SCR Blocking Pulse Gate Amplifier-Patent
Silicon controlled rectifier pulse gate amplifier for blocking false gating caused by negative transient voltages
Holt, H. M.↗
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An electronically gated gamma and X-ray calibration scheme.
The construction and use are described for a radioactive calibration source that produces an electronic gating pulse when a calibration gamma ray is emitted and makes it possible to employ this source in many calibration or stabilizing tasks without the disadvantage of having to introduce extra counts into the unknown spectrum. The described source is radioactively safe, easy to construct, and has the ability of producing gating efficiencies as high as 98%.
Forrest, D. J.↗
Gated compressor, distortionless signal limiter
A distortionless gated compressor for limiting the amplitude of a signal so as not to produce undesired signal levels responsive thereto is disclosed. The gated compressor includes a distortionless multiplier which multiplies an AC signal from a factor defined by a DC control signal. The compressor includes a plurality of channels each responsive to a signal produced in response to the multiplier's output. When the signal supplied to any channel exceeds a prescribed level, the level of the DC control signal is reduced to reduce the multiplier's output level and thereby prevent the signal applied to any channel from exceeding its prescribed level.
Woodbury, R. C.↗
High resolution radiometric measurements of convective storms during the GATE experiment
Using passive microwave data from the NASA CV-990 aircraft and radar data collected during the Global Atmospheric Research Program Atlantic Tropical Experiment (GATE), an empirical model was developed relating brightness temperatures sensed at 19.35 GHz to surface rainfall rates. This model agreed well with theoretical computations of the relationship between microwave radiation and precipitation in the tropics. The GATE aircraft microwave data was then used to determine the detailed structure of convective systems. The high spatial resolution of the data permitted identification of individual cells which retained unique identities throughout their lifetimes in larger cloud masses and allowed analysis of the effects of cloud merger.
Fowler, G.↗
Development of a 1000V, 200A, low-loss, fast-switching, gate-assisted turn-off thyristor
The results of a program to develop a fast high power thyristor that can operate in switching circuits at frequencies of 10 to 20 kHz with very low power loss are given. Feasibility was demonstrated for a thyristor that blocks 1000V forward and reverse, conducts 200A, turns on in little more than 2 more microseconds with only 2A of gate drive, turns off in 3 microseconds with 2A of gate assist current and has an energy dissipation of only 12 mJ per pulse for a 20 microsecond half sine wave 200A pulse. Data were generated that clearly showed the tradeoffs that can be made between the turn off time and forward drop. The understanding of this relationship is necessary in the selection of deliverable thyristors with turn off times up to 7 microseconds to give improved efficiency in a series resonant dc to dc inverter application.
Schlegel, E. S.↗
Time-delay-and-integration charge-coupled devices using tin oxide gate technology
Doped tin oxide gates are used in a time-delay-and-integration (TDI) CCD scheme in an effort to develop a stable transparent gate technology. Design characteristics of the system are discussed, including 2 sections of 10 by 9 integration stages, four-phase buried channel construction, and 10 input parallel-in/serial-out output shift register at a video rate of 1.25 MHz. A quantum efficiency of 65% with smooth spectral response is attained by front surface imaging. The suitability of the system for the Landsat program is discussed in terms of TDI-CCD operating parameters.
Thompson, L. L.↗
A study of possible sea state information in the sample and hold gate statistics for the GEOS-3 satellite altimeter
The statistical variations in the sample gate outputs of the GEOS-3 satellite altimeter were studied for possible sea state information. After examination of a large number of statistical characteristics of the altimeter waveforms, it was found that the best sea predictor for H-1/3 in the range of 0 to 3 meters was the 75th percentile of sample and hold gate number 11.
Wells, W. T.↗
Prediction of field-time-dependent gate-oxide breakdown in MOS devices
The model for field-time-dependent breakdown in the gate oxide of MOS devices is extended and verified with experimental data. The model permits accelerated tests at high fields which can be used to predict gate-oxide breakdowns at much longer times at normal operating fields.
Li, S. P.↗
Deep convection on day 261 of GATE
The structural features of the deep convection observed on September 18, 1974, day 261 of the GARP Atlantic Tropical Experiment (GATE), as the ridge axis of a 700 mb wave passed the center of the GATE B-scale network are reported. Satellite and aircraft maps indicate the presence of clouds penetrating above 2.5 km into the middle troposphere organized in bands about 9 km apart and aligned roughly along the direction of the wind shear in the cloud layer. Radar echoes corresponding to cumulus convection of lifetime, peak height and peak rainfall rates on the orders of 30 min, 6 km and 1.3 mm/h, respectively, were observed to triple in number density as convergence at 950 hPa increased from 1.5 to 3 x 10 to the -5th/sec. The structural features of the radar echoes indicate that the day was similar to a mesoscale precipitation feature of Leary and Houe (1979), with the cluster consisting of many echoes appearing in succession. Data from aircraft penetrations of the deep convection reveal downdrafts accompanying the precipitation and updrafts immediately to their south. Shipboard and rawinsonde observations show that the convective downdrafts brought down air of low pseudo-equivalent potential temperature, with local surface convergence of up to 0.001/sec. Mean wind shears through the cloud layer to the top of a main cloud layer are found to be only 75% greater than those of Malkus (1958) for the Caribbean, with shears just above the cloud base several factors larger.
Warner, C.↗
Assessment of the quality of Gate area rainfall data from a Nimbus-5 radiometer
The quality of rainfall intensity estimates derived from passive microwave measurements by the electrically scanned microwave radiometer (ESMR-5) aboard the Nimbus 5 satellite are evaluated. The microwave measurements used are those coincident with the global atmospheric research program Atlantic tropical experiment (GATE). The ESMR 5 derived rainfall intensity estimates are compared with hourly averaged GATE radar rainfall measurements. It is determined from the transfer curves derived using the radar measurements as ground truth, that the ESMR 5 derived data consistently over estimates rainfall by a factor of approximately 1.4.
Knox, N.↗
Variable N-type negative resistance in an injection-gated double-injection diode
Double-injection (DI) switching devices consist of p+ and n+ contacts (for hole and electron injection, respectively), separated by a near intrinsic semiconductor region containing deep traps. Under proper conditions, these devices exhibit S-type differential negative resistance (DNR) similar to silicon-controlled rectifiers. With the added influence of a p+ gate appropriately placed between the anode (p+) and cathode (n+), the current-voltage characteristic of the device has been manipulated for the first time to exhibit a variable N-type DNR. The anode current and the anode-to-cathode voltage levels at which this N-type DNR is observed can be varied by changing the gate-to-cathode bias. In essence, the classical S-type DI diode can be electronically transformed into an N-type diode. A first-order phenomenological model is proposed for the N-type DNR.
Kapoor, A. K.↗
Assessment of the quality of GATE area rainfall data from a Nimbus-5 radiometer
The quality of rainfall intensity estimates derived from passive microwave measurements by the Electrically Scanned Microwave Radiometer (ESMR-5) aboard the NIMBUS-5 satellite was evaluated. The microwave measurements used are those coincident with the GARP (Global Atmospheric Research Program) Atlantic Tropical Experiment (GATE). ESMR-5 derived rainfall intensity estimates are compared with hourly averaged GATE radar rainfall measurements. Using the radar measurements as ground truth it is determined that with the transfer curve derived herein the ratio (ESMR-5 derived rain rate)/radar measured rain rate has a mean of approximately 0.62.
Knox, N.↗
Combinational logic for generating gate drive signals for phase control rectifiers
Control signals for phase-delay rectifiers, which require a variable firing angle that ranges from 0 deg to 180 deg, are derived from line-to-line 3-phase signals and both positive and negative firing angle control signals which are generated by comparing current command and actual current. Line-to-line phases are transformed into line-to-neutral phases and integrated to produce 90 deg phase delayed signals that are inverted to produce three cosine signals, such that for each its maximum occurs at the intersection of positive half cycles of the other two phases which are inputs to other inverters. At the same time, both positive and negative (inverted) phase sync signals are generated for each phase by comparing each with the next and producing a square wave when it is greater. Ramp, sync and firing angle controls signals are than used in combinational logic to generate the gate firing control signals SCR gate drives which fire SCR devices in a bridge circuit.
Dolland, C. R.↗
GaAs integrated digital-to-analogue convertor for control of power dual-gate FETs
The design, fabrication and performance of a TTL compatible 4-bit GaAs integrated digital-to-analog convertor with an output voltage between -2.8 V and +2.8 V are reported. This circuit has been especially designed to control the gain of power dual-gate FETs by applying a voltage on the capacitively terminated second gate.
Saunier, P.↗
Feasibility study for a generalized gate logic software simulator
Unit-delay simulation, event driven simulation, zero-delay simulation, simulation techniques, 2-valued versus multivalued logic, network initialization, gate operations and alternate network representations, parallel versus serial mode simulation fault modelling, extension of multiprocessor systems, and simulation timing are discussed. Functional level networks, gate equivalent circuits, the prototype BDX-930 network model, fault models, identifying detected faults for BGLOSS are discussed. Preprocessor tasks, postprocessor tasks, executive tasks, and a library of bliss coded macros for GGLOSS are also discussed.
Mcgough, J. G.↗
Characterization of silicon-gate CMOS/SOS integrated circuits processed with ion implantation
The procedure used to generate MEBES masks and produce test wafers from the 10X Mann 1600 Pattern Generator Tape using existing CAD utility programs and the MEBES machine in the RCA Solid State Technology Center are described. The test vehicle used is the MSFC-designed SC102 Solar House Timing Circuit. When transforming the Mann 1600 tapes into MEBES tapes, extreme care is required in order to obtain accurate minimum linewidths when working with two different coding systems because the minimum grid sizes may be different for the two systems. The minimum grid sizes are 0.025 mil for MSFC Mann 1600 and 0.02 mil for MEBES. Some snapping to the next grid is therefore inevitable, and the results of this snapping effect are significant when submicron lines are present. However, no problem was noticed in the SC102 circuit because its minimum linewidth is 0.3 mil (7.6 microns). MEBES masks were fabricated and wafers were processed using the silicon-gate CMOS/SOS and aluminum-gate COS/MOS processing.
Woo, D. S.↗
A gel-halo sample pellet: The best of both worlds? Stubby zones without a constricted sample gate
This reduces cell quantity, in the same way as does a narrower bore sample gate. The cells are confined to the center of the gate, inside a halo of electrolyte (D-1 buffer, here) immobilized by gel, which halo mechanically retains the ice pellet in position prior to thaw. The gel halo can be retained by the same gentle ridge as is contemplated for the ice pellet, and the ice pellet can be likewise retained within the gel halo.
Hinckley, J. O. N.↗
Diamondlike carbon films on semiconductors for insulated-gate technology
MIS structures are fabricated on p-type InP, GaAs, and Si substrated by direct ionization of 25-percent CH4 in Ar and ion-beam deposition of 70-nm-thick diamondlike films, followed by application of Al gate electrodes and ohmic contacts. The films are found to have bandgap 0.9-1.1 eV, resistivity 8.1 Mohm cm, breakdown field strength 1 MV/cm, and density 1.8 g/cu cm, to be thermally stable up to 400 C, and to undergo rapid decomposition above 450 C. The electrical properties of the MIS structures are significantly improved by sputter cleaning the substrates with a 1-keV 2-mA/sq cm Ar beam for 2 min at 300 microtorr prior to C-film deposition. The resulting structures have fixed insulator charge number densities 4 x 10 to the 12th/sq cm (InP), 7.5 x 10 to the 12th/sq cm (GaAs), and 9 x 10 to the 11th/sq cm (Si) and interface state densities (5, 200, and 0.5) x 10 to the 12th/ sq cm eV, respectively. It is suggested that the low optical bandgap and resistivity of the C films and the high insulator-charge and interface-state densities make them unstable as gate dielectrics for microelectronics.
Kapoor, V. J.↗