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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Electron Scattering from 1-Methyl-5-Nitroimidazole: Cross-Sections for Modeling Electron Transport through Potential Radiosensitizers

In this study, we present a complete set of electron scattering cross-sections from 1-Methyl-5-Nitroimidazole (1M5NI) molecules for impact energies ranging from 0.1 to 1000 eV. This information is relevant to evaluate the potential role of 1M5NI as a molecular radiosensitizers. The total electron scattering cross-sections (TCS) that we previously measured with a magnetically confined electron transmission apparatus were considered as the reference values for the present analysis. Elastic scattering cross-sections were calculated by means of two different schemes: The Schwinger multichannel (SMC) method for the lower energies (below 15 eV) and the independent atom model-based screening-corrected additivity rule with interferences (IAM-SCARI) for higher energies (above 15 eV). The latter was also applied to calculate the total ionization cross-sections, which were complemented with experimental values of the induced cationic fragmentation by electron impact. Double differential ionization cross-sections were measured with a reaction microscope multi-particle coincidence spectrometer. Using a momentum imaging spectrometer, direct measurements of the anion fragment yields and kinetic energies by the dissociative electron attachment are also presented. Cross-sections for the other inelastic channels were derived with a self-consistent procedure by sampling their values at a given energy to ensure that the sum of the cross-sections of all the scattering processes available at that energy coincides with the corresponding TCS. This cross-section data set is ready to be used for modelling electron-induced radiation damage at the molecular level to biologically relevant media containing 1M5NI as a potential radiosensitizer. Nonetheless, a proper evaluation of its radiosensitizing effects would require further radiobiological experiments.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2020

Analytic model of electron transport through and over non-linear barriers

Tunneling barriers are an essential component of electron sources, sensors, detectors, and vacuum nanoelectronics, and a pivotal factor in their performance, but the barriers themselves routinely depart from the analytic models used to model their behavior. Here, a new formalism is developed to analytically and accurately model emission through and over barriers associated with depletion layers, nanotip barriers, and MIM structures. The transmission probability for depletion layer and metal-insulator-metal (MIM) and metaloxide-semiconductor (MOS) barriers is accurately modeled as the electron energy exceeds the barrier height using approaches designed for rapid implementation demanded by simulation codes, and extensible to general barriers. The models supersede conventional thermal and field models in depletion and MIM/MOS barrier studies. Thermal-field methods are used to treat the transmission probability, and shape factor methods to treat the tunneling factor. Analytic formulae for current density are obtained. The methods ease device simulation and characterization of current-voltage relations for emerging technologically interesting barriers with better accuracy.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
NASA NTRS2005

Electronic Transport through Self Assembled Thiol Molecules: Effect of Monolayer Order, Dynamics and Temperature

We present the charge transport and tunneling conductance of self assembled organic thiol molecules and discuss the influence of order and dynamics in the monolayer on the transport behavior and the effect of temperature. Conjugated thiol molecular wires and organometals such as terpyridine metal complexes provide a new platform for molecular electronic devices and we study their self assembly on Au(111) substrates by the scanning tunneling microscope. Determining the organization of the molecule and the ability to control the nature of its interface with the substrate is important for reliable performance of the molecular electronic devices. By concurrent scanning tunneling microscopy and spectroscopy studies on SAMs formed from oligo (phenelyne ethynelyne) monolayers with and without molecular order, we show that packing and order determine the response of a self assembled monolayer (SAM) to competing interactions. Molecular resolution STM imaging in vacuum shows that the OPES adopt an imcommensurate SAM structure on Au(111) with a rectangular unit cell. Tunneling spectroscopic measurements were performed on the SAM as a function of junction resistance. STS results show that the I-Vs are non linear and asymmetric due to the inherent asymmetry in the molecular structure, with larger currents at negative sample biases. The asymmetry increases with increasing junction resistance due to the asymmetry in the coupling to the leads. This is brought out clearly in the differential conductance, which also shows a gap at the Fermi level. We also studied the effect of order and dynamics in the monolayer on the charge transport and found that competing forces between the electric field, intermolecular interactions, tip-molecule physisorption and substrate-molecule chemisorption impact the transport measurements and its reliability and that the presence of molecular order is very important for reproducible transport measurements. Thus while developing new electronic platforms based on molecules, it is important to have a good control of the molecule-substrate interface, for the devices to perform reliably. While such a control would minimize fluctuations and dynamics in the ensemble, the real challenge is to develop device architectures that are tolerant to fluctuations, since they cannot be totally eliminated in these low dimensional soft systems. Results of temperature dependent STS measurements will also be discussed.

Dholakia, Geetha↗
NASA NTRS1992

Simulation of electron transport in quantum well devices

Double barrier resonant tunneling diodes (DBRTD) have received much attention as possible terahertz devices. Despite impressive experimental results, the specifics of the device physics (i.e., how the electrons propagate through the structure) are only qualitatively understood. Therefore, better transport models are warranted if this technology is to mature. In this paper, the Lattice Wigner function is used to explain the important transport issues associated with DBRTD device behavior.

Miller, D. R.↗
NASA NTRS2017

A First-Principles Model Based on Saturation of the Electron Cyclotron Drift Instability for Electron Transport in Hydrodynamics Simulations of Hall Thruster Plasmas

We present a computational model based on the hypothesis that the higher-than-expected electron mobility across magnetic field lines observed in Hall thrusters is due to the growth and eventual saturation of the electron cyclotron drift instability. The key improvement of this model with respect to previous work is that it decouples the saturation of the instability from the correlation that exists between mobility and magnitude of the wave perturbations in linear theory, thereby enabling first-principles simulations. The model has been incorporated in the 2-D (r-z) multi-fluids code Hall2De and simulations of the H6 thruster at 300 V, 20 A are numerically stable and achieve a steady-state solution at a computational cost that is not significantly higher than previous Hall2De simulations. The computed location of the acceleration region is found to be within 10% of the length of the acceleration channel compared to that inferred by experiments. The simulations also capture well the plasma gradients along the channel centerline of this thruster. To further establish the validity of this model, we plan to conduct simulations of other thrusters and/or operating conditions.

Lopez Ortega, Alejandro↗
DOE OSTI2020

ElectroMon Geometry Considerations: Simulations of Electron Transport to a Diamond-Based Detector

Particle-in-Cell simulations were performed to investigate the effects of electrode bias and pitch on the expected number of electrons arriving at a diamond-based detector at a set of relevant incident electron energies for electron cloud monitoring. Results of these simulations indicate that the pitch of the electrodes directly impacts the number of incident electrons based on complete opacity of the electrodes to the electrons; image charge does not play a role at any relevant electron energy. Positive bias on the incident electrodes directly increases the energy of the incident electrons, while negative bias reduces the energy and completely repels incoming electrons of energies lower than the applied bias. These results are intended to be used as input parameters for a solid-state simulation which will determine the collection efficiency of the electron-hole pairs produced within the diamond as a function of position and energy.

43 PARTICLE ACCELERATORS↗
DOE OSTI2022

Role of Eu-Doping in the Electron Transport Behavior in the Zintl Thermoelectric Ca 5-x-y Yb x Eu y Al 2 Sb 6 System

A series of Eu-doped Zintl compounds belonging to theCa 5-x-y Yb x Eu y Al 2 Sb 6 (x = 0, 1.12; 0 ≤ y ≤ 0.63(2)) system have been successfully synthesized by both the arc-melting and the molten Pb-flux methods. All of the five title compounds initially crystallized in the Ca 5 Ga 2 As 6 -type phase (space group Pbam, Z = 2, Pearson code oP26) and maintained their original structure even after the post-heat treatment, unlike the recently reported n-type Zintl analogues in the Ca 5-x-y Yb x RE y Al 2 Sb 6 (RE = Pr, Nd, Sm) systems, which underwent a phase transition from the Ca 5 Ga 2 As 6 -type to the Ca 5 Al 2 Bi 6 -type phase after annealing. This research aimed to understand the origin of the structural preference of the title Ca 5-x-y Yb x Eu y Al 2 Sb 6 system, whether it was affected by the valence electron count or the cationic size. Electrical transport property measurements showed an increase in electrical conductivities and a decrease of Seebeck coefficients for Ca 4.89(1) Eu 0.11 Al 2 Sb 6 , Ca 4.82(1) Eu 0.18 Al 2 Sb 6 , and Ca 4.62(1) Eu 0.38 Al 2 Sb 6 , compared to the parental compound Ca 5 Al 2 Sb 6 . Hole effect measurements proved that these changes should be attributed to the reduced carrier concentration and enhanced carrier mobility. The comprehensive density functional theory calculations including electron density map analysis for the hypothetical model Ca 4.5 Eu 0.5 Al 2 Sb 6 revealed that the polarity between Al and Sb forming the anionic frameworks decreased as the Eu-dopants were introduced, which eventually affected the carrier mobility in the anionic frameworks. Thermal conductivity measurements proved that the Eu-doping successfully lowered the lattice thermal conductivity because of the enhanced atomic disordering. In conclusion, the magnetization measurements for Ca 4.37(2) Eu 0.63 Al 2 Sb 6 showed a typical Curie–Weiss behavior with weak antiferromagnetic nearest-neighbor interactions with θ p = -5.07 K.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Final Technical Report for DoE award DE‐SC0023367 “Energetic Electron Transport in Magnetized Plasma with Magnetic Islands”

This project investigated how plasmas interact with energetic particles and solid materials under extreme conditions relevant to fusion energy, space plasmas, and planetary environments. Using experiments on the DIII-D National Fusion Facility, the research first examined how high-energy electrons move, become trapped, and are released in plasmas containing magnetic islands—structures commonly found in fusion reactors and Earth’s magnetosphere—providing new insight into particle transport and acceleration processes. The project also explored plasma-driven chemical reactions that can occur during meteoroid entry into planetary atmospheres, demonstrating that simple molecules such as ammonia can be produced and survive in high-temperature plasma conditions. Together, these results improve understanding of plasma behavior across laboratory, space, and planetary systems while informing fusion plasma control and plasma–material interaction studies. The project additionally contributed to workforce development by training graduate students, undergraduates, and early-career researchers and by disseminating results through peer-reviewed publications and international scientific conferences.

Orlov, Dmitri Mikhailovich [UC San Diego] (ORCID:0↗
NASA NTRS2003

Vertical Electron Transport through PbS-EuS Structures

Temperature dependence of current-voltage I-V characteristics and resistivity is studied in ferromagnetic PbS-EuS semiconductor tunnel structures grown on n-PbS (100) substrates. For the structures with a single (2-4 nm thick) ferromagnetic EuS electron barrier we observe strongly non-linear I-V characteristics with an effective tunneling barrier height of 0.3-0.7 eV. The experimentally observed non-monotonic temperature dependence of the (normal to the plane of the structure) electrical resistance of these structures is discussed in terms of the electron tunneling mechanism taking into account the temperature dependent shift of the band offsets at the EuS-PbS heterointerface as well as the exchange splitting of the electronic states at the bottom of the conduction band of EuS.

Wrotek, S.↗
DOE OSTI2024

Electron transport barrier and high confinement in configurations with internal islands close to the plasma edge of W7-X

The low magnetic shear in the Wendelstein 7-X (W7-X) stellarator makes it feasible to shape the separatrix by the large islands constituting an island-divertor, and this can be exploited to access various magnetic configurations, including samples of different internal island sizes and locations. To investigate the configuration effects on the plasma confinement, a configuration scan was performed by changing the coil currents to vary the rotational transform between values 5/4 and 5/6 at the plasma boundary with different power levels (2, 4, 6 MW) of electron cyclotron resonance heating (ECRH) at a maximum plasma density of 8 × 10 19 m -2 . neutral beam injection (NBI) heating was also applied during some configurations of the scan to create a density ramp and access high densities beyond the X2 ECRH cutoff. For the magnetic configurations, where the 5/5 and 5/6 island chains were moved closer to separatrix but remaining inside the last closed flux surface, the electron cyclotron emission shows that an electron temperature, T e , pedestal develops already during ECRH heated plasma buildup phase indicating a transport barrier, and the barrier sustains irrespective of changed plasma heating conditions such as NBI in the later part of discharge. The transport barrier is broken by subsequent fast crashes, observed with multiple plasma diagnostics with characteristics such as tokamak edge localized modes, and the corresponding crash amplitude and frequency vary with plasma pressure. The impact of the transport barrier on plasma confinement can be seen through the increased core T e profile, which could be responsible for the overall increase in the stored diamagnetic energy by approximately 10% for these configurations. After the plasma heating is terminated, a backwards transition to a degraded confinement state is also observed. These observations indicate a configuration triggered high confinement mode in low shear W7-X. This work focuses on the occurrence of this transport barrier for different magnetic configurations and its relation to internal magnetic islands.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Highly Anisotropic Drude-Weight-Reduction and Enhanced Linear-Dichroism in van der Waals Weyl Semimetal T d -MoTe 2 with Coherent Interlayer Electronic Transport

Weyl semimetal (WSM) states can be achieved by breaking spatial-inversion symmetry or time reversal symmetry. However, the anisotropy of the energy reduction contributing to the emergence of WSM states has seldom been investigated by experiments. A van der Waals metal MoTe 2 exhibits a type-II WSM phase below the monoclinic-to-orthorhombic-phase-transition temperature T c ~ 250 K. Here, in this work, a combined linearly polarized optical-spectroscopy and electrical-transport study of MoTe 2 is reported at different temperatures. The Drude components in the a-axis, b-axis, and c-axis optical conductivity spectra, together with the metallic out-of-plane and in-plane electrical resistivities, indicate the coherent inter-layer and in-plane charge transports. Moreover, the Drude weight in σ 1a (ω), rather than the Drude weights in σ 1b (ω) and σ 1c (ω), decreases dramatically below T c , which exhibits a highly anisotropic decrease in its Drude weight and thus suggests a strongly anisotropic reduction of the electronic kinetic energy in the WSM phase. Furthermore, below T c , due to the in-plane anisotropic spectral-weight transfer from Drude component to high-energy region, the in-plane inter-band-absorption anisotropy increases remarkably ≈770 meV, and has the largest value (≈0.68) of normalized linear dichroism among the reported type-II WSMs. The work sheds light on seeking new WSMs and developing novel photonic devices based on WSMs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Implications of Electron Transport Layer and Back Metal Contact Variations in Tin–Lead Perovskite Solar Cells Assessed by Spectroscopic Ellipsometry and External Quantum Efficiency

The structural and optical properties of hybrid organic–inorganic metal halide perovskite solar cells are measured by spectroscopic ellipsometry to reveal an optically distinct interfacial layer among the back contact metal, charge transport, and absorber layers. Understanding how this interfacial layer impacts performance is essential for developing higher performing solar cells. Here, this interfacial layer is modeled by Bruggeman effective medium approximations (EMAs) to contain perovskite, C 60 , BCP, and metal. External quantum efficiency (EQE) simulations that consider scattering, electronic losses, and the formation of nonparallel interfaces are created with input derived from ellipsometry structural-optical models and compared with experimental EQE to estimate optical losses. This nonplanar interface causes optical losses in short circuit current density (JSC) of up to 1.2 mA cm –2 . A study of glass/C 60 /SnO 2 /Ag or Cu and glass/C 60 /BCP/Ag film stacks shows that C 60 and BCP mix, but replacing BCP with SnO 2 can prevent mixing between the ETLs to prevent contact between C 60 and back contact metal and enable the formation of a planar interface between ETLs and back contact metals.

14 SOLAR ENERGY↗
DOE OSTI2021

Anisotropic Properties of Quasi‐1D In 4 Se 3 : Mechanical Exfoliation, Electronic Transport, and Polarization‐Dependent Photoresponse

Abstract Theoretical and experimental investigations of various exfoliated samples taken from layered In 4 Se 3 crystals are performed. In spite of the ionic character of interlayer interactions in In 4 Se 3 and hence much higher calculated cleavage energies compared to graphite, it is possible to produce few‐nanometer‐thick flakes of In 4 Se 3 by mechanical exfoliation of its bulk crystals. The In 4 Se 3 flakes exfoliated on Si/SiO 2 have anisotropic electronic properties and exhibit field‐effect electron mobilities of about 50 cm 2 V −1 s −1 at room temperature, which are comparable with other popular transition metal chalcogenide (TMC) electronic materials, such as MoS 2 and TiS 3 . In 4 Se 3 devices exhibit a visible range photoresponse on a timescale of less than 30 ms. The photoresponse depends on the polarization of the excitation light consistent with symmetry‐dependent band structure calculations for the most expected ac cleavage plane. These results demonstrate that mechanical exfoliation of layered ionic In 4 Se 3 crystals is possible, while the fast anisotropic photoresponse makes In 4 Se 3 a competitive electronic material, in the TMC family, for emerging optoelectronic device applications.

Vorobeva, Nataliia S.↗
DOE OSTI2020

Fermi Level Engineering of Passivation and Electron Transport Materials for p-Type CuBi 2 O 4 Employing a High-Throughput Methodology

Metal oxide semiconductors are promising for solar photochemistry if the issues of excessive charge carrier recombination and material degradation can be resolved, which are both influenced by surface quality and interface chemistry. Coating the semiconductor with an overlayer to passivate surface states is a common remedial strategy but is less desirable than application of a functional coating that can improve carrier extraction and reduce recombination while mitigating corrosion. Here, a data-driven materials science approach utilizing high-throughput methodologies, including inkjet printing and scanning droplet electrochemical cell measurements, is used to create and evaluate multi-element coating libraries to discover new classes of candidate passivation and electron-selective contact materials for p-type CuBi 2 O 4 . The optimized overlayer (Cu 1.5 TiO z ) improves the onset potential by 110 mV, the photocurrent by 2.8×, and the absorbed photon-to-current efficiency by 15.5% compared to non-coated photoelectrodes. It is shown that these enhancements are related to reduced surface recombination through passivation of surface defect states as well as improved carrier extraction efficiency through Fermi level engineering. This work presents a generalizable, high-throughput method to design and optimize passivation materials for a variety of semiconductors, providing a powerful platform for development of high-performance photoelectrodes for incorporation into solar-fuel generation systems.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Electronic transport, thermal transport, thermal expansion, and magnetization in the strongly correlated metal LaNi⁢O 3

Perovskite structured LaNiO 3 is a strongly correlated metal with intriguing thermal and magnetic properties. The volume dependence of calculated and measured physical properties can add additional critical information to develop a more in-depth understanding of this strongly correlated phenomenon. Taking advantage of recent single crystal LaNiO 3 growth using the floating-zone method, we have measured the thermal expansion, the magnetostriction, and the pressure dependence of the magnetic susceptibility, which then allows derivation of the Grüneisen parameters γ e = $\frac{dlnN(E_F)}{d lnV}$, γ χ = $\frac{dlnχ}{d lnV}$, as well as of electric and thermal transport properties. We simulate the volume dependence of structural and magnetic properties using Density Functional Theory calculations at the Generalized Gradient Approximation level. A large discrepancy between experimental values and calculated ones suggests that strong correlations are likely to be dynamic in nature. This study also provides a side-by-side comparison of measurements in single crystal and polycrystalline samples of LaNiO 3 to elucidate intrinsic materials properties. A broad hump at high temperatures in the temperature dependence of magnetization found in the single crystal sample of LaNiO 3 has been rationalized by a model that includes the influence of electron correlations on the Landau diamagnetism.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Hot-Hole versus Hot-Electron Transport at Cu/GaN Heterojunction Interfaces

Among all plasmonic metals, copper (Cu) has the greatest potential for realizing optoelectronic and photochemical hot-carrier devices, thanks to its CMOS compatibility and outstanding catalytic properties. Yet, relative to gold (Au) or silver (Ag), Cu has rarely been studied and the fundamental properties of its photoexcited hot carriers are not well understood. Here, we demonstrate that Cu nanoantennas on p-type gallium nitride (p-GaN) enable hot-hole-driven photodetection across the visible spectrum. Importantly, we combine experimental measurements of the internal quantum efficiency (IQE) with ab initio theoretical modeling to clarify the competing roles of hot-carrier energy and mean-free path on the performance of hot-hole devices above and below the interband threshold of the metal. We also examine Cu-based plasmonic photodetectors on corresponding n-type GaN substrates that operate via the collection of hot electrons. By comparing hot hole and hot electron photodetectors that employ the same metal/semiconductor interface (Cu/GaN), we further elucidate the relative advantages and limitations of these complementary plasmonic systems. In particular, we find that harnessing hot holes with p-type semiconductors is a promising strategy for plasmon-driven photodetection across the visible and ultraviolet regimes. Given the technological relevance of Cu and the fundamental insights provided by our combined experimental and theoretical approach, we anticipate that our studies will have a broad impact on the design of hot-carrier optoelectronic devices and plasmon-driven photocatalytic systems.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗