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At least 181 records · Page 10

Solar activity variation of ionospheric plasma temperatures

The present status of understanding and modeling of the variation of electron and ion temperatures with solar activity is reviewed. All atmospheric and ionospheric densities and temperatures are positively correlated with solar activity except the electron temperature, which exhibits a rather complex variation pattern during a solar cycle. The ion temperature at low altitudes closely follows the variation patterns of the neutral temperature. The electron temperature at high altitudes increases with increasing solar activity; the increase is larger during day than during night and exhibits a latitudinal variation. At low altitudes during daytime, tha amplitude of the seasonal variation of the electron temperature increases toward the solar maximum. At 400 km during daytime, the summer electron temperatures for Millstone Hill increase slightly toward higher solar activities, whereas the winter temperatures decrease distinctly. For Arecibo, an opposite trend is noticeable.

Bilitza, D.↗

Trichite growth during oxidation of titanium and TA6V4 alloy by water vapor at high temperatures

Analysis by electron scanning microscope detected the formation of rutile trichites on the surface of specimens of titanium and titanium alloy TA6V4 oxidized in water vapor in the temperature range 650 to 950 C and the water vapor pressure range from 0.5 to 18 torr. In all specimens, two sublayers of rutile were formed: an external layer of basalt-like appearance, and a microcrystalline inner layer. Morphology of the trichites depends on temperature and the material (whether metal or alloy), but not on vapor pressure.

Coddet, C.↗

An Overview of Wide Bandgap Silicon Carbide Sensors and Electronics Development at NASA Glenn Research Center

A brief overview is presented of the sensors and electronics development work ongoing at NASA Glenn Research Center which is intended to meet the needs of future aerospace applications. Three major technology areas are discussed: 1) high temperature SiC electronics, 2) SiC gas sensor technology development, and 3) packaging of harsh environment devices. Highlights of this work include world-record operation of SiC electronic devices including 500?C JFET transistor operation with excellent properties, atomically flat SiC gas sensors integrated with an on-chip temperature detector/heater, and operation of a packaged AC amplifier. A description of the state-of-the-art is given for each topic. It is concluded that significant progress has been made and that given recent advancements the development of high temperature smart sensors is envisioned.

Hunter, Gary W.↗

Communications Transceivers for Venus Surface Missions

The high temperature of the surface of Venus poses many difficulties. Previous Venus landers have only operated for short durations before succumbing to the heat. NASA Glenn Research Center conducted a study on communications for long duration Venus surface missions. I report the findings in this presentation. Current technology allows production of communications transceivers that can operate on the surface of Venus, at temperatures above 450 C and pressures of over 90 atmospheres. While these transceivers would have to be relatively simple, without much of the advanced signal processing often used in modern transceivers, since current and near future integrated circuits cannot operate at such high temperatures, the transceivers will be able to meet the requirements of proposed Venus Surface mission. The communication bands of interest are High Frequency or Very High Frequency (HFNHF) for communication between Venus surface and airborne probes (including surface to surface and air to air), and Ultra High Frequency (UHF) to Microwave bands for communication to orbiters. For HFNHF, transceivers could use existing vacuum tube technology. The packaging of the vacuum tubes may need modification, but the internal operating structure already operates at high temperatures. Using metal vacuum structures instead of glass, allows operation at high pressure. Wide bandgap transistors and diodes may be able to replace some of the thermionic components. VHF communications would be useful for line-of- sight operations, while HF would be useful for short-wave type communications using the Venusian ionosphere. UHF and microwave communications use magnetically focused thermionic devices, such as traveling wave tubes (TWTs), magnetron (M-type) amplifiers, and klystrons for high power amplifiers, and backward wave oscillators (BWOs) and reflex klystrons for oscillators. Permanent magnets are already in use in industry that can operate at 500 C. These magnets could focus electron beam tubes on the surface of Venus. While microwave windows will need to be designed for the high pressure, diamond windows have already been demonstrated, so high-pressure microwave windows can be designed and built. Thus, all of these devices could be useful for Venus surface missions. Current electronic power conditioners to supply the high voltages used in these microwave devices cannot operate at high temperatures, but earlier electronic power conditioners that used vacuum tubes can be modified to work at high temperature. Evaluating the various devices in this study, the M-type traveling wave tube (where a traveling wave structure is used in a crossed-field device, similar to the Amplitron used on the Apollo missions) stood out for the high power amplifier since it requires a single high voltage, simplifying the power supply design. Since the receiver amplifier is a low power amplifier, the loss of efficiency in linear beam devices without a depressed collector (and thus needing a single high voltage) is not important; a low noise TWT is a possible solution. Before solid-state microwave amplifiers were available, such TWTs were built with a 1-2 dB noise figure. A microwave triode or transistor made from a wide bandgap material may be preferable, if available. Much of the development work needed for Venusian communication devices will need to focus on the packaging of the devices, and their connections, but the technology is available to build transceivers that can operate on the surface of Venus indefinitely.

Force, Dale A.↗

Radiation and temperature effects on electronic components investigated under the CSTI high capacity power project

The effects of nuclear radiation and high temperature environments must be fully known and understood for the electronic components and materials used in both the Power Conditioning and Control subsystem and the reactor Instrumentation and Control subsystem of future high capacity nuclear space power systems. This knowledge is required by the designer of these subsystems in order to develop highly reliable, long-life power systems for future NASA missions. A review and summary of the experimental results obtained for the electronic components and materials investigated under the power management element of the Civilian Space Technology Initiative (CSTI) high capacity power project are presented: (1) neutron, gamma ray, and temperature effects on power semiconductor switches, (2) temperature and frequency effects on soft magnetic materials; and (3) temperature effects on rare earth permanent magnets.

Schwarze, Gene E.↗

The effect of filament peaking on electron beam weld quality

Electron beam welding uses high intensity beams that are generated by an electron emitting cathode under high vacuum conditions. The cathode, typically a ribbon or wire filament of refractory metal, must be heated to sufficiently high temperatures for electron emission to occur and must be carefully controlled to produce the desired beam current while at the same time optimizing filament lifetime. Traditional methods for doing this in commonly used triode gun assemblies consist of first finding the filament knee point in the filament current versus beam current relationship that produces the desired beam current for a given beam voltage. The filament current is then increased by some amount, typically 5–10%, per conventional wisdom to produce a peaked beam. This investigation studies and quantifies the beam and weld quality produced by underkneed and overpeaked filaments using electron beam diagnostics to measure the power density distribution of these beams. Underkneed filaments are shown to have power densities that drop off very quickly below the traditional knee, resulting in poor weld penetration. Kneed filaments do not reach the full beam intensity and also produce shallow welds. Increasing the filament current 10% above the traditional knee was shown to produce a circular Gaussian-like beam with peaked intensity optimized for welding and for filament lifetime. Further increases in the filament current that produce overpeaked beams do not significantly change the beam or weld quality and would only contribute to a reduced filament lifetime.

Electron Beam Welding↗

Fabrication of photovoltaic laser energy converterby MBE

A laser-energy converter, fabricated by molecular beam epitaxy (MBE), was developed. This converter is a stack of vertical p-n junctions connected in series by low-resistivity, lattice matched CoSi2 layers to achieve a high conversion efficiency. Special high-temperature electron-beam (e-beam) sources were developed especially for the MBE growth of the junctions and CoSi2 layers. Making use of the small (greater than 1.2 percent) lattice mismatch between CoSi2 and Si layers, high-quality and pinhole-free epilayers were achieved, providing a capability of fabricating all the junctions and connecting layers as a single growth process with one pumpdown. Well-defined multiple p-n junctions connected by CoSi2 layers were accomplished by employing a low growth temperature (greater than 700 C) and a low growth rate (less than 0.5 microns/hour). Producing negligible interdiffusion, the low growth temperature and rate also produced negligible pinholes in the CoSi2 layers. For the first time, a stack of three p-n junctions connected by two 10(exp -5) Ohm-cm CoSi2 layers was achieved, meeting the high conversion efficiency requirement. This process can now be optimized for high growth rate to form a practical converter with 10 p-n junctions in the stack.

Lu, Hamilton↗

Assessment of Durable SiC JFET Technology for +600 C to -125 C Integrated Circuit Operation

Electrical characteristics and circuit design considerations for prototype 6H-SiC JFET integrated circuits (ICs) operating over the broad temperature range of -125 C to +600 C are described. Strategic implementation of circuits with transistors and resistors in the same 6H-SiC n-channel layer enabled ICs with nearly temperature-independent functionality to be achieved. The frequency performance of the circuits declined at temperatures increasingly below or above room temperature, roughly corresponding to the change in 6H-SiC n-channel resistance arising from incomplete carrier ionization at low temperature and decreased electron mobility at high temperature. In addition to very broad temperature functionality, these simple digital and analog demonstration integrated circuits successfully operated with little change in functional characteristics over the course of thousands of hours at 500 C before experiencing interconnect-related failures. With appropriate further development, these initial results establish a new technology foundation for realizing durable 500 C ICs for combustion engine sensing and control, deep-well drilling, and other harsh-environment applications.

Neudeck, P. G.↗

Path integral molecular dynamics: A high-fidelity approach to quantum dynamics of electrons

We investigate electron transport in the uniform electron gas using ring-polymer molecular dynamics (RPMD). Working in the weakly coupled, non-degenerate regime, we use RPMD to probe how the onset of quantum diffraction effects at high temperature reshapes electron–electron collisions and leads to a classical-to-quantum crossover in macroscopic transport properties. Static thermodynamics obtained with RPMD are consistent with the weak-coupling equation of state, confirming correct quantum Boltzmann sampling. Real-time transport extracted from mean square displacements exhibits the expected ballistic-to-diffusive transition and a systematic reduction of the electronic self-diffusivity as quantum effects strengthen, due to quantum diffraction modifying electron–electron collisions. Direct ring-polymer scattering simulations reveal diffractive “softening” of binary deflections, providing a micro-to-macro link between collision physics and diffusion. The present study establishes RPMD as a quantitative, trajectory-based tool for electron transport across the classical–quantum crossover and furnishes benchmarks for improving Coulomb-log interpolation models. We outline extensions to multi-component plasmas and a path to incorporate Fermi–Dirac statistics within path-integral dynamics.

Electronic transport↗

Anomalous resistivity and electron heating by lower hybrid drift waves inside reconnecting current sheets

Inside an electron diffusion region of laboratory reconnection experiments, the quasi-electrostatic lower hybrid drift wave (ES-LHDW) is observed when a significant guide field component is present. Through direct measurement of the anomalous drag term and quasilinear analysis, it is shown that ES-LHDW can account for approximately 20% of the mean reconnection electric field in a case with moderate guide field. This value exceeds the contribution from classical resistivity, which is around 10%. The effects of the Lorentz force term, often neglected for electrostatic waves, are crucial for the observed correlation between electric field and density fluctuations. Anomalous electron heating by the perturbed current and resistivity (2.6 MW/m 3 ) also surpasses the classical Ohmic heating, which is about 2.0 MW/m 3 . For the case with a high guide field, significantly higher local electron temperatures were observed during periods of strong ES-LHDW activity. A statistical analysis further supports electron heating by LHDW, showing a larger increase in electron temperature with a high guide field. Finally, data from the Magnetospheric Multiscale mission provide evidence of Landau damping of ES-LHDW, suggesting that ES-LHDW may contribute to the generation of nonthermal electrons along the direction parallel to the magnetic field.

Magnetic reconnection↗

Extreme Environment Capable, Modular and Scalable Power Processing Unit for Solar Electric Propulsion

This paper is to present a concept of a modular and scalable High Temperature Boost (HTB) Power Processing Unit (PPU) capable of operating at temperatures beyond the standard military temperature range. The various extreme environments technologies are also described as the fundamental technology path to this concept. The proposed HTB PPU is intended for power processing in the area of space solar electric propulsion, where the reduction of in-space mass and volume are desired, and sometimes even critical, to achieve the goals of future space flight missions. The concept of the HTB PPU can also be applied to other extreme environment applications, such as geothermal and petroleum deep-well drilling, where higher temperature operation is required.

Electronics↗

500(deg)C electronics for harsh environments

Solid state vacuum devices (SSVDs) are a relatively new class of electronic devices. Innosys is a leading producer of high frequency SSVDs for a number of applications, including RF communications. SSVDs combine features inherent to both solid state and vacuum transistors. Electron transport can be by solid state or vacuum or both. The focus of this talk is on thermionic SSVDs, in which the primary vacuum transport is by thermionically liberated electron emission.

high temperature electronics↗

Stoichiometric effects on grain growth in zirconium carbide coatings for high-temperature nuclear fuel

Interest in coated particle fuel for space nuclear propulsion (SNP) has expanded in recent years due to successful demonstrations of the resiliency of the coatings to extreme environments. For SNP applications, the coating layer for the particle design needs to be able to withstand exposure to high temperature hydrogen during operating conditions. ZrC has been proposed as a protective layer, however, it is important to understand the high temperature behavior to ensure adequate protection to this fuel. In this study, surrogate ZrC coated particles were heat treated at 1900 °C up to 300 min, to examine how the microstructure evolves when exposed to high temperature. Scanning electron microscopy and electron backscatter diffraction (EBSD) were conducted to determine grain size and grain boundary character and orientation to determine the degree of change in the ZrC layer post heat treatment. Raman spectroscopy provided insight to understand how the as-fabricated stoichiometry of each sample contributed to the differences in grain growth behavior. Despite the as-fabricated samples showing a similar initial grain size and grain boundary character, the samples with a higher amount of excess carbon exhibited smaller grain areas and slower growth rates when exposed to 1900 °C. In conclusion, this investigation details the as-fabricated microstructure of the ZrC layer, specifically grain size, evolved under high temperature as this can impact the performance of the fuel under operating conditions.

EBSD↗

Electron-ion equilibration in superheated gold

Electron-ion equilibration dynamics in samples driven into superheated states with multi-eV electron temperatures represent a fundamental process in nonequilibrium physics. A clear picture of the evolving ion temperature is essential for understanding the strength of the electron-ion coupling. However, direct, model-independent measurements of the ion temperature in laser-irradiated samples have remained experimentally elusive. Using inelastic X-ray scattering with meV-resolution in gold samples, the ion response to ultrafast heating by the hot electrons can be resolved, quantifying the electron-ion equilibration dynamics. We report measurements revealing a strongly enhanced energy transfer rate compared to that in weakly excited gold. Moreover, we obtain a quasi-constant electron-ion coupling at the highly elevated electron temperatures. These results place new constraints on electron-ion energy transfer in warm dense matter and establish a path toward quantitative benchmarking of models for nonequilibrium dynamics.

Griffin, Travis D. [Univ. of Nevada, Reno, NV (Uni↗

Silicon Carbide Being Developed for High-Definition Television (HDTV) Transmitter Modules

Through a Space Act Agreement, the NASA Lewis Research Center has helped develop the base silicon carbide (SiC) epitaxial growth technology for Westinghouse's efforts to bring silicon carbide products to the marketplace. SiC is a high-temperature, high-voltage semiconductor that can deliver greater than three times the power of conventional silicon devices. The technology was initially disclosed in the 1994 R&T report. NASA Lewis High Temperature Integrated Electronics and Sensors (HTIES) team is developing SiC as a material for advanced semiconductor electronic device applications because SiC-based electronics and sensors can operate in hostile environments where conventional silicon-based electronics cannot function. SiC transmitters hold great promise for television stations because they can convert broadcasts from analog to digital signals. A modular solid-state design provides broadcasters with an option to gradually add modules, increasing the power of their transmitters as they expand their high-definition television (HDTV) coverage. Using these high-power transistors will significantly reduce the space needed for high-power transmitters at television stations and will offer a solid-state solution, reducing long-term maintenance costs. Thus, transmitter manufacturers will be able to abandon their reliance on tube-based technology for high-power transmitters and will be able to build smaller, high-power, solid-state transmitters.

Costello, Donald E.↗

The Need and Challenges for Distributed Engine Control

The presentation describes the challenges facing the turbine engine control system. These challenges are primarily driven by a dependence on commercial electronics and an increasingly severe environment on board the turbine engine. The need for distributed control is driven by the need to overcome these system constraints and develop a new growth path for control technology and, as a result, improved turbine engine performance.

Distributed control↗