Complex impedance characteristics of low- resistance bismuth films.
Low resistance Bi thin film complex electrical impedance in IR range, stating methods and equivalent circuits for determining impedance
Howard, L. L.↗
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Technique for lowering the noise figure in RF amplifiers
Low-level RF amplifiers are operated at noise figures at or near the theoretical minimum, while maintaining high-gain stability. Formulas for the minimum amplifier noise figure value are derived from the analytical noise-figure expression involving the parameters of the equivalent circuit representing the actual system.
Bellomo, A. F.↗
Distortion of a narrow-band FM signal in a lossless abrupt-junction nonoverdriven varactor doubler
Narrow bandwidth FM signal distortion during multiplication in lossless varactor multiplier calculated, using equivalent circuit of frequency doubler
Grayzel, A. I.↗
Sneak paths in X-Y matrix arrays
Integrated image sensor matrix array derived from equivalent circuit to minimize sneak path effects
Osborn, D. C.↗
Piezoelectric effects in ferroelectric ceramics
Piezoelectric effects in ferroelectric ceramics using equivalent circuits and admittance matrices
Holland, R.↗
The impedance properties of dielectric-covered narrow radiating slots in the broad face of a rectangular waveguide
Dielectric covered narrow radiating slots in rectangular waveguide broad face, calculating impedance from equivalent circuits
Bailey, M. C.↗
Surface-state spectra from thick-oxide MOS tunnel junctions
The conductance and capacitance of thick-oxide MOS tunnel junctions (SiO2 thickness 40 to 65 A) have been measured from 35 Hz to 210 kHz. It is demonstrated that the use of a thick-oxide MOS tunnel junction makes it possible to obtain the surface-state data throughout the whole silicon band gap with better resolution and better sensitivity than the conventional MOS capacitance techniques. A slight departure from equilibrium may occur in the voltage range where large tunnel current flows. Corrections to the energy scale must be made in this voltage range. A method for the evaluation of the junction quality is discussed. The simplified equivalent circuits necessary for the calculation of surface-state data are constructed under various bias conditions by an approach different from that used in a previously published work. The present work supports the model that at least some of the observed surface states are a consequence of the diffusion of contact metals into the oxide.
Ma, T. P.↗
Nonlinear analysis of a family of LC tuned inverters
A family of four dc-to-square-wave LC tuned inverters are analyzed using singular point. Limit cycles and waveshape characteristics are given for three modes of oscillation: quasi-harmonic, relaxation, and discontinuous. An inverter in which the avalanche breakdown of the transistor emitter-to-base junction occurs is discussed and the starting characteristics of this family of inverters are presented. The LC tuned inverters are shown to belong to a family of inverters with a common equivalent circuit consisting of only three 'series' elements: a five-segment piecewise-linear current-controlled resistor, linear inductor, and linear capacitor.
Lee, F. C. Y.↗
A charging model for three-axis stabilized spacecraft
A charging model was developed for geosynchronous, three-axis stabilized spacecraft when under the influence of a geomagnetic substorm. The differential charging potentials between the thermally coated or blanketed outer surfaces and metallic structure of a spacecraft were determined when the spacecraft was immersed in a dense plasma cloud of energetic particles. The spacecraft-to-environment interaction was determined by representing the charged particle environment by equivalent current source forcing functions and by representing the spacecraft by its electrically equivalent circuit with respect to the plasma charging phenomenon. The charging model included a sun/earth/spacecraft orbit model that simulated the sum illumination conditions of the spacecraft outer surfaces throughout the orbital flight on a diurnal as well as a seasonal basis. Transient and steady-state numerical results for a three-axis stabilized spacecraft are presented.
Massaro, M. J.↗
Feasibility study for a generalized gate logic software simulator
Unit-delay simulation, event driven simulation, zero-delay simulation, simulation techniques, 2-valued versus multivalued logic, network initialization, gate operations and alternate network representations, parallel versus serial mode simulation fault modelling, extension of multiprocessor systems, and simulation timing are discussed. Functional level networks, gate equivalent circuits, the prototype BDX-930 network model, fault models, identifying detected faults for BGLOSS are discussed. Preprocessor tasks, postprocessor tasks, executive tasks, and a library of bliss coded macros for GGLOSS are also discussed.
Mcgough, J. G.↗
Experimentally determined factors influencing electrical coupling mechanisms
Measurements of the time-dependent electric field in the stratosphere and mesosphere above a thunderstorm have made it possible to construct an equivalent circuit model of a thunderstorm involving capacitive as well as resistive elements. The model illustrates how charge is coupled to the global circuit and how the circuit can be modulated. The average current from the thunderstorm cell to the global circuit is largely controlled by the rate of cloud-to-earth flashes, which can be affected in marginal cases by external influences. The combined effect of the earth's magnetic field and the extreme nonuniformity of mesospheric conductivity cause a large fraction of the current from nighttime thunderstorm to flow downward through the mesosphere in high-latitude regions, thus facilitating coupling between thunderstorms and high-latitude phenomena.
Hale, L. C.↗
GaAs dual-gate FET for operation up to K-band
A high-frequency equivalent-circuit model of a GaAs dual-gate FET and analytical expressions for the input/output impedances, transconductance, unilateral gain, and stability factor are presented. It is found that the gain of a dual-gate FET is higher than of a single-gate FET at low frequency but decreases faster as frequency increases because of the capacitive shunting effect of the second gate. A dual-gate power FET suitable for variable-gain-amplifier applications up to K-band has been developed. At 10 GHz, a 1.2-mm-gatewidth device has achieved an output power of 1.1 W with 10.5-dB gain and 31-percent power-added efficiency. At 20 GHz, the same device delivered an output power of 340 mW with 5.3-dB gain. At K-band, a dynamic-gain control range of up to 45 dB was obtained with an insertion phase change of no more than + or 2 degrees for the first 10 dB of gain control.
Kim, B.↗
High discharge rate characteristics of nickel-cadmium batteries for pulse load filtering
Several tests of specially fabricated nickel-cadmium batteries having circular disk type electrodes were considered. These batteries were evaluated as filter elements between a constant current power supply and a five hertz pulsed load demanding approximately twice the power supply current during the load on portion of the cycle. Short tests lasting 10,000 cycles were conducted at up to a 21 C rate and an equivalent energy density of over 40 Joules per pound. In addition, two batteries were subjected to 10 to the 7 charge/discharge cycles, one at a 6.5 C rate and the other at a 13 C rate. Assuming an electrode to battery weight ratio of 0.5, these tests represent an energy density of about 7 and 14 Joules per pound respectively. Energy density, efficiency, capacitance, average voltage, and available capacity were tracked during these tests. After 10 to the 7 cycles, capacity degradation was negligible for one battery and about 20% for the other. Cadmium electrode failure may be the factor limiting lifetime at extremely low depth of discharge cycling. The output was examined and a simple equivalent circuit was proposed.
Gearing, G. M.↗
Electrodynamic interactions
The electrodynamic interaction of long metallic tethers with the ionosphere is introduced. Due to the tether's motion across the Earth's field, a polarization electric field is generated along the tether. In a system like the Tethered Satellite System (TSS) where the tether is coated with dielectric and the electrical contact is between its two terminations and the ionosphere, the upper end termination will collect electrons and, in a passive system, the lower end termination will collect ions. Space charge regions will develop around the two terminations of the system, which can be at considerable potential with respect to the unperturbed ionospheric plasma and the current in the tether will be most significantly determined by local processes in such space charge regions. A qualitative view of the global perturbation induced by TSS in the ionosphere is outlined. One of the applications of electrodynamic tethers is that of using them as low frequency wave generators to communicate to the Earth. This application is briefly discussed. An equivalent circuit of the tether system is described. The basic equation of the circuit is given.
Dobrowolny, M.↗
Electromagnetic scattering from a class of open-ended waveguide discontinuities
A relatively simple high frequency analysis of electromagnetic scattering from a class of open-ended waveguide discontinuites was developed. The waveguides are composed of perfectly-conducting sections in which the electromagnetic field can be written as the sum of waveguide modes. Junctions are formed at the open end and also within interior regions where different sections are joined. The reflection and transmission properties of each junction are described in terms of a scattering matrix which is determined by combining the modal ray picture with high frequency techniques such as the Geometrical Theory of Diffraction (GTD), the Equivalent Current Method (ECM), and modifications of the Physical Theory of Diffraction (PTD). A new set of equivalent circuits are employed in this ECM analysis which leads to a simple treatment of many types of junction discontinuities. Also, a new procedure is presented to improve the efficiency of the aperture integration at the open end which is required in the PTD procedure for finding the fields radiated from (or coupled to) the open end. Once the scattering matrices are determined, they are then combined using a self-consistent multiple scattering method to obtain the total scattered fields.
Altintas, A.↗
AC impedance study of degradation of porous nickel battery electrodes
AC impedance spectra of porous nickel battery electrodes were recorded periodically during charge/discharge cycling in concentrated KOH solution at various temperatures. A transmission line model (TLM) was adopted to represent the impedance of the porous electrodes, and various model parameters were adjusted in a curve fitting routine to reproduce the experimental impedances. Degradation processes were deduced from changes in model parameters with electrode cycling time. In developing the TLM, impedance spectra of planar (nonporous) electrodes were used to represent the pore wall and backing plate interfacial impedances. These data were measured over a range of potentials and temperatures, and an equivalent circuit model was adopted to represent the planar electrode data. Cyclic voltammetry was used to study the characteristics of the oxygen evolution reaction on planar nickel electrodes during charging, since oxygen evolution can affect battery electrode charging efficiency and ultimately electrode cycle life if the overpotential for oxygen evolution is sufficiently low.
Lenhart, Stephen J.↗
Modeling of Some Coplanar Waveguide Discontinuities
Presented are lumped equivalent circuit models for several coplanar waveguide discontinuities such as an open circuit, a series gap, and a symmetric step, and their element values as a function of the discontinuity physical dimensions. The model element values are de-embedded from measured S-parameters. The frequency dependence of the effective dielectric constant was measured and compared to computed values.
Simons, Rainee N.↗
Channelized coplanar waveguide: Discontinuities, junctions, and propagation characteristics
A new variant of CPW which has been termed channelized CPW, CCPW, is presented. Measured and computed propagation characteristics are presented. Lumped equivalent circuit element values for a CCPW open circuit and right angle bend have been obtained. CCPW power divider junctions and a coax-to-CCPW in-phase, radial power divider are also presented.
Simons, Rainee N.↗