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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
NASA NTRS2001

HAMSR - The High Altitude MMIC Sounding Radiometer

WAMSR is a millimeter wave atmospheric temperature and humidity sounder that utilizes state of the art technology to enable substantial reductions in size and mass while at the same time achieve improved measurement sensitivity and accuracy. It is the first such instrument to use receivers based entirely on newly developed monolithic microwave integrated circuit technology. Sponsored by the NASA Instrument Incubator Program, HAMSR has been under development for the past 2 112 years. The first science mission takes place in Florida this summer, where HAMSR is deployed on the NASA ER-2 during the CAMEX-4 hurricane field campaign and will provide core atmospheric soundings to a number of investigators. HAMSR represents the next generation of microwave sounders.

remote sensing↗
NASA NTRS2003

120-GHz HEMT Oscillator With Surface-Wave-Assisted Antenna

Two monolithic microwave integrated circuits (MMICs) have been designed and built to function together as a source of electromagnetic radiation at a frequency of 120 GHz. One of the MMICs is an oscillator and is the highest-power 120-GHz oscillator reported thus far in the literature. The other MMIC is an end-fire antenna that radiates the oscillator signal. Although these MMICs were constructed as separate units and electrically connected with wire bonds, future oscillator/ antenna combinations could readily be fabricated as monolithic integrated units. Such units could be used as relatively high-power solid-state microwave sources in diverse applications that include automotive radar, imaging, scientific instrumentation, communications, and radio astronomy. As such, these units would be attractive alternatives to vacuum-tube oscillators, which are still used to obtain acceptably high power in the frequency range of interest. The oscillator (see figure) includes a high-electron-mobility transistor (HEMT), with gate-periphery dimensions of 4 by 37 m, in a common-source configuration. The series feedback element of the oscillator is a grounded coplanar waveguide (CPW) at the source. The HEMT is biased for class-A operation (meaning that current is conducted throughout the oscillation cycle) to maximize the output power of the oscillator. Input and output impedance-matching circuit elements are designed to maximize output power and to establish the conditions needed for oscillation. The design of the antenna takes advantage of surface waves, which, heretofore, have been regarded as highly disadvantageous because they can leak power and degrade the performances of antennas that have not been designed to exploit them. Measures taken to suppress surface waves have included complex machining of circuit substrates and addition of separate substrates. These measures are difficult to implement in standard MMIC fabrication processes. In contrast, because the design of the present antenna eliminates the need to suppress surface waves, the fabrication of the antenna is fully compatible with standard MMIC fabrication processes.

Samoska, Lorene↗
NASA NTRS2004

Reproducible Growth of High-Quality Cubic-SiC Layers

Semiconductor electronic devices and circuits based on silicon carbide (SiC) are being developed for use in high-temperature, high-power, and/or high-radiation conditions under which devices made from conventional semiconductors cannot adequately perform. The ability of SiC-based devices to function under such extreme conditions is expected to enable significant improvements in a variety of applications and systems. These include greatly improved high-voltage switching for saving energy in public electric power distribution and electric motor drives; more powerful microwave electronic circuits for radar and communications; and sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines.

Neudeck, Philip G.↗
NASA NTRS1996

ACTS Aeronautical Terminal Experiment System Description and Link Analysis

During the summer of 1994, the performance of an experimental mobile satellite communication system was demonstrated to industry and government representatives by the NASA Lewis Research Center (LeRC) and the Jet Propulsion Laboratory (JPL). The system was based on the advanced communications technology satellite (ACTS) and consisted of a K-/Ka-band active monolithic microwave integrated circuit (MMIC) phased array antenna system, ACTS mobile terminal (AMT) and link evaluation terminal (LET). A LeRC research aircraft, Learjet model 25, was outfitted with the active MMIC phased array antenna system and AMT and served as the experimental 20/30 Ghz aeronautical terminal. The LET at LeRC in Cleveland, OH, was interfaced with portions of fixed-AMT equipment and together provided the gateway station functions including ACTS interface and public service telephone network (PSTN) interface. The ACTS was operated in its microwave switch matrix (MSM) mode with a spot beam for the Learjet and another spot beam dedicated to the LET. The Learjet was flown over several major cities across the US and demonstrated the feasibility of a full-duplex compressed voice links for an aeronautical terminal through the 20/30 Ghz ACTS channel. This paper presents a technical description of the system including the MMIC phased array antenna system, AMT, Learjet, LET, and ACTS. The array antenna system consists of a 30 Ghz transmit array (LeRc/Texas Instruments) and two 20 Ghz receive arrays (USAF Rome Lab., Boeing, and Martin Marietta), each one very small with sufficient performance for a satellite voice link. The AMT consists of 2.4/4.8/9.6 Kbps voice coder/decoder, modem, PSTN interface and RF/IF converters. Link analysis is presented and compared to the actual performance data collected during the demonstration flights.

Sohn, Philip↗
NASA NTRS2009

Three MMIC Amplifiers for the 120-to-200 GHz Frequency Band

Closely following the development reported in the immediately preceding article, three new monolithic microwave integrated circuit (MMIC) amplifiers that would operate in the 120-to-200-GHz frequency band have been designed and are under construction at this writing. The active devices in these amplifiers are InP high-electron-mobility transistors (HEMTs). These amplifiers (see figure) are denoted the LSLNA150, the LSA200, and the LSA185, respectively. Like the amplifiers reported in the immediately preceding article, the LSLNA150 (1) is intended to be a prototype of low-noise amplifiers (LNAs) to be incorporated into spaceborne instruments for sensing cosmic microwave background radiation and (2) has potential for terrestrial use in electronic test equipment, passive millimeter-wave imaging systems, radar receivers, communication receivers, and systems for detecting hidden weapons. The HEMTs in this amplifier were fabricated according to 0.08- m design rules of a commercial product line of InP HEMT MMICs at HRL Laboratories, LLC, with a gate geometry of 2 fingers, each 15 m wide. On the basis of computational simulations, this amplifier is designed to afford at least 15 dB of gain, with a noise figure of no more than about 6 dB, at frequencies from 120 to 160 GHz. The measured results of the amplifier are shown next to the chip photo, with a gain of 16 dB at 150 GHz. Noise figure work is ongoing. The LSA200 and the LSA185 are intended to be prototypes of transmitting power amplifiers for use at frequencies between about 180 and about 200 GHz. These amplifiers have also been fabricated according to rules of the aforesaid commercial product line of InP HEMT MMICs, except that the HEMTs in these amplifiers are characterized by a gate geometry of 4 fingers, each 37 m wide. The measured peak performance of the LSA200 is characterized by a gain of about 1.4 dB at a frequency of 190 GHz; the measured peak performance of the LSA185 is characterized by a gain of about 2.7 dB at a frequency of 181 GHz. The measured gain results of each chip are shown next to their respective photos.

Samoska, Lorene↗
NASA NTRS1996

Highly Efficient Amplifier for Ka-Band Communications

An amplifier developed under a Small Business Innovation Research (SBIR) contract will have applications for both satellite and terrestrial communications. This power amplifier uses an innovative series bias arrangement of active devices to achieve over 40-percent efficiency at Ka-band frequencies with an output power of 0.66 W. The amplifier is fabricated on a 2.0- by 3.8-square millimeter chip through the use of Monolithic Microwave Integrated Circuit (MMIC) technology, and it uses state-of-the-art, Pseudomorphic High-Electron-Mobility Transistor (PHEMT) devices. Although the performance of the MMIC chip depends on these high-performance devices, the real innovations here are a unique series bias scheme, which results in a high-voltage chip supply, and careful design of the on-chip planar output stage combiner. This design concept has ramifications beyond the chip itself because it opens up the possibility of operation directly from a satellite power bus (usually 28 V) without a dc-dc converter. This will dramatically increase the overall system efficiency. Conventional microwave power amplifier designs utilize many devices all connected in parallel from the bias supply. This results in a low-bias voltage, typically 5 V, and a high bias current. With this configuration, substantial I(sup 2) R losses (current squared times resistance) may arise in the system bias-distribution network. By placing the devices in a series bias configuration, the total current is reduced, leading to reduced distribution losses. Careful design of the on-chip planar output stage power combiner is also important in minimizing losses. Using these concepts, a two-stage amplifier was designed for operation at 33 GHz and fabricated in a standard MMIC foundry process with 0.20-m PHEMT devices. Using a 20-V bias supply, the amplifier achieved efficiencies of over 40 percent with an output power of 0.66 W and a 16-dB gain over a 2-GHz bandwidth centered at 33 GHz. With a 28-V bias, a power level of 1.1 W was achieved with a 12-dB gain and a 36-percent efficiency. This represents the best reported combination of power and efficiency at this frequency. In addition to delivering excellent power and gain, this Ka-band MMIC power amplifier has an efficiency that is 10 percent greater than existing designs. The unique design offers an excellent match for spacecraft applications since the amplifier supply voltage is closely matched to the typical value of spacecraft bus voltage. These amplifiers may be used alone in applications of 1 W or less, or several may be combined or used in an array to produce moderate power, Ka-band transmitters with minimal power combining and less thermal stress owing to the combination of excellent efficiency and power output. The higher voltage operation of this design may also save mass and power because the dc-dc power converter is replaced with a simpler voltage regulator.

Source record↗
NASA NTRS1995

ACTS Aeronautical Terminal Experiment (AERO-X)

During the summer of 1994, the performance of an experimental mobile satellite communication system was demonstrated. Using the Advanced Communications Technology Satellite (ACTS) and the ACTS Mobile Terminal (AMT), the system demonstrated an active Monolithic Microwave Integrated Circuit (MMIC) phased-array antenna system. The antenna system was installed onboard one of NASA Lewis Research Center's research aircraft, a Learjet Model 25. It proved the viability of in-flight satellite communications services via small, flush, mountable electronic phased-array antennas. The overall system setup for the ACTS Aeronautical Terminal Experiment (AERO-X) is illustrated. The Link Evaluation Terminal (LET) at Lewis in Cleveland, Ohio, interfaced with fixed-AMT equipment, providing a seamless connection with the Public Service Telephone Network. As the Learjet was flown over several major cities across the U.S., this demonstration system allowed passengers onboard to make telephone calls as if they were using a cellular system. ACTS was operated in its microwave switch matrix mode with a spot beam for the Learjet and another spot beam dedicated to the LET.

Source record↗
NASA NTRS2010

Differential Resonant Ring YIG Tuned Oscillator

A differential SiGe oscillator circuit uses a resonant ring-oscillator topology in order to electronically tune the oscillator over multi-octave bandwidths. The oscillator s tuning is extremely linear, because the oscillator s frequency depends on the magnetic tuning of a YIG sphere, whose resonant frequency is equal to a fundamental constant times the DC magnetic field. This extremely simple circuit topology uses two coupling loops connecting a differential pair of SiGe bipolar transistors into a feedback configuration using a YIG tuned filter creating a closed-loop ring oscillator. SiGe device technology is used for this oscillator in order to keep the transistor s 1/f noise to an absolute minimum in order to achieve minimum RF phase noise. The single-end resonant ring oscillator currently has an advantage in fewer parts, but when the oscillation frequency is greater than 16 GHz, the package s parasitic behavior couples energy to the sphere and causes holes and poor phase noise performance. This is because the coupling to the YIG is extremely low, so that the oscillator operates at near the unloaded Q. With the differential resonant ring oscillator, the oscillation currents are just in the YIG coupling mechanisms. The phase noise is even better, and the physical size can be reduced to permit monolithic microwave integrated circuit oscillators. This invention is a YIG tuned oscillator circuit making use of a differential topology to simultaneously achieve an extremely broadband electronic tuning range and ultra-low phase noise. As a natural result of its differential circuit topology, all reactive elements, such as tuning stubs, which limit tuning bandwidth by contributing excessive open loop phase shift, have been eliminated. The differential oscillator s open-loop phase shift is associated with completely non-dispersive circuit elements such as the physical angle of the coupling loops, a differential loop crossover, and the high-frequency phase shift of the n-p-n transistors. At the input of the oscillator s feedback loop is a pair of differentially connected n-p-n SiGe transistors that provides extremely high gain, and because they are bulk-effect devices, extremely low 1/f noise (leading to ultralow RF phase noise). The 1/f corner frequency for n-p-n SiGe transistors is approximately 500 Hz. The RF energy from the transistor s collector output is connected directly to the top-coupling loop (the excitation loop) of a single-sphere YIG tuned filter. A uniform magnetic field to bias the YIG must be at a right angle to any vector associated with an RF current in a coupling loop in order for the precession to interact with the RF currents.

Parrott, Ronald A.↗
NASA NTRS1991

An adjustable RF tuning element for microwave, millimeter wave, and submillimeter wave integrated circuits

Planar RF circuits are used in a wide range of applications from 1 GHz to 300 GHz, including radar, communications, commercial RF test instruments, and remote sensing radiometers. These circuits, however, provide only fixed tuning elements. This lack of adjustability puts severe demands on circuit design procedures and materials parameters. We have developed a novel tuning element which can be incorporated into the design of a planar circuit in order to allow active, post-fabrication tuning by varying the electrical length of a coplanar strip transmission line. It consists of a series of thin plates which can slide in unison along the transmission line, and the size and spacing of the plates are designed to provide a large reflection of RF power over a useful frequency bandwidth. Tests of this structure at 1 GHz to 3 Ghz showed that it produced a reflection coefficient greater than 0.90 over a 20 percent bandwidth. A 2 GHz circuit incorporating this tuning element was also tested to demonstrate practical tuning ranges. This structure can be fabricated for frequencies as high as 1000 GHz using existing micromachining techniques. Many commercial applications can benefit from this micromechanical RF tuning element, as it will aid in extending microwave integrated circuit technology into the high millimeter wave and submillimeter wave bands by easing constraints on circuit technology.

Lubecke, Victor M.↗
DOE OSTI2024

Signatures of Thermal and Electrical Crosstalk in a Microwave Multiplexed Hard X-ray Transition Edge Sensor Array

We investigate the crosstalk between Transition-Edge Sensor (TES) pixels in a 24-pixel hard X-ray spectrometer array fabricated at the Advanced Photon Source, Argonne National Laboratory. Analysis shows thermal cross talk, possibly associated with insufficient thermalization, and rare but larger in magnitude electrical crosstalk between specific perpetrator-victim pixel combinations, potentially due to defects in the bias wiring or microwave multiplexing circuit. We use a method based on group-triggering and averaging to isolate the crosstalk response despite only having access to X-ray photon illumination uniform across the entire array. This allows us to identify thermal and electrical crosstalk between pixel pairs in repeated measurements to the level of 1 part in 1000 or better. In the array under study, the magnitude of observed crosstalk is small but comparable to the resolving power of this pixel design (E/Delta E similar to\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$E/\Delta {}E \sim$$\end{document} 1000 at 20 keV) and so potentially responsible for a degradation in energy resolution of the array at high incident photon rates. Having proven the methods to identify and quantify crosstalk in our setup, we can now consider mitigations.

Triamkitsawat, Panthita↗
DOE OSTI2021

System-on-chip upgrade of millimeter-wave imaging diagnostics for fusion plasma

Monolithic, millimeter wave “system-on-chip” technology has been employed in chip heterodyne radiometers in a newly developed Electron Cyclotron Emission Imaging (ECEI) system on the DIII-D tokamak for 2D electron temperature and fluctuation diagnostics. The system employs 20 horn-waveguide receiver modules each with customized W-band (75–110 GHz) monolithic microwave integrated circuit chips comprising a W-band low noise amplifier, a balanced mixer, a ×2 local oscillator (LO) frequency doubler, and two intermediate frequency amplifier stages in each module. Compared to previous quasi-optical ECEI arrays with Schottky mixer diodes mounted on planar antennas, the upgraded W-band array exhibits >30 dB additional gain and 20× improvement in noise temperature; an internal eight times multiplier chain is used to provide LO coupling, thereby eliminating the need for quasi-optical coupling. The horn-waveguide shielding housing avoids out-of-band noise interference on each module. The upgraded ECEI system plays an important role for absolute electron temperature and fluctuation measurements for edge and core region transport physics studies. An F-band receiver chip (up to 140 GHz) is under development for additional fusion facilities with a higher toroidal magnetic field. Visualization diagnostics provide multi-scale and multi-dimensional data in plasma profile evolution. Finally, a significant aspect of imaging measurement is focusing on artificial intelligence for science applications.

47 OTHER INSTRUMENTATION↗
DOE OSTI2026

Quasiparticle spectroscopy in tantalum films with different Ta/sapphire interfaces

One of the crucial aspects of current research in quantum information science is the identification and control of loss mechanisms in superconducting (SC) circuits. Although microwave measurements directly quantify device performance, additional techniques that probe quasiparticle excitations in SC films are needed to understand the microscopic mechanisms underlying dissipation and decoherence. Here, we present results from quasiparticle spectroscopy of Ta/sapphire films by measuring the Meissner-state magnetic susceptibility using a precision frequency-domain resonator specifically designed for thin films. We find direct evidence for additional low-energy excitations in samples with lower internal quality factors. These excitations are consistent with deep subgap states due to two-level systems, Yu–Shiba–Rusinov states near the gap edge, and perhaps other pair-breaking mechanisms. The developed non-destructive frequency-domain quasiparticle spectroscopy is a valuable addition to the quantum materials toolbox.

metal/substrate interlayer↗
DOE OSTI2025

End-to-End Workflow for Machine-Learning-Based Qubit Readout With QICK and hls4ml

In this article, we present an end-to-end workflow for superconducting qubit readout that embeds codesigned neural networks into the quantum instrumentation control kit (QICK). Capitalizing on the custom firmware and software of the QICK platform, which is built on Xilinx radiofrequency system-on-chip field-programmable gate arrays (FPGAs), we aim to leverage machine learning (ML) to address critical challenges in qubit readout accuracy and scalability. The workflow utilizes the hls4ml package and employs quantization-aware training to translate ML models into hardware-efficient FPGA implementations via user-friendly Python application programming interfaces. We experimentally demonstrate the design, optimization, and integration of an ML algorithm for single transmon qubit readout, achieving 96% single-shot fidelity with a latency of 32.25 ns and less than 16% FPGA lookup table resource utilization. Our results offer the community an accessible workflow to advance ML-driven readout and adaptive control in quantum information processing applications.

42 ENGINEERING↗
NASA NTRS1972

Development of a satellite microwave radiometer to sense the surface temperature of the world oceans

A proposed S-band radiometer for determining the ocean surface temperature with an absolute accuracy of + or - 1 Kelvin and a resolution of + or - .1 Kelvin was placed under the Advanced Applications Flight Experiment for further development into Nimbus readiness state. The results of assessing the following are described: effects due to the state of the sea surface, effects caused by the intervening atmosphere, and effects associated with imperfections in the instrument itself. An extensive sea truth program is also described for correlation of aircraft test flight measurements or of satellite remote measurement to in-situ data. An improved radiometer design is a modified Dicke-switch type with temperature stabilized, microwave integrated circuit, front-end and with a pulsed injection-noise nulling system. The radiometer has a multimode rectangular horn antenna with very low ohmic losses and a beam efficiency of 98% or better.

Hidy, G. M.↗
NASA NTRS1972

A wideband 12 GHz down converter

The design, fabrication, and evaluation of a single ended 12 GHz down-converter suitable for use in a low cost satellite ground terminal is described. The mixer uses waveguide, coaxial and MIC (microwave integrated circuit) transmission line components. Theoretical and experimental analyses of several microstrip circuit elements are presented including the traveling wave-directional filter, quarter wave-length proximity directional coupler, low pass filter and the quarterwave band stop filter. The optimum performance achieved for the mixer using a packaged diode was 9.4 db conversion loss and a bandwidth of 275 MHz.

Newman, B. A.↗
NASA NTRS1978

S-Band complex-weight module for adaptive processing

S-band complex weight for adaptive processing is fabricated as microwave integrated circuit. When interfaced with suitable control component, it is potentially capable of producing 25 dB rejection of interface with bandwidth of 500 MHz. Performance inproves with decreased bandwidth. Versatility stems from numerous control methods available in broadening field of adaptive processing.

Gianatasio, A. J.↗
NASA NTRS1980

Proposed Josephson voltage standard

Relatively-simple microwave integrated circuit comprising two resonators linked by Josephson junction could be set up to generate standard Josephson volt in any industrial laboratory. Standard cells and electronic equipment could be readily compared and calibrated to this standard.

Chang, C. C.↗