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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Electrostatic energy harvester

An electrostatic energy harvester broadly comprises an electrical energy storage component, an electrical energy transfer stage, first and second variable capacitors, and a switching control module. The electrical energy transfer stage includes diode-connected transistors and dictates electrical energy transfer between the electrical energy storage component and the variable capacitors. The switching control module timely switches between the first and second variable capacitors according to a state machine. Subsequent electrical energy investments from the electrical energy storage component are less than an initial electrical energy investment due to remnant electrical energy remaining at the previously active one of the first and second variable capacitors from previous electrical energy harvesting.

Wilson, Amy Charlene↗
DOE OSTI2024

Solid state protective smart plug device

A wireless-controlled smart plug device and methods of use and operation, using a solid state switch to provide electrical power from an outlet to a load, and provide protection against overload, short circuit, ground, arc, or voltage surge faults. The switch includes a bidirectional semiconductor switch with two back-to-back connected transistors, such as silicon power MOSFETs, silicon insulated-gate bipolar transistors (IGBTs), silicon carbide (SiC) transistors, or gallium nitride (GaN) transistors, each configured to control the current flow from the electrical receptacle to the external electrical load.

Shen, Zheng↗
DOE OSTI2021

Electric field control of magnon spin currents in an antiferromagnetic insulator

Pure spin currents can be generated via thermal excitations of magnons. These magnon spin currents serve as carriers of information in insulating materials, and controlling them using electrical means may enable energy efficient information processing. Here, we demonstrate electric field control of magnon spin currents in the antiferromagnetic insulator Cr 2 O 3 . We show that the thermally driven magnon spin currents reveal a spin-flop transition in thin-film Cr 2 O 3 . Crucially, this spin-flop can be turned on or off by applying an electric field across the thickness of the film. Using this tunability, we demonstrate electric field–induced switching of the polarization of magnon spin currents by varying only a gate voltage while at a fixed magnetic field. We propose a model considering an electric field–dependent spin-flop transition, arising from a change in sublattice magnetizations via a magnetoelectric coupling. These results provide a different approach toward controlling magnon spin current in antiferromagnets.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Domain-wall-mediated polarization switching in ferroelectric AlScN: Strain relief and field-dependent dynamics

While scandium-doped aluminum nitride (AlScN) exhibits robust ferroelectricity and excellent thermal stability, its utility is limited by an exceptionally high coercive field (𝐸 𝑐 ) for polarization switching. Unraveling the atomistic switching dynamics is therefore critical for tailoring 𝐸 𝑐 . Here, in this study, we combine density functional theory and machine-learning molecular dynamics to elucidate the polarization switching mechanisms in AlScN over various Sc concentrations and applied electric fields. We find that excessive lattice strain strictly prohibits collective polarization switching, but the preexisting domain walls relieve strain and lead to a distinct switching dynamics—dictating a field-dependent switching mechanism. At low electric fields, switching occurs via gradual domain-wall propagation consistent with the Kolmogorov-Avrami-Ishibashi model. In contrast, high fields stimulate additional nucleation, driving a rapid, homogeneous reversal process described by the simultaneous nonlinear nucleation and growth model. These findings highlight the critical role of domain-wall dynamics and suggest domain engineering as a viable strategy to tailor coercive fields in AlScN and related ferroelectrics.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Probing ferroelectric domain structures and their switching dynamics in SrBi2Ta2O9 by in-situ electric biasing in transmission electron microscopy

Abstract Lead-free SrBi 2 Ta 2 O 9 (SBT) has been a promising ferroelectric material for various applications such as electronics and data storage due to its outstanding ferroelectric properties including high fatigue endurance and low leakage current. However, the atomic-scale domain structure and switching dynamics of ferroelectric SBT remain elusive. This study reveals that spontaneous polarization arises from canted bismuth-cation displacements, forming 90° and Ising-type 180° domain walls. Interestingly, topological pairs of ferroelectric vortex and antivortex connect ferroelectric boundaries where three domain walls converge. In situ electrical biasing transmission electron microscopy (TEM) reveals the dominance of 180° switching over 90°, where oxygen octahedral connectivity is protected by ferroelastic energy in the 90° domain wall. Consequently, all 180° domain walls and (anti)vortices are removed, leaving only 90° domain walls in the electrically poled states. Chemical deterioration along domain walls highlights vulnerability of SBT to ferroelectric fatigue. This study provides insight into crucial aspects for practical applications of SBT.

36 MATERIALS SCIENCE↗
NASA NTRS1972

Waveguide switch protector

Device for detecting excessive operation of electric motors used to drive waveguide switches is described. Purpose of device is to prevent burnout of electric motor in event of waveguide stoppage at some point other than extreme limits of travel. Operation of equipment, components used to sense motor performance, and schematic diagram are included.

Kolbly, R. B.↗
NASA NTRS2008

Electronic Switch Arrays for Managing Microbattery Arrays

Integrated circuits have been invented for managing the charging and discharging of such advanced miniature energy-storage devices as planar arrays of microscopic energy-storage elements [typically, microscopic electrochemical cells (microbatteries) or microcapacitors]. The architecture of these circuits enables implementation of the following energy-management options: dynamic configuration of the elements of an array into a series or parallel combination of banks (subarrarys), each array comprising a series of parallel combination of elements; direct addressing of individual banks for charging/or discharging; and, disconnection of defective elements and corresponding reconfiguration of the rest of the array to utilize the remaining functional elements to obtain the desited voltage and current performance. An integrated circuit according to the invention consists partly of a planar array of field-effect transistors that function as switches for routing electric power among the energy-storage elements, the power source, and the load. To connect the energy-storage elements to the power source for charging, a specific subset of switches is closed; to connect the energy-storage elements to the load for discharging, a different specific set of switches is closed. Also included in the integrated circuit is circuitry for monitoring and controlling charging and discharging. The control and monitoring circuitry, the switching transistors, and interconnecting metal lines are laid out on the integrated-circuit chip in a pattern that registers with the array of energy-storage elements. There is a design option to either (1) fabricate the energy-storage elements in the corresponding locations on, and as an integral part of, this integrated circuit; or (2) following a flip-chip approach, fabricate the array of energy-storage elements on a separate integrated-circuit chip and then align and bond the two chips together.

Mojarradi, Mohammad↗
DOE OSTI2025

Light field–controlled PHz currents in intrinsic metals

Oriented electric currents in metals are routinely driven by applying an external electric potential. Although the response of electrons to the external electric fields occurs within attoseconds, conventional electronics do not use this speed potential. Ultrashort laser pulses with controlled shapes of electric fields that switch direction at petahertz frequencies open perspectives for driving currents in metals. Light field–driven currents were demonstrated in various media including dielectrics, semiconductors, and topological insulators. Now, our research question is whether we can drive and control orders of magnitude more charge carriers in metals enabling ultrafast switching with practically low-energy, picojoule-level pulses. Here, we demonstrate the interaction of light with nanometer-thick metallic layers, which leads to a generation of light field–controlled electric currents. We show that the implantation of metallic layers into a dielectric matrix leads to up to 40 times increase of the sensitivity in contrast to a bare dielectric, decreasing the intensity threshold for lightwave electronics.

Fehér, Beatrix [HUN-REN Wigner Research Centre for↗
DOE OSTI2023

Nonvolatile Magnetoelectric Switching of Magnetic Tunnel Junctions with Dipole Interaction

The magnetoelectric effect is technologically appealing because of its ability to manipulate magnetism using an electric field rather than magnetic field or current, thus providing a promising solution for the development of energy-efficient spintronics. Although 180° magnetization switching is vital to spintronic devices, the achievement of 180° magnetization switching via magnetoelectric coupling is still a fundamental challenge. Here, in this work, voltage-driven full resistance switching of a magnetic tunnel junction (MTJ) with dipole interaction on a ferroelectric substrate through switchable parallel/antiparallel magnetization alignment is demonstrated. Parallel magnetization alignment along the y direction is obtained under a bias magnetic field. By rotating the magnetic easy axis via strain-mediated magnetoelectric coupling, the parallel magnetizations in the MTJ reorient to the x axis with opposite paths because of dipole interaction, thus resulting in antiparallel alignment. Moreover, this voltage switching of MTJs is nonvolatile owing to variations in dipole interaction and can be well understood via phase field simulations. The results provide an avenue to realize electrical switching of MTJs and are significant for exploring energy-efficient spintronic devices.

36 MATERIALS SCIENCE↗
NASA NTRS1976

Plug-in light switches

New concept in electrical hardware for buildings is safer, less expensive to manufacture, and easier to install than conventional wall receptacles.

Stringer, E. J.↗
NASA NTRS1987

Temperature-Controlling Circuit

Simple circuit switches current to electrical heater on and off to maintain temperature of room at 25 plus or minus 0.5 degree C. Lightweight, compact, reliable, insensitive to electrical noise, and uses single 5-Vdc power supply. Handles ac loads of 10 A. Designed to operate outside temperature controlled environment over range of -55 to +85 degree C. Thermistor provides input signal for simple temperature controller. Output of controller applied to solid-state relay, which in turn switches current to resistance heater.

Temple, Gerald↗
DOE OSTI2022

Electrostatic powder spreading for metal powder bed fusion applications

Typical powder bed fusion processes spread each layer of powder by pushing it across the build area with a spreader bar or roller. While simple, these methods require good flowing powder and do not have the ability to place more than one powder type per layer. This naturally limits the ability to incorporate more than one material onto each powder layer in powder bed additive manufacturing processes. Here we demonstrate electrostatic powder spreading, a method to deposit a powder layer without mechanical contact with the previous layers. Electrostatic powder spreading (ESPS) uses an electric field formed between a powder container and a counter electrode to move powder particles from the container to the powder bed. We show that the rate at which powder is deposited can be controlled by adjusting the strength of the electric field. Correspondingly, the deposited layer thickness is controlled by the strength of the electric field and the recoating speed. To demonstrate the feasibility of ESPS for laser powder bed fusion powder spreading, nearly fully dense (> 99.8%) coupons were built in a commercial L-PBF machine using the ESPS setup. Finally, we achieve 2D patterning of a single layer by using an array of electrodes and switching the applied electric field on and off. ESPS represents a method to produce an arbitrary patterned multi-material powder bed without complicated powder removal steps and easy implementation into existing L-PBF machines. Furthermore, ESPS presents an opportunity to build parts with 3D gradients in material properties.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Performance evaluation of underground thermal storage integrated dual-source heat pump systems

The increasing demand for electricity stresses the existing electric grids. Buildings consume 73% of all U.S. electricity and are responsible for 30% of U.S. greenhouse gas emissions. Integrating thermal energy storage (TES) in building heating/cooling systems, which consume considerable electricity, can mitigate the challenges to electric grids. Here, this study reports on a novel thermal energy storage device integrated heat pump system to reshape the building electricity demand profile while maintaining thermal comfort. The annual performance of the proposed system has been evaluated through a dynamic system simulation with high fidelity in the Modelica platform. The dynamic model of the novel hybrid component named ‘dual purpose underground thermal battery’ was developed and validated. It was then incorporated into the system model. Given a time-of-use tariff, a rule-based control strategy was designed to shift the electric demand and switch the heat pump source for a typical single-family house in different climate zones of the United States. The system performance of the new TES-integrated dual-source heat pump was compared with that of a conventional air-source heat pump system. The results indicate that the proposed system can reduce the annual HVAC electricity cost by up to 52% while saving 45.2% on electricity consumption. In the Northern areas, the annual peak load of the HVAC system can be reduced by 64.9%. However, this reduction is less in the Southern areas as the system’s higher efficiency in winter dominates the overall energy-saving potential.

25 ENERGY STORAGE↗
DOE OSTI2026

Electric Field Control of Phonon Lifetimes and Thermal Conductivity in Relaxor-Based Ferroelectric

The demand for high energy efficiency drives intense interest in thermal-management technology. Phonons are a major contributor to heat transfer in solids and controlling them through external stimuli is a key challenge for thermal management due to their weak interactions with applied fields. We report significant changes in phonon transport with the application of an electric field over a broad temperature range in a relaxor-based ferroelectric using neutron-scattering and -transport measurements. Phonon lifetimes increase along the applied poling field and this results in a tripling of the thermal conductivity in that direction. We also observe a suppression of nanoscale antiferroelectric fluctuations along the poling direction and argue that this increases the phonon lifetimes. Our results highlight a promising yet underexplored route to realistic solid-state heat switching from electric-field-modified nanostructures altering the phonon lifetimes in disordered functional materials.

Phonons↗
NASA NTRS2009

Prognostic health monitoring in switch-mode power supplies with voltage regulation

The system includes a current injection device in electrical communication with the switch mode power supply. The current injection device is positioned to alter the initial, non-zero load current when activated. A prognostic control is in communication with the current injection device, controlling activation of the current injection device. A frequency detector is positioned to receive an output signal from the switch mode power supply and is able to count cycles in a sinusoidal wave within the output signal. An output device is in communication with the frequency detector. The output device outputs a result of the counted cycles, which are indicative of damage to an a remaining useful life of the switch mode power supply.

Hofmeister, James P↗
DOE OSTI2024

Nonlinear optical diode effect in a magnetic Weyl semimetal

Diode effects are of great interest for both fundamental physics and modern technologies. Electrical diode effects (nonreciprocal transport) have been observed in Weyl systems. Optical diode effects arising from the Weyl fermions have been theoretically considered but not probed experimentally. Here, we report the observation of a nonlinear optical diode effect (NODE) in the magnetic Weyl semimetal CeAlSi, where the magnetization introduces a pronounced directionality in the nonlinear optical second-harmonic generation (SHG). We demonstrate a six-fold change of the measured SHG intensity between opposite propagation directions over a bandwidth exceeding 250 meV. Supported by density-functional theory, we establish the linearly dispersive bands emerging from Weyl nodes as the origin of this broadband effect. We further demonstrate current-induced magnetization switching and thus electrical control of the NODE. Our results advance ongoing research to identify novel nonlinear optical/transport phenomena in magnetic topological materials and further opens new pathways for the unidirectional manipulation of light.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Progress toward picosecond on-chip magnetic memory

Here, we offer a perspective on the prospects of ultrafast spintronics and opto-magnetism as a pathway to high-performance, energy-efficient, and non-volatile embedded memory in digital integrated circuit applications. Conventional spintronic devices, such as spin-transfer-torque magnetic-resistive random-access memory (STT-MRAM) and spin–orbit torque MRAM, are promising due to their non-volatility, energy-efficiency, and high endurance. STT-MRAMs are now entering into the commercial market; however, they are limited in write speed to the nanosecond timescale. Improvement in the write speed of spintronic devices can significantly increase their usefulness as viable alternatives to the existing CMOS-based devices. In this article, we discuss recent studies that advance the field of ultrafast spintronics and opto-magnetism. An optimized ferromagnet–ferrimagnet exchange-coupled magnetic stack, which can serve as the free layer of a magnetic tunnel junction (MTJ), can be optically switched in as fast as ~3 ps. Integration of ultrafast magnetic switching of a similar stack into an MTJ device has enabled electrical readout of the switched state using a relatively larger tunneling magnetoresistance ratio. Purely electronic ultrafast spin–orbit torque induced switching of a ferromagnet has been demonstrated using ~6 ps long charge current pulses. We conclude our Perspective by discussing some of the challenges that remain to be addressed to accelerate ultrafast spintronics technologies toward practical implementation in high-performance digital information processing systems.

42 ENGINEERING↗