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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Radiation-Hard Smart-Pixel Detector ASIC ReadOut with Digital AI in 28nm

Detectors at future high energy colliders will face enormous technical challenges. Disentangling the unprecedented numbers of particles expected in each event will require highly granular silicon pixel detectors with billions of readout channels. With event rates as high as 40 MHz, these detectors will generate petabytes of data per second. To enable discovery within strict bandwidth and latency constraints, future trackers must be capable of fast, power efficient, and radiation hard data-reduction at the source. This effort is pursuing the co-design development of high-performance readout smart pixel ASICs for a future Phase III High Luminosity upgrade of the Large Hadron Collider. A 1.6mm2 ASIC prototype was designed by Fermilab in CMOS 28 nm bulk process and submitted for manufacturing in February 2024. It leverages the analog front-end pixel design of a previous prototype fabricated and tested in 2023, which achieved a simulated detection level of ~400e- with 30fF input capacitance. The ROIC consists of two matrices of 16×16 smart pixels, each 25×25 μm2 in size. Each smart pixel contains a charge-sensitive preamplifier with leakage current compensation and three auto-zero comparators for a 2-bit flash-type ADC. There is digital space for the integration of our fully combinatorial AI that performs momentum classification at the bunch crossing rate. The total power consumption is ∼6μW per pixel, which corresponds to ~1mW/cm2. The ASIC incorporates programmable front-end charge injection circuitry to generate pixel cluster charges during characterization. The cluster profile will be generated to duplicate hit characteristics of various momentum (pT). We will present early results from chip testing.

Parpillon, Benjamin↗
DOE OSTI2024

Solution-Based Synthesis of Ultrathin Quasi-2D Amorphous Carbon for Nanoelectronics

The synthesis of ultrathin 2D amorphous dielectric film represents a major challenge due to the metastable nature of amorphous phases. We describe a scalable and solution-based strategy to prepare wafer-scale 2D amorphous carbon with thickness down to 1–2 atomic layers from coal-derived carbon quantum dots as precursors. The prepared atomically thin 2D amorphous carbon can be suspended over cavities as freestanding membranes with high modulus of 400±100 GPa and demonstrate robust dielectric properties with dielectric strength above 20 MV·cm-1 and leakage current density below 10-4 A·cm-2 through a scaled thickness of three-atomic layers. When implemented as ultrathin gate dielectrics in 2D transistors or ion-transport media in memristors, they enable exceptional device performance and spatiotemporal uniformity, resulting from their amorphous form, intrinsic ultrathinness, and 2D atomic structures.

Pham, Viet Hung [NETL Site Support Contractor, Nat↗
DOE OSTI2026

Thermal Studies of CMS High-Granularity Calorimeter (HGCAL) Cassettes for the HL-LHC Upgrade

The CMS High Granularity Calorimeter (HGCAL) is a key endcap upgrade for the High-Luminosity LHC, designed to operate in an environment of extreme radiation and high particle rates. Each HGCAL cassette integrates silicon and scintillator modules, front-end ASICs, and a copper cooling plate that provides both mechanical integrity and thermal coupling using two-phase CO₂ cooling. Stable and uniform temperature control is essential to ensure reliable performance of the front-end electronics and to limit radiation-induced leakage currents in the silicon sensors. We present results from thermal characterization studies of pre-series HGCAL cassettes assembled and tested at Fermilab. Embedded RTD/PT1000 temperature sensors were used to measure gradients across copper cooling plates, module layers, and cassette edges under powering conditions representative of operation. The measured thermal behavior demonstrates effective heat transport through the cassette stack and highlights small but systematic variations correlated with geometry and assembly tolerances. These results validate the cooling performance of HGCAL cassettes.

Wang, Jinglu [Northwestern U.]↗
DOE OSTI2022

Characterization of Low Gain Avalanche Detector Prototypes’ Response to Gamma Radiation

Motivated by the need for fast timing detectors to withstand up to 2 MGy of ionizing dose at the High Luminosity Large Hadron Collider, prototype low gain avalanche detectors (LGADs) have been fabricated in a single pad configuration, 2 × 2 arrays, and related p-i-n diodes, and exposed to Co-60 sources for study. Devices were fabricated with a range of dopant layer concentrations, and for the arrays, a variety of inter-pad distances and distances from the active area to the edge. Measurements of capacitance versus voltage and leakage current versus voltage have been made to compare pre- and post-irradiation characteristics in gain layer depletion voltage, full bulk depletion voltage, and breakdown voltage. Conclusions are drawn regarding the effects of the gammas on both surface and interface states and on their contribution to acceptor removal through non-ionizing energy loss from Compton electrons or photoelectrons. Comparison of the performances of members of the set of devices can be used to optimize gain layer parameters.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Measuring the Electronic Bandgap of Carbon Nanotube Networks in Non-Ideal p-n Diodes

The measurement of the electronic bandgap and exciton binding energy in quasi-one-dimensional materials such as carbon nanotubes is challenging due to many-body effects and strong electron–electron interactions. Unlike bulk semiconductors, where the electronic bandgap is well known, the optical resonance in low-dimensional semiconductors is dominated by excitons, making their electronic bandgap more difficult to measure. In this work, we measure the electronic bandgap of networks of polymer-wrapped semiconducting single-walled carbon nanotubes (s-SWCNTs) using non-ideal p-n diodes. We show that our s-SWCNT networks have a short minority carrier lifetime due to the presence of interface trap states, making the diodes non-ideal. We use the generation and recombination leakage currents from these non-ideal diodes to measure the electronic bandgap and excitonic levels of different polymer-wrapped s-SWCNTs with varying diameters: arc discharge (~1.55 nm), (7,5) (0.83 nm), and (6,5) (0.76 nm). Our values are consistent with theoretical predictions, providing insight into the fundamental properties of networks of s-SWCNTs. The techniques outlined here demonstrate a robust strategy that can be applied to measuring the electronic bandgaps and exciton binding energies of a broad variety of nanoscale and quantum-confined semiconductors, including the most modern nanoscale transistors that rely on nanowire geometries.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Fabricating Graphene Oxide/h-BN Metal Insulator Semiconductor Diodes by Nanosecond Laser Irradiation

To employ graphene’s rapid conduction in 2D devices, a heterostructure with a broad bandgap dielectric that is free of traps is required. Within this paradigm, h-BN is a good candidate because of its graphene-like structure and ultrawide bandgap. We show how to make such a heterostructure by irradiating alternating layers of a-C and a-BN film with a nanosecond excimer laser, melting and zone-refining constituent layers in the process. With Raman spectroscopy and ToF-SIMS analyses, we demonstrate this localized zone-refining into phase-pure h-BN and rGO films with distinct Raman vibrational modes and SIMS profile flattening after laser irradiation. Furthermore, in comparing laser-irradiated rGO-Si MS and rGO/h-BN/Si MIS diodes, the MIS diodes exhibit an increased turn-on voltage (4.4 V) and low leakage current. The MIS diode I-V characteristics reveal direct tunneling conduction under low bias and Fowler-Nordheim tunneling in the high-voltage regime, turning the MIS diode ON with improved rectification and current flow. This study sheds light on the nonequilibrium approaches to engineering h-BN and graphene heterostructures for ultrathin field effect transistor device development.

2D materials↗
DOE OSTI2026

MTL_TX: A Multi-Task Transformer Model for Improved Radiation Time-Series Estimation

Controlling radiation doses at potential radioactive facilities is critical to ensuring the safety of both personnel and the public. At the Thomas Jefferson National Accelerator Facility (JLab), multiple sensors are deployed around the three experimental halls to monitor key parameters, including single-beam current, energy levels, current leakage, and radiation values during accelerator operations. In this study, we developed a Multi-task Transformer model, MTL_TX, to accurately estimate radiation doses at sensor locations based on historical data, with the aim of enhancing safety in accelerator facilities and surrounding public areas. To improve estimation accuracy, we integrated two innovative components into the proposed model: hierarchical feature embedding (HFE) and multi-level decomposition attention (MDA). Additionally, the multi-task learning (MTL) framework effectively leverages correlations among multiple sensors, enabling individual estimations for each sensor. MTL_TX achieved outstanding results on data collected in 2018, with an MSE of 0.1464, an RMSE of 0.2353, and an R 2 score of 0.8584. Furthermore, when trained on 2018 data, MTL_TX exhibited excellent generalization capability to unseen datasets from 2016 to 2019, achieving an MSE of 0.1407, an RMSE of 0.2263, and an R 2 score of 0.8831. These results demonstrate a significant improvement over existing state-of-the-art models.

Transformer↗
DOE OSTI2022

Assessment of dislocation reduction on 100 mm diameter bulk GaN grown by the NEAT method

X-ray topography measurements on a 100 mm diameter GaN boule grown by the Near Equilibrium AmmonoThermal method revealed an improvement in dislocation density from >1 × 10 6 cm -2 to between 2 × 10 5 and 5 × 10 5 cm -2, an improvement greater than two to five times from seed to growth. This data builds on previous X-ray diffraction and defect selective etching to quantify the reduction in defect density that is closely associated with increasing growth thickness. This result indicates that there is a pathway to further dislocation reduction by increasing growth thickness for GaN crystals including those of 100 mm or larger diameter. Further reduction of the dislocation density of large-area substrates will lead to GaN power devices with reduced leakage current under reverse bias and better device performance.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor

Here we investigate the electrical characteristics of Ni Schottky contacts on n-type GaN films that have undergone ultra-high-pressure annealing (UHPA), a key processing step for activating implanted Mg. Contacts deposited on these films exhibit low rectification and high leakage current compared to contacts on as-grown films. By employing an optimized surface treatment to restore the GaN surface following UHPA, we obtain Schottky contacts with a high rectification ratio of ~10 9 , a near-unity ideality factor of 1.03, and a barrier height of ~0.9 eV. These characteristics enable the development of GaN junction barrier Schottky diodes employing Mg implantation and UHPA.

42 ENGINEERING↗
DOE OSTI2025

Response of AC-coupled Low Gain Avalanche Detectors to Ionizing and Non-ionizing Radiation Damage

Low gain avalanche diodes with DC- and AC-coupled readout were exposed to ionizing and non-ionizing radiation at levels relevant to future experiments in particle, nuclear, and medical physics and to astrophysics. Damage-related change in their acceptor removal constants and in the resistivity of the region between the guard ring and the active area are reported, as is change in the leakage current and depletion voltages of the active volumes.

FOS: Physical sciences↗
DOE OSTI2020

A pixel detector ROIC with a 3-bit, 40 Msps synchronous ADC per pixel for HL LHC

The prototype Fermi Compact Muon Solenoid (CMS) Pixel (FCP130), manufactured in a 130 nm process, is a readout integrated circuit (ROIC) designed for the High Luminosity upgrade of the Large Hadron Collider. It employs a synchronous analog to digital converter (ADC) for the front-end design, with signal processing and data conversion within a single bunch crossing of 25 ns. It is therefore capable of accurately detecting hits occurring in consecutive bunch crossings, without off-time registration of events, making it particularly suitable for the inner most layers of the vertex detector. The ROIC consists of a matrix of 48 × 160 pixels, each 100 × 30 μm2 in size. Each pixel contains a charge sensitive preamplifier with self-biasing leakage current compensation, eight auto-zero comparators and a Gray code encoder for a 3-bit flash-type ADC. The total power consumption is approximately 24 μW per pixel. The measured noise at the output of all the hit comparators across the ROIC is < 80 e- with threshold dispersion < 110 e-RMS, which allows an in-time threshold setting of ~ 1000 e-.

43 PARTICLE ACCELERATORS↗
DOE OSTI2021

SIR Glass Test Vehicle Designed to Characterize Process Materials

The exposure to harsh environments can result in reliability issues on highly dense electronic packages and circuit assemblies. One area of concern is electrochemical failure mechanisms caused by electrolytic corrosion, electrochemical migration (dendrites), and leakage currents under humid conditions. These no-fault and no-trouble found failure points are challenging to detect and to perform process control during the assembly process. The focus of this research centers on metallizing glass surface insulation resistance test vehicles to characterize materials on electronic packages and components that exhibit the highest risk of failure due to material interactions and process residues. Glass test vehicles provide a visual representation of materials when they are exposed to moisture content in the air. Harsh environments can cause material interactions resulting in morphology changes, opening, and release of active components. A transparent test vehicle is highly functional for environmental stress testing under temperature, humidity, and bias. The designed experiment will evaluate the effects of material and process residues that can undergo changes in behavior during application, which leads to local failures.

Capen, Bill↗
DOE OSTI2022

Microwatt fuel cell stack

A microwatt fuel cell stack that demonstrates a wide range temperature tolerance, low reactant cross-over and leakage, low internal leakage current, and/or effective water transport is disclosed. Both H 2 and O 2 may be supplied directly to the fuel cell stack (i.e., dead-ended). One-piece gas diffusion electrodes (GDEs) may serve as both the active electrode and manifold port. Water removal may be accomplished by permeation through the membrane to “fins” exposed by notches in the bipolar plates and gaskets.

Wilson, Mahlon Scott↗
DOE OSTI2022

Evaluation of Bifacial Modules and PV Technologies with Combined-Accelerated Stress Testing

In view of the increasing interest and market share of bifacial cells and modules, suitable substrates such as glass and transparent backsheets along with ethylene vinyl acetate (EVA) and polyolefin elastomer (POE) encapsulants were examined in combined-accelerated stress testing (C-AST) to evaluate and compare degradation modes. Testing with both monofacial and bifacial cells, we found glass-glass modules with monofacial cells led to greater grid finger breakage than those with polymeric backsheets. This is attributed to previous x-ray topography work showing higher stress in cells in glass-glass modules than glass backsheet modules. Consistent with the objectives of C-AST, which stresses modules at levels corresponding to the limits seen in the natural environment, we observed the UV-fluorescence signatures of modules tested in C-AST (considering the degradation associated with developing chromophores, moisture penetration and photobleaching effects) to be like those in fielded modules, more so than other chamber stress testing implemented for comparison. Finally, among multiple cell degradation modes that we observed such as light-induced degradation (LID), we differentiated susceptibility to potential-induced degradation (PID) on the back of the bifacial Passivated Emitter Back Cells (PERC) in C-AST. Confirming with ex-situ tests, we found polarization-type PID most prevalent in glass/glass modules with EVA as would be anticipated considering the greater leakage current through such module encapsulation. Unlike PID tests performed in the dark, which can lead to false positive PID test results, field-representative illumination is experienced by the modules on the front and back side while -1200 V system voltage is applied in C-AST, supporting the conclusion that this module type would be susceptible to PID in the field.

bifacial modules↗
DOE OSTI2023

In-Pixel Readout IC with compact in-pixel ADC for Pixel detectors at HL LHC

The prototype Smart Pixel concept test chip (SP28), designed in a CMOS 28 nm bulk process, is a proof of concept readout integrated circuit (ROIC) designed for a future Phase III High Luminosity upgrade of the Large Hadron Collider. It employs a synchronous analog to digital converter (ADC) for the front-end design, with signal processing and data conversion within a single bunch crossing of 25 ns. It is therefore capable of accurately detecting hits occurring in consecutive bunch crossings, without off-time registration of events and pileup insensitivity, making it particularly suitable for the inner most layers of the vertex detector. The ROIC consists of a matrix of 32 × 16 pixels, each 25 × 25 µm 2 in size. Each pixel contains a charge sensitive preamplifer with leakage current compensation, three auto-zero comparators for a 2-bit fash-type ADC. The total power consumption is approximately 5 µW per pixel. The measured noise at the output of all the hit comparators across the ROIC is < 90 e- with threshold dispersion < 45 e-RMS, which allows an in-time threshold setting of ≈ 475 e-.

Parpillon, Benjamin↗
DOE OSTI2023

Programmable delay device enabling large delay in small package

A programmable delay device that provides delays of more than 100 ns over a broad bandwidth is disclosed. The device includes an input stage that employs M sampling switched capacitor elements such that each sampling switched capacitor element samples at a rate of only 1/M of the fundamental sampling rate. The device includes a programmable delay stage with M programmable switched capacitor banks, each programmable switched capacitor bank having N delay switched capacitor storage elements. Thus, the programmable delay stage includes a total of M×N delay switched capacitor storage elements, thereby reducing the sampling rate by a factor of M×N. This reduced sampling rate permits much smaller sampling switches, resulting in reduced leakage current and enabling far longer programmable delay times. Lastly, the device includes an output reconstruction stage that reconstructs a delayed version of the input RF signal by combining signals from the programmable delay stage.

Forbes, Travis↗
DOE OSTI2024

Smart Pixels: In-pixel AI for on-sensor data filtering

We present a smart pixel prototype readout integrated circuit (ROIC) designed in CMOS 28 nm bulk process, with in-pixel implementation of an artificial intelligence (AI) / machine learning (ML) based data filtering algorithm designed as proof-of-principle for a Phase III upgrade at the Large Hadron Collider (LHC) pixel detector. The first version of the ROIC consists of two matrices of 256 smart pixels, each 25$\times$25 $\mu$m$^2$ in size. Each pixel consists of a charge-sensitive preamplifier with leakage current compensation and three auto-zero comparators for a 2-bit flash-type ADC. The frontend is capable of synchronously digitizing the sensor charge within 25 ns. Measurement results show an equivalent noise charge (ENC) of $\sim$30e$^-$ and a total dispersion of $\sim$100e$^-$ The second version of the ROIC uses a fully connected two-layer neural network (NN) to process information from a cluster of 256 pixels to determine if the pattern corresponds to highly desirable high-momentum particle tracks for selection and readout. The digital NN is embedded in-between analog signal processing regions of the 256 pixels without increasing the pixel size and is implemented as fully combinatorial digital logic to minimize power consumption and eliminate clock distribution, and is active only in the presence of an input signal. The total power consumption of the neural network is $\sim$ 300 $\mu$W. The NN performs momentum classification based on the generated cluster patterns and even with a modest momentum threshold, it is capable of 54.4% - 75.4% total data rejection, opening the possibility of using the pixel information at 40MHz for the trigger. The total power consumption of analog and digital functions per pixel is $\sim$ 6 $\mu$W per pixel, which corresponds to $\sim$ 1 W/cm$^2$ staying within the experimental constraints.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

Impact of 12-nm FinFET Technology Variations on TID Effects: A Comparative Study of GF 12LP and 12LP+ at the Transistor Level

Here, this article presents a comparative analysis of total ionizing dose (TID) response in GlobalFoundries’ (GF) 12 low-power (LP) and 12LP+12-nm bulk fin field effect transistor (FinFET) technologies using 10-keV X-rays. Our findings show that 12LP+ n-type transistors demonstrate higher sensitivity to TID degradation of the off-state leakage drain current compared to 12LP. Data indicate that for both 12LP and 12LP+, transistors with higher threshold voltages (VTs) exhibit lower off-state drain-source leakage postirradiation compared to transistors with lower VTs. Data consistently show that transistors with fewer fins per transistor show superior TID tolerance, in both 12LP and 12LP+ technologies. Lower VT transistors in both technologies display similar preirradiation leakage currents. On the other hand, higher VT transistors in 12LP+ show lower preirradiation leakage currents than those in 12LP, highlighting that the front-end-of-line of 12LP+ technology has been modified compared to 12LP. p-type devices in 12LP+ presented negligible degradation. Larger TID sensitivity in 12LP+ might be attributed to the implementation of dual-metal gate work functions, reduced halo doping, deeper source/drain (S/D) doping profiles, and/or 12LP+ having narrower fins compared to 12LP.

Dual-metal gate work functions↗