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At least 181 records · Page 10

All sources NASA NTRS DOE OSTI

DOE OSTI2021

Highly Selective Carbon-Supported Boron for Oxidative Dehydrogenation of Propane

Bulk boron materials, such as hexagonal boron nitride (h-BN), are highly selective catalysts for the oxidative dehydrogenation of propane (ODHP). Previous attempts to improve the productivity of these systems involved the immobilization of boron on silica and resulted in less selective catalysts. Here, we report that acid-treated, activated carbon-supported boron prepared via incipient wetness impregnation with boric acid (B/OAC) exhibits equal propylene selectivity and improved productivity (kg propylene kg cat -1 hr -1 ) as compared to h-BN. Characterization of the fresh and spent catalysts with infrared, Raman, X-ray photoelectron, and solid-state NMR spectroscopies reveals the presence of oxidized/hydrolyzed boron that is clustered on the surface of the support.

03 NATURAL GAS↗

NASA NTRS1989

Oxidation of chemically-vapor-deposited silicon nitride and single-crystal silicon

The present 1000 C and 1300 C oxidation tests on 111-oriented single-crystal Si and dense CVD Si3N4 notes the oxidation rates of the latter in wet O2, dry O2, wet inert gas, and steam atmosphere conditions to be several orders of magnitude lower than the rates for the former in identical atmospheric conditions. Although the parabolic rate constant for Si increased linearly as the water vapor pressure increased, the parabolic rate constant for Si3N4 exhibited a nonlinear dependency on water vapor pressure in the presence of O2. NO and NH3 formation at the reaction interface of Si3N4, and the counterpermeation of these reaction products, are noted to dominate reaction kinetics.

Choi, Doo J.↗

NASA NTRS1973

Examination of T-111 clad uranium nitride fuel pins irradiated up to 13,000 hours at a clad temperature of 990 C

The examination of 27 fuel pins irradiated for up to 13,000 hours at 990 C is described. The fuel pin clad was a tantalum alloy with uranium nitride as the nuclear fuel. Two nominal fuel pin diameters were tested with a maximum burnup of 2.34 atom percent. Twenty-two fuel pins were tested for fission gas leaks; thirteen pins leaked. Clad ductility tests indicated clad embrittlement. The embrittlement is attributed to hydrogen from an n,p reaction in the fuel. Fuel swelling was burnup dependent, and the amount of fission gas release was low, generally less than 0.5 percent. No incompatibilities between fuel, liner, and clad were in evidence.

Slaby, J. G.↗

NASA NTRS1987

Ceramic Parts for Turbines

Abilities of ceramics to serve as turbine blades, stator vanes, and other elements in hot-gas flow of rocket engines discussed in report. Ceramics prime candidates, because of resistance to heat, low density, and tolerance of hostile environments. Ceramics considered in report are silicon nitride, silicon carbide, and new generation of such ceramic composites as transformation-toughened zirconia and alumina and particulate- or whisker-reinforced matrices. Report predicts properly designed ceramic components viable in advanced high-temperature rocket engines and recommends future work.

Jones, R. D.↗

DOE OSTI2026

Pressurized Gas-Driven Elemental Redistribution Enables Ultrastable PtNi Catalysts for Heavy-Duty Vehicles

Gas-driven element redistribution, characterized by the preferential enrichment of one element at the surface relative to the bulk, is frequently observed in multicomponent alloys. Using L1 0 -ordered PtNi as a model system, we reveal that gas pressure plays a critical role in governing adsorption-driven surface composition during annealing in reducing gases: low pressure favors Pt surface segregation, while high pressure facilitates Ni surface enrichment. In this study, we developed a high-pressure nitriding (HPN) strategy that modulates the surface structure and composition of PtNi catalysts. The resulting HPN-PtNi exhibits enhanced performance and durability in membrane electrode assemblies for heavy-duty fuel cell applications, maintaining a high current density of 1.19 A cm −2 at 0.7 V after 90,000 voltage cycles. Through a combination of experimental and theoretical analyses, we reveal that the HPN process forms additional stabilizing Ni−N bonds and induces elemental redistribution with Ni surface enrichment and a Ni-deficient Pt subsurface. These modifications alter the atomic coordination environment of the ordered PtNi phase. This work presents a generalizable strategy to design robust and high-performing Pt-based catalysts by controlling gas-pressure-driven elemental redistribution and dopant incorporation.

30 DIRECT ENERGY CONVERSION↗

NASA NTRS1992

Crack healing behavior of hot pressed silicon nitride due to oxidation

It is shown that limited oxidation of an MgO-containing, hot-pressed silicon nitride ceramic at 800 deg C and above results in increased strength due to crack healing. Slight oxidation of the surface produces enstatite and cristobalite which fills in cracks. More extensive oxidation leads to strength degradation due to the formation of new flaws by the evolution of N2 gas at the surface. The apparent fracture toughness also increased at 800 deg C and above due to oxidation. Bonds formed between the two surfaces of the crack during oxidation leads to a reduction in stress intensity at the crack tip, suggesting that valid high-temperature toughness values cannot be obtained in an air environment. The increase in strength due to crack healing by oxidation can be achieved without compromising the fatigue properties of the silicon nitride ceramic.

Choi, S. R.↗

DOE OSTI2020

Mechanocatalytic Ammonia Synthesis over TiN in Transient Microenvironments

Environmentally friendly and energy-efficient ways to produce ammonia are essential to meet global food demands. In this study, a new approach for ammonia production at nominally ambient conditions is introduced. As proof of concept, ammonia is synthesized mechanocatalytically by ball milling titanium in a continuous gas flow. The ammonia synthesis reaction is proposed to follow a transient Mars–van Krevelen mechanism under mechanically activated conditions, where molecular nitrogen incorporation into the titanium lattice and titanium nitride hydrogenation occur in thermodynamically distinct environments. X-ray powder diffraction and X-ray absorption spectroscopy confirm the formation of titanium nitride from titanium and N2. The reactivity of nitrided titanium supports that lattice nitrogen plays a role in ammonia formation. The in situ formed titanium nitride is catalytically active, and the nitride regeneration reaction is determined to be the rate-limiting step. A preliminary technoeconomic analysis shows that this approach could be feasible for distributed ammonia production.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

NASA NTRS2000

Effects of Hydrogen on Tantalum Nitride Resistors

In this paper we report on observations of degradation of thin film Tantalum Nitride chip resistors in a hermetically sealed hybrid. The observations have been attributed to the reaction of residual Palladium with desorbed Hydrogen on the surface of the resistor film. Hydrogen gas has been observed to desorb from various sources within the sealed hybrid as a result of temperature elevation. The hydrogen gas has been reported to undergo a reaction with elements such as Platinum and Palladium causing device degradation in Gallium Arsenide Field Effect Transistors. The experimental procedures and data relating to this observation along with a discussion of available risk mitigation techniques will be presented.

Weiler, James↗

NASA NTRS2001

Defect Density Characterization of Detached-Grown Germanium Crystals

Several (111)-oriented, Ga-doped germanium crystals were grown in pyrolytic boron nitride (pBN) containers by the Bridgman and the detached Bridgman growth techniques. Growth experiments in closed-bottom pBN containers resulted in nearly completely detached-grown crystals, because the gas pressure below the melt can build up to a higher pressure than above the melt. With open-bottom tubes the gas pressure above and below the melt is balanced during the experiment, and thus no additional force supports the detachment. In this case the crystals grew attached to the wall. Etch pit density (EPD) measurements along the axial growth direction indicated a strong improvement of the crystal quality of the detached-grown samples compared to the attached samples. Starting in the seed with an EPD of 6-8 x 10(exp 3)/square cm it decreased in the detached-grown crystals continuously to about 200-500/square cm . No significant radial difference between the EPD on the edge and the middle of the crystal exists. In the attached grown samples the EPD increases up to a value of about 2-4 x 10(exp 4)/square cm (near the edge) and up to 1 x 10(exp 4)/square cm in the middle of the sample. Thus the difference between the detached- and the attached-grown crystals with respect to the EPD is approximately two orders of magnitude.

Schweizer, M.↗

NASA NTRS1999

Affordable Manufacturing Technologies Being Developed for Actively Cooled Ceramic Components

Efforts to improve the performance of modern gas turbine engines have imposed increasing service temperature demands on structural materials. Through active cooling, the useful temperature range of nickel-base superalloys in current gas turbine engines has been extended, but the margin for further improvement appears modest. Because of their low density, high-temperature strength, and high thermal conductivity, in situ toughened silicon nitride ceramics have received a great deal of attention for cooled structures. However, high processing costs have proven to be a major obstacle to their widespread application. Advanced rapid prototyping technology, which is developing rapidly, offers the possibility of an affordable manufacturing approach.

Bhatt, Ramakrishna T.↗

DOE OSTI2022

High-density polarization-induced 2D electron gases in N-polar pseudomorphic undoped GaN/Al 0.85 Ga 0.15 N heterostructures on single-crystal AlN substrates

The polarization difference and band offset between Al(Ga)N and GaN induce two-dimensional (2D) free carriers in Al(Ga)N/GaN heterojunctions without any chemical doping. A high-density 2D electron gas (2DEG), analogous to the recently discovered 2D hole gas in a metal-polar structure, is predicted in a N-polar pseudomorphic GaN/Al(Ga)N heterostructure on unstrained AlN. We report the observation of such 2DEGs in N-polar undoped pseudomorphic GaN/AlGaN heterostructures on single-crystal AlN substrates by molecular beam epitaxy. With a high electron density of ~4.3 ×10 13 /cm 2 that maintains down to cryogenic temperatures and a room temperature electron mobility of ~450 cm 2 /V s, a sheet resistance as low as ~320 Ω/$\Box$ is achieved in a structure with an 8 nm GaN layer. Finally, these results indicate significant potential of AlN platform for future high-power RF electronics based on N-polar III-nitride high electron mobility transistors.

42 ENGINEERING↗

NASA NTRS1980

3500-hour durability testing of ceramic materials for automotive gas turbine engines

A two-year durability program was performed by AiResearch Phoenix to evaluate four commercially available ceramic materials under simulated automotive gas turbine combustor discharge conditions. These conditions included extended cyclic thermal exposures up to 2500 F and 3500 hr. The four materials selected for evaluation were Norton NCX-34 hot pressed silicon nitride, AiResearch RBN 101 reaction bonded silicon nitride, Carborundum pressureless sintered alpha-SiC and Pure Carbon Co. (British Nuclear Fuels, Ltd.) Refel reaction sintered silicon carbide. These materials were initially exposed to 350 hr/1750 cycles at 1200 and 1370 C. Subsequent exposures to 1050, 2100 and 3500 hr were performed on those materials maintaining 50% of baseline strength after the initial exposure. Additional evaluations of exposed bars included dimensional and weight changes, dye penetrant, specific damping capacity changes, SEM fractography, and X-ray diffraction.

Carruthers, W. D.↗

NASA NTRS1997

Cosmic Ray Induced Degradation in X-Ray Detectors On Board the Near Earth Asteroid Rendezvous Spacecraft

The Near-Earth Asteroid Rendezvous (NEAR) mission is the first in NASA's new Discovery Program to explore the solar system. Launched in February 1996, the NEAR spacecraft will take a long cruise flight arriving at the asteroid 433 Eros in January 1999 for a one year orbiting survey operation. This long exposure to the space environment has already proven to be an additional complication for the x-ray spectrometer. The asteroid pointing detectors for the x-ray spectrometer are three gas-filled proportional counters with resolving power in the range of 1 keV. Therefore, to resolve the important but closely spaced magnesium, aluminum and silicon k alpha lines( 1.255, 1.487, 1.739 keV respectively), magnesium and aluminum balanced filters are used on two of the detectors. The x-ray florescence from the surface of Eros is stimulated by solar x-rays. A proportional counter and a silicon PIN detector are used to monitor the solar incident x-ray flux. The proportional counters are single wire gas filled beryllium lined steel tubes operating at about 1100 volt. The 25 cm(exp 2) optical window is one mil. thick beryllium. To define the detector's active region, two boron nitride disks were incorporated in the tube just outside window area. It appears from the space flight data that the space environment is creating a charge on these boron nitride disks which ultimately distorts the tube gain and resolution. This broadening of the photo peak makes it more difficult to identify weak peaks and so degrades the statistical accuracy for some very important elements such as sulfur, calcium and iron (2.307, 3.690, 6.403 keV respectively). If the broadening is severe enough in the low energy region, counts will be lost as the photo peak spreads below the lower level discriminator (0.7 keV).

Floyd, S. R.↗

NASA NTRS1999

Effects of Hydrogen on Tantalum Nitride Resistors

This document is a presentation about the investigation of drift reported in static frequency output from the analog circuit of a Multichannel Microwave Integrated circuit hybrid microelectronic filter module for space flight application. Electron Dispersion X-Ray Detector )EDAX) Analysis of the 35k ohm thin film Tantalum Nitride Chip resistors identified Palladium in the film. A catalytic reaction of Palladium and hydrogen produces mono atomic hydrogen. When the filter module cavities were filled with a 4 % hydrogen 96 % Nitrogen gas mixture at 25C and monitored the electrical performance for 24 hours. Some channels drifted in a similar pattern as the channel being investigated. Palladium was found on the resistors. The corrective actions taken are reviewed, which resulted in a stable circuit.

Weiler, James↗

DOE OSTI2024

Low-temperature etching of silicon oxide and silicon nitride with hydrogen fluoride

Etching of high aspect ratio features into alternating SiO 2 and SiN layers is an enabling technology for the manufacturing of 3D NAND flash memories. In this paper, we study a low-temperature or cryo plasma etch process, which utilizes HF gas together with other gas additives. Compared with a low-temperature process that uses separate fluorine and hydrogen gases, the etching rate of the SiO 2 /SiN stack doubles. Both materials etch faster with this so-called second generation cryo etch process. Pure HF plasma enhances the SiN etching rate, while SiO 2 requires an additional fluorine source such as PF 3 to etch meaningfully. Further, the insertion of H 2 O plasma steps into the second generation cryo etch process boosts the SiN etching rate by a factor of 2.4, while SiO 2 etches only 1.3 times faster. We observe a rate enhancing effect of H 2 O coadsorption in thermal etching experiments of SiN with HF. Ammonium fluorosilicate (AFS) plays a salient role in etching of SiN with HF with and without plasma. AFS appears weakened in the presence of H 2 O. Density functional theory calculations confirm the reduction of the bonding energy when NH 4 F in AFS is replaced by H 2 O.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

NASA NTRS1976

Gas-phase hydrogen permeation through alpha-titanium - Surface film and dimensional effects

The two techniques normally used to determine diffusivity and permeability in metals are considered and a description is presented of experiments which had been conducted to determine the direct effect of oxide and nitride films on the membrane surface as a function of location and thickness. The test specimens used in the experiments has been machined from commercially pure titanium rod. The results of the experiments show that hydrogen transport in alpha-titanium is partially or completely controlled by surface reactions depending upon membrane wall thickness and the composition and thickness of the surface film.

Shah, K. K.↗

NASA NTRS1975

Sublimation behavior of silicon nitride /Si3N4/ coated silicon germanium /SiGe/ unicouples

For the Multi-Hundred Watt (MHW) Radioisotope Thermoelectric Generator (RTG), the silicon germanium unicouples are coated with silicon nitride to minimize degradation mechanisms which are directly attributable to material sublimation effects. A program is under way to determine the effective vapor suppression of this coating as a function of temperature and gas environment. The results of weight loss experiments, using Si3N4 coated hot shoes (SiMo), operating over a temperature range from 900 C to 1200 C, are analyzed and discussed. These experiments were conducted both in high vacuum and at different pressures of carbon monoxide (CO) to determine its effect on the coating. Although the results show a favorable vapor suppression at all operating temperatures, the pressure of the CO and the thickness of the coating have a decided effect on the useful lifetime of the coating.

Stapfer, G.↗

DOE OSTI2024

Microwave-Mediated ammonia synthesis over Co 2 Mo 3 N catalysts at low pressures

The Haber-Bosch process for ammonia (NH 3 ) synthesis is a major contributor to greenhouse gas emissions and is responsible for > 2 % of the world’s energy consumption each year encouraging the need for alternative renewable-based options. Here, this study investigates an earth-abundant ternary metal nitride (i.e., Co 2 Mo 3 N) catalyst to develop a renewable-based NH 3 synthesis approach, utilizing an energy-efficient microwave-assisted route. Using a combination of spectroscopic and catalytic measurements coupled with surface analysis techniques, Co 2 Mo 3 N was evaluated as a stable and efficient NH 3 synthesis catalyst. Results presented here demonstrate NH 3 synthesis on Co 2 Mo 3 N at ~420 °C and ambient pressure yield ~0.7 mmolNH3.g cat -1 .h -1 and up to ~12 mmol NH3 .g cat -1 .h -1 at 28 bar under microwave irradiation. Co 2 Mo 3 N displayed an activation energy of ~72 kJ.mol -1 and yielded NH 3 following first-order kinetics with respect to both H 2 and N 2 . These studies illustrate the potential of using this catalyst for a sustainable, cost-effective, and environmentally friendly approach to producing NH 3 .

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗