Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “gallium oxide”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

178 records · Page 10
All sourcesNASA NTRSDOE OSTI
NASA NTRS2018

Effect of Radiation on Biologically Active Glasses

Multifunctional hydroxyapatites single crystals have been studied for their applications as the laser host material since past several decades. It is only recently their potential has been evaluated for bioactive materials. In the past researches, Czochralski and flux growth methods have been utilized to achieve single crystals. We have used low temperature processing techniques for synthesis. Organic melt was used to achieve oriented fibers by the directional solidification method. This organic treated material has different characteristics than coarsened oxide materials. Our approach involved low temperature processing using nano engineered powders of the material system Na2O-K2O-CaO- MgO-SrO-SiO2. Also, borates were processed by sintering and grain growth. Effect of -ray was studied by measuring the electrical characteristics of radiated samples. Our experiments to further improve mechanical characteristics indicate that substitution of calcium with some other elements such as gallium have great potential to improve the radiation hardening and mechanical properties of bones.

Tufail, Areeba↗
NASA NTRS1984

Conceptual design of a hybrid Ge:Ga detector array

For potential applications in space infrared astronomy missions such as the Space Infrared Telescope Facility and the Large Deployable Reflector, integrated arrays of long-wavelength detectors are desired. The results of a feasibility study which developed a design for applying integrated array techniques to a long-wavelength (gallium-doped germanium) material to achieve spectral coverage between 30 and 200 microns are presented. An approach which builds up a two-dimensional array by stacking linear detector modules is presented. The spectral response of the Ge:Ga detectors is extended to 200 microns by application of uniaxial stress to the stack of modules. The detectors are assembled with 1 mm spacing between the elements. Multiplexed readout of each module is accomplished with integration sampling of a metal-oxide-semiconductor (MOS) switch chip. Aspects of the overall design, including the anticipated level of particle effects on the array in the space environment, a transparent electrode design for 200 microns response, estimates of optical crosstalk, and mechanical stress design calculations are included.

Parry, C. M.↗
DOE OSTI2020

Ti- and Fe-related charge transition levels in $β$ – Ga 2 O 3

Here, deep-level transient spectroscopy measurements on $β$ – Ga 2 O 3 crystals reveal the presence of three defect signatures labeled $E$ 2a , $E$ 2b , and $E$ 3 with activation energies at around 0.66 eV, 0.73 eV, and 0.95 eV below the conduction band edge. Using secondary ion mass spectrometry, a correlation between the defect concentration associated with $E$ 3 and the Ti concentration present in the samples was found. Particularly, it is found that $E$ 3 is the dominant Ti-related defect in $β$ – Ga 2 O 3 and is associated with a single Ti atom. This finding is further corroborated by hybrid functional calculations that predict Ti substituting on an octahedral Ga site, denoted as Ti GaII , to be a good candidate for $E$ 3 . Moreover, the deep level transient spectroscopy results show that the level previously labeled $E$ 2 and attributed to Fe substituting on a gallium site (FeGa) consists of two overlapping signatures labeled E2a and E2b. We tentatively assign $E$ 2a and $E$ 2b to Fe substituting for Ga on a tetrahedral or an octahedral site, respectively.

36 MATERIALS SCIENCE↗
NASA NTRS1988

Development of a unit cell for a Ge:Ga detector array

Two modules of gallium-doped germanium (Ge:Ga) infrared detectors with integrated multiplexing readouts and supporting drive electronics were designed and tested. This development investigated the feasibility of producing two-dimensional Ge:Ga arrays by stacking linear modules in a housing capable of providing uniaxial stress for enhanced long-wavelength response. Each module includes 8 detectors (1x1x2 mm) mounted to a sapphire board. The element spacing is 12 microns. The back faces of the detector elements are beveled with an 18 deg angle, which was proved to significantly enhance optical absorption. Each module includes a different silicon metal-oxide semiconductor field effect transistor (MOSFET) readout. The first circuit was built from discrete MOSFET components; the second incorporated devices taken from low-temperature integrated circuit multiplexers. The latter circuit exhibited much lower stray capacitance and improved stability. Using these switched-FET circuits, it was demonstrated that burst readout, with multiplexer active only during the readout period, could successfully be implemented at approximately 3.5 K.

Source record↗
DOE OSTI2022

Electrochemistry of Praseodymium in Aqueous Solution Using a Liquid Gallium Cathode

We report the electrochemistry of liquid Ga electrodes in aqueous media was examined in the presence of praseodymium acetate (PrOAc) as an alternate path for low temperature reduction of rare earth elements (REE). This study investigated the aqueous electrochemistry of Ga with and without REEs (Pr). Cyclic voltammetry experiments showed that in the presence of PrOAc, an order of magnitude increase in cathodic current was observed for the Ga electrode, compared to that in the absence of Pr. Decrease in the reduction current with the increase of scan rate, with and without Pr, suggests catalytic reactions following electron transfer, which was attributed to the Ga 2 O disproportionation reaction. Chronoamperometric experiments performed in Pr containing solutions formed a precipitate. Over 50% of the Pr ions from the aqueous electrolyte were immobilized in the precipitate; a solid Ga-rich phase. Formation of this precipitate was only possible when Ga oxidation was induced. This condition was achieved by circulation of liquid Ga from the pool via external pump and returned dropwise to the liquid Ga pool. When the collected precipitate was leached in dilute HCl, Pr was released with H 2 evolved as a byproduct, and Ga returned to its initial liquid metallic state. These preliminary results show encouraging new routes that could be applied for the recovery of diluted REE leachates, such as those obtained from magnets, coal fly ash, and ores.

25 ENERGY STORAGE↗
DOE OSTI2021

Topographic and nanomechanical mapping of plutonium surfaces

Atomic force microscopy of gallium-stabilized δ-phase plutonium coupons has been used to map their topography and qualitative mechanical character, including Derjaguin-Muller-Toporov modulus, adhesion, deformation, and dissipation. Initial topographical results demonstrate that the plutonium surface is considerably rough and heterogeneous. Qualitative nanomechanical mapping revealed distinct striation patterns that are not observed in the topography images. Further investigation of the striations in the nanomechanical modes of imaging suggest that they are not measurement artifacts, or plutonium specific features. Similar investigations of stainless steel surfaces established a strong correlation between the mechanical working of the surface (i.e. cutting and grinding) and the appearance of the striations. Reimaging of the plutonium surface after moderate oxidation occurring within an inert Ar atmosphere (~1 ppm O 2 ) over the course of 13 months revealed a diminished striation pattern. It is suggested that surface stress/strain induced by the mechanical working of the metal surfaces results in the patterns of variable modulus, adhesion, deformation, and dissipation, and that these patterns are affected by the chemical changes and aging of the plutonium surface.

36 MATERIALS SCIENCE↗
NASA NTRS1993

Cryogenic measurements of aerojet GaAs n-JFETs

The spectral noise characteristics of Aerojet gallium arsenide (GaAs) junction field effect transistors (JFET's) have been investigated down to liquid-helium temperatures. Noise characterization was performed with the field effect transistor (FET) in the floating-gate mode, in the grounded-gate mode to determine the lowest noise readings possible, and with an extrinsic silicon photodetector at various detector bias voltages to determine optimum operating conditions. The measurements indicate that the Aerojet GaAs JFET is a quiet and stable device at liquid helium temperatures. Hence, it can be considered a readout line driver or infrared detector preamplifier as well as a host of other cryogenic applications. Its noise performance is superior to silicon (Si) metal oxide semiconductor field effect transistor (MOSFET's) operating at liquid helium temperatures, and is equal to the best Si n channel junction field effect transistor (n-JFET's) operating at 300 K.

Goebel, John H.↗
DOE OSTI2021

Depth-resolved cathodoluminescence and surface photovoltage spectroscopies of gallium vacancies in β-Ga 2 O 3 with neutron irradiation and forming gas anneals

The gallium vacancy is one of the dominant native point defects in β-Ga 2 O 3 , one that, together with its complexes, can have a major effect on free carrier densities and transport in this wide bandgap semiconductor. We used a combination of depth-resolved cathodoluminescence spectroscopy and surface photovoltage spectroscopy to identify the optical and energy-level properties of these defects as well as how their defect densities and spatial distributions vary with neutron irradiation and temperature-dependent-forming gas anneals. These studies reveal optical signatures that align closely with theoretical energy-level predictions. Likewise, our optical techniques reveal variations in these defect densities that are consistent with hydrogen passivation of gallium vacancies as a function of temperature and depth from the free Ga 2 O 3 surface. These techniques can help guide the understanding and control of dominant native point defects in Ga 2 O 3 .

42 ENGINEERING↗
NASA NTRS1977

Process for preparing liquid metal electrical contact device

The parts of an electrical contact device are treated by sputter etching to remove the parent metal oxide. Prior to exposure of the electrodes to any oxygen, a sacrificial metal is sputter deposited on the parts. Preferably this sacrificial metal is one that oxidizes slowly and is readily dissolved by the liquid metal. The sacrificial metal may then be removed from unwanted areas. The remainder of the ring and the probe to be wet by the liquid metal are submerged in the liquid metal or the liquid metal is flushed over these areas, preferably while they are being slightly abraded, unitl all the sacrificial material on these portions is wet by the liquid metal. In doing so the liquid metal dissolves the sacrificial metal and permanently wets the parent metal. Preferred materials used in the process and for the electrodes of electrical contact devices are high purity (99.0%) nickel or AISI type 304 stainless steel for the electrical contact devices, gallium as the liquid metal, and gold as the sacrificial material.

Lovell, R. R.↗
DOE OSTI2022

External charge compensation in etched gallium nitride measured by x-ray photoelectron spectroscopy

Electronic states at GaN surfaces and at regrowth and heteroepitaxy interfaces inhibit electronic device performance. Understanding electronic state configuration at the GaN surface is, therefore, crucial for the development of GaN-based devices, which are currently of considerable interest in power electronic applications. GaN and other wurtzite III-nitrides possess large spontaneous polarization along the c-axis, producing a bound sheet charge at the surface, which affects the electronic state configuration through the formation of internal and external compensation charges. Defects induced by conventional plasma-based dry etching methods may inhibit the internal screening of this bound charge and thus increase the concentration of external charged states. The surface band bending of n-type Ga-face GaN (0001) was measured with x-ray photoelectron spectroscopy after inductively coupled plasma etching to investigate the impact of dry etching on external charge compensation. GaN samples were etched using inductively coupled plasma with varying rf power and a novel plasma-enhanced atomic layer etching method using an oxidation, fluorination, and ligand-exchange mechanism. The band bending varied from 0.0 to 0.8 ± 0.1 eV for the samples measured.

Hatch, Kevin A. (ORCID:0000000283118623)↗
DOE OSTI2026

Enhanced Catalytic Dechlorination of Polyvinyl Chloride (PVC) and H2 Production Enabled by Synergistic Gaδ+/Ga0 Active Sites in Liquid Metal Particles

Polyvinyl chloride (PVC) is ubiquitous yet challenging to recycle due to its tendency to thermally decompose above 250 °C, releasing toxic, corrosive chlorinated compounds, and its inability to melt. Here, we report a catalytic strategy for PVC upcycling at 160 °C using gallium liquid metal particles (Ga-LMP) featuring a dynamic Ga-GaOOH core–shell architecture. These catalysts enable concurrent dechlorination and hydrogen evolution, yielding up to 7% H2 (based on initial hydrogen atoms in PVC) along with a highly dechlorinated (>95%) carbonaceous solid and aqueous HCl. Mechanistic investigations combining X-ray photoelectron spectroscopy, infrared spectroscopy, solid-state NMR, inelastic neutron scattering, and ab initio molecular dynamics reveal a synergistic interplay between Gaδ+ sites in the GaOOH shell and metallic Ga0 in the core. Cationic Ga initiates C–Cl bond activation and HCl formation, while progressive reduction of the shell exposes Ga0 sites that promote C–H activation and H2 evolution. Control experiments with a Ga salt and bulk Ga liquid metal confirmed that neither oxidation state alone can achieve both transformations efficiently. This work establishes a dynamic dual-site paradigm for liquid metal catalysis, in which the in situ evolution and coexistence of oxidized and metallic species enable sequential and cooperative bond activation pathways. These findings provide a general design principle for novel liquid metal catalysts that target challenging polymer transformations under mild conditions.

Zingg, Benjamin [ORNL] (ORCID:0009000914530153)↗
DOE OSTI2020

Plutonium Dedicated Surface Probe Microscopy Capability

An atomic force microscope (AFM) equipped with gas dosing capabilities and a scanning tunneling microscope (STM) housed within a vacuum chamber with Pu sputtering capabilities and the potential for rapid heating via electron bombardment have been devised for investigations of Pu surface aging (such as oxidation, corrosion, and self-irradiation damage), reactivity, and rapid heating. These instruments are capable of probing Pu surface areas ranging from a fractions of nm2 (STM) to hundreds of μm2 (AFM) to obtain three dimensional imaging of surface microstructure and morphology, as well as mapping of the local electronic structure (i.e., the occupied and unoccupied electronic states), surface chemical, and mechanical properties. A detailed description of our surface probe microscopy (SPM) capability, specifically designed for handling of Pu coupons is given in the references. In FY20, four tasks have been undertaken: Resumed maintenance of Pu AFM and modification of STM capabilities including calibration, annual measurement of Pu surface, and implementation of additional instrumentation for rapid heating effort; Analyzed AFM FY19 gas dosing experiment data of 7 at% gallium-stabilized δ-phase Pu (δ-Pu) coupon; Determined the direction of future gas dosing experiments to investigate reversibility of surface features; and, Published a paper titled "Effects of ion sputtering on plutonium surfaces" in the Journal of Nuclear Materials.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2020

A self-healing liquid metal anode with PEO-Based polymer electrolytes for rechargeable lithium batteries

In this study, a Ga-Sn liquid metal alloy material is demonstrated as a self-healing anode system due to its fluidity via operando synchrotron-based transmission X-ray microscopy and X-ray diffraction experiments. Cracks formed due to volume expansions can be recovered by the fluidity of the liquid metals. By incorporating with a poly(ethylene oxide) (PEO)-based electrolyte at 60°C, the Ga-Sn anode shows a reversible lithium insertion and extraction process with a high initial discharge specific capacity of 682 mAh g -1 , followed by delivering a capacity of 462 mAh g -1 in the second cycle at C/20 rate. Furthermore, compared with its solid counterparts, the Ga-Sn liquid metal anode demonstrates a better capability to maintain its mechanical integrity and better contact with PEO solid electrolytes due to its advantageous features of the liquid. This study suggests a potential strategy to use liquid metal alloys with polymer solid electrolyte to solve the anode challenges in rechargeable lithium batteries.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Proton radiation effects on electronic defect states in MOCVD-grown (010) β -Ga 2 O 3

The impact of 1.8 MeV proton irradiation on metalorganic chemical vapor deposition grown (010) β-Ga 2 O 3 Schottky diodes is presented. It is found that after a 10.8 × 10 13 cm –2 proton fluence the Schottky barrier height of (1.40 ± 0.05 eV) and the ideality factor of (1.05 ± 0.05 ) are unaffected. Capacitance–voltage extracted net ionized doping curves indicate a carrier removal rate of 268 ± 10 cm –1 . The defect states responsible for the observed carrier removal are studied through a combination of deep level transient and optical spectroscopies (DLTS/DLOS) as well as lighted capacitance–voltage (LCV) measurements. The dominating effect on the defect spectrum is due to the E c -2.0 eV defect state observed in DLOS and LCV. This state accounts for ~75 % of the total trap introduction rate and is the primary source of carrier removal from proton irradiation. Of the DLTS detected states, the E c -0.72 eV state dominated but had a comparably smaller contribution to the trap introduction. These two traps have previously been correlated with acceptor-like gallium vacancy-related defects. Several other trap states at E C -0.36, E C -0.63, and E C -1.09 eV were newly detected after proton irradiation, and two pre-existing states at E C -1.2 and E C -4.4 eV showed a slight increase in concentration after irradiation, together accounting for the remainder of trap introduction. However, a pre-existing trap at E c -0.40 eV was found to be insensitive to proton irradiation and, therefore, is likely of extrinsic origin. Furthermore, the comprehensive defect characterization of 1.8 MeV proton irradiation damage can aid the modeling and design for a range of radiation tolerant devices.

42 ENGINEERING↗
DOE OSTI2024

Electron irradiation effects on the optical properties of Hf- and Zn-doped β -Ga 2 O 3

Optical and electrical properties of Hf- and Zn-doped β-Ga 2 O 3 samples, which are n-type and insulating, respectively, were altered via high-energy electron irradiation at 2.5 or 0.5 MeV. The β-Ga 2 O 3 :Hf samples irradiated with 2.5 MeV electrons experienced a color change from blue to yellow and a large drop in conductivity, attributed to the creation of gallium vacancies, which compensate donors. This irradiation resulted in the absence of free carrier absorption and the presence of Cr 3+ photoluminescence (PL). PL mapping prior to irradiation revealed optically active ZnO precipitates that formed during the growth of β-Ga 2 O 3 :Zn. These precipitates have a 384 nm (3.23 eV) stacking fault emission in the core; in the outer shell of the precipitate, the PL blue-shifts to 377 nm (3.29 eV) and a broad defect band is observed. After 0.5 MeV electron irradiation, the defect band broadened and increased in intensity. The blue PL band (435 nm) of β-Ga 2 O 3 was enhanced for both Hf- and Zn-doped samples irradiated with 0.5 MeV. This enhancement is correlated with an increase in oxygen vacancies.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Gallium vacancy formation in oxygen annealed β-Ga 2 O 3

Here, the formation and character of gallium vacancies (V Ga ) and their complexes in near surface and bulk regions of single crystal β-Ga 2 O 3 were explored using unintentionally doped single crystals grown by the Czochralski method. As-grown and O 2 annealed (up to 1550 °C) samples were investigated using positron annihilation spectroscopy (PAS) to study the top 0.05–6 μm, and also current–voltage measurements and infrared (IR) spectroscopy, with hydrogenated samples to probe V Ga , to study the bulk. After annealing in O 2 > 1000 °C, the β-Ga 2 O 3 resistivity begins increasing, up to ~10 9 Ω cm for 1550 °C treatment, with the top 0.5 mm being many orders of magnitude more resistive. PAS measurements of the top 6 μm (S values) and very near surface 200 nm (diffusion length, L) indicate differential behavior as a function of peak annealing temperature. At least four temperature regimes of behavior are described. V Ga are present in the bulk after growth, but considerable changes occur upon annealing at a temperature ≈1000 °C, where L and S decrease simultaneously, suggesting an increasing defect concentration (L) but a decreasing defect volume (S). Annealing at a temperature ≈1400 °C increases S again, showing an increasing volume concentration of V Ga , with IR absorption showing a large signature of V Ga -2H, indicative of increased V Ga formation that was not present when annealing at a temperature ≈1000 °C. These results suggest that defect changes from annealing in oxygen are depth dependent, and that V Ga configuration may not be the same near the oxygen-exposed surface of the sample and in the bulk.

74 ATOMIC AND MOLECULAR PHYSICS↗