stoichiometric CBTSSe films with band gap of 1.59 eV (x ≈ 3) and explore the fundamental film properties. Temperature- and excitation-dependent photoluminescence studies reveal a dominant defect emission at ~1.5 eV and a second deep defect feature at 1.15 eV. From time-resolved terahertz measurements, we find a charge carrier (electron and hole sum) mobility of ~140 cm 2 /Vs—i.e., comparable to values in CIGSSe or Cu 2 ZnSnS 4-x Se x (CZTSSe)—as well as a two-component minority carrier lifetime. A longer-lived lifetime component (~2 ns) arises from bulk recombination. However, strong recombination at the (bare) surface leads to a ~50 ps lifetime, inferior to state-of-the-art CIGSSe or CZTSSe absorbers. This recombination issue may worsen for CBTSSe/CdS interfaces, due to a cliff-like band alignment with 0.6 eV band offset, as revealed by ultraviolet photoemission spectroscopy. A low number of charge carriers within the absorber further contributes to a high series resistance. Employing these films, we also report the highest performance achieved from solution-processed trigonal CBTSSe thin-film photovoltaic devices, with open circuit voltage, short-circuit current density, fill factor and efficiency of 470 mV, 14.3 mA/cm 2 , 43.6% and 2.9%, respectively. The physical measurements provided on the stoichiometric solution-processed CBTSSe absorber further point to critical areas for future improvement of CBTSSe and related photovoltaic cells in the quest for higher efficiency devices based on earth abundant metals.

14 SOLAR ENERGY↗
DOE OSTI2022

Spin–orbit coupling proximity effect in MoS 2 /Fe 3 GeTe 2 heterostructures

Layered two-dimensional (2D) magnet/semiconductor heterostructures combine spintronic and optoelectronic properties of constituent materials, leading to new magneto-optical and magnetoelectric phenomena such as spontaneous emission of helical light and enhanced Zeeman splitting in single photon emission. While prior focus was mostly on the magnetic proximity effect, where properties of 2D magnets are transferred to nonmagnetic 2D materials, the inverse effect of 2D semiconductors altering 2D magnets is much less understood. Here, we fabricated and studied van der Waals (vdW) heterostructures of 2D magnet Fe 3 GeTe 2 (FGT) and 2D semiconductor MoS 2 . With reflectance magnetic circular dichroism, we found that the coercive field of MoS 2 -covered FGT reduces compared with uncovered FGT, agreeing well with our first-principles calculations. With its strong spin–orbit coupling (SOC), MoS 2 effectively alters the crystal field of the adjacent FGT and its magnetic anisotropy. Furthermore, an unconventional two-step hysteresis loop emerges in MoS 2 /FGT as a result of the superposition of two regions of FGT: at the interface and away from the interface. Our experimental elucidation of the SOC proximity effect that MoS 2 exerts on FGT provides fundamental understanding for the rational development of 2D magnet/semiconductor heterostructures.

2D materials↗
DOE OSTI2025

High Mobility and Electrostatics in GeSn Quantum Wells With SiGeSn Barriers

GeSn is an emerging material with potential applications in next‐generation integrated optoelectronics and quantum information processing. While GeSn/SiGeSn quantum wells exhibit promising optical properties, their electrical transport characteristics and governing electrostatics in gated structures remain unexplored. Heterostructure field‐effect transistors are fabricated using GeSn/SiGeSn quantum wells and electronic transport properties of 2D holes are characterized. At 2 K, heterostructure field‐effect transistors with well/barrier compositions of Ge 0.945 Sn 0.055 /Si 0.03 Ge 0.93 Sn 0.04 and Ge 0.9 Sn 0.1 /Si 0.017 Ge 0.927 Sn 0.056 , show peak mobilities of 9000 and 19 000 cm 2 /Vs, respectively, the latter setting a record for the highest mobility reported for GeSn quantum wells with a Sn concentration around 6 % or greater. Remarkably, at low carrier densities, devices with a SiGeSn barrier exhibit mobilities several times higher than previously reported for GeSn quantum wells with a Ge barrier. This higher mobility contrasts with the expectation that alloy scattering from the barrier would reduce carrier mobility. Two mechanisms based on atom probe tomography data analyses are proposed: i) unintentionally improved SiGeSn/GeSn interface and/or ii) reduced alloy scattering from short‐range order. Significant current–voltage hysteresis is observed, with the effective threshold gate voltage shifting by more than 5 V, attributed to non‐equilibrium trapped charge at various interfaces within the SiGeSn heterostructure.

GeSn↗
DOE OSTI2021

Radiation Stability of Mixed Tin-Lead Halide Perovskites: Implications for Space Applications

Mixed organic-inorganic halide perovskite solar cells (PSCs) have received considerable attention in recent years for their impressive solar to electrical power efficiency gains and potentially lower material and processing costs for optoelectronic applications. In addition to terrestrial applications, PSCs are of interest to the space power markets for their low cost, low weight, adaptability to flexible architectures, and tolerance to high energy particle irradiation (mainly protons and electrons). Here we investigate the properties of mixed formamidinium-methylammonium tin-lead iodide (FASn)0.6(MAPb)0.4I3 perovskites which lower the lead content as well as the bandgap, making them attractive for the low bandgap absorber material in tandem PSCs. Through current density-voltage (JV) characterization at lower temperatures, majority carrier transport is hindered and a barrier to photogenerated carrier extraction is evident. This is attributed to the thermally induced change of the bandgap of the absorber layer relative to the energy selective contacts in the device. We find that although the architecture used here hinders the performance at temperatures below 225 K, the tolerance to high energy (3.7 MeV) protons is impressive, considerably out-performing commercially available thin-film CIGS. These results suggest further improvements to structural and interface stability as well as lightweight encapsulation could lead to all perovskite flexible tandem arrays deployed for power generation on missions to low Earth orbit, the moon, Mars, and beyond.

perovskite solar cells↗
DOE OSTI2025

Unraveling the Mechanism of Interfacial Charge Transfer and Photoresponsivity of WS 2 Quantum Dots/MoS 2 (0D–2D) Heterostructure-Based Transistors

To assess the efficacy of a mixed-dimensional van der Waals (vdW) heterostructure in modulating the optoelectronic responses of nanodevices, the charge transport properties of the transition-metal dichalcogenide (TMD)-based heterostructure comprising zero-dimensional (0D) WS 2 quantum dots (QDs) and two-dimensional (2D) MoS 2 flakes are critically analyzed. Herein, a facile strategy was materialized in developing an atomically thin phototransistor assembled from mechanically exfoliated MoS 2 and WS 2 QDs synthesized using a one-pot hydrothermal route. The amalgamated photodetectors exhibited a high responsivity of ∼8000 A/W at an incident power of 0.05 nW of white light, surpassing that of the pristine MoS 2 devices. Furthermore, the detectivity of pristine MoS 2 , which was on the order of 10 10 , increased to 10 12 Jones for the WS 2 QDs/MoS 2 heterostructure photodetector, outperforming other WS 2 -based materials. The quasiparticle band gap and density of states (DOS) are further analyzed to elucidate the photophysics of the WS 2 QD/MoS 2 hybrid assembly. The difference in the work function between MoS 2 and WS 2 QDs gives rise to an electric field across the 0D–2D interface, facilitating effective charge separation and migration and contributing to the enhancement of photoresponsivity. The analysis of optical responses using density functional theory (DFT) revealed stronger absorption and less reflection over a broader spectrum of wavelengths for the heterostructure compared to the pristine materials. The estimated optical conductivity aligns well with the experimentally predicted maximum photoresponsivity under visible light, which is attributed to the high absorbance of 2D MoS 2 . In conclusion, combining diverse spectroscopic and imaging techniques with quantum simulation provides insights that clarify the pertinence of 0D–2D TMDs in designing phototransistors.

WS2 QDs/MoS2 heterostructure↗
DOE OSTI2020

Enhancing Chemical Stability and Suppressing Ion Migration in CH 3 NH 3 PbI 3 Perovskite Solar Cells via Direct Backbone Attachment of Polyesters on Grain Boundaries

Organic–inorganic halide perovskites feature excellent optoelectronic properties but poor chemical stability. While passivating perovskite grain boundary (GB) by polymers shows prospects on long-term performance of perovskite solar cells (PSCs), its detailed impact on the ion migration phenomenon, which largely deteriorates the PSC stability, remains less probed. In this work, we introduce a new polar polymer, polycaprolactone (PCL), to passivate GBs of methylammonium lead triiodide (MAPbI 3 ) perovskite with only 1–2 polymer monolayers via direct backbone attachment. The PSCs with passivated MAPbI 3 , using a classic but less stable Spiro-OMeTAD (2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene) hole transport layer (HTL), exhibit improved power conversion efficiencies up to 20.1%, with 90% of the initial PCE being preserved after 400 h ambient storage, and 80% even after 100 h, 85 °C aging. The improved PSC stability indicates critical roles of PCL GB passivation in retarding moisture-induced decomposition and suppressing ion migration within the perovskite. Furthermore, time-of-flight secondary ion mass spectrometry reveals that I– ions can actively migrate into the electrode, HTL, and their interface in nonpassivated PSCs, even without an externally applied electric field, while such migration is significantly mitigated in PCL-passivated PSCs. This effective GB passivation by PCL suggests an important potential of polymer additives toward the development of stable high-performance PSCs.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Thermally Activated Delayed Photoluminescence: Deterministic Control of Excited-State Decay

Thermally activated photophysical processes are ubiquitous in numerous organic and metal-organic molecules, leading to chromophores with excited state properties that can be considered an equilibrium mixture of the available low-lying states. Relative populations of the equilibrated states are governed by temperature. Such molecules have been devised as high quantum yield emitters in modern organic light-emitting diode technology and for deterministic excited state lifetime control to enhance chemical reactivity in solar energy conversion and photocatalytic schemes. This recent discovery of thermally activated photophysics at CdSe nanocrystal-molecule interfaces enables a new paradigm wherein molecule-quantum dot constructs are used to systematically generate material with predetermined photophysical response and excited state properties. Semiconductor nanomaterials feature size-tunable energy level engineering, which considerably expands the purview of thermally activated photophysics beyond what is possible using only molecules. This Perspective is intended to provide a non-exhaustive overview of the advances that led to the integration of semiconductor quantum dots in thermally activated delayed photoluminescence (TADPL) schemes and to identify important challenges moving into the future. The initial establishment of excited state lifetime extension utilizing triplet-triplet excited-state equilibria is detailed. Next, advances involving the rational design of molecules composed of both metal-containing and organic-based chromophores that produce the desired TADPL are described. Lastly, the recent introduction of semiconductor nanomaterials into hybrid TADPL constructs is discussed, paving the way towards the realization of fine-tuned deterministic control of excited state decay. It is envisioned that libraries of synthetically facile composites will be broadly deployed as photosensitizers and light emitters for numerous synthetic and optoelectronic applications in the near future.

14 SOLAR ENERGY↗
DOE OSTI2022

Graphene Nanopattern for Single-Crystal Film Growth, Defect Reduction and Layer Transfer

Thin film heterostructures are key building blocks for advanced electronic and optoelectronic devices. For this, direct heteroepitaxy has been pursued for decades, although it has been challenging to reduce crystal defects stemming from lattice mismatches and thermal mismatches between materials. The layer transfer method has been proposed as an alternative approach, wherein dissimilar materials are separately grown and then hetero-integrated. However, the applicability of layer transfer techniques is limited by several technical challenges, such as controllability, throughput, and damage to the substrate. Remote epitaxy, which is a recently developed method to produce single-crystalline membranes, is a promising approach but cannot be applied to elemental materials such as Si and Ge. In this work, we report graphene nanopattern as a universal template for the growth of single-crystal thin films that can be exfoliated as a freestanding form. This is realized by the chemical inertness of graphene, which allows selective nucleation at the exposed region, followed by lateral overgrowth onto graphene to form a planarized thin film. By employing graphene nanopattern, both group IV and III-V materials are utilized as the substrate as well as the epilayer. The epilayer can be exfoliated at the graphene interface because partially covered graphene effectively weakens the interface, which is corroborated by theoretical analyses of spalling theory. We reveal that graphene nanopattern not only works as a weakened interface for exfoliation, but also allows for dislocation reduction in heteroepitaxial films. This is because of the flexibility and the dangling-bond-free nature of graphene, which provides an additional path for strain relaxation. Therefore, these results represent a meaningful step toward production of high-quality single-crystal membranes that can be hetero-integrated.

Kim, Hyunseok↗
DOE OSTI2022

Graphene Nanopattern for Single-Crystal Film Growth, Defect Reduction and Layer Transfer

Thin film heterostructures are key building blocks for advanced electronic and optoelectronic devices. For this, direct heteroepitaxy has been pursued for decades, although it has been challenging to reduce crystal defects stemming from lattice mismatches and thermal mismatches between materials. The layer transfer method has been proposed as an alternative approach, wherein dissimilar materials are separately grown and then hetero-integrated. However, the applicability of layer transfer techniques is limited by several technical challenges, such as controllability, throughput, and damage to the substrate. Remote epitaxy, which is a recently developed method to produce single-crystalline membranes, is a promising approach but cannot be applied to elemental materials such as Si and Ge. In this work, we report graphene nanopattern as a universal template for the growth of single-crystal thin films that can be exfoliated as a freestanding form. This is realized by the chemical inertness of graphene, which allows selective nucleation at the exposed region, followed by lateral overgrowth onto graphene to form a planarized thin film. By employing graphene nanopattern, both group IV and III-V materials are utilized as the substrate as well as the epilayer. The epilayer can be exfoliated at the graphene interface because partially covered graphene effectively weakens the interface, which is corroborated by theoretical analyses of spalling theory. We reveal that graphene nanopattern not only works as a weakened interface for exfoliation, but also allows for dislocation reduction in heteroepitaxial films. This is because of the flexibility and the dangling-bond-free nature of graphene, which provides an additional path for strain relaxation. Therefore, these results represent a meaningful step toward production of high-quality single-crystal membranes that can be hetero-integrated.

Kim, Hyunseok↗
DOE OSTI2021

Signatures of Coherent Phonon Transport in Ultralow Thermal Conductivity Two-Dimensional Ruddlesden–Popper Phase Perovskites

An emerging class of methylammonium lead iodide (MAPbI 3 )-based Ruddlesden-Popper (RP) phase perovskites, BA 2 MA n-1 Pb n I 3n+1 (n = 1-7), exhibit enhanced stability to environmental conditions relative to MAPbI 3 , yet still degrade at elevated temperatures. Here, we experimentally determine the thermal conductivities of these layered RP phases for n = 1-6, where n defines the number of repeated perovskite octahedra per layer. We measure thermal conductivities of 0.37 ± 0.13/0.12, 0.17 ± 0.08/0.07, 0.21 ± 0.05/0.04, and 0.19 ± 0.04/0.03 W/m∙K in thin films of n = 1-4 and 0.08 ± 0.06/0.04, 0.06 ± 0.04/0.03, 0.06 ± 0.03/0.03, and 0.08 ± 0.07/0.04 W/m∙K in single crystals of n = 3-6. With the exception of n = 1, these thermal conductivities are lower than the range of 0.34-0.50 W/m∙K reported for single-crystal MAPbI 3 . Reduced-order lattice dynamics modeling suggests that the initially decreasing trend of thermal conductivity in similarly oriented perovskites with increasing n may result from the transport properties of coherent phonons, emergent from the superstructure, that do not scatter at the interfaces of organic butylammonium chains and perovskite octahedra. Reduced group velocity of coherent phonons in n = 3-6, a consequence of band flattening in the phonon dispersion, is primarily responsible for their ultralow thermal conductivities. Similar effects on thermal conductivity have been experimentally demonstrated in deposited superlattices, but never in naturally defined materials such as RP phases. GIWAXS measurements reveal that higher n RP phase thin films are less orientationally controlled and therefore possess apparently elevated thermal conductivities relative to single crystals of the same n.

2D perovskites↗
DOE OSTI2020

Mechanisms of mechanochemical synthesis of cesium lead halides: pathways toward stabilization of α-CsPbI 3

Cesium lead iodide with cubic perovskite structure (α-CsPbI 3 ) is gaining significant interest in photovoltaic applications due to its excellent absorbance of the visible solar light and other attractive optoelectronic properties. However, the synthesis of stable α-CsPbI 3 poses a significant challenge. Mechanochemical synthesis is emerging as a suitable method for the preparation of cesium lead halides. This work investigates the ball milling-induced synthesis of cesium lead halides perovskite phase using halide mixing or doping approaches. The synthesis in the CsI + PbI 2 , CsBr + PbBr 2 , CsBr + PbI 2 , and CsI + PbI 2 + NdI 3 mixtures and halide exchange reactions in the CsPbBr 3 + 3KI and CsBr + PbBr 2 + 3KI systems are investigated to elucidate the mechanism of this process. Then, CsPb(I 1–x Br x ) 3 and CsPb( 1–y )Nd y I 3 materials with different x and y ratios are prepared, and their stability is probed in the air using light absorption spectroscopy. These results suggest that Nd doping is more efficient in the stabilization of the perovskite structure than partial replacement of iodine with bromine. Microstructure observations reveal the existence of two different product formation mechanisms depending on the mechanical properties of reactants. The results reveal that the milling temperature has a significant impact on the reaction kinetics. Here, the produced particles nucleate and grow at the reactant interface and retard the synthesis reaction by creating a diffusion barrier. Extended milling reduces the product particle size and creates fresh contact between reactants, thus facilitating reaction completion.

36 MATERIALS SCIENCE↗
DOE OSTI2021

All-epitaxial long-range surface plasmon polariton structures with integrated active materials

We demonstrate all-epitaxial structures capable of supporting short- and long-range surface plasmon polariton (SRSPP and LRSPP) modes in the long-wave infrared region of the electromagnetic spectrum. The SRSPP and LRSPP modes are bound to the interfaces of a buried heavily doped (n ++ ) semiconductor layer and surrounding quantum-engineered type-II superlattice (T2SL) materials. The surrounding T2SLs are designed to allow optical transitions across the frequency dispersion of the SPP modes. We map the SPP dispersion in our structure using grating-coupled angle- and polarization-dependent reflection and photoluminescence spectroscopy. The epitaxial structures are analytically described using a simplified three-layer system (T2SL/n ++ /T2SL) and modeled using rigorous coupled wave analysis with excellent agreement to our experimental results. The presented structures offer the potential to serve as long-range interconnects or waveguides in all-epitaxial plasmonic/optoelectronic systems operating in the long-wave infrared.

36 MATERIALS SCIENCE↗
DOE OSTI2022

High-Cooperativity Coupling of Rare-Earth Spins to a Planar Superconducting Resonator

The interfacing of a superconducting microwave resonator with rare-earth-doped crystals presents a promising hybrid quantum system for applications including spin-assisted transducers and memories. The coupling strength between the spins of the rare-earth ions and the microwave photons is characterized by the cooperativity. Here, we report an ultrahigh cooperativity of C~650 between rare-earth spins and a planar superconducting microwave resonator that features a highly uniform magnetic field for harnessing the strong anisotropic coupling strength of erbium-doped yttrium orthosilicate. This cooperativity rivals that from a bulk dielectric resonator and may pave a path for efficient coupling of spins with microwave photons on an integrated platform.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Microstructure of Methylammonium Lead iodide Perovskite Thin Films: A Comprehensive Study of the Strain and Texture

Controlling the microstructure of hybrid halide perovskite thin films is essential for optimizing their performance in optoelectronic devices. It is well established that the strain state of the perovskite layer affects its stability. Likewise, the orientation of the perovskite lattice is a determining parameter as these materials have shown pronounced anisotropies in their physical and mechanical properties. In this work, the authors focus on the understanding of the mechanisms that govern the strain and texture observed in MAPbI 3 thin films deposited on various oxide substrates. A thorough study of the evolution of the strain of the perovskite layer upon cooling down to room temperature from the crystallization temperature (100 °C) shows an essentially relaxed behavior of the perovskite layers. This result contradicts the commonly accepted hypothesis according to which MAPbI 3 layers synthesized above ambient temperature are strained due to the large mismatch in the thermal expansion coefficients of the perovskite and its substrate. The texture in MAPbI 3 layers is investigated by means of synchrotron full-field diffraction X-ray microscopy. This technique allows the direct observation of the [hh0] and [00l]-oriented domains at the origin of the observed textures, demonstrating both their twin and ferroelastic nature. The stability of the different domain orientations is investigated by DFT calculations, illustrating the determining role of the chemical environment at the film-substrate interface. PbI 2- terminated surfaces are found to favor the [hh0] orientations while for MAI-terminated ones, both [hh0] and [00l] domains are equally stabilized. The different results constitute an important step of clarification and understanding from the perspective of controlling the microstructure of perovskite layers.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Thermodynamic Theory of Proximity Ferroelectricity

Proximity ferroelectricity has recently been reported as a new design paradigm for inducing ferroelectricity, where a nonferroelectric polar material becomes a ferroelectric one by interfacing with a thin ferroelectric layer. Strongly polar materials, such as AlN and ZnO, which were previously unswitchable with an external field below their dielectric breakdown fields, can now be switched with practical coercive fields when they are in intimate proximity to a switchable ferroelectric. Here, we develop a general Landau-Ginzburg theory of proximity ferroelectricity in multilayers of nonferroelectrics and ferroelectrics to analyze their switchability and coercive fields. The theory predicts regimes of both “proximity switching,” where the multilayers collectively switch, and “proximity suppression,” where they collectively do not switch. The mechanism of the proximity ferroelectricity is an internal electric field determined by the polarization of the layers and their relative thickness in a self-consistent manner that renormalizes the double-well ferroelectric potential to lower the steepness of the switching barrier. Further reduction in the coercive field emerges from charged defects in the bulk that act as nucleation centers. The application of the theory to proximity ferroelectricity in Al x−1⁢ Sc x ⁢N/AlN and Zn 1−x ⁢Mg x ⁢O/ZnO bilayers is demonstrated. The theory further predicts that dielectric-ferroelectric and paraelectric-ferroelectric multilayers can potentially lead to induced ferroelectricity in the dielectric or paraelectric layers, resulting in the entire stack being switched, an exciting avenue for new discoveries. This thawing of “frozen ferroelectrics,” paraelectrics, and potentially dielectrics with high dielectric constants promises a large class of new ferroelectrics with exciting prospects for previously unrealizable domain-patterned optoelectronic and memory technologies.

36 MATERIALS SCIENCE↗