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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10

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DOE OSTI2023

Enhancing Entanglement: Non-Markovian and Floquet Reservoir Engineering in Many-Qubit Superconducting Quantum Circuits

This is an experimental and theoretical project to leverage dissipation engineering under non-Markovian settings in order to aid in the preparation and stabilization of large, non-trivial, entangled quantum states. This project is a collaborative effort between the Painter group at Caltech and the Clerk group at the University of Chicago. By utilization of superconducting qubits coupled to the metamaterial waveguide described in the proposal, we tackle this goal via two parallel thrusts: (i) non-Markovian dynamics of a superconducting qubit strongly coupled to a slow-light waveguide reservoir and generation of 2D cluster states and (ii) many-qubit waveguide circuit QED for studying quantum many-body physics. In addition to device development and testing, we are also developing theoretical methods for understanding physics in the deep non-Markovian regime and driven-dissipative protocols for preparing and stabilizing the quantum many-body states.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2022

Performance Evaluation of Distributed Energy Resource Management Algorithm in Large Distribution Networks

This paper presents performance evaluation of hierarchical optimization and control for distributed energy resource management system (DERMS) in large distribution networks via an advanced hardware-in-the-loop (HIL) platform. The HIL platform provides realistic testing in a laboratory envi-ronment, including the accurate modeling of a full-scale dis-tribution system of 11,000 nodes, the DERMS software con-troller, and 90 power hardware photovoltaics (PVs) and bat-tery inverters. The applied DERMS algorithm is designed based on a real-time optimal power flow algorithm and im-plemented with acceleration design that performs fast dis-patch of simulated PVs and real physical hardware DER devices every 4 seconds.

distributed energy management system (DERMS)↗

DOE OSTI2023

Apparatus and methods for managing packet transfer across a memory fabric physical layer interface

An apparatus and method for managing packet transfer between a memory fabric having a physical layer interface higher data rate than a data rate of a physical layer interface of another device, receives incoming packets from the memory fabric physical layer interface wherein at least some of the packets include different instruction types. The apparatus and method determine a packet type of the incoming packet received from the memory fabric physical layer interface and when the determined incoming packet type is of a type containing an atomic request, the method and apparatus prioritizes transfer of the incoming packet with the atomic request over other packet types of incoming packets, to memory access logic that accesses local memory within an apparatus.

Blagodurov, Sergey↗

DOE OSTI2023

Exploring the parameter space of MagLIF implosions using similarity scaling. II. Current scaling

Magnetized liner inertial fusion (MagLIF) is a magneto-inertial-fusion (MIF) concept, which is presently being studied on the Z pulsed power facility. The MagLIF platform has achieved interesting plasma conditions at stagnation and produced significant fusion yields in the laboratory. Given the relative success of MagLIF, there is a strong interest to scale the platform to higher peak currents. However, scaling MagLIF is not entirely straightforward due to the large dimensionality of the experimental input parameter space and the numerous physical processes involved in MIF implosions. Here, in this work, we propose a novel method to scale MagLIF loads to higher currents. Our method is based on similarity (or similitude) scaling and attempts to preserve much of the physics regimes already known or being studied on today's Z pulsed-power driver. By avoiding significant deviations into unexplored and/or less well-understood regimes, the risk of unexpected outcomes on future scaled-up experiments is reduced. Using arguments based on similarity scaling, we derive the scaling rules for the experimental input parameters characterizing a MagLIF load (as functions of the characteristic current driving the implosion). We then test the estimated scaling laws for various metrics measuring performance against results of 2D radiation–magneto-hydrodynamic hydra simulations. Agreement is found between the scaling theory and the simulation results.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2023

Understanding the Breakdown Behavior of Ultrawide-Bandgap Boron Nitride Power Diodes Using Device Modeling

Herein, a device study using technology computer-aided design simulation to theoretically analyze the electrical performance of ultrawide-bandgap boron nitride (BN)-based vertical junction devices is performed, including h-BN Schottky diode, h-BN pn diode, and h-BN/AlN pn diode; this is also the first demonstration of the BN power devices in simulation. The material properties of BN are defined with recently reported data, and the physical mechanisms of the device performance are systematically investigated. Additionally, the h-BN junctions in this simulation shows excellent performance, especially for breakdown behaviors. Schottky diode shows a turn-on voltage of 0.6 V for Pt Schottky contact and breakdown voltages over 450 V for 5 μm, 6 × 10 15 cm –3 p-type-doped drift layer; The h-BN pn diode shows a turn-on voltage of 6 V and breakdown voltages over 3 kV with a critical electric field of 13.6 MV cm –1 for 2.5 μm, 2 × 10 16 cm –3 p-type-doped drift layer. The h-BN/AlN heterojunction pn diode shows a turn-on voltage of 5.8 V and breakdown voltage over 2 kV for 2.5 μm, 2 × 10 16 cm –3 n-type-doped AlN drift layer. Herein, an understanding of the device principles of vertical BN junctions is provided, which can serve as a reference for the future development of robust BN power electronics.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Effect of molecular permanent dipole moment on guest aggregation and exciton quenching in phosphorescent organic light emitting diodes

This study explores the effect of molecular permanent dipole moment (PDM) on aggregation of guest molecules in phosphorescent host–guest organic light-emitting diodes (OLEDs). Through a combination of photoluminescence measurements, high-angle annular dark-field scanning transmission electron microscopy analysis, and an Ising model based physical vapor-deposition simulation, we show that higher PDM of tris[2-phenylpyridinato-C2,N]iridium(III) guest can actually lead to a reduced aggregation relative to tris[bis[2-(2-pyridinyl-N)phenyl-C] (acetylacetonato)iridium(III) when doped into a non-polar host 1,3,5-tris(carbazol-9-yl)benzene. This study further explores the effect of host polarity by using a polar host 3′,5′-di(carbazol-9-yl)-[1,1′-biphenyl]-3,5-dicarbonitrile, and it is shown that the polar host leads to reduced guest aggregation. In conclusion, this study provides a comprehensive understanding of the impact of molecular PDM on OLED material efficiency and stability, providing insights for optimizing phosphorescent OLED materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2022

Electrostatic harvester device

An electrostatic harvester device for charging an energy storage device is provided. The electrostatic harvester device comprises an inductor, a variable capacitor device, a semiconductor device, and a plurality of transistors. The inductor is operable to receive electric charge and store the electric charge. The variable capacitor device is configured to receive electric charge from the inductor and to change capacitance in response to physical stimulation. The semiconductor device is operable to allow electric current to flow from the variable capacitor device. The transistors are operable to connect at least two of the aforementioned devices. At least one of the transistors comprises at least one of gallium nitride or aluminum gallium nitride.

Wilson, Amy Charlene↗

DOE OSTI2026

Robust Interpretation of Electrochemical Impedance Spectra Using Numerical Complex Analysis

Electrochemical Impedance Spectroscopy (EIS) is a noninvasive technique widely used for understanding charge transfer and charge transport processes in electrochemical systems and devices. Standard approaches for the interpretation of EIS data involve starting with a hypothetical circuit model for the physical processes in the device based on experience/intuition and then fitting the EIS data to this circuit model. This work explores a mathematical approach for extracting key characteristic features from EIS data by relying on fundamental principles of complex analysis. These characteristic features can suggest the presence of inductors and constant phase elements (nonideal capacitors) from impedance data and enable us to answer questions about the identifiability and nonuniqueness of equivalent circuit models. In certain scenarios such as models with only resistors and capacitors, we are able to enumerate all possible families of circuit models. Finally, we apply the mathematical framework presented here to real-world electrochemical systems and highlight results using impedance measurements from a lithium-ion battery coin cell.

charge transfer↗

DOE OSTI2024

Simulation of plasma and neutral transport in PISCES-RF using SOLPS-ITER

In this research, the fluid plasma transport code SOLPS-ITER is applied and validated against experimental data from the plasma interaction surface component experimental station (PISCES)-RF linear plasma device to establish a physics basis for plasma and neutral transport in its two magnetic field (B-field) geometry setups-(1)the cusp and (2) non-cusp or linear B-field. The main focus of this study is to understand (1) radial plasma transport (2) heat and particle loads on the upstream dump and downstream target plate, and (3) the physics of plasma-neutral interactions in PISCES-RF. The simulation setup adheres to typical PISCES-RF experimental conditions, with a 2D helicon power deposition profile as an input heating source. SOLPS-ITER simulations reproduce experimental conditions with the Bohm diffusion model for both B-field configurations of the PISCES-RF experiment. Major energy loss channels include neutral radiation and power deposited on the wall and dump plate, with only 1% of the input power reaching the target. The ionization front is well confined near the dump plate due to the heating and puffing regions. Additionally, SOLPS-ITER simulation results are also found to be in very good agreement with the particle-in-cell calculations using the code-PICOS++ which supports the validity of SOLPS in low collisionality regime.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2026

The high-field tokamak physics basis for the ARC fusion power plant

This editorial summarizes the physics basis underlying the ARC high-field tokamak fusion power plant, including recent advances in tokamak plasma understanding, the role of the SPARC device, and key remaining physics questions. It describes how these results guide the ARC Version 3A design and outlines opportunities for the broader fusion community to contribute to the development of first-generation fusion power plants.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2021

Industrial control system device classification using network traffic features and neural network embeddings

Characterization of modern cyber–physical Industrial Control System (ICS) devices is critical to the evaluation of their security posture and an understanding of the underlying industrial processes with which they interact. In this work, we address two related ICS device identification tasks: (1) separating ICS from non-ICS devices and (2) identifying specific ICS device types. We propose two distinct methods (one based on the existing IP2Vec method, and a novel traffic-features-based method) for achieving the first task. For transferability of the first task between two datasets, the traffic-features-based method performs significantly better (75% overall accuracy) compared to IP2Vec (22.5% overall accuracy). We further propose a novel method called DNP2Vec to address the second task. DNP2Vec is evaluated on two different datasets and achieves perfect multi-class classification accuracy (100%) for both datasets.

42 ENGINEERING↗

DOE OSTI2025

Photoconductive Semiconductor Switches: Materials, Physics, and Applications

Photoconductive semiconductor switching (PCSS) devices have unique characteristics to address the growing need for electrically isolated, optically gated, picosecond-scale jitter devices capable of operating at high voltage, current, and frequency. The state of the art in material selection, doping, triggering, and system integration in PCSSs is presented. The material properties and doping considerations of GaN, GaAs, SiC, diamond, and β-Ga2O3 in the fabrication of PCSS devices are discussed. A review of the current understanding of the physics of the high-gain mode known as lock-on is presented.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Scaling arguments for a plasma experiment relevant to an interplanetary coronal mass ejection

We present the design of a plasma experiment scaled to be relevant to an interplanetary coronal mass ejection (ICME) traveling from the Sun to the Earth. The experiment would launch a compact torus of plasma (the scaled analog of the coronal mass ejected by the Sun) into a magnetized background plasma (the scaled analog of the interplanetary medium, the diffuse magnetized plasma that fills the Solar System). We present the complete process of scaling the ICME system to a laboratory experiment: beginning with the ICME features that we aim to replicate with a laboratory experiment, explaining how these desired features are translated into specific design constraints, and presenting a set of experimental parameters that meet those constraints. We find that the experiment would be possible with plasma conditions typically achieved in large-scale facilities such as the Big Red Ball at the University of Wisconsin or the LArge Plasma Device at the University of California, Los Angeles.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2025

Probing the Effects of the First Atomic Layer on the Dynamic Behavior of Sub-2 nm MgO/Al 2 O 3 Memristors

As electronic devices continue to scale down from the current sub-5 nm range, atomic-scale control of defects becomes increasingly crucial to suppressing their impact on the physical properties of the devices. Memristors present an excellent example as a nonlinear and dynamic device with high speed and endurance required for electronic applications ranging from neuromorphic computing to nonvolatile memories. Herein we investigate the impact of atomic defects in sub-2 nm thick MgO/Al 2 O 3 atomic layer stack (ALS) memristors that use an M1 (switching layer)/M2 (oxygen vacancy reservoir layer) bilayer structure grown using in vacuo atomic layer deposition (iALD). Intriguingly, we revealed a direct correlation of the atomic defects in the M2 layer with the memristor dynamic behavior using a combined analysis of in situ scanning tunneling spectroscopy (iSTS) on the M2 layer and ex situ characterization on the memristors. Specifically, incomplete coverage of the 1st ALD atomic layer of M2 on the electrode yields defects at the M2/electrode interface. Despite the monotonic increase of ALD coverage, by almost three-fold from ~30% to >90%, at completion of the M2 layer of ~ 0.7 nm in thickness, the impact of the defects on the M2/electrode interface has been found detrimental to both memristor switching speed and endurance. Guided by atomistic simulation, we addressed the issue of interface defects via tuning of the Al surface hydroxylation to increase the first atomic layer ALD coverage to ~75%, leading to improved memristor switching speed and endurance by several orders of magnitude. In conclusion, these findings shed light on the correlation between the atomic defects and the dynamic behavior of sub-2 nm memristors and the importance of minimizing the atomic defects in memristors for future electronic applications.

Atomic Layer Deposition↗

DOE OSTI2023

Computational framework for modeling of physical process

Techniques, systems, and devices are described for providing a computational frame for estimating high-dimensional stochastic behaviors. In one exemplary aspect, a method for performing numerical estimation includes receiving a set of measurements of a stochastic behavior. The set of correlated measurements follows a non-standard probability distribution and is non-linearly correlated. Also, a non-linear relationship exists between a set of system variables that describes the stochastic behavior and a corresponding set of measurements. The method includes determining, based on the set of measurements, a numerical model of the stochastic behavior. The numerical model comprises a feature space comprising non-correlated features corresponding to the stochastic behavior. The non-correlated features have a dimensionality of M and the set of measurements has a dimensionality of N, M being smaller than N. The method includes generating a set of approximated system variables corresponding to the set of measurements based on the numerical model.

Chen, Xiao↗

DOE OSTI2024

Computational framework for modeling of physical process

Chen, Xiao↗

DOE OSTI2024

Advanced Closures for Nonlinear Fluid Simulations of Plasmas (Final Report)

Advanced Closures for Nonlinear Fluid Simulations of Plasmas E. Held, Utah State University (Principal Investigator) J.-Y. Ji, Utah State University (Co-Investigator) Utah State University (USU) continued to develop and apply closures for hybrid fluid/kinetic simulations of magnetized fusion plasmas. The closures developed by USU's fusion theory and computation group use the drift ordering and are referred to as "continuum" and "general moment" approaches. They differ in their representation for the distribution functions which probabilistically describe the density of particles in 5 dimensional phase space. The two chosen velocity variables, needed in studies of kinetic physics for magnetized plasmas, are the speed and the component of a particle's velocity along the magnetic field. In magnetized plasmas, the charged particle trajectories are tied closely to the magnetic field lines. Both approaches account for binary interactions between particles using the Coulomb collision operator. Theoretical and computational development along both lines provided avenues for verification between the two approaches. This funding allowed USU to further develop physically accurate and numerically efficient models that advance our understanding of kinetic physics in experiments like the International Thermonuclear Experimental Reactor (ITER). The ITER device will likely prove the physical practicality of thermonuclear fusion by producing 500 megawatts of clean, abundant fusion power. This work helped to realize this goal by advancing our simulation capability using hybrid fluid/kinetic models.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2025

Two-step spin-coating of vacancy-ordered double perovskites enables growth of thin films for electronic devices

Vacancy-ordered double perovskites (VODPs), such as Cs 2 TeX 6 (X = Cl, Br, I), are lead-free alternatives to conventional metal-halide perovskites (MHPs). One limitation of VODPs is the lack of processes to form thin films relevant for physical characterization and electronic devices. A two-step spin-coating method was developed for synthesizing high-quality films of Cs 2 TeBr 6 . Independently depositing CsBr and TeBr 4 enables high precursor concentrations and control over crystallization kinetics. By optimizing the spin-coating parameters, conversion of precursors to phase pure films was observed using structural and surface characterization methods. The growth of mixed-halide systems was investigated using alternative salts including CsCl and CsI. The formation of halide alloys was found to depend on the existence of routes to byproducts. Lastly, single carrier diodes of Cs2TeBr6 were designed following valence band characterization with photoelectron spectroscopy. Temperature-dependent space-charge-limited current measurements revealed that transport occurs by hopping and the hole mobility is 3.2 × 10 −5 cm 2 V −1 s −1 near room temperature. As a result, the insights from the 2-step procedure provide a pathway towards making semiconducting devices from VODPs.

Kuklinski, Owen [University of California, Santa B↗