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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
NASA NTRS1979

Automated Array Assembly Task In-depth Study of Silicon Wafer Surface Texturizing

Several aspects of silicon wafer surface texturizing were studied. A low cost cleaning method that utilizes recycled Freon in an ultrasonic vapor degreaser to remove organic and inorganic contaminants from the surface of silicon wafers as received from silicon suppliers was investigated. The use of clean dry air and high throughout wafer batch drying techniques was shown to lower the cost of wafer drying. A two stage texturizing process was examined for suitability in large scale production. Also, an in-depth gettering study with the two stage texturizing process was performed for the enhancement of solar cell efficiency, minimization of current versus voltage curve dispersion, and improvement in process reproducibility. The 10% efficiency improvement goal was exceeded for the near term implementation of flat plate photovoltaic cost reduction.

Jones, G. T.↗
NASA NTRS1980

Pioneer Venus Sounder Probe Neutral Gas Mass Spectrometer

A neutral gas mass spectrometer was flown to Venus as part of the Pioneer Venus Multiprobe to measure the composition of its lower atmosphere. The instrument, mounted in the Sounder Probe, was activated after the probe entered the top of the atmosphere, and it obtained data during the descent from 62 km to the surface. Atmospheric gases were sampled through a pair of microleaks, the effluent from which was pumped by a combination of ion and getter pumping. A pneumatically operated valve, controlled by the ambient atmospheric pressure, maintained the ion source pressure at a nearly constant value during descent while the atmospheric pressure varied by three orders of magnitude. A single focusing magnetic sector field mass spectrometer with mass resolution sufficient to reasonably separate argon from C3H4 at 40 amu provided the mass analysis and relative abundance measurements. A microprocessor controlled the operation of the mass spectrometer through a highly efficient peak-tip stepping routine and data compression algorithm that effected a scan of the mass spectrum from 1 to 208 amu in 64 sec while requiring an information rate of only 40 bits/sec to return the data to earth. A subscale height altitude resolution was thus obtained. Weight, size, and power requirements were minimized to be consistent with interplanetary flight contraints.

Hoffman, J. H.↗
NASA NTRS1980

Silicon solar cell process development, fabrication, and analysis

Solar cells from HEM, Dendritic Webs, and EFG ribbons were fabricated and characterized. The HEM solar cells showed only slight enhancement in cell performance after gettering steps (diffusion glass) were added. Dendritic webs from various growth runs indicated that performance of solar cells made from the webs was not as good as that of the conventional CZ cells. The EFG ribbons grown in CO ambient showed significant improvement in silicon quality.

Yoo, H. I.↗
NASA NTRS1981

A search for a nonbiological explanation of the Viking Labeled Release life detection experiment

The possibility of nonbiological reactions involving hydrogen peroxide being the source of the positive response detected by the Viking Labeled Release (LR) life detection experiment on the surface of Mars is assessed. Labeled release experiments were conducted in the LR Test Standards Module which replicates the Viking flight instrument configuration on analog Martian soils prepared to match the Viking inorganic analysis of Mars surface material to which an aqueous solution of hydrogen peroxide had been added. Getter experiments were also conducted to compare several reactions simultaneously in the presence and absence of UV radiation prior to the addition of nutrient. Hydrogen peroxide on certain analog soils is found to be capable of reproducing the kinetics and thermal information contained in the Mars data. The peroxide concentration necessary for this response, however, is shown to require a chemical stability or production rate much greater than seems likely in the Mars environment. As previous experiments have shown hydrogen peroxide to be the most likely nonbiological source of the positive LR response, it is concluded that the presence of a biological agent on Mars must not yet be ruled out.

Levin, G. V.↗
NASA NTRS1980

Molecular wake shield gas analyzer

Techniques for measuring and characterizing the ultrahigh vacuum in the wake of an orbiting spacecraft are studied. A high sensitivity mass spectrometer that contains a double mass analyzer consisting of an open source miniature magnetic sector field neutral gas analyzer and an identical ion analyzer is proposed. These are configured to detect and identify gas and ion species of hydrogen, helium, nitrogen, oxygen, nitric oxide, and carbon dioxide and any other gas or ion species in the 1 to 46 amu mass range. This range covers the normal atmospheric constituents. The sensitivity of the instrument is sufficient to measure ambient gases and ion with a particle density of the order of one per cc. A chemical pump, or getter, is mounted near the entrance aperture of the neutral gas analyzer which integrates the absorption of ambient gases for a selectable period of time for subsequent release and analysis. The sensitivity is realizable for all but rare gases using this technique.

Hoffman, J. H.↗
NASA NTRS1982

Magnetic shielding and vacuum test for passive hydrogen masers

Vibration tests on high permeability magnetic shields used in the SAO-NRL Advanced Development Model (ADM) hydrogen maser were made. Magnetic shielding factors were measured before and after vibration. Preliminary results indicate considerable (25%) degradation. Test results on the NRL designed vacuum pumping station for the ADM hydrogen maser are also discussed. This system employs sintered zirconium carbon getter pumps to pump hydrogen plus small ion pumps to pump the inert gases. In situ activation tests and pumping characteristics indicate that the system can meet design specifications.

Gubser, D. U.↗
NASA NTRS1981

Silicon solar cell process development, fabrication, and analysis

Work has progressed in fabrication and characterization of solar cells from ubiquitous crystallization process (UCP) wafers and LASS ribbons. Gettering tests applied to UCP wafers made little change on their performance compared with corresponding baseline data. Advanced processes such as shallow junction (SJ), back surface field (BSF), and multilayer antireflection (MLAR) were also applied. While BSF by Al paste had shunting problems, cells with SJ and BSF by evaporated Al, and MLAR did achieve 14.1% AMI on UCP silicon. The study of LASS material was very preliminary. Only a few cells with SJ, BSR, (no BSF) and MLAR were completed due to mechanical yield problems after lapping the material. Average efficiency was 10.7% AMI with 13.4% AMI for CZ controls. Relatively high minority carrier diffusion lengths were obtained. The lower than expected Jsc could be partially explained by low active area due to irregular sizes.

Yoo, H. I.↗
NASA NTRS1981

Heat pipes containing alkali metal working fluid

A technique for improving high temperature evaporation-condensation heat-transfer devices which have important and unique advantage in terrestrial and space energy processing is described. The device is in the form of a heat pipe comprising a sealed container or envelope which contains a capillary wick. The temperature of one end of the heat pipe is raised by the input of heat from an external heat source which is extremely hot and corrosive. A working fluid of a corrosive alkali metal, such as lithium, sodium, or potassium transfers this heat to a heat receiver remote from the heat source. The container and wick are fabricated from a superalloy containing a small percentage of a corrosion inhibiting or gettering element. Lanthanum, scandium, yttrium, thorium, and hafnium are utilized as the alloying metal.

Morris, J. F.↗
NASA NTRS1983

Thin N-I-P radiation resistant solar cells

Several sets of N-I-P sola cells were fabricated from high resistivity silicon to test the effectiveness of various methods for hardening these devices against radiation. Different substrate materials were used to provide information on the effects of dopant concentration, silicon type, and the presence of oxygen. In some cells, P-type float-zone refined silicon of 800, 8000 and 15,000 omega-cm resistivity was used to provide a basis for studying resistivity and purity effects. In other cells, N-type silicon (approximately 800 omega-cm) was used to allow a comparison of dopant type. Oxygen-rich, crucible-grown, silicon (approximately 100 omega-cm, p-type) will provide information on purity effects and defect gettering. Lithium was introduced into different types of silicon to determine if mobile ions can reduce radiation induced defects in high resistivity material. Thin cells (2 mil) were fabricated to study the effects of cell thickness and carrier injection on radiation damage. The electrical characteristics of the different sets of cells were measured, analyzed, and compared prior to shipment of the cells to NASA/Lewis for irradiation.

Meulenberg, A.↗
NASA NTRS1983

Process Research On Polycrystalline Silicon Material (PROPSM)

The performance-limiting mechanisms in large-grain (greater than 1 to 2 mm in diameter) polycrystalline silicon solar cells were investigated by fabricating a matrix of 4 sq cm solar cells of various thickness from 10 cm x 10 cm polycrystalline silicon wafers of several bulk resistivities. Analysis of the illuminated I-V characteristics of these cells suggests that bulk recombination is the dominant factor limiting the short-circuit current. The average open-circuit voltage of the polycrystalline solar cells is 30 to 70 mV lower than that of co-processed single-crystal cells; the fill-factor is comparable. Both open-circuit voltage and fill-factor of the polycrystalline cells have substantial scatter that is not related to either thickness or resistivity. This implies that these characteristics are sensitive to an additional mechanism that is probably spatial in nature. A damage-gettering heat-treatment improved the minority-carrier diffusion length in low lifetime polycrystalline silicon, however, extended high temperature heat-treatment degraded the lifetime.

Culik, J. S.↗
NASA NTRS1984

Electrical and Structural Characterization of Web Dendrite Crystals

Minority carrier lifetime distributions in silicon web dendrites are measured. Emphasis is placed on measuring areal homogeneity of lifetime, show its dependancy on structural defects, and its unique change during hot processing. The internal gettering action of defect layers present in web crystals and their relation to minority carrier lifetime distributions is discussed. Minority carrier lifetime maps of web dendrites obtained before and after high temperature heat treatment are compared to similar maps obtained from 100 mm diameter Czochralski silicon wafers. Such maps indicate similar or superior areal homogeneity of minority carrier lifetime in webs.

Schwuttke, G. H.↗
NASA NTRS1982

Design principles for high efficiency small-grain polysilicon solar cells, with supporting experimental studies

Design principles suggested here aim toward high conversion efficiency (greater than 15 percent) in polysilicon cells. The principles seek to decrease the liabilities of both intragranular and grain-boundary-surface defects. The advantages of a phosphorus atom concentration gradient in a thin (less than 50 microns) base of a p(+)/n(x)/n(+) drift-field solar cell, which produces favorable gradients in chemical potential, minority-carrier mobility and diffusivity, and recombination lifetime (via phosphorus gettering) are suggested. The degrading effects of grain boundaries are reduced by these three gradients and by substituting atoms (P, H, F or Li) for vacancies on the grain-boundary surface. From recent experiments comes support for the benefits of P diffusion down grain boundaries and, for quasi-grain-boundary-free and related structures. New analytic solutions for the n(x)-base include the effect of a power-law dependence between P concentration and lifetime. These provide an upper-bound estimate on the open circuit voltage. Finite-difference numerical solutions of the six Shockley equations furnish complete information about all solar-cell parameters and add insight concerning design.

Lindholm, F. A.↗
NASA NTRS1984

Recent developments in semiconductor research

Recent findings drawn from various laboratories focused toward a new understanding of the nature of crystal growth and how impurities are incorporated or excluded from the lattice were considered. From these findings a heuristic approach is given for improving the uniformity and charge carrier concentration of thin semiconductor films. Such improvement is considered essential to achieve respectable yield on large scale integrated circuits. A tentative conclusion is drawn which indicates that if the host compound crystal reactants are provided to the growing crystal surface in a reasonably stoichiometric manner, it is virtually impossible to include impurities into a growing crystal surface held at a sufficiently low temperature; impurities are incorporated into the crystal by gettering action of crystal defects located one and two monlayers beneath the growing surface. Devices in 3-5 semiconductors based on heterojunctions and two dimensional electron gases are noted and reliability concerns are voiced. Alternatives and novel device structures such as truly single crystal high quality silicon on insulator and beta silicon carbide devices are presented.

Yoder, M. N.↗
NASA NTRS1985

Electrical and Structural Characterization of Web Dendrite Crystals

Minority carrier lifetime distributions in silicon web dendrites are measured. Emphasis is placed on measuring areal homogeneity of lifetime, show its dependency on structural defects, and its unique change during hot processing. The internal gettering action of defect layers present in web crystals and their relation to minority carrier lifetime distributions is discussed. Minority carrier lifetime maps of web dendrites obtained before and after high temperature heat treatment are compared to similar maps obtained from 100 mm diameter Czochralski silicon wafers. Such maps indicate similar or superior areal homogeneity of minority carrier lifetime in webs.

Schwuttke, G. H.↗
NASA NTRS1985

Report of the Insect Development Group

Drosophila metanogaster was chosen as the insect species of choice, in regard to gravity response experiments involving normal reproduction and develop different strains. The specific gravity responses which might be affected by microgravity and are exhibited in normal reproduction and development include normal flight for courtship, mating and oviposition, tropisms for pupating or emergency of the adult, and crawling for gettering food by the larval instars at the organismic level. At the suborganismic elevel, it is believed that maturation of developing eggs in the virgin female and embryonic development of the developing egg could be affected by microgravity and warrant study.

Rockstein, M.↗
NASA NTRS1984

Oxygen in GaAs - Direct and indirect effects

Oxygen has profound effects on the key electronic properties and point defects of GaAs crystals. Thus, when added in the growth system, it decreases the free electron concentration and enhances the concentration of deep donors in the resulting crystals. Both of these effects are highly beneficial for achieving semi-insulating material and have been utilized for that purpose. They have been attributed to the tendency of oxygen to getter silicon impurities during crystal growth. Only recently, it has been found that oxygen in GaAs introduces also a midgap level, ELO, with essentially the same activation energy as EL2 but with four times greater electron capture cross section. The present report reassesses the electrical and optical properties of the midgap levels in GaAs crystals grown by the horizontal Bridgman (HB) and the Czochralski-LEC techniques. Emphasis is placed on the identification of the specific effects of ELO.

Gatos, H. C.↗
NASA NTRS1985

New outlook on control of crystalline and chemical perfection during growth of silicon

Significant progress has been made in our understanding of the Czochralski crystal growth process with the realization that the incorporation of oxygen into silicon is directly related to the internal gettering capability of wafers during device fabrication. It was also recognized that the electronic properties exhibited by silicon during various stages of device fabrication were significantly affected by the thermal history of the silicon during the post-growth cool-down period. Turbulent melt convection, induced by unavoidable destabilizing thermal gradients, was found to interfere with homogeneous dopant (and oxygen) incorporation and to influence markedly the dynamics of nonequilibrium point defects in the solidified silicon matrix during the cool-down period. In view of the unavoidability of destabilizing thermal gradients in conventional crystal growth configurations, melt stabilization through the application of magnetic fields is generally considered a viable approach. Control of heat input to the melt through heat pipe systems, as used during growth of germanium, cannot be applied to industrial growth of silicon. Recent studies have shown that heat exchange systems located coaxially about a growing crystal can be used to stabilize and control not only heat transfer in the grown crystal, but also in the melt adjacent to the solidification interface.

Witt, A. F.↗
NASA NTRS1985

High purith low defect FZ silicon

The most common intrinsic defects in dislocation-free float zone (FZ) silicon crystals are the A- and B-type swirl defects. The mechanisms of their formation and annihilation have been extensively studied. Another type of defect in dislocation-free FZ crystals is referred to as a D-type defect. Concentrations of these defects can be minimized by optimizing the growth conditions, and the residual swirls can be reduced by the post-growth extrinsic gettering process. Czochralski (Cz) silicon wafers are known to exhibit higher resistance to slip and warpage due to thermal stress than do FZ wafers. The Cz crystals containing dislocations are more resistant to dislocation movement than dislocated FZ crystals because of the locking of dislocations by oxygen atoms present in the Cz crystals. Recently a transverse magnetic field was applied during the FZ growth of extrinsic silicon. Resultant flow patterns, as revealed by striation etching and spreading resistance in Ga-doped silicon crystals, indicate strong effects of the transverse magnetic field on the circulation within the melt. At fields of 5500 gauss, the fluid flow in the melt volume is so altered as to affect the morphology of the growing crystal.

Kimura, H.↗