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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
NASA NTRS2000

Development of Electronics for Low Temperature Space Missions

The operation of electronic systems at cryogenic temperatures is anticipated for many future NASA space missions such as deep space probes and planetary surface exploration. For example, an unheated interplanetary probe launched to explore the rings of Saturn would reach an average temperature near Saturn of about -183 C. In addition to surviving the deep space harsh environment, electronics capable of low temperature operation would contribute to improving circuit performance, increasing system efficiency, and reducing payload development and launch costs. Terrestrial applications where components and systems must operate in low temperature environments include cryogenic instrumentation, superconducting magnetic energy storage, magnetic levitation transportation system, and arctic exploration. An on-going research and development program on low temperature electronics at the NASA Glenn Research Center focuses on the development of efficient power systems capable of surviving and exploiting the advantages of low temperature environments. Inhouse efforts include the design, fabrication, and characterization of low temperature power systems and the development of supporting technologies for low temperature operations, such as dielectric and insulating materials, semiconductor devices, passive power components, opto-electronic devices, as well as packaging and integration of the developed components into prototype flight hardware.

Patterson, Richard L.↗
NASA NTRS2013

Current Flow and Pair Creation at Low Altitude in Rotation-Powered Pulsars' Force-Free Magnetospheres: Space Charge Limited Flow

We report the results of an investigation of particle acceleration and electron-positron plasma generation at low altitude in the polar magnetic flux tubes of rotation-powered pulsars, when the stellar surface is free to emit whatever charges and currents are demanded by the force-free magnetosphere. We apply a new 1D hybrid plasma simulation code to the dynamical problem, using Particle-in-Cell methods for the dynamics of the charged particles, including a determination of the collective electrostatic fluctuations in the plasma, combined with a Monte Carlo treatment of the high-energy gamma-rays that mediate the formation of the electron-positron pairs.We assume the electric current flowing through the pair creation zone is fixed by the much higher inductance magnetosphere, and adopt the results of force-free magnetosphere models to provide the currents which must be carried by the accelerator. The models are spatially one dimensional, and designed to explore the physics, although of practical relevance to young, high-voltage pulsars. We observe novel behaviour (a) When the current density j is less than the Goldreich-Julian value (0 < j/j(sub GJ) < 1), space charge limited acceleration of the current carrying beam is mild, with the full Goldreich-Julian charge density comprising the charge densities of the beam and a cloud of electrically trapped particles with the same sign of charge as the beam. The voltage drops are of the order of mc(sup 2)/e, and pair creation is absent. (b) When the current density exceeds the Goldreich-Julian value (j/j(sub GJ) > 1), the system develops high voltage drops (TV or greater), causing emission of curvature gamma-rays and intense bursts of pair creation. The bursts exhibit limit cycle behaviour, with characteristic time-scales somewhat longer than the relativistic fly-by time over distances comparable to the polar cap diameter (microseconds). (c) In return current regions, where j/j(sub GJ) < 0, the system develops similar bursts of pair creation. These discharges are similar to those encountered in previous calculations by Timokhin of pair creation when the surface has a high work function and cannot freely emit charge. In cases (b) and (c), the intermittently generated pairs allow the system to simultaneously carry the magnetospherically prescribed currents and adjust the charge density and average electric field to force-free conditions. We also elucidate the conditions for pair creating beam flow to be steady (stationary with small fluctuations in the rotating frame), finding that such steady flows can occupy only a small fraction of the current density parameter space exhibited by the force-free magnetospheric model. The generic polar flow dynamics and pair creation are strongly time dependent. The model has an essential difference from almost all previous quantitative studies, in that we sought the accelerating voltage (with pair creation, when the voltage drops are sufficiently large; without, when they are small) as a function of the applied current.

Timokhin, A. N.↗
NASA NTRS1998

The Design and Development of the SMEX-Lite Power System

This paper describes the design and development of a 250W orbit average electrical power system electronic Power Node and software for use in Low Earth Orbit missions. The mass of the Power Node is 3.6 Kg (8 lb.). The dimensions of the Power Node are 30cm x 26cm x 7.9cm (11 in. x 10.25 in x 3.1 in.) The design was realized using software, Field Programmable Gate Array (FPGA) digital logic and surface mount technology. The design is generic enough to reduce the non-recurring engineering for different mission configurations. The Power Node charges one to five, low cost, 22-cell 4 AH D-cell battery packs independently. The battery charging algorithms are executed in the power software to reduce the mass and size of the power electronic. The Power Node implements a peak-power tracking algorithm using an innovative hardware/software approach. The power software task is hosted on the spacecraft processor. The power software task generates a MIL-STD-1553 command packet to update the Power Node control settings. The settings for the battery voltage and current limits, as well as minimum solar array voltage used to implement peak power tracking are contained in this packet. Several advanced topologies are used in the Power Node. These include synchronous rectification in the bus regulators, average current control in the battery chargers and quasi-resonant converters for the Field Effect Transistor (FET) transistor drive electronics. Lastly, the main bus regulator uses a feed-forward topology with the PWM implemented in an FPGA.

Rakow, Glenn P.↗
DOE OSTI2024

Heterogeneous Integration Technologies for High-temperature, High-density, Low-profile Power Modules of Wide Bandgap Devices in Electric Drive Applications (Final Technical Report)

The goal of this project is to develop packaging technologies for making high-temperature, high-density, and low-profile wide-bandgap (WBG) power electronics modules for electric drives. These modules are aimed at enabling the DOE’s University Consortium to reach its 2025 inverter targets of ≥ 100 kW/L and ≤ 2.7 $/kW. The specific objectives are to: design and fabricate SiC half-bridge power modules with double-sided cooling and parasitic inductances < 5 nH, heat flux density > 400 W/cm 2 , and working junction temperature of 200 o C; design, fabricate, and deliver a gate driver with double-sided cooled modules for the construction of a 100 kW/L inverter at Oak Ridge National Lab; and design and prototype intelligent gate drivers with integrated current sensor and a low-profile DC-DC power supply with air-core transformer for testing power modules at 200 o C junction temperature. We followed an iterative technical approach of design, simulation, fabrication, and testing of various versions of modules, current sensors, and power supply. The state-of-the-art silicon carbide devices rated at 1.2 kV and 149 A were packaged by sintered-silver bonding on an aluminum nitride direct-bond-copper substrate for high thermal conductivity, high working temperature, and high joint reliability. Porous silver posts were used to interconnect the device’s source pads to the other direct-bond-copper substrate for low mechanical stresses, ease of manufacturing, and double-sided cooling. A current sensor based on package parasitic inductance was developed to measure switching current. A dynamic feedback scheme was developed to compensate the effect of parasitic resistance and temperature variation. A constant-current class-E dc-dc converter with air-core transformer was developed. Air-core transformer was used due to the unavailability of magnetic core at high temperatures. Gate driver and power supply were integrated with the double-side cooled, high temperature SiC power modules for testing the modules at 200 o C junction temperature. Double-pulse and continuous testing of the integrated technologies validated the design and fabrication of the three component technologies. Throughout the project, we overcame the challenge for design verification caused by low prototyping yield, which then helped train the graduate students, the future workforce, to learn the engineering know-how for low-cost manufacturing of reliable products. Below is a summary of the major accomplishments of this project: development of a prototyping process for fabricating double-side cooled (1200 V, 149 A) SiC phase-leg modules capable of working to 200 o C Tj; simulation and experimental verification of the improvement of thermo-mechanical reliability of the double-side cooled SiC phase-leg module by using rigid encapsulant; design and experimental validation of a current sensor based on package parasitic inductance and a compensation solution for eliminating the effect of parasitic resistance; design and experimental validation of a low-profile power supply with six-output air-core transformer for gate driver; functional demonstration of a SiC phase-leg module integrated with its gate driver, current sensor, and an air-core power supply at 200 o C Tj in a double-pulse switching test setup and Buck converter continuous test setup; successful completion of six PhD and two MS students who are or will work at Apple Inc., Tesla Inc., Wolfspeed Inc., Microchip Inc., Monolithic Power Systems Inc., and LG Magna Inc.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
NASA NTRS2003

Electrical Devices and Circuits for Low Temperature Space Applications

The environmental temperature in many NASA missions, such as deep space probes and outer planetary exploration, is significantly below the range for which conventional commercial-off-the-shelf electronics is designed. Presently, spacecraft operating in the cold environment of such deep space missions carry a large number of radioisotope or other heating units in order to maintain the surrounding temperature of the on-board electronics at approximately 20 C. Electronic devices and circuits capable of operation at cryogenic temperatures will not only tolerate the harsh environment of deep space but also will reduce system size and weight by eliminating or reducing the heating units and their associate structures; thereby reducing system development cost as well as launch costs. In addition, power electronic circuits designed for operation at low temperatures are expected to result in more efficient systems than those at room temperature. This improvement results from better behavior in the electrical and thermal properties of some semiconductor and dielectric materials at low temperatures. An on-going research and development program on low temperature electronics at the NASA Glenn Research Center focuses on the development of efficient electrical systems and circuits capable of surviving and exploiting the advantages of low temperature environments. An overview of the program will be presented in this paper. A description of the low temperature test facilities along with selected data obtained from in-house component testing will also be discussed. On-going research activities that are being performed in collaboration with various organizations will also be presented.

Patterson, R. L.↗
DOE OSTI2021

Ab initio electron dynamics in high electric fields: Accurate prediction of velocity-field curves

Electron dynamics in external electric fields governs the behavior of solid-state electronic devices. First-principles calculations enable precise predictions of charge transport in low electric fields. However, studies of high-field electron dynamics remain elusive due to a lack of accurate and broadly applicable methods. In this work, we develop an efficient approach to solve the real-time Boltzmann transport equation with both the electric field term and ab initio electron-phonon collisions. These simulations provide field-dependent electronic distributions in the time domain, allowing us to investigate both transient and steady-state transport in electric fields ranging from low to high (> 10 kV/cm). The broad capabilities of our approach are shown by computing nonequilibrium electron occupations and velocity-field curves in Si, GaAs, and graphene, obtaining results in quantitative agreement with experiment. Our approach sheds light on microscopic details of transport in high electric fields, including the dominant scattering mechanisms and valley occupation dynamics. Our results demonstrate quantitatively accurate calculations of electron dynamics in low to high electric fields, with broad application to power and micro-electronics, optoelectronics, and sensing.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Valence Disproportionation of GeS in the PbS Matrix Forms Pb 5 Ge 5 S 12 Inclusions with Conduction Band Alignment Leading to High n-Type Thermoelectric Performance

Converting waste heat into useful electricity using solid-state thermoelectrics has a potential for enormous global energy savings. Lead chalcogenides are among the most prominent thermoelectric materials, whose performance decreases with an increase in chalcogen amounts (e.g., PbTe>PbSe>PbS). Herein, we demonstrate the simultaneous optimization of the electrical and thermal transport properties of PbS-based compounds by alloying with GeS. The addition of GeS triggers a complex cascade of beneficial events as follows: Ge 2+ substitution in Pb 2+ and discordant off-center behavior; formation of Pb 5 Ge 5 S 12 as stable second phase inclusions through valence disproportionation of Ge 2+ to Ge0 and Ge 4+ . PbS and Pb 5 Ge 5 S 12 exhibit good conduction band energy alignment that preserves the high electron mobility; the formation of Pb 5 Ge 5 S 12 increases the electron carrier concentration by introducing S vacancies. Sb doping as the electron donor produces a large power factor and low lattice thermal conductivity (κ lat ) of ~0.61 Wm -1 K -1 . The highest performance was obtained for the 14% GeS-alloyed samples, which exhibited an increased room temperature electron mobility of ~121 cm 2 V -1 s -1 for 3 × 10 19 cm -3 carrier density, and a ZT, of 1.32 at 923 K. This is ~ 55% greater that the corresponding Sb-doped PbS sample and is one of the highest reported for the n-type PbS system. Moreover, the average ZT (ZT avg ) of ~0.76 from 400 to 923 K is the highest for PbS-based systems.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Modular Wide-bandgap String Inverters for Low-cost Medium-voltage Transformerless PV Systems

The proposed technology combines advances in wide-bandgap power electronics with breakthroughs in distributed and decentralized control to produce ultra-low-cost medium-voltage transformerless PV inverters that are composed of stackable lightweight blocks. Taken together, the proposed circuit designs and accompanying control strategies will yield integrated control+circuit (C2) blocks, each comprising a converter and local controller, that can be assembled in a modular fashion to obtain distributed conversion interfaces for next-generation commercial and utility-scale PV systems. We will utilize SiC devices to obtain C2 blocks that can individually operate at a voltage and power in excess of 1 kV and 100 kW, respectively, such that ensembles of series-connected blocks perform direct dc to three-phase ac conversion at medium voltages (e.g., 12 kV–35 kV) and at multi-MW power levels.

42 ENGINEERING↗
NASA NTRS2004

Design and Performance of a Miniature Radar L-Band Transceiver

Radar electronics developed for past JPL space missions historically had been custom designed and as such, given budgetary, time, and risk constraints, had not been optimized for maximum flexibility or miniaturization. To help reduce cost and risk of future radar missions, a generic radar module was conceived. The module includes a 1.25-GHz (L-band) transceiver and incorporates miniature high-density packaging of integrated circuits in die/chip form. The technology challenges include overcoming the effect of miniaturization and high packaging density to achieve the performance, reliability, and environmental ruggedness required for space missions. The module was chosen to have representative (generic) functionality most likely required from an L-band radar. For very large aperture phased-array spaceborne radar missions, the large dimensions of the array suggest the benefit of distributing the radar electronics into the antenna array. For such applications, this technology is essential in order to bring down the cost, mass, and power of the radar electronics module replicated in each panel of the array. For smaller sized arrays, a single module can be combined with the central radar controller and still provide the bene.ts of configuration .exibility, low power, and low mass. We present the design approach for the radar electronics module and the test results for its radio frequency (RF) portion: a miniature, low-power, radiation-hard L-band transceiver.

McWatters, D.↗
NASA NTRS2004

High Electron Mobility Transistor Structures on Sapphire Substrates Using CMOS Compatible Processing Techniques

System-on-a-chip (SOC) processes are under intense development for high-speed, high frequency transceiver circuitry. As frequencies, data rates, and circuit complexity increases, the need for substrates that enable high-speed analog operation, low-power digital circuitry, and excellent isolation between devices becomes increasingly critical. SiGe/Si modulation doped field effect transistors (MODFETs) with high carrier mobilities are currently under development to meet the active RF device needs. However, as the substrate normally used is Si, the low-to-modest substrate resistivity causes large losses in the passive elements required for a complete high frequency circuit. These losses are projected to become increasingly troublesome as device frequencies progress to the Ku-band (12 - 18 GHz) and beyond. Sapphire is an excellent substrate for high frequency SOC designs because it supports excellent both active and passive RF device performance, as well as low-power digital operations. We are developing high electron mobility SiGe/Si transistor structures on r-plane sapphire, using either in-situ grown n-MODFET structures or ion-implanted high electron mobility transistor (HEMT) structures. Advantages of the MODFET structures include high electron mobilities at all temperatures (relative to ion-implanted HEMT structures), with mobility continuously improving to cryogenic temperatures. We have measured electron mobilities over 1,200 and 13,000 sq cm/V-sec at room temperature and 0.25 K, respectively in MODFET structures. The electron carrier densities were 1.6 and 1.33 x 10(exp 12)/sq cm at room and liquid helium temperature, respectively, denoting excellent carrier confinement. Using this technique, we have observed electron mobilities as high as 900 sq cm/V-sec at room temperature at a carrier density of 1.3 x 10(exp 12)/sq cm. The temperature dependence of mobility for both the MODFET and HEMT structures provides insights into the mechanisms that allow for enhanced electron mobility as well as the processes that limit mobility, and will be presented.

Mueller, Carl↗
DOE OSTI2020

Distributed Small-Signal Stability Conditions for Inverter-Based Unbalanced Microgrids

The proliferation of inverter-based generation and advanced sensing, controls, and communication infrastructure have facilitated accelerated deployment of microgrids. A coordinated network of microgrids can maintain reliable power delivery to critical facilities during extreme events. Low-inertia offered by the power-electronics–interfaced energy resources, however, can present significant challenges to ensuring stable operation of the microgrids. In this work, distributed small-signal stability conditions for inverter-based microgrids are developed that involve the droop-controller parameters and the network parameters (e.g. line impedances, loads). The distributed closed-form parametric stability conditions derived in this paper can be verified in a computationally efficient manner, facilitating reliable design and operations of networks of microgrids. Dynamic phasor models have been used to capture the effects of electromagnetic transients. Furthermore, numerical results are presented, along with PSCAD simulations, to validate the analytical stability conditions. Effects of design choices, such as the conductor types, and inverter sizes, on the small-signal stability of inverter-based microgrids are investigated to derive useful engineering insights.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2020

Integration of High-Z Converter into Full-scale Production Target for Accelerator-based Production of 99 Mo

NorthStar Medical Technologies is planning to produce the 99Mo isotope via the photonuclear route. The Rhodotron accelerator designed by IBA will be used as an electron-beam source. The Rhodotron is an efficient recirculating accelerator, providing low energy dispersion and a low-emittance electron beam. The nominal beam power is assumed to be 120 kW at 40 MeV. In photonuclear production of 99 Mo, a high-power electron beam impinges on a helium-cooled Mo disk target. Electrons are converted into photons through the Bremsstrahlung process. Consequently, high-energy photons interact with the target nuclei, producing 99 Mo through the 100 Mo(γ, n) 99 Mo reaction. Traditionally, photonuclear production is realized using high-Z material as the electron-to-photon converter. NorthStar plans not to use a high-Z converter in the initial production target design, but it may be interested in the increased production capabilities a high-Z converter can provide. The purpose of this report is to evaluate the advantages and disadvantages of incorporating a high-Z converter into the target design.

07 ISOTOPE AND RADIATION SOURCES↗
DOE OSTI2026

Design of a high power 8 MeV electron beam injector for the LERF

We present the beamline design for a high power 8 MeV electron injector to be installed at the Low Energy Recirculator Facility (LERF). The injector is designed to provide beam power of up to 80 kW for testing positron source target candidates. We discuss the results of beam dynamics simulations conducted using the General Particle Tracer (GPT) software, where electromagnetic beamline elements were optimized using multi-objective genetic algorithm tools. Additionally, we present preliminary studies on secondary particle generation from both rotating solid and free surface liquid metal jet targets described elsewhere in this workshop.

Lizarraga-Rubio, Victor [Thomas Jefferson National↗
DOE OSTI2026

Design of a high power 8 MeV electron beam injector for the LERF

Here, we present the beamline design for a high power 8 MeV electron injector to be installed at the Low Energy Recirculator Facility (LERF). The injector is designed to provide beam power of up to 80 kW for testing positron source target candidates. We discuss the results of beam dynamics simulations conducted using the General Particle Tracer (GPT) software, where electromagnetic beamline elements were optimized using multi-objective genetic algorithm tools. Additionally, we present preliminary studies on secondary particle generation from both rotating solid and free surface liquid metal jet targets described elsewhere in this workshop.

Lizarraga-Rubio, Victor Manuel [Thomas Jefferson N↗
NASA NTRS1977

Design of space-type electronic power transformers

Both open and encapsulated varieties of high reliability, low weight, and high efficiency moderate and high voltage transformers were investigated to determine the advantages and limitations of their construction in the ranges of power and voltage required for operation in the hard vacuum environment of space. Topics covered include: (1) selection of the core material; (2) preliminary calculation of core dimensions; (3) selection of insulating materials including magnet wire insulation, coil forms, and layer and interwinding insulation; (4) coil design; (5) calculation of copper losses, core losses and efficiency; (6) calculation of temperature rise; and (7) optimization of design with changes in core selection or coil design as required to meet specifications.

Ahearn, J. F.↗
NASA NTRS1980

Recent observations of energetic electrons in solar flares

The impulsive solar X-ray burst observed by the ISEE 3 X-ray spectrometer experiment on October 5, 1978 is discussed with consideration of energetic electrons in solar flares. The X-ray spectrum is consistent with a power law electron spectrum with no apparent low energy cut-off up to energies of around 5 keV. Although an explanation of the observed X-ray spectrum in terms of the emission from a multi-thermal electron spectrum cannot be ruled out, the observations lend support to the existence of nonthermal electron spectra during the impulsive phase of solar flares.

Kane, S. R.↗
NASA NTRS1992

The role of electron-positron pairs in parsec-scale radio jets

We investigate the hypothesis that the parsec-scale jets observed in extragalactic objects consist of an electron-positron pair plasma outflowing from the compact, X-ray emitting region of the source. Due to annihilation in the innermost regions, there is an upper limit on the number of electron-positron pairs that can reach the parsec-scale jet. On the other hand, there is a lower limit on the density of particles in the jet: their density must be at least equal to that needed to emit the synchrotron radiation we observe. We derive the latter limit by assuming a power-law electron distribution, with a low-energy cut-off. By comparing these two limits, we find that the constituents of parsec-scale jets may be electron-positron pairs produced in the innermost regions only if their minimum energy is greater than approximately 50 MeV. Remarkably, the same limit on the minimum particle energy is found in the case of jets consisting of electrons and protons in order that Faraday depolarization is avoided.

Ghisellini, G.↗