Thermodynamic behavior of trivalent gallium, aluminum and iron distributions in garnets
Data on distribution of ions of gallium, aluminum, and iron among tetrahedral and octahedral sites in garnets
Ghose, S.↗
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Fundamental studies of the metallurgical, electrical, and optical properties of gallium phosphide Quarterly progress report, 1 Apr. - 30 Jun. 1969
Barrier diodes formed by nickel evaporation on undoped gallium phosphide by vertical liquid epitaxy
Pearson, G. L.↗
Fundamental studies of the metallurgical, electrical and optical properties of gallium phosphide Quarterly progress report, 1 Jul. - 30 Sep. 1969
Preparation of ohmic contacts from alloying germanium and gallium phosphide
Source record↗
Current controlled negative resistance in n-type gallium arsenide.
Negative differential resistance effect producing relaxation type oscillations in n-type gallium arsenide
Hughes, W. E.↗
Visible light electroluminescent diodes of indium-gallium phosphide
Vapor deposition and acceptor impurity diffusion techniques are used to prepare indium-gallium phosphide junctions. Certain problems in preparation are overcome by altering gas flow conditions and by increasing the concentration of phosphine in the gas. A general formula is given for the alloy's composition.
Clough, R.↗
Friction and contact resistance for low-speed gallium-lubricated sliding electrical contacts of beryllium in vacuum
Reducing friction and contact resistance of sliding electrical contacts of beryllium by gallium lubrication in vacuum
Przybyszewski, J. S.↗
Friction and contact resistance for gallium- lubricated low-speed copper sliprings in vacuum
Friction and contact resistance for gallium lubricated low speed copper sliprings in vacuum
Przybyszewski, J.↗
Design and fabrication of gallium phosphide rectifiers
Design and fabrication of gallium phosphide rectifiers
Epstein, A. S.↗
An on-board spacecraft optical data processing system using paraboloidal mirror segments and a gallium arsenide laser
Onboard spacecraft optical data processing system using paraboloidal mirror segments and gallium arsenide laser
Abidi, A. S. H.↗
Tungsten as a slipring material for use with gallium lubrication in ultrahigh vacuum
Tungsten hemisphere against tungsten disk slipring assembly with liquid gallium lubrication in ultrahigh vacuum
Przybyszewski, J. S.↗
Method of changing the conductivity of vapor deposited gallium arsenide by the introduction of water into the vapor deposition atmosphere Patent
Water content in vapor deposition atmosphere for forming n-type and p-type junctions of zinc doped gallium arsenide
Ellis, S. G.↗
Operation of low speed gallium lubricated tungsten slipring assembly in vacuum for 500 hours
Performance of gallium lubricated slipring assembly in ultrahigh vacuum for 500 hours
Przybyszewski, J. S.↗
The mechanical properties of silver-gallium oxide alloy single crystals produced by internal oxidation
Gallium oxide particles effects on Ag-Ga matrix single crystals critical resolved shear stress
Ansell, G. S.↗
Epitaxial gallium arsenide wafers
The preparation of GaAs epitaxial layers by a vapor transport process using AsCl3, Ga and H2 was pursued to provide epitaxial wafers suitable for the fabrication of transferred electron oscillators and amplifiers operating in the subcritical region. Both n-n(+) structures, and n(++)-n-n(+) sandwich structures were grown using n(+) (Si-doped) GaAs substrates. Process variables such as the input AsCl3 concentration, gallium temperature, and substrate temperature and temperature gradient and their effects on properties are presented and discussed.
Black, J. F.↗
Effect of polarity of electric current on friction behavior of two gallium-lubricated tantalum slipring assemblies
Computer-processed data from low-speed (10 rpm) slipring experiments with two similar (but of opposite polarity) gallium-lubricated tantalum slipring assemblies (hemisphere against disk) carrying 50 amperes dc in vacuum (10 to the minus 9th power torr) showed that the slipring assembly with the anodic hemisphere had significantly lower peak-to-peak values and standard deviations of coefficient-of-friction samples (a measure of smoothness of operation) than the slipring assembly with the cathodic hemisphere. Similar data from an experiment with the same slipring assemblies running currentless showed more random differences in the frictional behavior between the two assemblies.
Przybyszewski, J.↗
The creep properties of dispersion-strengthened silver-gallium oxide alloys.
Steady-state creep rates were measured for two preparations of a dispersion-strengthened alloy of silver with 1 mol % gallium oxide. One preparation, an internally-oxidized type, had a grain size 40 times that of the other preparation, which was a consolidated-powder type of alloy. The temperature and stress dependence of the steady-state creep rate differs widely for the two alloys and must be attributed to the difference in grain size. The activation energy for steady-state creep of the internally-oxidized coarse grained material is near that for self-diffusion of silver, which strongly indicates a creep process controlled by dislocation climb.
Lenel, F. V.↗
The electrical properties of 60 keV zinc ions implanted into semi-insulating gallium arsenide
The electrical behavior of zinc ions implanted into chromium-doped semiinsulating gallium arsenide was investigated by measurements of the sheet resistivity and Hall effect. Room temperature implantations were performed using fluence values from 10 to the 12th to 10 to the 15th power/sq cm at 60 keV. The samples were annealed for 30 minutes in a nitrogen atmosphere up to 800 C in steps of 200 C and the effect of this annealing on the Hall effect and sheet resistivity was studied at room temperature using the Van der Pauw technique. The temperature dependence of sheet resistivity and mobility was measured from liquid nitrogen temperature to room temperature. Finally, a measurement of the implanted profile was obtained using a layer removal technique combined with the Hall effect and sheet resistivity measurements.
Littlejohn, M. A.↗
Development of gallium aluminum phosphide electroluminescent diodes
Work done on the development of gallium aluminum phosphide alloys for electroluminescent light sources is described. The preparation of this wide band gap semiconductor alloy, its physical properties (particularly the band structure, the electrical characteristics, and the light emitting properties) and work done on the fabrication of diode structures from these alloys are broadly covered.
Chicotka, R. J.↗