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Results for “device characterization”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Effects of post-deposition CdCl 2 annealing on electronic properties of CdTe solar cells

The effects of post-deposition CdCl 2 annealing temperature on the electronic properties of CdTe solar cells were investigated. CdTe devices incorporate Mg doped ZnO as a buffer layer and selenization using a CdSe interlayer for reducing the buffer/absorber interface recombination and increasing solar energy absorption respectively. The post-deposition CdCl 2 annealing treatments were done under separate, inert atmospheres of nitrogen and helium across the temperature range 380 to 430 °C. Electrical characterization of devices is carried out including temperature dependent current-voltage characteristics, admittance spectroscopy, and Shockley-Read-Hall recombination analysis. Here, the best improvements in device efficiency are obtained upon annealing at temperature 410 °C. This anneal correlated with reduced back contact barrier in CdTe and reduced grain-boundary barrier height which is beneficial for enhanced charge transport.

14 SOLAR ENERGY↗
DOE OSTI2026

Operando microscopy for neuromorphic hardware

Microscopy techniques can uncover the physical properties and dynamic behaviours of materials, driving the discovery of emergent phenomena and guiding the design of next-generation computing hardware. As artificial intelligence becomes pervasive, the demand for high-performance materials to support sustainable information technologies is growing. Here, this Review highlights state-of-the-art imaging from electron and X-ray to optical techniques to probe the dynamics of neuromorphic materials, including operando characterization of devices. We examine design principles for neuromorphic materials, along with obstacles that hinder their development. Emphasis is placed on spatially and temporally resolved approaches that capture state changes including phase transitions, ferroic switching and spin-wave propagation that emulate biological components such as neurons, synapses and their connectivity. We discuss challenges in operando characterization and the integration of artificial intelligence-driven analysis for feedback-guided material discovery. Finally, we outline opportunities for real-time imaging of neuromorphic systems, paving the way towards adaptive, brain-inspired hardware.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS2023

2023 Astrophotonics Roadmap: Pathways to Realizing Multi-Functional Integrated Astrophotonic Instruments

Photonic technologies offer numerous functionalities that can be used to realize astrophotonic instruments. The most spectacular example to date is the ESO Gravity instrument at the Very Large Telescope in Chile that combines the light-gathering power of four 8 m telescopes through a complex photonic interferometer. Fully integrated astrophotonic devices stand to offer critical advantages for instrument development, including extreme miniaturization when operating at the diffraction-limit, as well as integration, superior thermal and mechanical stabilization owing to the small footprint, and high replicability offering significant cost savings. Numerous astrophotonic technologies have been developed to address shortcomings of conventional instruments to date, including for example the development of photonic lanterns to convert from multimode inputs to single mode outputs, complex aperiodic fiber Bragg gratings to filter OH emission from the atmosphere, complex beam combiners to enable long baseline interferometry with for example, ESO Gravity, and laser frequency combs for high precision spectral calibration of spectrometers. Despite these successes, the facility implementation of photonic solutions in astronomical instrumentation is currently limited because of (1) low throughputs from coupling to fibers, coupling fibers to chips, propagation and bend losses, device losses, etc, (2) difficulties with scaling to large channel count devices needed for large bandwidths and high resolutions, and (3) efficient integration of photonics with detectors, to name a few. In this roadmap, we identify 24 key areas that need further development. We outline the challenges and advances needed across those areas covering design tools, simulation capabilities, fabrication processes, the need for entirely new components, integration and hybridization and the characterization of devices. To realize these advances the astrophotonics community will have to work cooperatively with industrial partners who have more advanced manufacturing capabilities. With the advances described herein, multi-functional integrated instruments will be realized leading to novel observing capabilities for both ground and space based platforms, enabling new scientific studies and discoveries.

astrophotonics↗
NASA NTRS1973

Avalanche diodes for the generation of coherent radiation

Solid state devices and characterization, and optimum imbedding networks for realizing best performance were investigated along with a barrier injection transit time diode. These diodes were investigated for possible application as microwave amplifiers and oscillators. Measurements were made of diode noise figures in the frequency ranges of 4 - 6 GHz. Initial results indicate that a noise figure of 6 - 8 db may be possible. Optimum device structure and fabrication techniques necessary for low noise performance were investigated. Previously published documents on electrodynamics are included.

Penfield, P., Jr.↗
NASA NTRS1976

LaF3 infrared detector

A class of infrared detectors is proposed, and experimental results are presented for a prototype device. The material used is LaF3, an ionic conductor with a capacitance that varies exponentially with temperature. The detectivity of a prototype detector is estimated from measured signal voltages and incident power, and a Johnson noise voltage is calculated from the measured resistance. At a modulation frequency of 20 Hz, the estimated detectivity is about 2 million cm/sq root Hz/W. For the parameters characterizing this device, the estimated detectivity is consistent with a theoretical prediction. The theory further predicts an optimum detectivity of about 1 billion cm/sq root Hz/W for much thinner devices than the prototypes.

Sher, A.↗
DOE OSTI2020

Impact of nuclear reactor radiation on the performance of AlN/sapphire surface acoustic wave devices

The performance of an AlN/sapphire surface acoustic wave (SAW) delay line device was characterized in real time under irradiation inside a nuclear reactor. Both its resonant frequency and transmission efficiency were observed to respond to a change in reactor power. The response follows an exponentially saturating behavior after a step power increase, followed by an exponentially decaying recovery after reactor shutdown. A sensitivity analysis based on the governing electro-mechanical equations shows that the frequency shift can be attributed to the softening of sapphire’s elastic constants under neutron radiation. Additionally, a kinetic rate equation is adopted to interpret device response and describe its microstructural evolution. These results suggest that the AlN/sapphire SAW device remains functional under irradiation, is sensitive to neutron and gamma ray fluxes, and offers an opportunity for remote sensing and in-situ measurement of material properties when exposed to nuclear reactor environment.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
NASA NTRS1991

Silicon carbide, an emerging high temperature semiconductor

In recent years, the aerospace propulsion and space power communities have expressed a growing need for electronic devices that are capable of sustained high temperature operation. Applications for high temperature electronic devices include development instrumentation within engines, engine control, and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Other earth-based applications include deep-well drilling instrumentation, nuclear reactor instrumentation and control, and automotive sensors. To meet the needs of these applications, the High Temperature Electronics Program at the Lewis Research Center is developing silicon carbide (SiC) as a high temperature semiconductor material. Research is focussed on developing the crystal growth, characterization, and device fabrication technologies necessary to produce a family of silicon carbide electronic devices and integrated sensors. The progress made in developing silicon carbide is presented, and the challenges that lie ahead are discussed.

Matus, Lawrence G.↗
DOE OSTI2024

A Compact, Single Stage, >1 kV Medium-Voltage Line Impedance Stabilization Network

This paper presents the design of a single-phase, single-stage line impedance stabilization network (LISN) for medium-voltage (MV) applications. More than 1 kV rated widebandgap (WBG) power semiconductor switches are increasingly utilized in new, emerging power electronics energy systems to improve power density and efficiency. However, due to inherently fast-switching speeds, WBG switch modules emit considerable electromagnetic interference (EMI) (e.g., common mode (CM) or differential mode (DM)). State-of-the-art offers standardized LISN solutions to validate and certify the new energy system for electromagnetic compatibility (EMC). However, most are for low voltage applications (i.e., < 1 kV). MV LISNs (i.e., > 1 kV) are rare until recently and literature does not provide sufficient guidelines for designing and characterizing such devices. It has been a critical challenge for many scientists and engineers to reliably certify the emerging MV energy systems (e.g., electric ships and aircraft). This paper addresses such a technology gap. Specifically, a CISPR 16-1-2 compliant 50Ω/50μH LISN with 1.5kV, 75A and 30MHz measurement capability has been proposed. Detailed performance study versus non-linear parasitic parameters variations in MV inductors and capacitors have been done. Based on new understandings, novel techniques to intuitively mitigate unwanted parasitic have been proposed to develop the proposed LISN successfully. Thorough characterization of important LISN parameters are presented and factors influencing them are analyzed. A rigorous analysis, experimental tests, and in-depth comparisons over state-of-the-art have been made to validate the effectiveness. This is done through the state-of-the-art 300kVA MV EMI testbed.

42 ENGINEERING↗
DOE OSTI2022

Dynamics of superconducting qubit relaxation times

Superconducting qubits are a leading candidate for quantum computing but display temporal fluctuations in their energy relaxation times T 1 . This introduces instabilities in multi-qubit device performance. Furthermore, autocorrelation in these time fluctuations introduces challenges for obtaining representative measures of T 1 for process optimization and device screening. These T 1 fluctuations are often attributed to time varying coupling of the qubit to defects, putative two level systems (TLSs). In this work, we develop a technique to probe the spectral and temporal dynamics of T 1 in single junction transmons by repeated T 1 measurements in the frequency vicinity of the bare qubit transition, via the AC-Stark effect. Across 10 qubits, we observe strong correlations between the mean T 1 averaged over approximately nine months and a snapshot of an equally weighted T 1 average over the Stark shifted frequency range. These observations are suggestive of an ergodic-like spectral diffusion of TLSs dominating T 1 , and offer a promising path to more rapid T 1 characterization for device screening and process optimization.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Material exploration towards high quality factor microwave resonators

Niobium and aluminum have been widely used to realize superconducting resonators and qubits. However, the native oxide at the metal air interface limits the devices results. This layer is highly disordered, and it induces losses limiting the performances of the resonators or qubits. Recently, tantalum led to great improvement in qubit relaxation time. This improvement has been attributed to a thinner and less disordered oxide layer compared to Nb and Al. This study is aimed to limit the formation of the oxide layer, by the introduction of novel superconducting materials such as rhenium or by encapsulating the Nb surface with other superconducting materials such as Ta, Al, Re or other non-superconducting materials such as Au. To better understand the results, we are realizing these studies on coplanar waveguide resonators where the relation between surface losses and quality factor is clear. We are also analyzing different fabrication techniques to completely characterize our devices, linking material properties to the performances. In this work we are also varying the participation ratio of the devices in order to extract with higher fidelity and precision the losses introduced by the involved interfaces.

Crisa, F.↗
DOE OSTI2025

Creating and Probing Large Gap 2D Topological Insulators for Quantum Computing (Final Report)

Research under this award focused on experimental and theoretical efforts in developing and characterizing 2D topological insulators (TIs). Key areas of investigation included materials synthesis, device fabrication and characterization, and theoretical advancements. The team synthesized ZrTe 5 , a material with potential for TI phases. Additionally, the team pursued the synthesis of elemental thin films like Indene and Bismuthene, known for their large TI gaps. Indene was successfully stabilized on SiC. Another approach involved stacking and twisting transition metal dichalcogenides (TMDs) to engineer desired TI band structures. On the theoretical front, advancements made under this award predicted remarkable topological properties in twisted WSe2 bilayers, motivating experimental efforts to realize these states. Regarding device fabrication and characterization, significant progress was made in reducing contact resistance, crucial for reliable transport measurements. Contactless Pulsed Tunneling Spectroscopy (CPTS) was employed to study the electronic properties of WTe 2 and WSe 2 . However, challenges in device fabrication and electrode material selection hampered efforts to obtain desired spectra. Ancillary work, utilizing pulsed electrical methods, on the study of sliding ferroelectrics yielded impactful results demonstrating high speed operation and lack of degradation of devices after many billions of cycles.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
NASA NTRS1999

Autonomous Science Decision Making for Mars Sample Return

In the near future NASA intends to explore Mars in preparation for a sample return mission using robotic devices such as landers, rovers, orbiters, airplanes, and/or balloons. Such platforms will likely carry imaging devices to characterize the surface morphology, and a variety of analytical instruments intended to evaluate the chemical and mineralogical nature of the environment(s) that they encounter. Historically, mission operations have involved the following sequence of activities: (1) return of scientific data from the vehicle; (2) evaluation of the data by space scientists; (3) recommendations of the scientists regarding future mission activity; (4) transmission of commands to the vehicle to achieve this activity; and (5) new activity by the vehicle in response to those commands. This is repeated for the duration of the mission, with command opportunities once or perhaps twice per day. In a rapidly changing environment, such as might be encountered by a rover traversing hundreds of meters a day or an airplane soaring over several hundred of kilometers, this traditional cycle of data evaluation and commands is not amenable to rapid long range traverses, discovery of novelty, or rapid response to any unanticipated situations. In addition, to issues of response time, the nature of imaging and/or spectroscopic devices are such that tremendous data volumes can be acquired, for example during a traverse. These data volumes can rapidly exceed on-board memory capabilities prior to an opportunity to transmit it to Earth.

Roush, Ted L.↗
DOE OSTI2021

Optical and electrochemical effects of H 2 and O 2 bubbles at upward-facing Si photoelectrodes

The effects of the size, contact-angle, and coverage of gas bubbles on solar fuels devices were characterized at cm-scale, upward-facing planar and microwire-array Si photoelectrodes in stagnant electrolytes. Experimental measurements were supported by ray-tracing simulations of surface attached gas bubble films. A dilute, redox-active tracer allowed for the quantification of the mass-transport effects of bubble coverage during photoanodic O 2 (g) evolution at upward-facing photoanodes in 1.0 M KOH(aq.). Measurements of the gas coverage at upward-facing p-Si photocathodes in 0.50 M H 2 SO 4 (aq.) allowed for the nucleation rate and contact angle of H 2 (g) bubbles to be evaluated for systems having various surface free energies. Under simulated solar illumination, the rapid departure of small O 2 (g) bubbles produced stable photocurrents at upward-facing oxygen-evolving Si photoanodes and yielded increased mass-transport velocities relative to a stagnant electrolyte, indicating that bubbles can provide a net benefit to the photoelectrochemical performance of an upward-facing photoanode in solar fuels devices.

14 SOLAR ENERGY↗
NASA NTRS2004

Making Precise Resonators for Mesoscale Vibratory Gyroscopes

An alternative approach to the design and fabrication of vibratory gyroscopes is founded on the use of fabrication techniques that yield best results in the mesoscopic size range, which is characterized by overall device dimensions of the order of a centimeter. This approach stands in contradistinction to prior approaches in (1) the macroscopic size range (the size range of conventional design and fabrication, characterized by overall device dimensions of many centimeters) and (2) the microscopic size range [the size range of microelectromechanical systems (MEMS), characterized by overall device dimensions of the order of a millimeter or less]. The mesoscale approach offers some of the advantage of the MEMS approach (sizes and power demands smaller than those of the macroscale approach) and some of the advantage of the macroscale approach (the possibility of achieving relative dimensional precision greater than that of the MEMS approach). Relative dimensional precision is a major issue in the operation of a vibratory gyroscope. The heart of a vibratory gyroscope is a mechanical resonator that is required to have a specified symmetry in a plane orthogonal to the axis about which rotation is to be measured. If the resonator could be perfectly symmetrical, then in the absence of rotation, a free vibration of the resonator could remain fixed along any orientation relative to its housing; that is, the gyroscope could exhibit zero drift. In practice, manufacturing imprecision gives rise to some asymmetry in mass, flexural stiffness or dissipation, resulting in a slight drift or beating motion of an initial vibration pattern that cannot be distinguished from rotation. In the mesoscale approach, one exploits the following concepts: For a given amount of dimensional error generated in manufacturing, the asymmetry and hence the rate-of-rotation drift of the gyroscope can be reduced by increasing the scale. The decrease in asymmetry also reduces coupling of vibrations to the external environment. Mechanical thermal noise and electronic measurement noise and drift can also be reduced by increasing the size of the resonator and its associated sensors.

Yang, Eui-Hyeok↗
DOE OSTI2026

New perspectives on materials and device dynamics using time-resolved full-field diffraction X-ray imaging

Understanding how materials evolve during synthesis, processing, or device operation requires experimental access to structural dynamics across wide ranges of length and time scales, often in bulk samples or even within packaged devices. Time-resolved full-field diffraction X-ray microscopy has recently emerged as a powerful way to meet this need by combining the penetration and structural sensitivity of X-ray diffraction with objective-lens-based magnification, sensitive high-resolution X-ray imaging detectors, and pump-probe and real-time imaging strategies. Advances in full-field X-ray diffraction microscopy, often termed dark-field X-ray microscopy (DFXM), enable simultaneous imaging of extended fields of view while retaining crystallographic selectivity. Time-resolved DFXM promises to enable advances in materials processing and dynamics, electrochemical and photochemical processes, and the design of electronic devices. This Perspective summarizes the key instrumental concepts that define the performance of these methods, including the choice of imaging optics, detector considerations, and the impact of source time structure at synchrotron light sources and X-ray free-electron lasers (XFELs). We discuss the simultaneous use of complementary imaging modes that are increasingly used in practice. The early demonstrations of the potential of time-resolved DFXM include real-time defect and grain-boundary dynamics during metal annealing, stroboscopic imaging of functional devices with high strain sensitivity, and ultrafast pump-probe implementations at XFELs that directly visualize acoustic-wave propagation and energy dissipation in bulk crystals.

Dark-field X-ray microscopy↗
DOE OSTI2022

Fabrication and accelerated long-term stability test of asymmetrical hollow fiber-supported thin film oxygen separation membrane

Asymmetrical hollow fiber-supported thin film membrane may provide microstructural advantages for air separation and oxygen production. The fabrication of such a membrane is usually very difficult, particularly the sintering behaviors and thermal expansion coefficient (TEC) mismatch among multiple layers. This directly affects the reliability and long-term stability of the membrane. Here, in this research, the sintering behaviors of a set of simple oxides are systematically studied and ZnO is identified as a material component for composite substrate La 0.6 Sr 0.4 Co 0.2 Fe 0.8 O 3-δ (LSCF)-ZnO. The LSCF-ZnO ratios are further optimized by trading off several factors, e.g., matching the sintering behaviors and TECs of the LSCF-ZnO composite with those of LSCF thin film separation layer while enhancing the substrate strength. With the identified LSCF-ZnO ratio, the LSCF-ZnO composite hollow fiber substrate precursor is formed through slurry spinning process with porous microstructure being formed via phase inversion process. The thin film LSCF dense separation layer is then dip-coated on the substrate followed by co-sintering process. A thin, porous PrBaCo(Fe 0.6 Zr 0.2 Y 0.2 )O 5+δ (PBCFZY) catalyst layer is fabricated on the dense LSCF separation layer with dip-coating and sintering process, forming an asymmetrical membrane device LSCF-ZnO/LSCF/PBCFZY. Oxygen permeation test of the device is systematically conducted, and the fundamental mechanisms are analyzed. An accelerated long-term stability test of the membrane is also conducted (~550h, 46 thermal cycling loads), demonstrating excellent robustness and durability. The device is characterized and analyzed before and after the test. By replacing a considerable amount of high cost LSCF with low cost ZnO in the substrate, it not only enhances the stability but also reduces the capital cost of the membrane for practical applications.

42 ENGINEERING↗
DOE OSTI2025

Characterization of 4H-SiC Low Gain Avalanche Detectors (LGADs)

4H-SiC Low Gain Avalanche Detectors (LGADs) have been fabricated and characterized. The devices employ a circular mesa design with low-resistivity contacts and an SiO 2 passivation layer. The I–V and C–V characteristics of the 4H-SiC LGADs are compared with complementary 4H-SiC PiN diodes to confirm a high breakdown voltage and low leakage current. Both LGADs and PiN diodes were irradiated with alpha particles from a $^{210}_{84}$Po source. The charge collected by each device was compared, and it was observed that low-gain charge carrier multiplication is achieved in the 4H-SiC LGAD.

43 PARTICLE ACCELERATORS↗