SEARCH · Engineering Papers

Results for “optical interconnect”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 181 records · Page 10

All sources NASA NTRS DOE OSTI

NASA NTRS1977

Thick-film materials for silicon photovoltaic cell manufacture

Thick film technology is applicable to three areas of silicon solar cell fabrication; metallization, junction formation, and coating for protection of screened ohmic contacts, particularly wrap around contacts, interconnection and environmental protection. Both material and process parameters were investigated. Printed ohmic contacts on n- and p-type silicon are very sensitive to the processing parameters of firing time, temperature, and atmosphere. Wrap around contacts are easily achieved by first printing and firing a dielectric over the edge and subsequently applying a low firing temperature conductor. Interconnection of cells into arrays can be achieved by printing and cofiring thick film metal pastes, soldering, or with heat curing conductive epoxies on low cost substrates. Printed (thick) film vitreous protection coatings do not yet offer sufficient optical uniformity and transparency for use on silicon. A sprayed, heat curable SiO2 based resin shows promise of providing both optical matching and environmental protection.

Field, M. B.↗

NASA NTRS2023

Distributed Quantum Processing via Integrated Regional Quantum Networks Using Free-Space Optical Links

The landscape for quantum computing is rapidly evolving with the development of quantum computers and the emergence of future science enabling applications being pursued in many areas, such as distributed quantum computing, hybrid computing scenarios that require cooperatively networked quantum and classical computing assets and more. Quantum networking is also advancing with multiple regional quantum networks and testbeds maturing across the nation. These quantum networking testbeds typically include multiple access points with a heterogeneous mixture of capabilities interconnected by fiber spanning anywhere from tens to hundreds of kilometers; many such networks incorporate a classical networking framework. Alongside these connectivity advancements in the infrastructure, there is quantum sensing device and component technology maturation that is serving to expand the body of quantum networking scenarios that are presently possible and redefining the quantum- enabled future. Bridging the present collective progress in quantum computing and quantum networking will enable the next era of purposeful advancements for national priority use-cases for the benefit of science. One such use-case is enabling future quantum computing applications via integrated regional quantum networking infrastructure in neighboring locations like New York and Maryland, both states are home to robust classical and quantum networking capabilities. To enable near-term distributed quantum computing applications via the practical integration of regional quantum networking infrastructure, free-space optical links via satellite communications will be essential to avoid the exponential loss commonly observed with fiber implementations. There is both an urgent need and a practical justification for pursuing such space-based integration scope now.

Harry Shaw↗

NASA NTRS2005

n/p/n Tunnel Junction InGaAs Monolithic Interconnected Module (MIM)

The Monolithic Interconnected Module (MIM), originally introduced at the First NREL thermophotovoltaic (TPV) conference, consists of low-bandgap indium gallium arsenide (InGaAs) photovoltaic devices, series interconnected on a common semi-insulating indium phosphide (inP) substrate. An infrared reflector is deposited on the back surface of the substrate to reflect photons, which were not absorbed in the first pass through the structure. The single largest optical loss in the current device occurs int he heavily doped p-type emitter. A new MIM design (pat.pend.) has been developed which flips the polarity of the conventional MIM cell (i.e., n/p rather than p/n), eliminating the need for the high conductivity p-type emitter. The p-type base of the cell is connected to the n-type lateral conduction layer through a thin InGaAs tunnel junction. 0.58 eV and 0.74 eV InGaAs devices have demonstrated reflectances above 90% for wavelengths beyond the bandgap (greater than 95% for unprocessed structures). Electrical measurements indicate minimal voltage drops across the tunnel junction (less than mV/junction under 1200K-blackbody illumnination) and fill factors that are above 70% at current densities (J(sub sc)) above 8 Angstroms per square centimeters for the 0.74eV devices.

Wilt, David M.↗

NASA NTRS2004

Emerging Communication Technologies (ECT) Phase 3 Final Report

The Emerging Communication Technology (ECT) project investigated three First Mile communication technologies in support of NASA s Second Generation Reusable Launch Vehicle (2nd Gen RLV), Orbital Space Plane, Advanced Range Technology Working Group (ARTWG) and the Advanced Spaceport Technology Working Group (ASTWG). These First Mile technologies have the purpose of interconnecting mobile users with existing Range Communication infrastructures. ECT was a continuation of the Range Information System Management (RISM) task started in 2002. RISM identified the three advance communication technologies investigated under ECT. These were Wireless Ethernet (Wi-Fi), Free Space Optics (FSO), and Ultra Wideband (UWB). Due to the report s size, it has been broken into three volumes: 1) Main Report 2) Appendices 3) UWB.

Bastin, Gary L.↗

NASA NTRS2003

Emerging Communication Technologies (ECT) Phase 2 Report: Main Report - Volume 1

Bastin, Gary L.↗

NASA NTRS2003

Emerging Communication Technologies (ECT) Phase 2 Report: Appendices - Volume 2

Bastin, Gary L.↗

NASA NTRS2003

Emerging Communication Technologies (ECT) Phase 2 Report: Ultra Wideband (UWB) Technology - Volume 3

Bastin, Gary L.↗

NASA NTRS1976

Application of thick-film technology to solar cell fabrication

Several uses of thick-film technology in solar cell fabrication are discussed. Wrap-around contacts are obtained by first printing and firing a dielectric over the edge and subsequently applying a low-firing temperature conductor. Interconnection of cells into arrays can be achieved by printing and co-firing thick-film pastes, soldering, or with heat-curing conductive epoxies on low-cost substrates. Despite ongoing research, printed (thick) film vitreous protective coatings do not yet offer sufficient optical uniformity and transparency for use on silicon. Ohmic contacts on n- and p-type silicon are considered.

Field, M. B.↗

NASA NTRS1978

Development of an optical parallel logic device and a half-adder circuit for digital optical processing

The paper describes the fabrication and operation of an optical parallel logic (OPAL) device which performs Boolean algebraic operations on binary images. Several logic operations on two input binary images were demonstrated using an 8 x 8 device with a CdS photoconductor and a twisted nematic liquid crystal. Two such OPAL devices can be interconnected to form a half-adder circuit which is one of the essential components of a CPU in a digital signal processor.

Athale, R. A.↗

NASA NTRS2014

Microstructure and Oxidation of a MAX Phase/Superalloy Hybrid Interface

Corrosion resistant, strain tolerant MAX phase coatings are of interest for turbine applications. Thin Cr2AlC MAX phase wafers were vacuum diffusion bonded to an advanced turbine disk alloy, LSHR, at 1100 C. The interface, examined by optical and scanning electron microscopy, revealed a primary diffusion zone consisting of ~ 10 micrometers of beta-Ni(Co)Al, decorated with various NiCoCrAl, MC and M3B2 precipitates. On the Cr2AlC side, an additional ~40 micrometers Al-depletion zone of Cr7C3 formed in an interconnected network with the beta-Ni(Co)Al. Oxidation of an exposed edge at 800 C for 100 h produced a fine-grained lenticular alumina scale over Cr2AlC and beta-Ni(Co)Al, with coarser chromia granules over the Cr7C3 regions. Subsequent growth of the diffusion layers was only ~ 5 micrometers in total. A residual stress of ~ 500 MPa was estimated for the MAX phase layer, but no interfacial damage was observed. Subsequent tests for 1000 h reveal similar results.

heat resistant alloys↗

NASA NTRS1992

Synergistic effects of ultraviolet radiation, thermal cycling, and atomic oxygen on altered and coated Kapton surfaces

The photovoltaic (PV) power system for Space Station Freedom (SSF) uses solar array blankets which provide structural support for the solar cells and house the electrical interconnections. In the low Earth orbital (LEO) environment where SSF will be located, surfaces will be exposed to potentially damaging environmental conditions including solar ultraviolet (UV) radiation, thermal cycling, and atomic oxygen. It is necessary to use ground based tests to determine how these environmental conditions would affect the mass loss and optical properties of candidate SSF blanket materials. Silicone containing, silicone coated, and SiO(x) coated polyimide film materials were exposed to simulated LEO environmental conditions to determine there durability and whether the environmental conditions of UV, thermal cycling and oxygen atoms act synergistically on these materials. A candidate PV blanket material called AOR Kapton, a polysiloxane polyimide cast from a solution mixture, shows an improvement in durability to oxygen atoms erosion after exposure to UV radiation or thermal cycling combined with UV radiation. This may indicate that the environmental conditions react synergistically with this material, and the damage predicted by exposure to atomic oxygen alone is more severe than that which would occur in LEO where atomic oxygen, thermal cycling and UV radiation are present together.

Dever, Joyce A.↗

NASA NTRS1992

Synergistic effects of ultraviolet radiation, thermal cycling and atomic oxygen on altered and coated Kapton surfaces

The photovoltaic (PV) power system for Space Station Freedom (SSF) uses solar array blankets which provide structural support for the solar cells and house the electrical interconnections. In the low earth orbital (LEO) environment where SSF will be located, surfaces will be exposed to potentially damaging environmental conditions including solar ultraviolet (UV) radiation, thermal cycling, and atomic oxygen. It is necessary to use ground based tests to determine how these environmental conditions would affect the mass loss and optical properties of candidate SSF blanket materials. Silicone containing, silicone coated, and SiO(x) coated polyimide film materials were exposed to simulated LEO environmental conditions to determine their durability and whether the environmental conditions of UV, thermal cycling and oxygen atoms act synergistically on these materials. A candidate PV blanket material called AOR Kapton, a polysiloxane polyimide cast from a solution mixture, shows an improvement in durability to oxygen atoms erosion after exposure to UV radiation or thermal cycling combined with UV radiation. This may indicate that the environmental conditions react synergistically with this material, and the damage predicted by exposure to atomic oxygen alone is more severe than that which would occur in LEO where atomic oxygen, thermal cycling and UV radiation are present together.

Dever, Joyce A.↗

NASA NTRS2011

Reliability of Ceramic Column Grid Array Interconnect Packages Under Extreme Temperatures

A paper describes advanced ceramic column grid array (CCGA) packaging interconnects technology test objects that were subjected to extreme temperature thermal cycles. CCGA interconnect electronic package printed wiring boards (PWBs) of polyimide were assembled, inspected nondestructively, and, subsequently, subjected to ex - treme-temperature thermal cycling to assess reliability for future deep-space, short- and long-term, extreme-temperature missions. The test hardware consisted of two CCGA717 packages with each package divided into four daisy-chained sections, for a total of eight daisy chains to be monitored. The package is 33 33 mm with a 27 27 array of 80%/20% Pb/Sn columns on a 1.27-mm pitch. The change in resistance of the daisy-chained CCGA interconnects was measured as a function of the increasing number of thermal cycles. Several catastrophic failures were observed after 137 extreme-temperature thermal cycles, as per electrical resistance measurements, and then the tests were continued through 1,058 thermal cycles to corroborate and understand the test results. X-ray and optical inspection have been made after thermal cycling. Optical inspections were also conducted on the CCGA vs. thermal cycles. The optical inspections were conclusive; the x-ray images were not. Process qualification and assembly is required to optimize the CCGA assembly, which is very clear from the x-rays. Six daisy chains were open out of seven daisy chains, as per experimental test data reported. The daisy chains are open during the cold cycle, and then recover during the hot cycle, though some of them also opened during the hot thermal cycle..

Ramesham, Rajeshuni↗

NASA NTRS1993

High-performance mass storage system for workstations

Reduced Instruction Set Computer (RISC) workstations and Personnel Computers (PC) are very popular tools for office automation, command and control, scientific analysis, database management, and many other applications. However, when using Input/Output (I/O) intensive applications, the RISC workstations and PC's are often overburdened with the tasks of collecting, staging, storing, and distributing data. Also, by using standard high-performance peripherals and storage devices, the I/O function can still be a common bottleneck process. Therefore, the high-performance mass storage system, developed by Loral AeroSys' Independent Research and Development (IR&D) engineers, can offload a RISC workstation of I/O related functions and provide high-performance I/O functions and external interfaces. The high-performance mass storage system has the capabilities to ingest high-speed real-time data, perform signal or image processing, and stage, archive, and distribute the data. This mass storage system uses a hierarchical storage structure, thus reducing the total data storage cost, while maintaining high-I/O performance. The high-performance mass storage system is a network of low-cost parallel processors and storage devices. The nodes in the network have special I/O functions such as: SCSI controller, Ethernet controller, gateway controller, RS232 controller, IEEE488 controller, and digital/analog converter. The nodes are interconnected through high-speed direct memory access links to form a network. The topology of the network is easily reconfigurable to maximize system throughput for various applications. This high-performance mass storage system takes advantage of a 'busless' architecture for maximum expandability. The mass storage system consists of magnetic disks, a WORM optical disk jukebox, and an 8mm helical scan tape to form a hierarchical storage structure. Commonly used files are kept in the magnetic disk for fast retrieval. The optical disks are used as archive media, and the tapes are used as backup media. The storage system is managed by the IEEE mass storage reference model-based UniTree software package. UniTree software will keep track of all files in the system, will automatically migrate the lesser used files to archive media, and will stage the files when needed by the system. The user can access the files without knowledge of their physical location. The high-performance mass storage system developed by Loral AeroSys will significantly boost the system I/O performance and reduce the overall data storage cost. This storage system provides a highly flexible and cost-effective architecture for a variety of applications (e.g., realtime data acquisition with a signal and image processing requirement, long-term data archiving and distribution, and image analysis and enhancement).

Chiang, T.↗

NASA NTRS1994

Calculation of near optimum design of InP/In(0.53)Ga(0.47)As monolithic tandem solar cells

An analysis of InP/GaAs tandem solar cell structure has been undertaken to allow for maximum AMO conversion efficiencies (space applications) while still taking into account both the theoretical and technological limitations. The dependence of intrinsic and extrinsic parameters such as diffusion lengths and generation-recombination (GR) lifetimes on N/P and P/N devices performances are clearly demonstrated. We also report for the first time the improvement attainable through the use of a new patterned tunnel junction as the inter cell ohmic interconnect. Such a design minimizes the light absorption in the interconnect region and leads to a noticeable increase in the cell efficiency. Our computations predict 27 percent AMO efficiency for N/P tandems with ideality factor gamma = 2 (GR lifetimes approximately equal 1 micron), and 36 percent for gamma = 1 (GR lifetimes approximately equals 100 microns). The method of optimization and the values of the physical and optical parameters are discussed.

Renaud, P.↗

NASA NTRS2003

Solar Array in Simulated LEO Plasma Environment

Six different types of solar arrays have been tested in large vacuum chambers. The low earth orbit plasma environment was simulated in plasma vacuum chambers, where the parameters could be controlled precisely. Diagnostic equipment included spherical Langmuir probes, mass spectrometer, low-noise CCD camera with optical spectrometer, video camera, very sensitive current probe to measure arc current, and a voltage probe to register variations in a conductor potential. All data (except video) were obtained in digital form that allowed us to study the correlation between external parameters (plasma density, additional capacitance, bias voltage, etc) and arc characteristics (arc rate, arc current pulse width and amplitude, gas species partial pressures, and intensities of spectral lines). Arc inception voltages, arc rates, and current selections are measured for samples with different coverglass materials and thickness, interconnect designs, and cell sizes. It is shown that the array with wrapthrough interconnects have the highest arc threshold and the lowest current collection. Coverglass design with overhang results in decrease of current collection and increase of arc threshold. Doubling coverglass thickness cases the increase in arc inception voltage. Both arc inception voltage and current collection increase significantly with increasing a sample temperature to 80 C. Sustained discharges are initiated between adjacent cells with potential differences of 40 V for the sample with 300 micron coverglass thickness and 60 V for the sample with 150 micron coverglass thickness. Installation of cryogenic pump in large vacuum chamber provided the possibility of considerable outgassing of array surfaces which resulted in significant decrease of arc rate. Arc sites were determined by employing a video-camera, and it is shown that the most probable sites for arc inception are triple-junctions, even though some arcs were initiated in gaps between cells. It is also shown that the arc rate increases with increasing of ion collection current. The analysis of optical spectra (240-800 nm) reveals intensive narrow atomic lines (Ag, H) and wide molecular bands (OH, CH, SiH, SiN) that confirms a complicated mechanism of arc plasma generation. The results obtained seem to be important for the understanding of the arc inception mechanism, which is absolutely essential for progress toward the design of high-voltage solar array for space application.

Vayner, Boris↗

NASA NTRS2004

Solar Array in Simulated LEO Plasma Environment

Six different types of solar arrays have been tested in large vacuum chambers. The low Earth orbit plasma environment was simulated in plasma vacuum chambers, where the parameters could be controlled precisely. Diagnostic equipment included spherical Langmuir probes, mass spectrometer, low-noise CCD camera with optical spectrometer, video camera, very sensitive current probe to measure arc current, and a voltage probe to register variations in a conductor potential. All data (except video) were obtained in digital form that allowed us to study the correlation between external parameters (plasma density, additional capacitance, bias voltage, etc) and arc characteristics (arc rate, arc current pulse width and amplitude, gas species partial pressures, and intensities of spectral lines). Arc inception voltages, arc rates, and current collections are measured for samples with different coverglass materials and thickness, interconnect designs, and cell sizes. It is shown that the array with wrapthrough interconnects have the highest arc threshold and the lowest current collection. Coverglass design with overhang results in decrease of current collection and increase of arc threshold. Doubling coverglass thickness causes the increase in arc inception voltage. Both arc inception voltage and current collection increase significantly with increasing a sample temperature to 80 C. Sustained discharges are initiated between adjacent cells with potential differences of 40 V for the sample with 300 m coverglass thickness and 60 V for the sample with 150 m coverglass thickness. Installation of cryogenic pump in large vacuum chamber provided the possibility of considerable outgassing of array surfaces which resulted in significant decrease of arc rate. Arc sites were determined by employing a video-camera, and it is shown that the most probable sites for arc inception are triple-junctions, even though some arcs were initiated in gaps between cells. It is also shown that the arc rate increases with increasing of ion collection current. The analysis of optical spectra (240-800 nm) reveals intensive narrow atomic lines (Ag, H) and wide molecular bands (OH, CH, SiH, SiN) that confirms a complicated mechanism of arc plasma generation. The results obtained seem to be important for the understanding of the arc inception mechanism, which is absolutely essential for progress toward the design of high-voltage solar array for space application.

Vayner, Boris↗

NASA NTRS1987

Optoelectronic analogs of self-programming neural nets - Architecture and methodologies for implementing fast stochastic learning by simulated annealing

Self-organization and learning is a distinctive feature of neural nets and processors that sets them apart from conventional approaches to signal processing. It leads to self-programmability which alleviates the problem of programming complexity in artificial neural nets. In this paper architectures for partitioning an optoelectronic analog of a neural net into distinct layers with prescribed interconnectivity pattern to enable stochastic learning by simulated annealing in the context of a Boltzmann machine are presented. Stochastic learning is of interest because of its relevance to the role of noise in biological neural nets. Practical considerations and methodologies for appreciably accelerating stochastic learning in such a multilayered net are described. These include the use of parallel optical computing of the global energy of the net, the use of fast nonvolatile programmable spatial light modulators to realize fast plasticity, optical generation of random number arrays, and an adaptive noisy thresholding scheme that also makes stochastic learning more biologically plausible. The findings reported predict optoelectronic chips that can be used in the realization of optical learning machines.

Farhat, Nabil H.↗