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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

A Solid State Zwitterionic Plastic Crystal With High Static Dielectric Constant

Solid materials with a high dielectric constant have a wide range of applications in the energy storage field. In this research, an imidazolium-based zwitterion is designed, synthesized, and confirmed to have a plastic crystal phase based on the following experimental and computational evidence: (i) the presence of long-range order with weak intermolecular forces and competing attractive-repulsive interactions along different crystallographic directions; (ii) the observation of more than one endotherm on heating including a solid-solid phase transition at T s-s = −26 °C and melting of the plastic crystal at T m = 72°C; (iii) a low entropy of fusion at melting (2.1 JK −1 mol −1 ); (iv) a strongly anisotropic morphology; (v) relatively fast dynamics originating from short-range degrees of freedom. Furthermore, it exhibits a very high dielectric constant in the plastic crystal solid state (147 at −10°C and 103 at 70°C) due to the rotational degrees of freedom of plastic crystals that arise from weak net intermolecular interactions of zwitterions due to only having two carbons between the anion and cation. This material conveniently remains in the plastic crystal phase within 50 K of ambient temperature. This discovery opens new opportunities in the search for solid-state high dielectric constant materials.

dielectric relaxation↗
DOE OSTI2023

Highly Flexible Dielectric Films from Solution Processable Covalent Organic Frameworks**

Covalent organic frameworks (COFs) are known to be a promising class of materials for a wide range of applications, yet their poor solution processability limits their utility in many areas. Here we report a pore engineering method using hydrophilic side chains to improve the processability of hydrazone and β-ketoenamine-linked COFs and the production of flexible, crystalline films. Further, mechanical measurements of the free-standing COF films of COF-PEO-3 (hydrazone-linked) and TFP-PEO-3 (β-ketoenamine-linked), revealed a Young's modulus of 391.7 MPa and 1034.7 MPa, respectively. The solubility and excellent mechanical properties enabled the use of these COFs in dielectric devices. Specifically, the TFP-PEO-3 film-based dielectric capacitors display simultaneously high dielectric constant and breakdown strength, resulting in a discharged energy density of 11.22 J cm -3 . This work offers a general approach for producing solution processable COFs and mechanically flexible COF-based films, which hold great potential for use in energy storage and flexible electronics applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Solvation Effects on the Dielectric Constant of 1 M LiPF6 in Ethylene Carbonate: Ethyl Methyl Carbonate 3:7

We report the dielectric constant of 1 M LiPF 6 in EC:EMC 3:7 w/w (ethylene carbonate/ethyl methyl carbonate) in addition to neat EC:EMC 3:7 w/w. Using three Debye relaxations, the static permittivity value, or dielectric constant, is extrapolated to 18.5, which is compared to 18.7 for the neat solvent mixture. The EC solvent is found to strongly coordinate with the Li + cations of the salt, which results in a loss of dielectric contribution to the electrolyte. However, the small amplitude and large uncertainty in relaxation frequency for EMC cloud definitive identification of the Li + solvation shell. Importantly, the loss of the free EC permittivity contribution due to Li + solvation is almost completely balanced by the positive contribution of the associated LiPF 6 salt, demonstrating that a significant quantity of dipolar ion pairs exists in 1 M LiPF 6 in EC:EMC 3:7.

25 ENERGY STORAGE↗
DOE OSTI2025

Pressure-induced cation and vacancy disorder-order transition and near-zero τ f in deficient hexagonal perovskite Ba 8 ZnTa 6 O 24 dielectrics

Pressure applications can enable the tuning of atomic/defect ordering and provide access to new functional materials. Here, in this study, we report that pressure-induced structural transformation featuring disorder-order transition of both cations and vacancies in the 8-layer deficient hexagonal perovskite tantalate dielectrics Ba 8 ZnTa 6 O 24 , which transformed the structure from twin to shift and remarkably lowered the temperature coefficient of resonant frequency τ f down to near zero (∼0.56 ppm/°C) from 38 ppm/°C for the twinned precursor. The atomic scale STEM-HAADF and EDS results confirm the ordering of Zn in the Ta host at the nanometer scale in the shifted material featuring well-ordered Ba 8 ZnTa 6 O 24 slabs intergrown with Ba 3 ZnTa 2 O 9 and Ba 5 Ta 4 O 15 monolayers and anti-phase grain boundaries as planar defects. The pressure-induced twin-shift structural transformation of Ba 8 ZnTa 6 O 24 features the rare constant concentration of the hexagonal stacked layers, which is allowed by the vacancy ordering at the central layers of face-shared octahedral (FSO) trimers avoiding the FSO B-B repulsion, and remarkably the faster cationic ordering kinetics compared with the 2:1 ordered complex perovskites. Although the inclusion of numerous planar defects and the oxidizable atomic defects led to significant p-type conduction and inhomogeneous electrical microstructures, resulting in an extraordinarily high extrinsic dielectric loss for the high-pressure shifted Ba 8 ZnTa 6 O 24 pellet, the intrinsically near-zero τ f could make the shifted Ba 8 ZnTa 6 O 24 perovskite an ideal microwave dielectric resonator candidate if the defects could be eliminated.

high pressure↗
DOE OSTI2025

Enhanced dielectric insulation of biaxially oriented high temperature polyester films for capacitive energy storage

Biaxially oriented polypropylene (BOPP) films are widely used in dielectric capacitors due to their ultralow loss, high breakdown strength, and long lifetime. However, their poor temperature tolerance limits applications in emerging high-temperature environments such as wide-band-gap power electronics in electric vehicles. Here, we report significantly enhanced dielectric insulation properties of biaxially oriented poly(ethylene 2,6-naphthalate) (BOPEN) films compared to biaxially oriented poly(ethylene terephthalate) (BOPET) films, despite their similar semicrystalline morphologies. BOPEN exhibits higher DC and AC breakdown strengths and markedly extended lifetimes at elevated temperatures. For instance, at 120 °C, the DC Weibull lifetime of BOPEN exceeded that of BOPET by over two orders of magnitude and even surpassed that of BOPP. Through comprehensive analyses—leakage current, electric displacement-electric field loops, and thermally stimulated depolarization current—we attribute this superior performance to suppressed homocharge injection and conduction losses, enabled by the rigid naphthalene-based backbone in BOPEN that reduces dipole mobility and chain polarity. These findings underscore the potential of BOPEN as a next-generation polymer dielectric for high-temperature capacitor applications.

25 ENERGY STORAGE↗
DOE OSTI2025

Pool boiling heat transfer evaluation of next-generation dielectric fluid: Opteon™ 2P50

The growing use of artificial intelligence has led to heavy thermal loads and high heat dissipation rates in data centers. Conventional air-cooled technologies are not able to fulfill these requirements. To overcome these challenges, two-phase immersion cooling (2PIC) has emerged as one of the leading technologies for high power-density chips. 2PIC increases the heat dissipation rate and efficiency of the system while reducing the footprint of the cooling equipment. A fluid with adequate dielectric properties, a suitable normal boiling temperature to maintain chip temperatures, and good material compatibility, is desired for 2PIC system. In this study, the pool boiling heat transfer of a new developmental dielectric fluid, Opteon™ 2P50, was experimentally investigated. The heat transfer coefficients at various heat fluxes (20–150 kW/m 2 ) and the critical heat flux were measured using a smooth aluminum surface. Compared with HFE-7100, Opteon™ 2P50 shows higher heat transfer coefficient (up to 59% higher) and a slightly lower value of critical heat flux (around 5.9% lower). The modified Cooper correlation with the optimized leading constant resulted in reliable prediction accuracy with a 5.3% mean absolute error percentage. Overall, these results indicate that the new dielectric fluid provides similar thermal performance to some legacy fluids.

2P50↗
DOE OSTI2022

Nonlinear dielectric relaxation of polar liquids

Molecular dynamics of two water models, SPC/E and TIP3P, at a number of temperatures are used to test the Kivelson-Madden equation connecting single-particle and collective dielectric relaxation times through the Kirkwood factor. The relation is confirmed by simulations and used to estimate the nonlinear effect of the electric field on the dielectric relaxation time. We show that the main effect of the field comes through slowing down of the single-particle rotational dynamics and the relative contribution of the field-induced alteration of the Kirkwood factor is insignificant for water. Theories of nonlinear dielectric relaxation need to mostly account for the effect of the field on rotations of a single dipole in a polar liquid.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

GaAs Thermophotovoltaic Patterned Dielectric Back Contact Devices with Improved Sub-Bandgap Reflectance

We demonstrate GaAs thermophotovoltaic (TPV) devices with a patterned dielectric back contact (PDBC) architecture, featuring a dielectric spacer between the semiconductor and back metal contact over most of the back surface for high reflectance, and metal point contacts over a smaller area for electrical conduction. In the TPV application, high sub-bandgap reflectance is needed to reflect unused sub-bandgap photons to the thermal emitter to minimize energy losses in this portion of the thermal spectrum. We explore different PDBC fabrication processes with SU-8 and SiO2 dielectric spacer layers to maximize sub-bandgap reflectance while minimizing series resistance to increase TPV conversion efficiency. We successfully demonstrate GaAs SU-8 PDBC TPV devices with 2200 degrees C blackbody-weighted sub-bandgap reflectance of 94.9% and 96.5% with and without a front metal grid, respectively. This is 0.7% and 2.3% (absolute) higher than the mean sub-bandgap reflectance of 94.2% for GaAs baseline TPV devices with 100% Au back contact with front metal grid. Lower sub-bandgap reflectance in TPV devices with front grids indicates the front grid induces light scattering leading to additional parasitic absorption in the TPV device. We also show that for higher contact coverage fractions, the PDBC reflectance cannot in general be treated by a linear interpolation using simple 1D transfer matrix method modeling and should be treated instead as a diffraction grating by solving Maxwell's equations in 3D.

energy storage↗
DOE OSTI2023

2-Aminoanthracene Crystallization in Its Compatible Polystyrene Block: RAFT Synthesis and Enhanced Charge Retention in Pentacene Transistor Gate Dielectrics

We synthesized polystyrene-block-polyanthrylaminomethylstyrene (PS-b-PAAS) via RAFT reaction and side chain modification where the PAAS block is 50%. By blending 2-aminoanthracene (2AA) with PS-b-PAAS, the co-aggregation behavior of the PAAS block and 2AA within the thin film was observed by optical microscopy (OM) and x-ray diffraction. At 5 and 10 wt% of 2AA within the thin film, OM results showed a clear morphological difference between PS matrix and PS-b-PAAS matrix. Differences in the 2AA excited state lifetime in these matrices were also established using transient absorption spectroscopy (TAS). Blends were used as gate dielectrics in pentacene transistors. We compared characteristic voltage (Vc, an indicator of threshold voltage) before and after charging of PS-b-PAAS blended with unsubstituted PS and both polymers individually blended with 2AA. For blended PS-b-PAAS and PS, as the concentration of PS-b-PAAS increases, the decreased Vc especially with negative charging of the pentacene indicated a larger concentration of charge carriers induced by the dielectric film. The charging experiments also revealed that the unique structure formed by the 2AA/PS-b-PAAS blend significantly affected the charge storage capability of the organic field-effect transistors (OFET). Furthermore, this work demonstrates the novel co-aggregation structure in the dielectrics, and furthermore its impact on charge storage capability in pentacene OFETs.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Manipulation of Exciton Dynamics in Single-Layer WSe 2 Using a Toroidal Dielectric Metasurface

Recent advances in emerging atomically thin transition metal dichalcogenide semiconductors with strong light–matter interactions and tunable optical properties provide novel approaches for realizing new material functionalities. Coupling two-dimensional semiconductors with all-dielectric resonant nanostructures represents an especially attractive opportunity for manipulating optical properties in both the near-field and far-field regimes. In this work, by integrating single-layer WSe 2 and titanium oxide (TiO 2 ) dielectric metasurfaces with toroidal resonances, we realized robust exciton emission enhancement over 1 order of magnitude at both room and low temperatures. Furthermore, we could control exciton dynamics and annihilation by using temperature to tailor the spectral overlap of excitonic and toroidal resonances, allowing us to selectively enhance the Purcell effect. Our results provide rich physical insight into the strong light–matter interactions in single-layer TMDs coupled with toroidal dielectric metasurfaces, with important implications for optoelectronics and photonics applications.

36 MATERIALS SCIENCE↗
DOE OSTI2021

A hybrid coupler for directing quantum light emission with high radiative Purcell enhancement to a dielectric metasurface lens

Quantum photonic technologies such as quantum sensing, metrology, and simulation could be transformatively enabled by the availability of integrated single photon sources with high radiative rates and photon collection efficiencies. We address these challenges for quantum emitters formed from color center defect sites such as those in hexagonal boron nitride, which are promising candidates as single photon sources due to their bright, stable, polarized, and room temperature emission. We report design of a nanophotonic coupler from color center quantum emitters to a dielectric metasurface lens. The coupler is comprised of a hybrid plasmonic–dielectric resonator that achieves a large radiative Purcell enhancement and partial control of far-field radiation. We report radiative Purcell factors up to 285 and photon collection efficiencies up to 89% for a lossless metasurface, applying a continuous hyperboloidal phase-front. Our hybrid plasmonic–dielectric coupler interfacing two nanophotonic elements is a compound optical element, analogous to those found in microscope objective lenses, which combine multiple optical functions into a single component for improved performance.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

On the initiation and evolution of dielectric breakdown in auto-magnetizing liner experiments

Auto-magnetizing (AutoMag) liners are cylindrical tubes composed of discrete metallic helices encapsulated in insulating material; when driven with a ~2 MA, ~100-ns prepulse on the 20 MA, 100-ns rise time Z accelerator, AutoMag targets produced >150 T internal axial magnetic fields. Once the current rise rate of the pulsed power driver reaches sufficient magnitude, the induced electric fields in the liner cause dielectric breakdown of the insulator material and, with sufficient current, the cylindrical target radially implodes. The dielectric breakdown process of the insulating material in AutoMag liners has been studied in experiments on the 500–900 kA, ~100-ns rise time Mykonos accelerator. Multi-frame gated imaging enabled the first time-resolved observations of photoemission from dynamically evolving plasma distributions during the breakdown process in AutoMag targets. Using magnetohydrodynamic simulations, we calculate the induced electric field distribution and provide a detailed comparison to the experimental data. We find that breakdown in AutoMag targets does not primarily depend on the induced electric field in the gaps between conductive helices as previously thought. Finally, to better control the dielectric breakdown time, a 12–32 mJ, 170 ps ultraviolet (λ = 266 nm) laser was implemented to irradiate the outer surface of AutoMag targets to promote breakdown in a controlled manner at a lower internal axial field. Here, the laser had an observable effect on the time of breakdown and subsequent plasma evolution, indicating that pulsed UV lasers can be used to control breakdown timing in AutoMag.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Controlled Dielectric Breakdown to Form Pinhole Passivating Contacts

This contribution explores an alternate route to forming pinhole-based poly-Si/dielectric/c-Si passivating contacts. The method utilizes controlled dielectric breakdown or electroforming to produce nanoscale pinholes in a thick (non-tunnelling) dielectric which, when annealed, allows dopant atoms to pass from doped poly-Si through the pinholes and into the c-Si wafer, forming conductive pathways. We show that the pinholes lose passivation after electroforming but can be repassivated with a forming gas anneal. N-type contacts show contact resistivities of ~20 mOhm-cm2, but p-type contacts are ~100 mOhm-cm2. Devices show a distinct kink in the J-V curve indicative of a barrier to transport. The method can be expanded to optimized dielectric passivation stacks (not just thin, single layers) and can be formed in parallel over the faces of the wafer in selected areas (pinholes only under the grid lines).

CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SU↗
DOE OSTI2024

Electric fields near undulating dielectric membranes

Dielectric interfaces are crucial to the behavior of charged membranes, from graphene to synthetic and biological lipid bilayers. Understanding electrolyte behavior near these interfaces remains a challenge, especially in the case of rough dielectric surfaces. A lack of analytical solutions consigns this problem to numerical treatments. Here, we report an analytic method for determining electrostatic potentials near curved dielectric membranes in a two-dimensional periodic “slab” geometry using a periodic summation of Green’s functions. This method is amenable to simulating arbitrary groups of charges near surfaces with two-dimensional deformations. We concentrate on one-dimensional undulations. We show that increasing membrane undulation increases the asymmetry of interfacial charge distributions due to preferential ionic repulsion from troughs. In the limit of thick membranes, we recover results mimicking those for electrolytes near a single interface. Our work demonstrates that rough surfaces generate charge patterns in electrolytes of charged molecules or mixed-valence ions.

Chemistry↗
DOE OSTI2024

Probing electronic and dielectric properties of ultrathin Ga 2 O 3 /Al 2 O 3 atomic layer stacks made with in vacuo atomic layer deposition

Ultrathin (1–4 nm) films of wide-bandgap semiconductors are important to many applications in microelectronics, and the film properties can be sensitively affected by defects especially at the substrate/film interface. Motivated by this, an in vacuo atomic layer deposition (ALD) was developed for the synthesis of ultrathin films of Ga 2 O 3 /Al 2 O 3 atomic layer stacks (ALSs) on Al electrodes. It is found that the Ga 2 O 3 /Al 2 O 3 ALS can form an interface with the Al electrode with negligible interfacial defects under the optimal ALD condition whether the starting atomic layer is Ga 2 O 3 or Al 2 O 3 . Such an interface is the key to achieving an optimal and tunable electronic structure and dielectric properties in Ga 2 O 3 /Al 2 O 3 ALS ultrathin films. In situ scanning tunneling spectroscopy confirms that the electronic structure of Ga 2 O 3 /Al 2 O 3 ALS can have tunable bandgaps (E g ) between ~2.0 eV for 100% Ga 2 O 3 and ~3.4 eV for 100% Al 2 O 3 . With variable ratios of Ga:Al, the measured E g exhibits significant non-linearity, agreeing with the density functional theory simulation, and tunable carrier concentration. Furthermore, the dielectric constant of ultrathin Ga 2 O 3 /Al 2 O 3 ALS capacitors is tunable through the variation in the ratio of the constituent Ga 2 O 3 and Al 2 O 3 atomic layer numbers from 9.83 for 100% Ga 2 O 3 to 8.28 for 100% Al 2 O 3 . The high ε leads to excellent effective oxide thickness ~1.7–2.1 nm for the ultrathin Ga 2 O 3 /Al 2 O 3 ALS, which is comparable to that of high-K dielectric materials.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Epitaxial SrTiO 3 films with dielectric constants exceeding 25,000

Significance Semiconductor interfaces are among the most important in use in modern technology. The properties they exhibit can either enable or disable the characteristics of the materials they connect for functional performance. While much is known about important junctions involving conventional semiconductors such as Si and GaAs, there are several unsolved mysteries surrounding interfaces between oxide semiconductors. Here we resolve a long-standing issue concerning the measurement of anomalously low dielectric constants in SrTiO 3 films with record high electron mobilities. We show that the junction between doped and undoped SrTiO 3 required to make dielectric constant measurements masks the dielectric properties of the undoped film. Through modeling, we extract the latter and show that it is much higher than previously measured.

36 MATERIALS SCIENCE↗
DOE OSTI2023

End block dynamics in unentangled polymers by dielectric spectroscopy

Dielectric spectroscopy measures the dynamics of polymer melts over a broad frequency range. Developing a theory for the spectral shape can extend the analysis of dielectric spectra beyond determining relaxation times from the peak maxima and adds physical meaning to shape parameters determined with empirical fit functions. Toward this goal, we use the experimental results on unentangled poly(isoprene), and unentangled poly(butylene oxide), polymer melts, to test whether the concept of end blocks could be one reason for the Rouse model deviating from experimental data. These end blocks have been suggested by simulations and neutron spin echo spectroscopy and are a consequence of the monomeric friction coefficient depending on the position of the bead in the chain. The concept of an end block is an approximation which partitions the chain in a middle and two end blocks to avoid overparameterization by a continuous position dependent change of the friction parameter. Analysis of dielectric spectra shows that the deviations of the calculated from the experimental normal mode cannot be related to the end block relaxation. However, the results do not contradict an end block hiding below the segmental relaxation peak. Finally, it seems that the results are compatible with an end block being the specific part of the sub-Rouse chain interpretation close to the chain ends.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Computational prediction of dielectric breakdown strength of a transformer paper in oil with uncertainty quantification

The determination of the dielectric breakdown strengths of microstructurally heterogeneous materials has been a primarily experimental endeavor. We report the development of a microstructure-level model for computationally predicting the breakdown strength and analyzing the interactions between electromagnetic pulses (EMP) and the constituents in a composite of cellulose-based paper and mineral oil found in electrical transformers. The model allows explicit simulation of the material breakdown process by tracking the transition of dielectric constituents from non-conductive to conductive states. The focus is on the electric fields induced in the materials and the overall conditions for dielectric breakdown (defined as the onset of avalanche) caused by the electric field induced in the composite. Responses to three distinct pulse shapes, i.e., Steep Front (SF), Lightning (L), and AC with spectra spanning 60–9 × 105 Hz are considered. It is found that the breakdown strength of the material is significantly affected by microstructure heterogeneities, the spatial variations of the constituent properties, and the pulse shapes. A probabilistic characterization of the breakdown strength is computationally obtained and compared with experimental measurements. Although one particular material is analyzed, the model and approach are applicable to other heterogeneous materials as well.

breakdowns↗