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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al{sub 2}O{sub 3} gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system

This paper presents a compressive study on the fabrication and optimization of GaAs metal–oxide–semiconductor (MOS) structures comprising a Al{sub 2}O{sub 3} gate oxide, deposited via atomic layer deposition (ALD), with an AlN interfacial passivation layer prepared in situ via metal–organic chemical vapor deposition (MOCVD). The established protocol afforded self-limiting growth of Al{sub 2}O{sub 3} in the atmospheric MOCVD reactor. Consequently, this enabled successive growth of MOCVD-formed AlN and ALD-formed Al{sub 2}O{sub 3} layers on the GaAs substrate. The effects of AlN thickness, post-deposition anneal (PDA) conditions, and crystal orientation of the GaAs substrate on the electrical properties of the resulting MOS capacitors were investigated. Thin AlN passivation layers afforded incorporation of optimum amounts of nitrogen, leading to good capacitance–voltage (C–V) characteristics with reduced frequency dispersion. In contrast, excessively thick AlN passivation layers degraded the interface, thereby increasing the interfacial density of states (D{sub it}) near the midgap and reducing the conduction band offset. To further improve the interface with the thin AlN passivation layers, the PDA conditions were optimized. Using wet nitrogen at 600 °C was effective to reduce D{sub it} to below 2 × 10{sup 12} cm{sup −2} eV{sup −1}. Using a (111)A substrate was also effective in reducing the frequency dispersion of accumulation capacitance, thus suggesting the suppression of traps in GaAs located near the dielectric/GaAs interface. The current findings suggest that using an atmosphere ALD process with in situ AlN passivation using the current MOCVD system could be an efficient solution to improving GaAs MOS interfaces.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Theory of multiple quantum dot formation in strained-layer heteroepitaxy

We develop a theory for the experimentally observed formation of multiple quantum dots (QDs) in strained-layer heteroepitaxy based on surface morphological stability analysis of a coherently strained epitaxial thin film on a crystalline substrate. Using a fully nonlinear model of surface morphological evolution that accounts for a wetting potential contribution to the epitaxial film's free energy as well as surface diffusional anisotropy, we demonstrate the formation of multiple QD patterns in self-consistent dynamical simulations of the evolution of the epitaxial film surface perturbed from its planar state. The simulation predictions are supported by weakly nonlinear analysis of the epitaxial film surface morphological stability. We find that, in addition to the Stranski-Krastanow instability, long-wavelength perturbations from the planar film surface morphology can trigger a nonlinear instability, resulting in the splitting of a single QD into multiple QDs of smaller sizes, and predict the critical wavelength of the film surface perturbation for the onset of the nonlinear tip-splitting instability. The theory provides a fundamental interpretation for the observations of “QD pairs” or “double QDs” and other multiple QDs reported in experimental studies of epitaxial growth of semiconductor strained layers and sets the stage for precise engineering of tunable-size nanoscale surface features in strained-layer heteroepitaxy by exploiting film surface nonlinear, pattern forming phenomena.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Effect of heavy metal layer thickness on spin-orbit torque and current-induced switching in Hf|CoFeB|MgO structures

We study the heavy metal layer thickness dependence of the current-induced spin-orbit torque (SOT) in perpendicularly magnetized Hf|CoFeB|MgO multilayer structures. The damping-like (DL) current-induced SOT is determined by vector anomalous Hall effect measurements. A non-monotonic behavior in the DL-SOT is found as a function of the thickness of the heavy-metal layer. The sign of the DL-SOT changes with increasing the thickness of the Hf layer in the trilayer structure. As a result, in the current-driven magnetization switching, the preferred direction of switching for a given current direction changes when the Hf thickness is increased above ∼7 nm. Although there might be a couple of reasons for this unexpected behavior in DL-SOT, such as the roughness in the interfaces and/or impurity based electric potential in the heavy metal, one can deduce a roughness dependence sign reversal in DL-SOT in our trilayer structure.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Fabrication of quantum dots in undoped Si/Si{sub 0.8}Ge{sub 0.2} heterostructures using a single metal-gate layer

Enhancement-mode Si/SiGe electron quantum dots have been pursued extensively by many groups for their potential in quantum computing. Most of the reported dot designs utilize multiple metal-gate layers and use Si/SiGe heterostructures with Ge concentration close to 30%. Here, we report the fabrication and low-temperature characterization of quantum dots in the Si/Si{sub 0.8}Ge{sub 0.2} heterostructures using only one metal-gate layer. We find that the threshold voltage of a channel narrower than 1 μm increases as the width decreases. The higher threshold can be attributed to the combination of quantum confinement and disorder. We also find that the lower Ge ratio used here leads to a narrower operational gate bias range. The higher threshold combined with the limited gate bias range constrains the device design of lithographic quantum dots. We incorporate such considerations in our device design and demonstrate a quantum dot that can be tuned from a single dot to a double dot. The device uses only a single metal-gate layer, greatly simplifying device design and fabrication.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Investigation of Interfacial Layer for Friction Stir Scribe Welded Aluminum to Steel Joints

Friction stir scribe (FSS) welding as a recent derivative of friction stir welding has successfully fabricated a linear joint between automotive Al and steel sheets. However, there is a lack of understanding on its bonding mechanism. In this paper, the microstructures and phases at the bonding interface of FSS welded Al to ultra-high strength steel joints were studied using scanning electron microscopy and transmission electron microscopy. Based on the microstructural analysis, it is found that both mechanical and chemical bonding occurred simultaneously, and the energy-dispersive X-ray spectroscopy revealed that a thin intermetallic compound (IMC) layer was formed at the interface. Owing to the varied material flow and heat generation, the IMC layer thickness gradually decreased from the advancing side to the retreating side, and two IMCs (i.e. Fe2Al5 and Fe4Al13) were confirmed in different weld regions using diffraction pattern (or 1D fast Fourier transform pattern). Also, a Fe/Al solid solution was noticed in the IMC layer, and several Al fringes were found in the Fe-rich side in the scribe stir zone.

friction stir scribe welding, interfacial layer, i↗
DOE OSTI2015

Aperture-time of oxygen-precursor for minimum silicon incorporation into the interface-layer in atomic layer deposition-grown HfO{sub 2}/Si nanofilms

Hafnium oxide nanofilms were grown with atomic layer deposition on H-terminated Si (001) wafers employing tetrakis dimethyl amino hafnium (TDMA-Hf) and water as precursors. While the number of cycles (30) and the aperture-time for TDMA-Hf (0.08 s) were kept constant, the aperture-time (τ{sub H{sub 2O}}) for the oxidant-agent (H{sub 2}O) was varied from 0 to 0.10 s. The structure of the films was characterized with robust analysis employing angle-resolved x-ray photoelectron spectroscopy. In addition to a ∼1 nm hafnium oxide layer, a hafnium silicate interface layer, also ∼1 nm thick, is formed for τ{sub H{sub 2O}} > 0. The incorporation degree of silicon into the interface layer (i.e., the value of 1 − x in Hf{sub x}Si{sub 1−x}O{sub y}) shows a minimum of 0.32 for τ{sub H{sub 2O}} = 0.04 s. By employing the simultaneous method during peak-fitting analysis, it was possible to clearly resolve the contribution from the silicate and from oxide to the O 1s spectra, allowing for the assessment of the oxygen composition of each layer as a function of oxidant aperture time. The uncertainties of the peak areas and on the thickness and composition of the layers were calculated employing a rigorous approach.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Highly Efficient Layer-by-Layer Processed Quaternary Organic Solar Cells with Improved Charge Transport and Reduced Energy Loss

We report how to improve charge transport properties and reduce energy losses are the two main challenges of organic solar cells (OSCs). Herein, a new device fabrication strategy that combines the layer-by-layer (LBL) method and a quaternary active layer is demonstrated to realize highly efficient photovoltaic performance of the OSCs based on PM6:PM7/Y6:O1-2F. The introduction of the second donor, PM7,forms a cascade energy-level alignment with PM6 that facilitates effective charge transfer. The second acceptor, O1-2F, which is poorly miscible with the donors, helps to reduce the miscibility between the donors and acceptors, and thus delivers a more desirable vertical phase separation of the active layer. Furthermore, the alloy acceptor of O1-2F and Y6 can optimize the horizontal and vertical morphology of the active layer, forming an effective charge separation and continuous charge transport channel. As a result, the PM6:PM7/Y6:O1-2F system shows a distinct increase in charge mobility and a reduced nonradiative lossΔVnrof 0.231 V compared to the PM6/Y6 system, achieving a high-power conversion efficiency of18.23%. The results indicate that the quaternary LBL OSCs are promising for future large-scale and industrial manufacture of the OSCs.

14 SOLAR ENERGY↗