Minority carrier lifetime, and deep level transient spectroscopy for benchmarking mid-wave infrared detector candidates
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Two rotating wheels in orthogonal relationship with helicoidal reflecting surfaces mounted on their outer rims achieve a linear speed without normal time loss in their return motion. The pitch of the helicoidal surfaces equals the displacement that the mirrors must traverse.
Solid cryogen refrigeration system for IR detector cooling in spacecraft applications
HgCdTe as IR satellite detector for terrestrial, atmospheric and ocean mapping, IR astronomy and optical communication
Recent improvements in the pyroelectric detector have been due to the development of locked-in polarization, further reduction of the FET leakage current, and reduction of short circuit noise. The pyroelectric detector has been successfully employed in these typical applications: (1) thermograph using a single detector and X-Y scanner, (2) focal plane reticle scanner, (3) linear array thermal imaging system, (4) pyroelectric image tube, (5) radiometers (vertical temperature profile radiometer, carbon dioxide sensor), (6) high speed spectrometer, and (7) laser detector.
Device functions near room temperature and is not sensitive to vibrations.
IR detector Dewars commonly suffer from shorter than desired LN2 hold times and insulation jacket vacuum corruption over relatively short time periods. In an attempt to solve this problem for a 9144 detector Dewar, small 1 liter/s appendage ion pumps were selected for continuous pumping of the vacuum jackets. This procedure extended LN2 hold times from 20 to 60 h and virtually eliminated vacuum jacket corruption. Thus the detector systems are usable continuously over periods of 6 months or more.
Lightly doped semiconductor device, with transparent insulating layer based on capacitive response to radiant energy, exhibits excellent sensitivities at room temperature.
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An undoped Ge photocapacitive detector is reported which has peak normalized detectivities at wavelengh 1.4 microns and chopping frequencies 13-1000 Hz of 9 x 10 to the 12th, 4 x 10 to the 9th cm Hz to the 1/2th/W operating respectively at temperatures 77, 195, and 295 K. The observed temperature, spectral, and frequency response of the signal and noise are explained in terms of the measured space charge and interface state properties of the device.
Mercury cadmium telluride crystals were prepared by the Bridgman method with a wide range of crystal growth rates and temperature gradients adequate to prevent constitutional supercooling under diffusion-limited, steady state, growth conditions. The longitudinal compositional gradients for different growth conditions and alloy compositions were calculated and compared with experimental data to develop a quantitative model of the crystal growth kinetics for the Hg(i-x)CdxTe alloys, and measurements were performed to ascertain the effect of growth conditions on radial compositional gradients. The pseudobinary HgTe-CdTe constitutional phase diagram was determined by precision differential thermal analysis measurements and used to calculate the segregation coefficient of Cd as a function of x and interface temperature. Computer algorithms specific to Hg(1-x)CdxTe were developed for calculations of the charge carrier concentrations, charge carrier mobilities, Hall coefficient, optical absorptance, and Fermi energy as functions of x, temperature, ionized donor and acceptor concentrations, and neutral defect concentrations.
Differential thermal analysis data were obtained on mercury cadmium telluride alloys in order to establish the liquidus temperatures for the various alloy compositions. Preliminary theoretical analyses was performed to establish the ternary phase equilibrium parameters for the metal rich region of the phase diagram. Liquid-solid equilibrium parameters were determined for the pseudobinary alloy system. Phase equilibrium was calculated and Hg(l-x) Cd(x) Te alloys were directionally solidified from pseudobinary melts. Electrical resistivity and Hall coefficient measurements were obtained.
The long wavelength cutoff of a Si:P detector was extended to 34 microns by the application of a uniaxial stress. An unstressed Si:P photoconductive detector responds to photons of up to 28 microns wavelength. By applying a uniaxial stress to a detector along the /100/ crystal axis, the response was extended to approximately 34 microns. The /100/ axis was chosen as the stress direction because theoretical calculations predicted that such a stress extends the wavelength response more than one along the /110/ axis. These theoretical calculations were based upon fits to experimental data obtained at stresses of up to approximately kbar, and indicated that the extension in wavelength response continues to increase at much larger stresses.
The photon-noise-limited performance of a radiation detector exposed to a thermal background of temperature T is analyzed by calculating the resulting specific detectivity. Both ideal photon detectors of arbitrary quantum efficiency eta and ideal thermal detectors of arbitrary emissivity eta are considered; and the effects of both shot noise and excess noise are taken into account. The relative contributions of these two sources depend on the quantum efficiency or emissivity of the system. For frequencies nu such that hnu/kT is much less than eta, excess noise can make an appreciable contribution to the total system noise. For the case of the detection of the narrow-band radiation, the specific detectivity is independent of eta in the limit hnu/kT is much less than eta.
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