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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Double-Layer Kagome Metals Pt 3 Tl 2 and Pt 3 In 2

The connectivity and inherent frustration of the kagome lattice can produce interesting electronic structures and behaviors in compounds containing this structural motif. Here we report the properties of Pt 3 X 2 (X = In and Tl) that adopt a double-layer kagome net structure related to that of the topologically nontrivial high-temperature ferromagnet Fe 3 Sn 2 and the density wave hosting compound V 3 Sb 2 . We examined the structural and physical properties of single crystal Pt 3 Tl 2 and polycrystalline Pt 3 In 2 using X-ray and neutron diffraction, magnetic susceptibility, heat capacity, and electrical transport measurements, along with density functional theory calculations of the electronic structure. Our calculations show that Fermi levels lie in pseudogaps in the densities of states with several bands contributing to transport, and this is consistent with our Hall effect, magnetic susceptibility, and heat capacity measurements. Although electronic dispersions, characteristic of simple kagome nets with nearest-neighbor hopping, are not clearly seen, likely due to the extended nature of the Pt 5d states, we do observe moderately large and non-saturating magnetoresistance values and quantum oscillations in the magnetoresistance and magnetization associated with the kagome nets of Pt.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Four-Terminal Electrochemistry: A Back-Gate Controls the Electrochemical Potential of a 2D Working Electrode

We demonstrate that ultrathin semiconductor working electrodes integrated into metal–insulator–semiconductor (MIS) stacks are an enabling platform for understanding non-Faradaic semiconductor electrochemistry. Furthermore, 5 nm thick ZnO electrodes were deposited on 30 nm HfO 2 dielectric on a Pd “gate” electrode. Application of a bias V G between the Pd gate and the ZnO electrode causes electrons to accumulate in the ZnO layer as measured by recording the in-plane sheet conductance. By contacting the top surface of the ZnO layer with the electrolyte in a conventional three-electrode electrochemical cell, we show that the gate voltage V G modulates the electrochemical potential V ZnO of the ZnO film with respect to a reference electrode. Electrochemical potential changes ΔV ZnO up to –1 V vs Ag/Ag + are achieved for V G = +7 V. Furthermore, by measuring V ZnO vs V G , we extract the quantum capacitance CQ of the ZnO film as a function of the Fermi-level position, which provides a direct measure of the ZnO electronic density of states (DOS). Finally, we demonstrate that the gated ZnO working electrodes can disentangle the two principal components of electrochemical potential, namely, the Fermi-level shift Δδ and the double-layer charging energy eΔΦ EDL . This disentanglement hinges on a fundamental difference between back-gating and normal electrochemical control, namely, that electrochemical control requires double-layer charging, while back-gate control does not. Collectively, the results show that the backside gate electrode is an effective fourth terminal that enables measurements that are difficult to achieve in conventional three-terminal electrochemical setups.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Electric-field-tunable electronic nematic order in twisted double-bilayer graphene

Graphene-based moiré systems have attracted considerable interest in recent years as they display a remarkable variety of correlated phenomena. Besides insulating and superconducting phases in the vicinity of integer fillings of the moiré unit cell, there is growing evidence for electronic nematic order both in twisted bilayer graphene and twisted double-bilayer graphene (tDBG), as signaled by the spontaneous breaking of the threefold rotational symmetry of the moiré superlattices. Here, we combine symmetry-based analysis with a microscopic continuum model to investigate the structure of the nematic phase of tDBG and its experimental manifestations. First, we perform a detailed comparison between the theoretically calculated local density of states and recent scanning tunneling microscopy data (arXiv:2009.11645) to resolve the internal structure of the nematic order parameter in terms of the layer, sublattice, spin, and valley degrees of freedom. We find strong evidence that the dominant contribution to the nematic order parameter comes from states at the moiré scale rather than at the microscopic scale of the individual graphene layers, which demonstrates the key role played by the moiré degrees of freedom and confirms the correlated nature of the nematic phase in tDBG. Secondly, our analysis reveals an unprecedented tunability of the orientation of the nematic director in tDBG by an externally applied electric field, allowing the director to rotate away from high-symmetry crystalline directions. Here, we compute the expected fingerprints of this rotation in both STM and transport experiments, providing feasible ways to probe it. Rooted in the strong sensitivity of the flat bands of tDBG to the displacement field, this effect opens an interesting route to the electrostatic control of electronic nematicity in moiré systems.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Probing the role of CNTs in Pt nanoparticle/CNT/graphene nanohybrids H 2 sensors

Abstract In the carbon nanotubes film/graphene heterostructure decorated with catalytic Pt nanoparticles using atomic layer deposition (Pt-NPs/CNTs/Gr) H 2 sensors, the CNT film determines the effective sensing area and the signal transport to Gr channel. The former requires a large CNT aspect ratio for a higher sensing area while the latter demands high electric conductivity for efficient charge transport. Considering the CNT’s aspect ratio decreases, while its conductivity increases ( i.e. , bandgap decreases), with the CNT diameter, it is important to understand how quantitatively these effects impact the performance of the Pt-NPs/CNTs/Gr nanohybrids sensors. Motivated by this, this work presents a systematic study of the Pt-NPs/CNTs/Gr H 2 sensor performance with the CNT films made from different constituent CNTs of diameters ranging from 1 nm for single-wall CNTs, to 2 nm for double-wall CNTs, and to 10–30 nm for multi-wall CNTs (MWCNTs). By measuring the morphology and electric conductivity of SWCNT, DWCNT and MWCNT films, this work aims to reveal the quantitative correlation between the sensor performance and relevant CNT properties. Interestingly, the best performance is obtained on Pt-NPs/MWCNTs/Gr H 2 sensors, which can be attributed to the compromise of the effective sensing area and electric conductivity on MWCNT films and illustrates the importance of optimizing sensor design.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2024

Physical origin of enhanced electrical conduction in aluminum-graphene composites

In this study, the electronic and transport properties of aluminum-graphene composite materials were investigated using the ab initio plane wave density functional theory. The interfacial structure is reported for several configurations. In some cases, the face-centered aluminum (111) surface relaxes in a nearly ideal registry with graphene, resulting in a remarkably continuous interface structure. The Kubo–Greenwood formula and space-projected conductivity were employed to study electronic conduction in aluminum single- and double-layer graphene-aluminum composite models. The electronic density of states at the Fermi level is enhanced by the graphene for certain aluminum–graphene interfaces, thus improving electronic conductivity. In double-layer graphene composites, conductivity varies non-monotonically with temperature, showing an increase between 300 and 400 K at short aluminum-graphene distances, unlike the consistent decrease in single-layer composites.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Establishing charge-transfer excitons in 2D perovskite heterostructures

Charge-transfer excitons (CTEs) immensely enrich property-tuning capabilities of semiconducting materials. However, such concept has been remaining as unexplored topic within halide perovskite structures. Here, we report that CTEs can be effectively formed in heterostructured 2D perovskites prepared by mixing PEA 2 PbI 4 :PEA 2 SnI 4 , functioning as host and guest components. Remarkably, a broad emission can be demonstrated with quick formation of 3 ps but prolonged lifetime of ~0.5 μs. This broad PL presents the hypothesis of CTEs, verified by the exclusion of lattice distortion and doping effects through demonstrating double-layered PEA 2 PbI 4 /PEA 2 SnI 4 heterostructure when shearing-away PEA 2 SnI 4 film onto the surface of PEA 2 PbI 4 film by using hand-finger pressing method. The below-bandgap photocurrent indicates that CTEs are vital states formed at PEA 2 PbI 4 :PEA 2 SnI 4 interfaces in 2D perovskite heterostructures. Electroluminescence shows that CTEs can be directly formed with electrically injected carriers in perovskite LEDs. Clearly, the CTEs presents a new mechanism to advance the multifunctionalities in 2D perovskites.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Localizing individual exciton on a quantum Hall antidot

Excitons are bond states of electron-hole pairs formed through Coulomb interaction. While excitonic phases have been widely studied in semiconductors and quantum Hall double-layers, prior works largely focus on bulk systems with large number of excitons, limiting their applications in quantum devices. Here, employing the approach of quantum Hall antidot with two spatially separated edge channels, we demonstrate a type of quantum Hall quasiparticle exciton which represents a quantum-coherent bound state of an electron and a hole situated on their corresponding edges coupled through intralayer tunneling and Coulomb interaction. This approach allows localization and electrical tuning of individual quantum Hall excitons. Quantum-coherent dynamics of exciton are observed in the gate-dependence of antidot conductance peaks near the electron-hole resonance, which signifies a quantum superposition of vacuum- and electron-hole pairing states. Modeling the electron-hole pair as a coupled two-level system, semi-quantitative understanding of experimental observations is achieved. This work opens avenues for creating quantum systems of multiple quantum Hall quasiparticles.

36 MATERIALS SCIENCE↗
DOE OSTI2025

New layered quaternary Zintl pnictide oxides Ba 2 Zn 2 Pn 2 O ( Pn = Sb, Bi): Discovery, crystal structures, band engineering, and transport properties

Three new heteroanionic oxypnictides, Ba 2 Zn 2 Sb 2 O, Ba 2 Zn 2 Bi 2 O, and the solid solution Ba 2 Zn 2 Sb 2−x Bi x O (x ≈ 1.1–1.6), have been synthesized and structurally characterized. They are isostructural with their Mn-bearing analog, adopting the Ba 2 Mn 2 Sb 2 O-type structure (space group P6 3 /mmc, No. 194), and feature a double-layered 2D $^{2}_{∞}$ [Zn 2 Pn 2 O] 2- substructure (Pn = Sb, Bi, Sb/Bi) composed of corner-sharing, distorted tetrahedral ZnPn 3 O units. Electronic structure calculations reveal a systematic progression from semiconducting Ba 2 Zn 2 Sb 2 O to metallic Ba 2 Zn 2 Bi 2 O as Bi content increases. These trends are corroborated by transport property measurements, with Ba 2 Zn 2 Sb 0.9(1) Bi 1.1 O exhibiting relatively low electrical resistivity, high Hall mobilities of ∼160 cm 2 /V·s, and large Seebeck coefficients from 69 to 132 μV K −1 over the 300–600 K temperature range. Comparison with structurally related Zintl pnictides, such as SrIn 2 As 2 and PrZn 3 As 3 phases, situates Ba 2 Zn 2 Pn 2 O (Pn = Sb, Bi) within a broader family of heteroanionic oxypnictide Zintl compounds, highlighting their structural flexibility and amenability to band engineering. Finally, electronic structure and bonding considerations point to tunable semiconducting behavior and underscore the relevance of these materials for thermoelectric and topological applications.

Band engineering↗
DOE OSTI2024

Mechanism of Antiferroelectricity in Polycrystalline ZrO 2

The size and electric field dependent induction of polarization in antiferroelectric ZrO 2 is the key to several technological applications that are unimaginable a decade ago. However, the lack of a deeper understanding of the mechanism hinders progress. Molecular dynamics simulations of polycrystalline ZrO 2 , based on machine-learned interatomic forces with near ab initio quality, shed light on the fundamental mechanism of the size effect on the transition fields. Stress in the oxygen sublattice is the most important factor. The so constructed interatomic forces allow the calculation of the transition fields as a function of the ZrO 2 film thickness and predict the ferroelectricity at large thickness. The simulation results are validated with electrical and piezo response force microscopy measurements. The results allow a clear interpretation of the properties of the double-hysteresis loops as well as the construction of the free energy landscape of ZrO 2 grains.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Overview of the TCV tokamak program: Scientific progress and facility upgrades

The TCV tokamak is augmenting its unique historical capabilities (strong shaping, strong electron heating) with ion heating, additional electron heating compatible with high densities, and variable divertor geometry, in a multifaceted upgrade program designed to broaden its operational range without sacrificing its fundamental flexibility. The TCV program is rooted in a three-pronged approach aimed at ITER support, explorations towards DEMO, and fundamental research. A 1 MW, tangential neutral beam injector (NBI) was recently installed and promptly extended the TCV parameter range, with record ion temperatures and toroidal rotation velocities and measurable neutral-beam current drive. ITER-relevant scenario development has received particular attention, with strategies aimed at maximizing performance through optimized discharge trajectories to avoid MHD instabilities, such as peeling-ballooning and neoclassical tearing modes. Experiments on exhaust physics have focused particularly on detachment, a necessary step to a DEMO reactor, in a comprehensive set of conventional and advanced divertor concepts. The specific theoretical prediction of an enhanced radiation region between the two X-points in the low-field-side snowflake-minus configuration was experimentally confirmed. Fundamental investigations of the power decay length in the scrape-off layer (SOL) are progressing rapidly, again in widely varying configurations and in both D and He plasmas; in particular, the double decay length in L-mode limited plasmas was found to be replaced by a single length at high SOL resistivity. Experiments on disruption mitigation by massive gas injection and electron-cyclotron resonance heating (ECRH) have begun in earnest, in parallel with studies of runaway electron generation and control, in both stable and disruptive conditions; a quiescent runaway beam carrying the entire electrical current appears to develop in some cases. Developments in plasma control have benefited from progress in individual controller design and have evolved steadily towards controller integration, mostly within an environment supervised by a tokamak profile control simulator. TCV has demonstrated effective wall conditioning with ECRH in He in support of the preparations for JT-60SA operation.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2026

Proximity Ferroelectricity in Compositionally Graded Structures

Proximity ferroelectricity is a novel paradigm for inducing ferroelectricity in a non-ferroelectric polar material, such as AlN or ZnO that are typically unswitchable with an external field below their dielectric breakdown field. When placed in direct contact with a thin switchable ferroelectric layer (such as Al 1-x Sc x N or Zn 1-x Mg x O), they become a practically switchable ferroelectric. Using the thermodynamic Landau-Ginzburg-Devonshire theory, in this work, we perform the finite element modeling of the polarization switching in the compositionally graded AlN-Al 1-x Sc x N, ZnO-Zn 1-x Mg x O, and MgO-Zn 1-x Mg x O structures sandwiched in both a parallel-plate capacitor geometry as well as in a sharp probe-planar electrode geometry. We reveal that the compositionally graded structure allows the simultaneous switching of spontaneous polarization in the whole system by a coercive field significantly lower than the electric breakdown field of unswitchable polar materials. The physical mechanism is the depolarization electric field determined by the gradient of chemical composition “x”. The field lowers the steepness of the switching barrier in the otherwise unswitchable parts of the compositionally graded AlN-Al 1-x Sc x N and ZnO-Zn 1-x Mg x O structures. In the MgO-like regions of the compositionally graded MgO-Zn 1-x Mg x O structure, a shallow double-well free energy potential emerges. Proximity ferroelectric switching of the compositionally graded structures placed in the probe-electrode geometry occurs due to nanodomain formation under the tip. We predict that a gradient of chemical composition “x” significantly lowers effective coercive fields of the compositionally graded AlN-Al 1-x Sc x N and ZnO-Zn 1-x Mg x O structures compared to the coercive fields of the corresponding multilayers with a uniform chemical composition in each layer. A tip-induced switching further lowers the coercive field, enabling control of ferroelectric domains in otherwise unswitchable compositionally graded structures, which can provide nanoscale domain control for memory, actuation, sensing, and optical applications.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Development of hydrothermal corrosion model and BWR metal coating for CVD SiC in light water reactors

SiC/SiC fiber composites with CVD SiC overcoats are potential candidates for light water reactor advanced accident tolerant cladding materials. Understanding its corrosion kinetics in Light Water Reactor (LWR) conditions is essential to evaluate the concept's viability. Existing models only account for the temperature and oxygen concentration effect on the hydrothermal corrosion behavior applicable to LWR operating conditions. However, the development of a general corrosion rate for CVD SiC that accounts for the impact of irradiated microstructure, flow rate, electrical resistivity, pH, and surface roughness is critical for the practical realization of SiC/SiC-based cladding concepts. After a rigorous experimental campaign, this work updates the existing hydrothermal corrosion model to predict hydrothermal corrosion in LWRs. Numerical radiation and coolant chemistry analysis for LWRs conducted based on the updated corrosion kinetic models suggests that CVD SiC is likely a viable environmental barrier coating for Pressurized Water Reactors while questionable for Boiling Water Reactors (BWR) when the effect of irradiation damage on SiC corrosion is considered. An effective mitigation strategy for the double-layer metal coating is proposed for BWR applications. The double-layer metal coating comprising a FeCrAl overcoat with an intermediate Cr bond coating was observed to provide a stable protective barrier against SiC dissolution in BWR conditions. Finally, the proposed metal coating was also fully adherent following quench and burst tests.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Effects of divertor electrical drifts on particle distribution and detachment near the divertor target plate in DIII-D

Strong impacts of drifts on the divertor plasma in–out asymmetry and detachment are demonstrated in DIII-D with an open divertor configuration. For forward toroidal field, B T , i.e., with the ion B × ∇B drift toward the divertor, the particle flux to the inner divertor, as represented by the Langmuir probe measured ion saturation current (J sat ), exhibits a double peak structure, with electron temperature, lower at the inner target. Reversing the B T direction reverses both the radial and poloidal E × B flows, leading to a broad particle flux profile in the outboard scrape-off layer (SOL) with a similar double-peak structure to that observed at the inner target with forward B T . The correlation of a double peak structure with divertor temperature profiles confirms physical coupling between the drift flow and sheath boundary condition and their strong impact on divertor profiles. In addition, under reversed B T conditions, increasing the density flattens the target temperature profile. However, J sat remains high away from the strike point, rendering it difficult to achieve an “effective” detached plasma, i.e., with effective reduction in both peak heat flux and peak temperature (in the far SOL). In contrast, divertor detachment with a cold and flat temperature profile can be achieved at both target plates with the forward B T .

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2026

Indirect tunneling enabled spontaneous time-reversal symmetry breaking and Josephson diode effect in TiN/Al 2 ⁢O 3 /Hf 0.8 ⁢Zr 0.2 ⁢O 2 /Nb tunnel junctions

Josephson diode (JD) effect in Josephson tunnel junctions (JTJs) has attracted a great deal of attention due to its importance for developing superconducting-circuitry-based quantum technologies. Even though the preparation of high-quality JTJs by techniques employed in the semiconductor industry has been demonstrated, which was an important milestone because JTJs are the building blocks of superconducting electronics even before the quantum era, the JD effect has not been accomplished in them, nor has the highly desirable electrical control of the effect. We report here the fabrication of JTJs featuring a composite tunnel barrier of Al 2 ⁢O 3 and Hf 0.8 ⁢Zr 0.2 ⁢O 2 using complementary-metal-oxide-semiconductor compatible atomic layer deposition. These JTJs were found to show the JD effect in nominally zero magnetic fields with nonreciprocity controllable via an electric training current, yielding a surprisingly large diode efficiency. The quasiparticle tunneling, through which the Josephson coupling in a JTJ is established, was found to show theoretically expected gap features but no nonreciprocity. We attribute these observations to the simultaneous presence of positive and negative local Josephson couplings in the JTJs, with the negative Josephson coupling originating from indirect tunneling, which results in spontaneous time-reversal symmetry breaking. Finally, the double-minima washboard potential for the ensemble-averaged phase difference in the resistively and capacitively shunted junction model is shown to fully account for the experimentally observed JD effect.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

MPC-based double-layer real-time conditional cSelf-restoration for interconnected microgrids

In this report, we propose a novel model predictive control(MPC)-based real-time conditional self-restoration energy management system (CSR-EMS) for interconnected microgrids (IMGs) integrated with renewable energy sources (RESs) and energy storage systems (ESSs). Superior to the existing IMG self-restoration methods, the “conditionality” of the proposed CSR-EMS can economically realize self-restoration and grid-assisted restoration during energy deficiency or faults, in both islanded and grid-connected modes. Cost minimization is implemented as the objective function to judge in real-time which restoration mode is economically preferred. The proposed CSR-EMS comprises two layers–the lower layer operates locally to eliminate electricity fluctuations created by RESs and ensure economic effectiveness within an MG, whereas the upper layer oversees the real-time operational status of the IMG system and determines power exchange among microgrids (MGs) during abnormalities. In detail, when a microgrid inside the IMG system experiences an energy deficiency, the CSR-EMS, on an MPC basis, intelligently optimizes power production from each dispatchable distributed generator (DG), ESS, power imported from the main grid, and power exchange among the IMGs to maintain the demand–supply balance, while considering system recovery cost, state of charge (SoC) of ESSs and operation modes of the IMGs (i.e., grid-connected or islanded mode). Simulation results and comparisons with existing IMG self-healing EMSs demonstrate the economic efficacy of the proposed CSR-EMS strategy during normal and abnormal operations, which can be used as an energy control framework for modern power systems with multiple interconnected microgrids.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2021

Revealing the effect of interfacial electron transfer in heterostructured Co 9 S 8 @NiFe LDH for enhanced electrocatalytic oxygen evolution

Heterointerface engineering is a desirable way to rationally design efficient and low-cost electrocatalysts for the oxygen evolution reaction (OER). Herein, urchin-like Co 9 S 8 @NiFe layered double hydroxide (Co 9 S 8 @NiFe LDH) heterostructured hollow spheres are assembled from Co 9 S 8 hollow spheres as the core and porous NiFe LDH nanowires as the shell. The heterostructured hollow spheres show a small overpotential of 220 mV at a current density of 10 mA cm -2 , a low Tafel slope of 52.0 mV dec -1 , and robust stability, which is better than that of commercial IrO 2 and most reported non-precious electrocatalysts. Density functional theory (DFT) calculations show that the synergetic effect at the interface could improve the electrical conductivity of Co 9 S 8 @NiFe LDH, induce electron transfer from NiFe LDH to Co 9 S 8 , and lower the energy barriers of intermediates for the OER, leading to enhanced electrocatalytic activity. Meanwhile, the urchin-like hollow structure with nanopores and super-hydrophilicity can provide desired structural stability, facilitate ion penetration and release bubbles, improving the accessibility of active sites and thereby boosting OER catalytic performance. This work provides a viable route to develop high performance electrocatalysts for the OER.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Inferring the scrape-off layer heat flux width in a divertor with a low degree of axisymmetry

Plasma facing components (PFCs) in the next generation of tokamak devices will operate in challenging environments, with heat loads predicted to exceed 10 MWm -2 . The magnitude of these heat loads is set by the width of the channel, the ‘scrape-off layer’ (SOL), into which heat is exhausted, and can be characterised by an e-folding length scale for the decay of heat flux across the channel. It is expected this channel will narrow as tokamaks move towards reactor relevant conditions. Understanding the processes involved in setting the SOL heat flux width is imperative to be able to predict the heat loads PFCs must handle in future devices. Measurements of the SOL width are performed on the high-field spherical tokamak, ST40, using a newly commissioned infrared thermography system. With its high on-axis toroidal magnetic field (≥1.5 T) ST40 is uniquely positioned to investigate the influence of toroidal field on the heat flux width in spherical tokamaks, whilst also extending measurements of the SOL width in spherical tokamaks to increased poloidal field (≥0.3 T). Due to the divertor on ST40 having a low degree of axisymmetry, it is necessary for a set of radial measurements of the heat flux to be taken across the divertor, made possible using an automated toolchain that fully incorporates its 3D geometry. These radial profiles are combined with the magnetic geometry of the plasma to infer the width of the SOL, with both Eich and double exponential profiles of heat flux observed. A reduction in the heat flux is observed toroidally across part of the divertor, along with increased heat loads observed locally around the edges of the tiles. Future work in characterising the impact of tile misalignment and uncertainties in the reconstructed divertor magnetic geometry is required in order to further understand the observed heat flux patterns, as are additional investigations into the role potentially being played by an inhomogeneous sheath electric field.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

PCB-on-DBC GaN Power Module Design with High-Density Integration and Double-Sided Cooling

Lateral gallium nitride (GaN) high-electron-mobility transistors (HEMTs) present better electrical characteristics compared to silicon or silicon carbide devices such as high switching speed and low gate charge, but also present additional challenges on the module design. Here, this paper discusses a high-density GaN power module with double-sided cooling, low inductance, on-package decoupling capacitors, and integrated gate drivers. The GaN dies as well as the gate drive are sandwiched between the printed circuit board (PCB) and direct bonded copper (DBC) substrate to achieve compact loop and double-sided cooling effect. Design considerations and thermal performance are analyzed. A module assembly procedure is presented utilizing the layer-by-layer attachment process. Finally, a 2.7 cm x 1.8 cm half-bridge GaN power module is fabricated and tested, achieving a low power-loop inductance of 1.03 nH, and the overshoot voltage of the switching waveform is less than 5% under a 400-V/25-A double-pulse test. The thermal resistance is 0.32 K/W, verified by simulation and experimental results. The design and assembly process can be generalized and applied to high power applications to achieve high power density and high performance.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗