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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
NASA NTRS1991

Directly deposited current collecting grids for AMTEC electrodes

Current collection in electrodes for the alkali metal thermal to electric converter (AMTEC) has been improved by using molybdenum grids to decrease sheet and contact resistance in RhW and PtW electrodes. The grids are directly deposited on the solid electrolyte either by sputter- or photodeposition. Comparison of electrodes having such underlying grids with those without such grids has shown power produced in an AMTEC cell to be increased by as much as 35 percent.

Ryan, M. A.↗
NASA NTRS2016

Overview of the Microgravity Science Glovebox (MSG) Facility and the Research Performed in the MSG

The Microgravity Science Glovebox (MSG) is a rack facility aboard the International Space Station (ISS) designed for investigation handling. The MSG was built by the European Space Agency (ESA) which also provides sustaining engineering support for the facility. The MSG has been operating on the ISS since July 2002 and is currently located in the US Laboratory Module. The unique design of the facility allows it to accommodate science and technology investigations in a "workbench" type environment. The facility has an enclosed working volume that is held at a negative pressure with respect to the crew living area. This allows the facility to provide two levels of containment for small parts, particulates, fluids, and gases. This containment approach protects the crew from possible hazardous operations that take place inside the MSG work volume. Research investigations operating inside the MSG are provided a large 255 liter enclosed work space, 1000 watts of direct current power via a versatile supply interface (120, 28, plus or minus 12, and 5 volts direct current), 1000 watts of cooling capability, video and data recording and real time downlink, ground commanding capabilities, access to ISS Vacuum Exhaust and Vacuum Resource Systems, and gaseous nitrogen supply. These capabilities make the MSG one of the most utilized facilities on ISS. The MSG has been used for over 27,000 hours of scientific payload operations. MSG investigations involve research in cryogenic fluid management, fluid physics, spacecraft fire safety, materials science, combustion, plant growth, biological studies and life support technology. The MSG facility is operated by the Payloads Operations Integration Center at Marshall Space Flight Center. Payloads may also operate remotely from different telescience centers located in the United States and Europe. The Investigative Payload Integration Manager (IPIM) is the focal to assist organizations that have payloads operating in the MSG facility. NASA provides an MSG engineering unit for payload developers to verify that their hardware is operating properly before actual operation on the ISS. This poster will provide an overview of the MSG facility, a synopsis of the research that has already been accomplished in the MSG, and an overview of video and biological upgrades. The author would like to acknowledge Teledyne Brown Engineering and the entire MSG Team for their inputs into this poster.

Jordan, Lee↗
DOE OSTI2023

Perpendicular in-plane negative magnetoresistance in ZrTe 5

The unique band structure in topological materials frequently results in unusual magneto-transport phenomena, one of which is in-plane longitudinal negative magnetoresistance (NMR) with the magnetic field aligned parallel to the electrical current direction. This NMR is widely considered as a hallmark of chiral anomaly in topological materials. Here we report the observation of in-plane NMR in the topological material ZrTe 5 when the in-plane magnetic field is both parallel and perpendicular to the current direction, revealing an unusual case of quantum transport beyond the chiral anomaly. We find that a general theoretical model, which considers the combined effect of Berry curvature and orbital moment, can quantitatively explain this in-plane NMR. In conclusion, our results provide new insights into the understanding of in-plane NMR in topological materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS2008

Logic Gates Made of N-Channel JFETs and Epitaxial Resistors

Prototype logic gates made of n-channel junction field-effect transistors (JFETs) and epitaxial resistors have been demonstrated, with a view toward eventual implementation of digital logic devices and systems in silicon carbide (SiC) integrated circuits (ICs). This development is intended to exploit the inherent ability of SiC electronic devices to function at temperatures from 300 to somewhat above 500 C and withstand large doses of ionizing radiation. SiC-based digital logic devices and systems could enable operation of sensors and robots in nuclear reactors, in jet engines, near hydrothermal vents, and in other environments that are so hot or radioactive as to cause conventional silicon electronic devices to fail. At present, current needs for digital processing at high temperatures exceed SiC integrated circuit production capabilities, which do not allow for highly integrated circuits. Only single to small number component production of depletion mode n-channel JFETs and epitaxial resistors on a single substrate is possible. As a consequence, the fine matching of components is impossible, resulting in rather large direct-current parameter distributions within a group of transistors typically spanning multiples of 5 to 10. Add to this the lack of p-channel devices to complement the n-channel FETs, the lack of precise dropping diodes, and the lack of enhancement mode devices at these elevated temperatures and the use of conventional direct coupled and buffered direct coupled logic gate design techniques is impossible. The presented logic gate design is tolerant of device parameter distributions and is not hampered by the lack of complementary devices or dropping diodes. In addition to n-channel JFETs, these gates include level-shifting and load resistors (see figure). Instead of relying on precise matching of parameters among individual JFETS, these designs rely on choosing the values of these resistors and of supply potentials so as to make the circuits perform the desired functions throughout the ranges over which the parameters of the JFETs are distributed. The supply rails V(sub dd) and V(sub ss) and the resistors R are chosen as functions of the distribution of direct-current operating parameters of the group of transistors used.

Krasowski, Michael J.↗
DOE OSTI2023

Electrodeposition and analysis of thick bismuth films

Due to its unique physical and chemical properties, bismuth is an attractive candidate for a wide range of applications such as battery anodes, radiation shielding, and semiconductors, to name a few. This work presents the electrodeposition of mechanically stable and homogenous bismuth films at micron-scale thicknesses. A simple one-step electrodeposition process using either a pulse/reverse or direct current source yielded thick, homogenous, and mechanically stable bismuth films. Morphology, electrochemical behavior, adhesion, and mechanical stability of bismuth coatings plated with varying parameters were characterized via optical profilometry, cyclic voltammetry, electron microscopy, and tribology. Scratch testing on thick electroplated coatings (> 100 µm) revealed similar wear resistance properties between the pulse/reverse plated and direct current electroplated films. This study presents a versatile bismuth electroplating process with the possibility to replace lead in radiation shields with an inexpensive, non-toxic metal, or to make industrially relevant electrocatalytic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Blocking Ion Migration Stabilizes the High Thermoelectric Performance in Cu 2 Se Composites

The applications of mixed ionic–electronic conductors are limited due to phase instability under a high direct current and large temperature difference. Here, it is shown that Cu 2 Se is stabilized through regulating the behaviors of Cu + ions and electrons in a Schottky heterojunction between the Cu 2 Se host matrix and in-situ-formed BiCuSeO nanoparticles. The accumulation of Cu + ions via an ionic capacitive effect at the Schottky junction under the direct current modifies the space-charge distribution in the electric double layer, which blocks the long-range migration of Cu + and produces a drastic reduction of Cu + ion migration by nearly two orders of magnitude. Moreover, this heterojunction impedes electrons transferring from BiCuSeO to Cu 2 Se, obstructing the reduction reaction of Cu + into Cu metal at the interface and hence stabilizes the β-Cu 2 Se phase. Furthermore, incorporation of BiCuSeO in Cu 2 Se optimizes the carrier concentration and intensifies phonon scattering, contributing to the peak figure of merit ZT value of ≈2.7 at 973 K and high average ZT value of ≈1.5 between 400 and 973 K for the Cu 2 Se/ BiCuSeO composites. Here, this discovery provides a new avenue for stabilizing mixed ionic–electronic conduction thermoelectrics, and gives fresh insights into controlling ion migration in these ionic-transport-dominated materials.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Resolving Discrepancies in Spin-Torque Ferromagnetic Resonance Measurements: Lineshape versus Linewidth Analyses

When spin-orbit torques are measured using spin-torque ferromagnetic resonance, two alternative ways of analyzing the results to extract the torque efficiencies—lineshape analysis and analysis of the change in linewidth versus direct current—often give inconsistent results. We identify a source for these inconsistencies. We show that fits of spin-torque ferromagnetic resonance data to the standard analysis framework leave significant residuals that we identify as due to (i) current-induced excitations of a small volume of magnetic material with magnetic damping much larger than that of the bulk of the magnetic layer, which we speculate is associated with the heavy-metal–magnet interface and (ii) oscillations of the sample magnetization at the modulation frequency due to heating. Here, the dependence of the residual signals on direct current can interfere with an accurate extraction of spin-torque efficiencies by the linewidth method. We show that the discrepancies between the two types of analysis can be largely eliminated by extrapolation of the window of magnetic fields used in the linewidth fits to small values so as to minimize the influence of the residual signals.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

c -axis transport in UTe 2 : Evidence of three-dimensional conductivity component

Here we study the temperature dependence of electrical resistivity for currents directed along all crystallographic axes of the spin-triplet superconductor UTe 2 . We focus particularly on an accurate determination of the resistivity along the c axis (ρ c ) by using a generalized Montgomery technique that allows extraction of crystallographic resistivity components from a single sample. In contrast to expectations from the observed highly anisotropic band structure, our measurement of the absolute values of resistivities in all current directions reveals a surprisingly nearly isotropic transport behavior at temperatures above Kondo coherence, with ρ c ~ ρ b ~ 2 ρ a , that evolves to reveal qualitatively distinct behaviors on cooling. The temperature dependence of ρ c exhibits a peak at a temperature much lower than the onset of Kondo coherence observed in ρ a and ρ b , consistent with features in magnetotransport and magnetization that point to a magnetic origin. A comparison to the temperature-dependent evolution of the scattering rate observed in angle-resolved photoemission spectroscopy experiments provides important insights into the underlying electronic structure necessary for building a microscopic model of superconductivity in UTe 2 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS2004

Development of Electronic Load Controllers for Free-Piston Stirling Convertors Aided by Stirling Simulation Model

The free-piston Stirling convertor end-to-end modeling effort at the NASA Glenn Research Center has produced a software-based test bed in which free-piston Stirling convertors can be simulated and evaluated. The simulation model includes all the components of the convertor: the Stirling cycle engine, heat source, linear alternator, controller, and load. So far, it has been used in evaluating the performance of electronic controller designs. Three different controller design concepts were simulated using the model: 1) Controllers with parasitic direct current loading. 2) Controllers with parasitic alternating current loading. 3) Controllers that maintain a reference current. The free-piston Stirling convertor is an electromechanical device that operates at resonance. It is the function of the electronic load controller to ensure that the electrical load seen by the machine is always great enough to keep the amplitude of the piston and alternator oscillation at the rated value. This is done by regulating the load on the output bus. The controller monitors the instantaneous voltage, regulating it by switching loads called parasitic loads onto the bus whenever the bus voltage is too high and removing them whenever the voltage is too low. In the first type of controller, the monitor-ing and switching are done on the direct-current (dc) bus. In the second type, the alternating current bus is used. The model allows designers to test a controller concept before investing time in hardware. The simulation code used to develop the model also offers detailed models of digital and analog electronic components so that the resulting designs are realistic enough to translate directly into hardware circuits.

Regan, Timothy F.↗
NASA NTRS2007

Hypersonic Magneto-Fluid-Dynamic Compression in Cylindrical Inlet

Hypersonic magneto-fluid-dynamic interaction has been successfully performed as a virtual leading-edge strake and a virtual cowl of a cylindrical inlet. In a side-by-side experimental and computational study, the magnitude of the induced compression was found to be depended on configuration and electrode placement. To better understand the interacting phenomenon the present investigation is focused on a direct current discharge at the leading edge of a cylindrical inlet for which validating experimental data is available. The present computational result is obtained by solving the magneto-fluid-dynamics equations at the low magnetic Reynolds number limit and using a nonequilibrium weakly ionized gas model based on the drift-diffusion theory. The numerical simulation provides a detailed description of the intriguing physics. After validation with experimental measurements, the computed results further quantify the effectiveness of a magnet-fluid-dynamic compression for a hypersonic cylindrical inlet. At a minuscule power input to a direct current surface discharge of 8.14 watts per square centimeter of electrode area produces an additional compression of 6.7 percent for a constant cross-section cylindrical inlet.

Shang, Joseph S.↗
NASA NTRS1992

Evaluation of high temperature capacitor dielectrics

Experiments were carried out to evaluate four candidate materials for high temperature capacitor dielectric applications. The materials investigated were polybenzimidazole polymer and three aramid papers: Voltex 450, Nomex 410, and Nomex M 418, an aramid paper containing 50 percent mica. The samples were heat treated for six hours at 60 C and the direct current and 60 Hz alternating current breakdown voltages of both dry and impregnated samples were obtained in a temperature range of 20 to 250 C. The samples were also characterized in terms of their dielectric constant, dielectric loss, and conductivity over this temperature range with an electrical stress of 60 Hz, 50 V/mil present. Additional measurements are underway to determine the volume resistivity, thermal shrinkage, and weight loss of the materials. Preliminary data indicate that the heat treatment of the films slightly improves the dielectric properties with no influence on their breakdown behavior. Impregnation of the samples leads to significant increases in both alternating and direct current breakdown strength. The results are discussed and conclusions made concerning their suitability as high temperature capacitor dielectrics.

Hammoud, Ahmad N.↗
NASA NTRS2004

High-Temperature Probe Station Developed to Characterize Microwave Devices Through 500 C

A photograph and a block diagram of the high-temperature probe station are shown. The system consists of the ceramic heater mounted on a NASA shuttle tile insulator, a direct current power supply, a personal-computer-based data acquisition and temperature controller, microwave probes, a microscope, and a network analyzer. The ability to perform microwave tests at high temperatures is becoming necessary. There is now a need for sensors and communication circuits that can operate at 500 C and above for aircraft engine development and monitoring during flight. To address this need, researchers have fabricated devices using wide bandgap semiconductors such as SiC with targeted operating temperatures of 500 to 600 C. However, the microwave properties of these devices often change drastically with temperature, so any designs that are intended to be used in such an environment must be characterized at high temperatures. For some reliability, lifetime, and direct-current testing, the device under test can be packaged and characterized in an oven. However, for RF and microwave measurements, it is usually not possible to establish a calibrated reference plane at the device terminals within a package. In addition, the characteristics of the package would vary over a 500 C temperature range, and this would have to be accounted for when the data were analyzed. A high temperature probe station allows circuits and devices to be characterized through on wafer measurements across a broad temperature range with known reference plane. The conventional, commercially available thermal wafer-probe stations that are used to evaluate microwave devices across a controlled temperature range have a typical upper limit of 200 C. Standalone thermal heating chucks are available with an extended upper temperature range of 300 to 400 C. To effectively characterize devices at temperatures up to and surpassing 500 C, Glenn researchers developed a custom probe station. In the past, custom probe stations have been developed to test devices under other extreme environments, such as cryogenic temperatures as low as 37 K. Similarly, this custom probe station was specifically modified for high-temperature use. It allows devices to be measured quickly and flexibly, without the use of wire bonds and test fixtures. The probe station is shown making scattering parameter measurements from 1 to 50 GHz with a Hewlett-Packard 8510C Network Analyzer. There is a half-wafer of silicon directly on top of the heater to provide a uniform heated platform for our sample. A quarter wafer of silicon carbide forms the substrate for our test circuit of several transmission lines.

Downey, Alan N.↗
DOE OSTI2021

Cybersecurity of Wide Area Monitoring, Protection and Control Systems for HVDC Applications

The flexibility provided by High Voltage Direct Current (HVDC) systems can be further extended by Wide Area Monitoring, Protection, and Control (WAMAPC) systems. WAMPAC systems enable many HVDC applications and, on the other hand, inevitably introduce cybersecurity concerns that need to be addressed. In this work, a security domain layer and decision framework is reported to detect and mitigate the impact of false data injection (FDI) attacks targeting HVDC stations. Specifically, a rule-based cyber-attack detection method is introduced and implemented on Raspberry Pi and tested on the real-time HVDC simulation facility on the real-time digital simulator (RTDS) platform at ABB U.S. Corporate Research Center.

cybersecurity↗
NASA NTRS1984

A dc to dc converter

The object of the invention is to provide an improved converter for converting one direct current voltage to another. A plurality of phased square wave voltages are provided from a ring counter through amplifiers to a like plurality of output transformers. Each of these transformers has two windings, and S(1) winding and an S(2) winding. The S(1) windings are connected in series, then the S(2) windings are connected in series, and finally, the two sets of windings are connected in series. One of six SCRs is connected between each two series connected windings to a positive output terminal and one of diodes is connected between each set of two windings of a zero output terminal. By virtue of this configuration, a quite high average direct current voltage is obtained, which varies between full voltage and two-thirds full voltage rather than from full voltage to zero. Further, its variation, ripple frequency, is reduced to one-sixth of that present in a single phase system. Application to raising battery voltage for an ion propulsion system is mentioned.

Willis, A. E.↗
DOE OSTI2021

Inverted Geometry Ceramic Insulators in High Voltage DC Electron Guns for Accelerators

A direct current (dc) high voltage photo-emission electron gun operating at 130 kV is utilized at the Jefferson Lab (JLab) Continuous Electron Beam Accelerator Facility to generate spin-polarized electrons for nuclear physics experiments. Over the past decade, JLab has tested and implemented inverted-geometry ceramic insulators in photoguns, connecting the cathode electrode in vacuum to the high voltage power supply using commercial high voltage cables. This contribution reports on tests performed up to 375 kV dc, implementation of inverted insulators in a 300 kV dc photogun generating magnetized electron beams, and describes plans to develop a reliable insulator-cable connector for applying 500 kV dc to a future polarized beam photogun operating reliably and without field emission at 350 kV.

Hernandez-Garcia, C.↗
DOE OSTI2022

3rd harmonic magnetometry assessment of NbTiN-based SIS structures

In the quest for alternative superconducting materials to bring accelerator cavity performance beyond the bulk niobium (Nb) intrinsic limits, a promising concept proposes that superconductor-insulator-superconductor (SIS) thin film structures can delay magnetic flux penetration in accelerator cavities to higher fields [1]. NbTiN is a candidate superconductor for such structures. We have demonstrated high quality NbTiN and AlN deposited by reactive direct current magnetron sputtering (DCMS), both for individual layers and multilayers. Interface quality has been assessed for bi-layer stacks with various NbTiN and AlN thicknesses from 500 and 30 nm down to 3 and 1 nm. These SIS structures show continued sharp interfaces. The Hfp enhancement of the films was examined with 3rd harmonic magnetometry. The system was designed and built in an ongoing collaboration with CEA Saclay. It can measure 1? to 2? samples on a temperature controlled stage. This contribution presents the assessment of the first penetration field enhancement with 3rd harmonic magnetometry for standalone films and multilayer nanostructures.

Valente, Anne-Marie↗
DOE OSTI2022

Projecting Recent Advancements in Battery Technology to Next–Generation Electric Vehicles

Electric vehicles (EVs) have seen rapid growth in adoption over the last several years. Advancements to increase battery life and performance, policy shifts, and high charging rate are expected to further accelerate the development of next generation of EVs. Battery improvements continue to emerge, enabling increased driving range, total distance driven over the life of vehicles, and ability to charge at high rates. Herein, an analysis framework to provide insights into inclusive design metrics, such as specific energy of batteries, energy consumption of vehicles, and charging power infrastructure development, is developed. Various cell-level fast charge protocols to realistic battery designs to understand the infrastructure needs associated with achieving range replacement of 32.25 km min -1 (20 mi min -1 ) are also scaled. Additionally, by calculating scaled power and peak to average power ratio, it is found that there needs to be more distinct alignment between the research efforts focused at the cell level and what is being developed for EV charging infrastructure needs. Finally, impact of high direct current voltage architecture in next-generation EVs is discussed. The findings in this work provide an insight into recent advancements in battery technology to next-generation EVs.

20 mi/min↗