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DOE OSTI2014

RADIATIVE LIFETIMES OF V I AND V II

New radiative lifetimes are reported for 168 levels of V I ranging in energy from 18086 cm{sup –1} to 47702 cm{sup –1}, and for 31 levels of V II ranging in energy from 34593 cm{sup –1} to 47420 cm{sup –1}. These lifetimes are measured using time-resolved laser-induced fluorescence on a slow atomic/ionic beam as part of an ongoing study of the radiative properties of the iron group elements. All but two of the V II lifetimes have been measured before using modern laser-based methods, but a large fraction of the V I lifetimes are reported here for the first time. Comparison to earlier measurements is discussed. These new lifetimes are, for the most part, accurate to ±5%. They will be combined with branching fraction measurements to produce a large set of transition probabilities for V I and V II which are needed by the astrophysics community for stellar abundance determinations.

79 ASTRONOMY AND ASTROPHYSICS↗

DOE OSTI2019

Precise radiative lifetimes in bulk crystals from first principles: the case of wurtzite gallium nitride

Gallium nitride (GaN) is a key semiconductor for solid-state lighting, but its radiative processes are not fully understood. Here we show a first-principles approach to accurately compute the radiative lifetimes in bulk uniaxial crystals, focusing on wurtzite GaN. Our computed radiative lifetimes are in very good agreement with experiment up to 100 K. We show that taking into account excitons (through the Bethe–Salpeter equation) and spin–orbit coupling is essential for computing accurate radiative lifetimes. A model for exciton dissociation into free carriers allows us to compute the radiative lifetimes up to room temperature. Our work enables precise radiative lifetime calculations in III-nitrides and other anisotropic solid-state emitters.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2017

Exciton trapping is responsible for the long apparent lifetime in acid-treated MoS 2

Here, we show that deep trapped “dark” exciton states are responsible for the surprisingly long lifetime of band-edge photoluminescence in acid-treated single-layer MoS 2 . Temperature-dependent transient photoluminescence spectroscopy reveals an exponential tail of long-lived states extending hundreds of meV into the band gap. These subband states, which are characterized by a 4 μs radiative lifetime, quickly capture and store photogenerated excitons before subsequent thermalization up to the band edge where fast radiative recombination occurs. By intentionally saturating these trap states, we are able to measure the “true” 150 ps radiative lifetime of the band-edge exciton at 77 K, which extrapolates to ~ 600 ps at room temperature. These experiments reveal the dominant role of dark exciton states in acid-treated MoS 2 , and suggest that excitons spend >95 % of their lifetime at room temperature in trap states below the band edge. In this work, we hypothesize that these states are associated with native structural defects, which are not introduced by the superacid treatment; rather, the superacid treatment dramatically reduces nonradiative recombination through these states, extending the exciton lifetime and increasing the likelihood of eventual radiative recombination.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

DOE OSTI2024

Extracting doubly excited state lifetimes in helium directly in the time domain with attosecond noncollinear four-wave-mixing spectroscopy

The helium atom, with one nucleus and two electrons, is a prototypical system to study quantum many-body dynamics. Doubly excited states, or quantum states in which both electrons are excited by one photon, showcase electronic-correlation mediated effects. In this paper, the natural lifetimes of the doubly excited 1 P o 2 s n p Rydberg series and the 1 S e 2 p 2 dark state in helium in the 60–65 eV region are measured directly in the time domain with extreme-ultraviolet/near-infrared noncollinear attosecond four-wave-mixing (FWM) spectroscopy. The measured lifetimes agree with lifetimes deduced from spectral linewidths and theoretical predictions, and the roles of specific decay mechanisms are considered. While complex spectral line shapes in the form of Fano resonances are common in absorption spectroscopy of autoionizing states, the background-free and thus homodyned character of noncollinear FWM results exclusively in Lorentzian spectral features in the absence of strong-field effects. The onset of strong-field effects that would affect the extraction of accurate natural lifetimes in helium by FWM is determined to be approximately 0.3 Rabi cycles. This study provides a systematic understanding of the FWM parameters necessary to enable accurate lifetime extractions, which can be utilized in more complex quantum systems in the future. Published by the American Physical Society 2024

Rupprecht, Patrick (ORCID:000000026491793X)↗

DOE OSTI2014

The Number of Accumulated Photons and the Quality of Stimulated Emission Depletion Lifetime Images

Time binning is used to increase the number of photon counts in the peak channel of stimulated emission depletion (STED) fluorescence lifetime decay curves to determine how it affects the resulting lifetime image. The fluorescence lifetime of the fluorophore, Alexa Fluor 594 phalloidin, bound to F-actin is probed in cultured S2 cells at a spatial resolution of ~40 nm. This corresponds to a tenfold smaller probe volume compared to confocal imaging, and a reduced number of photons contributing to the signal. Pixel-by-pixel fluorescence lifetime measurements and error analysis show that an average of 40 ± 30 photon counts in the peak channel with a signal-to-noise ratio of 20 is enough to calculate a reliable fluorescence lifetime from a single exponential fluorescence decay. No heterogeneity in the actin cytoskeleton in different regions of the cultured cells was measured in the 40- to 400-nm spatial regime.

36 MATERIALS SCIENCE↗

DOE OSTI2025

Precision measurement of the B0 meson lifetime using B0→J/ψK∗0 decays with the ATLAS detector

A measurement of the B0$$B^{0}$$ meson lifetime using B0→J/ψK∗0$$ B^{0} \rightarrow J/\psi K^{*0} $$ decays in data from 13 TeV$$\text {TeV}$$ proton–proton collisions with an integrated luminosity of 140fb-1$$ 140~\mathrm {fb^{-1}} $$ recorded by the ATLAS detector at the LHC is presented. The measured effective lifetime is τ=1.5053±0.0012(stat.)±0.0035(syst.)ps.$$ \tau = 1.5053\pm 0.0012~\mathrm {(stat.)} \pm 0.0035~\mathrm {(syst.)~ps}. $$The average decay width extracted from the effective lifetime, using parameters from external sources, is Γd=0.6639±0.0005(stat.)±0.0016(syst.)±0.0038(ext.)ps-1,$$\begin{aligned} \Gamma _d = 0.6639\pm 0.0005~\mathrm {(stat.)} \pm 0.0016~\mathrm {(syst.)}\\ \pm 0.0038~\text {(ext.)} \text {~ps}^{-1}, \end{aligned}$$where the uncertainties are statistical, systematic and from external sources. The earlier ATLAS measurement of Γs$$\Gamma _s$$ in the Bs0→J/ψϕ$$B^{0}_{s} \rightarrow J/\psi \phi $$ decay was used to derive a value for the ratio of the average decay widths Γd$$\Gamma _d$$ and Γs$$\Gamma _s$$ for B0$$B^{0} $$ and Bs0$$B^{0}_{s} $$ mesons respectively, of ΓdΓs=0.9905±0.0022(stat.)±0.0036(syst.)±0.0057(ext.).$$ \frac{\Gamma _d }{\Gamma _s } = 0.9905\pm 0.0022~\text {(stat.)} \pm 0.0036~\text {(syst.)} \pm 0.0057~\text {(ext.)}. $$The measured lifetime, average decay width and decay width ratio are in agreement with theoretical predictions and with measurements by other experiments. This measurement provides the most precise result of the effective lifetime of the B0$$B^{0}$$ meson to date.

Aad, G↗

DOE OSTI2022

Ultrafast carrier dynamics in terahertz photoconductors and photomixers: beyond short-carrier-lifetime semiconductors

Abstract Efficient terahertz generation and detection are a key prerequisite for high performance terahertz systems. Major advancements in realizing efficient terahertz emitters and detectors were enabled through photonics-driven semiconductor devices, thanks to the extremely wide bandwidth available at optical frequencies. Through the efficient generation and ultrafast transport of charge carriers within a photo-absorbing semiconductor material, terahertz frequency components are created from the mixing products of the optical frequency components that drive the terahertz device – a process usually referred to as photomixing. The created terahertz frequency components, which are in the physical form of oscillating carrier concentrations, can feed a terahertz antenna and get radiated in case of a terahertz emitter, or mix with an incoming terahertz wave to down-convert to DC or to a low frequency photocurrent in case of a terahertz detector. Realizing terahertz photoconductors typically relies on short-carrier-lifetime semiconductors as the photo-absorbing material, where photocarriers are quickly trapped within one picosecond or less after generation, leading to ultrafast carrier dynamics that facilitates high-frequency device operation. However, while enabling broadband operation, a sub-picosecond lifetime of the photocarriers results in a substantial loss of photoconductive gain and optical responsivity. In addition, growth of short-carrier-lifetime semiconductors in many cases relies on the use of rare elements and non-standard processes with limited accessibility. Therefore, there is a strong motivation to explore and develop alternative techniques for realizing terahertz photomixers that do not rely on these defect-introduced short-carrier-lifetime semiconductors. This review will provide an overview of several promising approaches to realize terahertz emitters and detectors without short-carrier-lifetime semiconductors. These novel approaches utilize p-i-n diode junctions, plasmonic nanostructures, ultrafast spintronics, and low-dimensional materials to offer ultrafast carrier response. These innovative directions have great potentials for extending the applicability and accessibility of the terahertz spectrum for a wide range of applications.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Toward a long-lifetime polarized photoelectron gun for the Ce+BAF positron source

The addition of spin-polarized, continuous-wave (c.w.) positron beams to the 12 GeV Continuous Electron Beam Accelerator Facility (CEBAF) would provide a significant capability to the experimental nuclear physics program at Jefferson Lab. Based on bremsstrahlung and pair-production in a high-Z target, the positron source requires a 120 MeV spin-polarized c.w. electron beam of several milliamperes. While the beam dynamics of the high-current electron beam are tenable, sustaining this current for weeks of user operations requires an unprecedented charge lifetime from a high-polarization GaAs-based photocathode. A promising approach to exceed the kilocoulomb charge lifetime barrier is reducing the ion back-bombardment fluence at the photocathode. By increasing the laser size and managing the emittance growth with an adequate cathode/anode design, significantly enhanced charge lifetime may be achieved. Based upon a new simulation model that qualitatively explains the lifetime data previously measured at different spot sizes, we describe the practical implications on the parameter space available for a kilocoulomb-lifetime polarized photogun design.

Bruker, M.↗

DOE OSTI2018

SAVY-4000 O-Ring and Filter Lifetime Extension Report

The 3-year accelerated aging study of the SAVY-4000 O-ring detailed in our previous Lifetime Extension Report showed very little evidence of significant degradation to samples subjected to aggressive elevated temperature and radiation conditions. Whole container thermal aging studies followed by helium leakage testing and compression set measurements were used to establish a failure criterion estimate for O-ring compression set of ≥ 65 %, which led to an O-ring lifetime estimate of greater than 65 years at 80°C. Herein, we describe a statistical model of the 3-year accelerated aging study and present additional results gathered in FY17 that further support the lifetime extension of the O-ring to 40 years at 80°C. Because we are choosing an extremely conservative lifetime value (40 years) compared to the aging study results (>65 years), the O-ring lifetime could be extended further, especially if supported by surveillance results collected over the years to come.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Bubble lifetimes in DNA gene promoters and their mutations affecting transcription

Relative lifetimes of inherent double stranded DNA openings with lengths up to ten base pairs are presented for different gene promoters and corresponding mutants that either increase or decrease transcriptional activity, in the framework of the Peyrard-Bishop-Dauxois model. Extensive microcanonical simulations are used, with energies corresponding to physiological temperature. The bubble lifetime profiles along the DNA sequences demonstrate a significant reduction of the average lifetime at the mutation sites when the mutated promoter decreases transcription, while a corresponding enhancement of the bubble lifetime is observed in the case of mutations leading to increased transcription. The relative difference of bubble lifetimes between the mutated and the wild type promoters at the position of mutation varies from 20% to more than 30% as the bubble length is decreasing.

59 BASIC BIOLOGICAL SCIENCES↗

DOE OSTI2024

Toward a long-lifetime polarized photoelectron gun for the Ce+BAF positron source

Bruker, M.↗

DOE OSTI2023

A Novel Technique of Extracting UCN Decay Lifetime from Storage Chamber Measurements Dominated by Scattering Losses

The neutron’s lifetime is a critical parameter in the standard model. Its measurements, particularly measurements using both beamline and ultracold neutron storage techniques, have revealed significant tension. In this work, we review the status of the tension between various measurements, especially in light of the insights provided by the β-decay correlation measurements. We revisit the lifetime measurement in a material storage chamber, dominated by losses from scattering off the walls of the storage chamber. The neutron energy spectra and associated uncertainties were, for the first time, well-characterized using storage data alone. Such models have applications in the extraction of the mean time between wall bounces, which is a key parameter for neutron storage disappearance experiments in search of neutron oscillation. A comparison between the loss model and the number of neutrons stored in a single chamber allowed us to extract a neutron lifetime of τn*=880(+158/−78)stat.(+230/−114)sys.s (68.3% C.I.). Though the uncertainty of this lifetime is not competitive with currently available measurements, the highlight of this work is that we precisely identified the systematic sources of uncertainty that contribute to the neutron lifetime measurements in material storage bottles, namely from the uncertainty in the energy spectra, as well as from the storage chamber surface parameters of the Fermi potential and loss per bounce. In doing so, we highlight the underestimation of the uncertainties in the previous Monte Carlo simulations of experiments using the technique of ultracold neutron storage in material bottles.

Mohanmurthy, Prajwal (ORCID:0000000275737010)↗

NASA NTRS1980

The lifetime of the OH radical in comets at 1 AU

It has been shown that the photochemical lifetime of OH in comets is a function of the comet's radial velocity. The calculated lifetime at 1 AU can vary between 69,000 and 210,000 sec for radial velocities that vary from -58 to +59 km/sec. A comparison between the scale lengths observed for three comets and those calculated based upon the theoretical lifetime has been made. This comparison shows that in two of the comets the lifetime derived from the scale lengths is a factor of 1.7 larger than the theoretical lifetime. Suggestions are made about the origin of this discrepancy.

Jackson, W. M.↗

NASA NTRS1988

Minority-carrier lifetime analysis of silicon epitaxy and bulk crystals with nonuniformly distributed defects

Existing analyses of the pulsed response of an MOS capacitor for minority-carrier lifetime determination result in a lifetime value averaged over most of the depletion region width. In this report, an analysis of MOS C-t data is presented that enables minority-carrier generation lifetime to be plotted as a function of depletion region depth. The technique is shown to be useful for samples with bulk or buried interfacial layer defects that have defect-free surfaces. Data are presented for intrinsically gettered bulk crystals and extrinsically gettered Si(2-pct Ge) epitaxial layers with misfit dislocations. In addition, for samples that do have uniform lifetimes, the measurement time required for determining carrier lifetime has been reduced by more than an order of magnitude.

Radzimski, Zbignew↗

NASA NTRS1989

Lifetime predictions for the Solar Maximum Mission (SMM) and San Marco spacecraft

Lifetime prediction techniques developed by the Goddard Space Flight Center (GSFC) Flight Dynamics Division (FDD) are described. These techniques were developed to predict the Solar Maximum Mission (SMM) spacecraft orbit, which is decaying due to atmospheric drag, with reentry predicted to occur before the end of 1989. Lifetime predictions were also performed for the Long Duration Exposure Facility (LDEF), which was deployed on the 1984 SMM repair mission and is scheduled for retrieval on another Space Transportation System (STS) mission later this year. Concepts used in the lifetime predictions were tested on the San Marco spacecraft, which reentered the Earth's atmosphere on December 6, 1988. Ephemerides predicting the orbit evolution of the San Marco spacecraft until reentry were generated over the final 90 days of the mission when the altitude was less than 380 kilometers. The errors in the predicted ephemerides are due to errors in the prediction of atmospheric density variations over the lifetime of the satellite. To model the time dependence of the atmospheric densities, predictions of the solar flux at the 10.7-centimeter wavelength were used in conjunction with Harris-Priester (HP) atmospheric density tables. Orbital state vectors, together with the spacecraft mass and area, are used as input to the Goddard Trajectory Determination System (GTDS). Propagations proceed in monthly segments, with the nominal atmospheric drag model scaled for each month according to the predicted monthly average value of F10.7. Calibration propagations are performed over a period of known orbital decay to obtain the effective ballistic coefficient. Progagations using plus or minus 2 sigma solar flux predictions are also generated to estimate the despersion in expected reentry dates. Definitive orbits are compared with these predictions as time expases. As updated vectors are received, these are also propagated to reentryto continually update the lifetime predictions.

Smith, E. A.↗

NASA NTRS1990

Tropospheric OH and the lifetimes of hydrochlorofluorocarbons

Hydrochlorofluorocarbons (HCFCs) may be used as alternatives for the chlorofluorocarbons (CFCs). Lifetimes for the HCFCs are predicted here in two ways: integrating their loss with a global model and scaling to another compound with a better known lifetime. Both approaches are shown to yield similar results. Three-dimensional fields of modeled tropospheric OH concentrations are used to calculate lifetimes against destruction by OH for the HCFCs and other hydrogenated halocarbons. The lifetimes of various hydro-halocarbons are shown to be insensitive to possible spatial variations and seasonal cycles. It is possible to scale the HCFC lifetimes to that of methyl chloroform or methane by using a ratio of the rate coefficients for reaction with OH at an appropriate temperature, about 277 K.

Prather, Michael↗

NASA NTRS1990

Lifetime measurements by open circuit voltage decay in GaAs and InP diodes

Minority carrier lifetimes in the base of solar cells made on GaAs and InP were measured by the open-circuit voltage decay method. The measurement technique and the conditions under which the minority carrier lifetimes can be measured are described. Minority carrier lifetimes ranging from 1.6 to 34 ns in InP of different doping concentrations were measured. A minority carrier lifetime of 6 ns was measured in n-type GaAs, which agrees well with the lifetime of 5.7 ns measured by transient microwave reflection.

Bhimnathwala, H. G.↗

NASA NTRS1984

Moisture dependence of positron lifetime in Kevlar-49

Because of filamentary character of Kevlar-49 aramid fibers, there is some concern about the moisture uptake and its effect on plastic composites reinforced with Kevlar-49 fibers. As part of continuing studies of positron lifetime in polymers, we have measured positron lifetime spectra in Kevlar-49 fibers as a function of their moisture content. The long lifetime component intensities are rather low, being only of the order of 2-3 percent. The measured values of long component lifetimes at various moisture levels in the specimens are as follows: 2072 +/- 173 ps (dry); 2013 +/- 193 ps (20.7 percent saturation); 1665 +/- 85 ps (25.7 percent saturation); 1745 +/- 257 ps (32.1 percent saturation); and 1772 +/- 217 ps (100 percent saturation). It is apparent that the long component lifetime at first decreases and then increases as the specimen moisture content increases. These results have been compared with those inferred from Epon-815 and Epon-815/K-49 composite data.

Singh, Jag J.↗