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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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The Objective is to Determine if induced off-nominal welding disturbances: (1) Beam arc out (weld on high vapor pressure aluminum plate); (2) Pulsed beam voltage; (3) Pulsed beam current; and (4) Pulsed beam focus current can be observed in the input power to the high-voltage cabinet powering the EB gun, ie Non-Instrusive Load Monitoring (NILM).
Research was undertaken to study spall and subsequent recompaction of oxygen-free high-thermal-conductivity copper using a single-stage large-bore light gas gun capable of planar impacts. Gun experiments were conducted that produced an initial spall in the target with a subsequent recompaction of the spall damage/layer by the use of layered impactors. Symmetric spall experiments at similar conditions were also conducted as a control to the recompaction experiments. Photonic Doppler velocimetry was used to obtain the velocity history of the target’s back surface; these velocity histories were analyzed, and the results were compared to numerical simulations. After recovery of selected samples, the microstructure was analyzed using optical imaging microscopy and electron backscatter diffraction. Recompaction waves were clearly observed in the time-resolved data obtained at the back surface of the targets. Two different series of experiments were performed to understand the effect of damage morphology on the stress required for spall recompaction. In the initial series, the peak pressure of the first shock was systematically increased to alter the amount of damage in the material. While in the second series, the peak pressure of the second shock was increased, keeping the magnitude of the first shock relatively constant to understand the effect of peak stress on the recompaction process. Findings clearly show that recompaction results in a perturbed band of the microstructure at the location of the expected spall plane in all cases except where the peak stress of the second shock is lower than the critical value.
The controlled fabrication of vertical, tapered, and high-aspect ratio GaN nanowires via a two-step top-down process consisting of an inductively coupled plasma reactive ion etch followed by a hot, 85% H 3 PO 4 crystallographic wet etch is explored. The vertical nanowires are oriented in the $[0001]$ direction and are bound by sidewalls comprising of $\{33\bar{6}2\}$ semipolar planes which are at a 12° angle from the [0001] axis. High temperature H3PO4 etching between 60 °C and 95 °C result in smooth semipolar faceting with no visible micro-faceting, whereas a 50 °C etch reveals a micro-faceted etch evolution. High-angle annular dark-field scanning transmission electron microscopy imaging confirms nanowire tip dimensions down to 8–12 nanometers. The activation energy associated with the etch process is 0.90 ± 0.09 eV, which is consistent with a reaction-rate limited dissolution process. The exposure of the $\{33\bar{6}2\}$ type planes is consistent with etching barrier index calculations. The field emission properties of the nanowires were investigated via a nanoprobe in a scanning electron microscope as well as by a vacuum field emission electron microscope. Finally, the measurements show a gap size dependent turn-on voltage, with a maximum current of 33 nA and turn-on field of 1.92 V nm -1 for a 50 nm gap, and uniform emission across the array.
Accelerators are finding increasing use in numerous fields such as medicine, industry accelerator-based nuclear energy programs and others. A recent survey reveals only 20 high-energy accelerators worldwide serve elementary-particle physics while thousands of accelerators are routinely used in hospitals and industry (packaging, food sterilization, etc.).
Broader adoption of 4D ultrafast electron microscopy (UEM) for the study of chemical, materials, and quantum systems is being driven by development of new instruments as well as continuous improvement and characterization of existing technologies. Perhaps owing to the still-high barrier to entry, the full range of capabilities of laser-driven 4D UEM instruments has yet to be established, particularly when operated at extremely low beam currents (~fA). Accordingly, with an eye on beam stability, we have conducted particle tracing simulations of unconventional off-axis photoemission geometries in a UEM equipped with a thermionic-emission gun. Specifically, we have explored the impact of experimentally adjustable parameters on the time-of-flight (TOF), the collection efficiency (CE), and the temporal width of ultrashort photoelectron packets. The adjustable parameters include the Wehnelt aperture diameter (DW), the cathode set-back position (Ztip), and the position of the femtosecond laser on the Wehnelt aperture surface relative to the optic axis (Rphoto). Notable findings include significant sensitivity of TOF to DW and Ztip, as well as non-intuitive responses of CE and temporal width to varying Rphoto. As a means to improve accessibility, practical implications and recommendations are emphasized wherever possible.
A next generation, high-intensity electron-positron collider “Higgs factory”, such as the Circular Electron-Positron Collider (CEPC), is among the highest priority for the global high energy collider physics community. The CEPC can provide unprecedented opportunities for making fundamental discoveries and providing decisive insights in the quest for a “New Standard Model (SM)” of nature’s fundamental interactions. The CEPC could: 1) Identify the origin of matter, especially the mechanism related to the first-order phase transition in the early Universe, which could produce a detectable gravitational wave signal. 2) Discover dark matter, particularly dark matter particles with a mass between one tenth and 100 times the proton mass. 3) Observe an array of new physics smoking guns, with sensitivities orders of magnitude better than those of existing facilities. The SM of Particle Physics is a triumph of the past half a century, as it predicts and interprets almost all the phenomena observed in experiments from the highest energies with colliders to low energy “tabletop” studies. On the other hand, deep mysteries exist concerning the most fundamental interactions of matter and the space-time fabric of the Universe, including the nature of dark matter, the origin of “visible” matter, the vast hierarchy of elementary particle masses, the quantum nature of gravity, and the mechanism of inflation. These mysteries challenge us to look for “new physics” beyond the SM and General Relativity. Indeed, physicists believe that the SM is simply a low-energy effective theory that reflects aspects of the more profound theory that answers the aforementioned mysteries. Uncovering this “New SM”, the profound theory who supports the SM is the primary mission for particle physics in the post-Higgs boson era.
JSNS2 (J-PARC Sterile Neutrino Search at J-PARC Spallation Neutron Source) is an experiment searching for sterile neutrinos through the observation of ν¯μ→ν¯e appearance oscillations, using neutrinos produced by muon decay-at-rest. A key aspect of the experiment involves accurately understanding the neutrino flux and the quantities of pions and muons, which are progenitors of (anti)neutrinos, given that their production rates have yet to be measured. We present the first electron-neutrino flux measurement using C12(νe,e−)12Ng.s. reaction in JSNS2, yielding a flux of (6.7±1.6(stat)±1.7(syst))×10−9 cm−2 proton−1 at the JSNS2 detector location, located at 24 meters distance from the mercury target. This flux measurement is consistent with predictions from simulations based on hadron models.
The Jefferson Lab KL experiment will run at the Continuous Electron Beam Accelerator Facility with a much lower bunch repetition rate (7.80 or 15.59 MHz) than nominally used (249.5 or 499 MHz). While the proposed average current of 2.5 - 5.0 muA is relatively low compared to the maximum CEBAF current of approximately 180 muA, the corresponding bunch charge is atypically high for CEBAF injector operation. In this work, we investigated the evolution and transmission of low-rep-rate, high-bunch-charge (0.32 to 0.64 pC) beams through the CEBAF injector. Using the commercial software General Particle Tracer, we have simulated and analyzed the beam characteristics for both values of bunch charge. We performed these simulations with the existing injector using a 130 kV gun voltage. We have calculated and measured the transmission as a function of the photocathode laser spot size and pulse length. We report on the findings of these simulations and optimum parameters for operating the experiment.
Abstract Edge states occurring in Chern and quantum spin-Hall phases are signatures of the topological electronic band structure in two-dimensional (2D) materials. Recently, a new topological electromagnetic phase of graphene characterized by the optical N-invariant was proposed. Optical N-invariant arises from repulsive Hall viscosity in hydrodynamic many-body electron systems, distinct from the Chern and Z 2 invariants. In this paper, we introduce the topologically protected edge excitation—optical N-plasmon of interacting many-body electron systems in the topological optical N-phase. These optical N-plasmons are signatures of the topological plasmonic band structure in 2D materials. We demonstrate that optical N-plasmons exhibit unique dispersion relations, stability against various boundary conditions, and edge profiles when compared with the topologically trivial edge magneto plasmons. Based on the optical N-plasmon, we design an ultra sub-wavelength broadband topological hydrodynamic circulator, which is a chiral quantum radio-frequency circuit component crucial for information routing and interfacing quantum–classical computing systems. Furthermore, we reveal that optical N-plasmons can be effectively tuned by the neighboring dielectric environment without breaking the topological properties. Our work provides a smoking gun signature of topological electromagnetic phases occurring in 2D materials arising from repulsive Hall viscosity.
Impact ionization coefficients play a critical role in semiconductors. In addition to silicon, silicon carbide and gallium nitride are important semiconductors that are being seen more as mainstream semiconductor technologies. As a reflection of the maturity of these semiconductors, predictive modeling has become essential to device and circuit designers, and impact ionization coefficients play a key role here. Recently, several studies have measured impact ionization coefficients. We dedicated the first part of our study to comparing three experimental methods to estimate impact ionization coefficients in GaN, which are all based on photomultiplication but feature characteristic differences. The first method inserts an InGaN hole-injection layer, the accuracy of which is challenged by the dominance of ionization in InGaN, leading to possible overestimation of the coefficients. The second method utilizes the Franz–Keldysh effect for hole injection but not for electrons, where the mixed injection of induced carriers would require a margin of error. The third method uses complementary p–n and n–p structures that have been at the basis of this estimation in Si and SiC and leans on the assumption of a constant electric field, and any deviation would require a margin of error. In the second part of our study, we evaluated the models using recent experimental data from diodes demonstrating avalanche breakdown.
GaN/InGaN microLEDs are a very promising technology for next-generation displays. Switching control transistors and their integration are key components in achieving high-performance, efficient displays. Monolithic integration of microLEDs with GaN switching devices provides an opportunity to control microLED output power with capacitive (voltage)-controlled rather than current-controlled schemes. This approach can greatly reduce system complexity for the driver circuit arrays while maintaining device opto-electronic performance. In this work, we demonstrate a 3-terminal GaN micro-light emitting transistor that combines a GaN/InGaN blue tunneling-based microLED with a GaN n-channel FET. Further, the integrated device exhibits excellent gate control, drain current control, and optical emission control. This work provides a promising pathway for future monolithic integration of GaN FETs with microLED to enable fast switching, high-efficiency microLED display and communication systems.
High-energy nuclear physics experiments at the Jefferson Lab Continuous Electron Beam Accelerator Facility (CEBAF) require high spin-polarization electron beams produced from strained super-lattice GaAs photocathodes activated to negative electron affinity in a high voltage photogun operating at 130 kV dc. A pair of Wien filter spin rotators in the injector provides precise control of the electron beam polarization at the end station target. An upgrade of the CEBAF injector to better support the upcoming Moller experiment requires increasing the electron beam energy to 200 keV, resulting in better transmission through injector apertures and improved photocathode lifetime. In addition, the energy increase is expected to reduce unwanted helicity correlated intensity and position systematics. These requirements led to the design of a shielding electrode described in this work, which minimizes the electric field at the triple-point junction and linearizes the potential along the insulator, thus reducing the risk of field emission induced insulator arcing. The Wien spin rotator design was modified for increasing the electric field from 1.6 to 2.7 MV/m and the magnetic field from 9.1 to 13 mT. The upgrades required detailed modeling in Solidworks, electrostatic simulations using CST, beam dynamics using GPT, device implementation, and in situ high voltage characterization of the world?s first 200 keV polarized photoelectron gun and compatible Wien filter spin rotator.
Additive manufacturing (AM) is rapidly emerging in high performance applications such as army ground vehicles, automotive and transportation. However, the response of AM parts/components to extreme loading such as high velocity impacts is less studied. In this work, the performance under ballistic impact of AM panels is evaluated using a medium velocity gas gun, generating projectile velocities up to 400 m/s. The preferential print orientation properties are considered in order to evaluate whether the panels exhibit isotropic or anisotropic behavior under impact. Surface morphology is investigated by milling the beads smooth on samples and comparing the impact on as-printed samples to those that are smoothed. The effect of nickel chromium micron (nichrome) wire embedded in the AM panels (during print) of polycarbonate-carbon fiber (PC-CF) and polycarbonate-glass fiber (PC-GF) are explored. Thermoplastic polyurethane-acrylonitrile butadiene styrene/carbon fiber (TPU-ABS/CF), Acrylonitrile butadiene styrene-carbon-fiber (ABS-CF) AM samples absorbed >50% of the impact energy. The ballistic performance was noted to be in the following order – ABS-CF > TPU-ABS/CF > PC. Scanning electron microscopy (SEM) was conducted to study the interface between the nichrome wire and the polymer-fiber matrix. This work is the first of its kind exploring into the capabilities of AM panels as ballistic materials. This study leads the way for developing AM panels that are easily manufactured and exhibit superior ballistic resistance.
An electron beam with high bunch charge and high repetition rate is required for electron cooling of the ion beam to achieve the high luminosity required for the proposed electron-ion colliders. An improved design of the 300 kV DC high voltage photogun at Jefferson Lab was incorporated toward overcoming the beam loss and space charge current limitation experienced in the original design. To reach the bunch charge goal of ~ few nC within 75 ps bunches, the existing DC high voltage photogun electrodes and anode-cathode gap were modified to increase the longitudinal electric field (Ez) at the photocathode. The anode-cathode gap was reduced to increase the Ez at the photocathode, and the anode aperture was spatially shifted with respect to the beamline longitudinal axis to minimize the beam deflection introduced by the geometric asymmetry of the inverted insulator photogun. The electrostatic design and beam dynamics simulations were performed to determine the required modification. Beam-based measurement from the modified gun confirmed the reduction of the beam deflection, which is presented in this contribution.
Plasma-based accelerators (PBAs) driven by either intense lasers (laser wakefield accelerators, LWFAs) or particle beams (plasma wakefield accelerators, PWFAs), can accelerate charged particles at extremely high gradients compared to conventional radio-frequency (RF) accelerators. In the past two decades, great strides have been made in this field, making PBA a candidate for next-generation light sources and colliders. However, these challenging applications necessarily require beams with good stability, high quality, controllable polarization and excellent reproducibility. To date, such beams are generated only by conventional RF accelerators. As such, it is important to demonstrate the injection and acceleration of beams first produced using a conventional RF accelerator, by a PBA. In some recent studies on LWFA staging and external injection-acceleration in PWFA only a very small fraction (from below 0.1% to few percent) of the injected charge (the coupling efficiency) was accelerated. For future colliders where beam energy will need to be boosted using multiple stages, the coupling efficiency per stage must approach 100%. Here we report the first demonstration of external injection from a photocathode-RF-gun-based conventional linear accelerator (LINAC) into a LWFA and subsequent acceleration without any significant loss of charge or degradation of quality, which is achieved by properly shaping and matching the beam into the plasma structure. Furthermore, this is an important step towards realizing a high-throughput, multi-stage, high-energy, hybrid conventional-plasma accelerator.
We report on the novel use of a Cs+ ion gun for an ion-beam-assisted molecular-beam-epitaxy (IBA-MBE) method to sequentially deposit Cs-Sb cathodes on room temperature substrates as opposed to the standard technique of thermal evaporation on elevated-temperature substrates. The details of the ultrahigh-vacuum chamber, the Cs+ ion source, and the growth technique are elaborated. The final quantum efficiency (QE) is reasonably good for Cs-Sb cathodes grown on two different substrates—Si (100) and strontium titanate—and is comparable to the QE of cathodes grown using thermal sources. This suggests that IBA-MBE could be a viable alternative to grow alkali-antimonides without substrate heating, paving the way for the growth of epitaxial alkali-antimonides in a more reproducible fashion, which may help improve the efficiency of photon detectors and accelerator applications that use alkali-antimonides as electron sources.
General Fusion is developing a magnetized target fusion (MTF) approach that involves compressing an initial magnetically confined plasma inside a cavity formed in liquid metal. This approach builds from concepts initially developed under the Linus program at the U.S. Naval Research Laboratory and combines it with advances from compact toroid experiment (CTX) and sustained spheromak plasma experiment (SSPX) in compact toroid plasmas and coaxial Marshall gun systems. Modeling the tokamak during compression is central to designing a successful MTF device. The plasma is formed by coaxial helicity injection in the General Fusion device. Immediately after formation, the plasma has a diverted tokamak configuration with a single null. As the wall moves inwards, the plasma is repelled from the conducting surface and driven inwards by currents induced by its magnetic field in the liquid metal wall. As the liquid metal closes (or bridges) the opening of the coaxial plasma injector, the magnetic field topology alters to remove the null. Due to this, the plasma moves from a diverted to a wall-limited configuration. The liquid metal liner continues to close in and change shape, reducing in radius by a factor of ten at the peak of plasma compression. A model of the MTF plasma must be able to handle this continually varying geometry, and to be predictive, it must faithfully include the real imperfections arising in the process. In this project, we pursued a Monte Carlo approach to closures for MHD by computing kinetic electron trajectories in an MHD plasma background from simulations of GF devices. This requires enhancing the capabilities of the KORC-T code for running large ensembles of kinetic trajectories by porting it to GPU architectures and enabling workflows for large ensembles on OLCF machines. With these capabilities, it is possible to produce a large library of kinetic calculations of electron orbits evolving in plasma configurations spanning the magnetic configurations and plasma density profiles, including non-axisymmetry, arising in the General Fusion’s existing PI3 spherical tokamak device. Using ensembles will capture particles passing a single point in space in a given magnetic configuration, and the entire dataset will cover a range of global magnetic field geometries. By sampling around many starting points, this dataset will capture the spatial dependence of the plasma parameters. From this large dataset, it is possible to produce a reduced model for the kinetic effects not captured in MHD.
Radiation-hard high-voltage vertical GaN p-n diodes are being developed for use in power electronics subjected to ionizing radiation. Here, we present a comparison of the measured and simulated photocurrent response of diodes exposed to ionizing irradiation with 70 keV and 20 MeV electrons at dose rates in the range of 1.4x10 7 - 5.0x10 8 rad(GaN)/s. The simulations correctly predict the trend in measured steady-state photocurrent and agree with experimental results within a factor of 2. Furthermore, simulations of the transient photocurrent response to dose rates with uniform and non-uniform ionization depth profiles uncover the physical processes involved that cannot be otherwise experimentally observed due to orders of magnitude larger RC time constant of the test circuit. The simulations were performed using an Exploratory Physics Development code developed at Sandia National Laboratories. The code offers the capability to include defect physics under more general conditions, not included in commercially available software packages, extending the applicability of the simulations to different types of radiation environments.