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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
NASA NTRS1990

Development of a unique laboratory standard indium gallium arsenide detector for the 500 to 1700 micron spectral region, phase 2

In the course of this work, 5 mm diameter InGaAs pin detectors were produced which met or exceeded all of the goals of the program. The best results achieved were: shunt resistance of over 300 K ohms; rise time of less than 300 ns; contact resistance of less than 20 ohms; quantum efficiency of over 50 percent in the 0.5 to 1.7 micron range; and devices were maintained and operated at 125 C without deterioration for over 100 hours. In order to achieve the goals of this program, several major technological advances were realized, among them: successful design, construction and operation of a hydride VPE reactor capable of growing epitaxial layers on 2 inch diameter InP substrates with a capacity of over 8 wafers per day; wafer processing was upgraded to handle 2 inch wafers; a double layer Si3N4/SiO2 antireflection coating which enhances response over the 0.5 to 1.7 micron range was developed; a method for anisotropic, precisely controlled CH4/H2 plasma etching for enhancement of response at short wavelengths was developed; and electronic and optical testing methods were developed to allow full characterization of detectors with size and spectral response characteristics. On the basis of the work and results achieved in this program, it is concluded that large size, high shunt resistance, high quantum efficiency InGaAs pin detectors are not only feasible but also manufacturable on industrial scale. This device spans a significant portion of visible and near infrared spectral range and it will allow a single detector to be used for the 0.5 to 1.7 micron spectral region, rather than the presently used silicon (for 0.5 to 1.1 microns) and germanium (0.8 to 1.7 microns).

Ban, Vladimir S.↗
NASA NTRS1988

Responsivity of silicon photodiodes from 0.5 to 1.1 micron at 77 K

The responsivities of Si, Ge, and InSb photodiodes at 77 K are measured and compared. The results are used to determine the wavelength at which a change should occur in the detector materials used in the focal plan of the Mars Observer Visual and IR Mapping Spectrometer (VIMS). Quantitative responsivity data for Si photodiodes in the band from 0.5 to 1.1 were needed for the VIMS system analysis. The results show that the Si array for the focal plane should have two different antireflection coatings. It is found that the Si and InSb materials have equivalent quantum efficiencies at about 0.9 microns. Because of unknown signal chain complications that could be caused by a multiplexer accessing two different capacitances, the focal plane was designed with a change from Si to InSb at 1 micron.

Staller, C.↗
NASA NTRS1988

A V-grooved GaAs solar cell

V-grooved GaAs solar cells promise the benefits of improved optical coupling, higher short-circuit current, and incrased tolerance to particle radiation compared to planar cells. A GaAs homojunction cell was fabricated by etching a V-groove pattern into an n-epilayer (2.1 x 10 to the 17th power per cu cm) grown by metalorganic chemical vapor deposition (MOCVD) on an n+ substrate (2.8 x 10 to the 18th power per cu cm) and then depositing an MOCVD p epilayer (4.2 x 10 to the 18th power per cu cm). Reflectivity measurements on cells with and without an antireflective coating confirm the expected decrease in reflectance of the microgrooved cell compared to the planar structure. The short-circuit current of the V-grooved solar cell was 13 percent higher than that of the planar control.

Bailey, S. G.↗
NASA NTRS1990

Design of superlattice termination layers

Problems associated with quantum mechanical reflection of miniband carriers at the ends of superlattices are examined. Moebius transformations which map miniband Bloch wave reflectivity into plane wave reflectivity and vice versa are derived. These transformations facilitate the design of blocking and antiblocking layers which are analogous to reflective and antireflective coatings on optical elements. An example of termination layer design which is easy to implement is given. Applications include superlattice infrared detector design.

Coon, D. D.↗
NASA NTRS1991

InP/Ga0.47In0.53As monolithic, two-junction, three-terminal tandem solar cells

The work presented has focussed on increasing the efficiency of InP-based solar cells through the development of a high-performance InP/Ga(0.47)In(0.53)As two-junction, three-terminal monolithic tandem cell. Such a tandem is particularly suited to space applications where a radiation-hard top cell (i.e., InP) is required. Furthermore, the InP/Ga(0.47)In(0.53)As materials system is lattice matched and offers a top cell/bottom cell bandgap differential (0.60 eV at 300 K) suitable for high tandem cell efficiencies under AMO illumination. A three-terminal configuration was chosen since it allows for independent power collection from each subcell in the monolithic stack, thus minimizing the adverse impact of radiation damage on the overall tandem efficiency. Realistic computer modeling calculations predict an efficiency boost of 7 to 11 percent from the Ga(0.47)In(0.53)As bottom cell under AMO illumination (25 C) for concentration ratios in the 1 to 1000 range. Thus, practical AMO efficiencies of 25 to 32 percent appear possible with the InP/Ga(0.47)In(0.53)As tandem cell. Prototype n/p/n InP/Ga(0.47)In(0.53)As monolithic tandem cells were fabricated and tested successfully. Using an aperture to define the illuminated areas, efficiency measurements performed on a non-optimized device under standard global illumination conditions (25 C) with no antireflection coating (ARC) give 12.2 percent for the InP top cell and 3.2 percent for the Ga(0.47)In(0.53)As bottom cell, yielding an overall tandem efficiency of 15.4 percent. With an ARC, the tandem efficiency could reach approximately 22 percent global and approximately 20 percent AMO. Additional details regarding the performance of individual InP and Ga(0.47)In(0.53)As component cells, fabrication and operation of complete tandem cells and methods for improving the tandem cell performance, are also discussed.

Wanlaas, M. W.↗
NASA NTRS1991

A comparative study of performance parameters of n(+)-p InP solar cells made by closed-ampoule sulfur diffusion into Cd- and Zn-doped p-type InP substrates

Preliminary results indicate that Cd-doped substrates are better candidates for achieving high efficiency solar cells fabricated by closed-ampoule sulfur (S) diffusion than Zn-doped substrates. The differences in performance parameters (i.e., 14.3 percent efficiency for Cd-doped vs. 11.83 percent in the case of Zn-doped substrates of comparable doping and etch pit densities) were explained in terms of a large increase in dislocation density as a result of S diffusion in the case of Zn-doped as compared to Cd-doped substrates. The In(x)S(y) and probably Zn(S) precipitates in the case of Zn-doped substrates, produce a dead layer which extends deep below the surface and strongly affects the performance parameters. It should be noted that the cells had an unoptimized single layer antireflective coating of SiO, a grid shadowing of 6.25 percent, and somewhat poor contacts, all contributing to a reduction in efficiency. It is believed that by reducing the external losses and further improvement in cell design, efficiencies approaching 17 percent at 1 AMO, 25 degrees should be possible for cells fabricated on these relatively high defect density Cd-doped substrates. Even higher efficiencies, 18 to 19 percent should be possible by using long-lifetime substrates and further improving front surface passivation. If solar cells fabricated on Cd-doped substrates turn out to have comparable radiation tolerance as those reported in the case of cells fabricated on Zn-doped substrates, then for certain space missions 18 to 19 percent efficient cells made by this method of fabrication would be viable.

Faur, Mircea↗
NASA NTRS1990

Peeled film GaAs solar cell development

Thin-film, single-crystal gallium arsenide (GaAs) solar cells could exhibit a specific power approaching 700 W/kg including coverglass. A simple process has been described whereby epitaxial GaAs layers are peeled from a reusable substrate. This process takes advantage of the extreme selectivity of the etching rate of aluminum arsenide (AlAs) over GaAs in dilute hydrofluoric acid. The feasibility of using the peeled film technique to fabricate high-efficiency, low-mass GaAs solar cells is presently demonstrated. A peeled film GaAs solar cell was successfully produced. The device, although fractured and missing the aluminum gallium arsenide window and antireflective coating, had a Voc of 874 mV and a fill factor of 68 percent under AM0 illumination.

Wilt, D. M.↗
NASA NTRS1990

Quantum efficiency measurements of Tektronix backside thinned CCDs

Results are presented of a program in progress to produce CCDs with high stable quantum efficiency (QE). Measurements made at 253.7 nm over a six-month period showed no significant QE difference between two CCDs manufactured in 1989 and one manufactured in 1988. QE improvement by the addition of a two-layer antireflection coating is about threefold at 400 nm.

Delamere, Alan↗
NASA NTRS1992

Theoretical model for frequency locking a diode laser with a Faraday cell

A new method was developed for frequency locking a diode lasers, called 'the Faraday anomalous dispersion optical transmitter (FADOT) laser locking', which is much simpler than other known locking schemes. The FADOT laser locking method uses commercial laser diodes with no antireflection coatings, an atomic Faraday cell with a single polarizer, and an output coupler to form a compound cavity. The FADOT method is vibration insensitive and exhibits minimal thermal expansion effects. The system has a frequency pull in the range of 443.2 GHz (9 A). The method has potential applications in optical communication, remote sensing, and pumping laser excited optical filters.

Wanninger, P.↗
NASA NTRS1979

A low-cost solar-cell front contact using trapped silver mesh and electrostatic bonding

A new system to provide a contact with a silver mesh trapped between the cell and an encapsulating glass cover is described. Borosilicate glass is joined to the cell by electrostatic bonding during which the glass is deformed around the silver mesh to form a permanent optically coupled integral bond to the cell. The hermetic seal prevents the silver from oxidizing and destroying the electrical contact formed during the bonding process. It is demonstrated that electrostatic glass/silicon bonds have excellent stability under a variety of accelerated environmental tests. Electrostatic bonds to thin films of AL2O3, Ta2O5, and ZrO2 on glass can be used to make antireflective coatings for solar cells manufactured by this process. Test solar cells were manufactured by electrostatic bonding with good curve fill factors and efficiencies of 10 percent.

Landis, Geoffrey A.↗
NASA NTRS1991

High voltage thermally diffused p(+)n solar cells

The possibility of fabricating thermally diffused p(+)n InP solar-cells with high open-circuit voltage without sacrificing the short circuit current is discussed. The p(+)n InP junctions were formed by Cd and Zn diffusion through a 3-5-nm-thick anodic or chemical phosphorus-rich oxide cap layer grown on n:InP:S (with ND-NA = 3.5 x 10 exp 16 and 4.5 x 10 exp 17/cu cm) Czochralski LEC-grown substrates. After thinning the emitter from its initial thickness of 1 to 2.5 micron down to 0.06-0.15 micron, the maximum efficiency was found when the emitter was 0.2 to 0.3 micron thick. Typical AM0, 25 C values of 854-860 mV were achieved for Voc, Jsc values were from 25.9 to 29.1 mA/sq cm using only the P-rich passivating layer left after the thinning process as an antireflection coating.

Faur, M.↗
NASA NTRS1992

Results from testing and analysis of solar cells flown on LDEF

A brief discussion of the solar cell experiments flown on the Long Duration Exposure Facility (LDEF) is provided. The information presented is a collation of results published by the various experimenters. This process of collation and documentation is an ongoing Systems Special Investigation Group (SIG) effort. There are four LEO environments, operating individually and/or synergistically, that cause performance loss in solar cells: meteoroid and space debris, atomic oxygen, ultraviolet radiation, and charged particle radiation. In addition, the effects of contamination caused by outgassing of materials used on the specific spacecraft play a role in decreasing the light being transmitted through the coverglass and adhesive to the solar cell. From the results presented on the solar cells aboard LDEF, the most extensive degradation of the solar cells came from impacts and the resulting cratering. The extent of the damage to the solar cells was largely dependent upon the size and energy of the meteoroids or space debris. The other cause of degradation was reduced light reaching the solar cell. This was caused by contamination, UV degradation of coverglass adhesive, and/or atomic oxygen/UV degradation of antireflection coatings.

Dursch, Harry↗
NASA NTRS1992

Faraday anomalous dispersion optical tuners

Common methods for frequency stabilizing diode lasers systems employ gratings, etalons, optical electric double feedback, atomic resonance, and a Faraday cell with low magnetic field. Our method, the Faraday Anomalous Dispersion Optical Transmitter (FADOT) laser locking, is much simpler than other schemes. The FADOT uses commercial laser diodes with no antireflection coatings, an atomic Faraday cell with a single polarizer, and an output coupler to form a compound cavity. This method is vibration insensitive, thermal expansion effects are minimal, and the system has a frequency pull in range of 443.2 GHz (9A). Our technique is based on the Faraday anomalous dispersion optical filter. This method has potential applications in optical communication, remote sensing, and pumping laser excited optical filters. We present the first theoretical model for the FADOT and compare the calculations to our experimental results.

Wanninger, P.↗
NASA NTRS1993

Japanese aerospace science and technology 1992. A bibliography with indexes

This report contains 4271 annotated references to reports and journal articles of Japaness intellectual origin entered into the NASA scientific and technical information system during 1992. Representative subject areas of interest include: adaptive control, antireflection coatings, fiber reinforced composites, gallium arsenide lasers, laser interferometry, reduced gravity (microgravity), and VHSIC (circuits).

Source record↗
NASA NTRS1995

High efficient radiation stable AlGaAs/GaAs solar cells with internal Bragg reflector

An investigation of solar cells based on AlGaAs/GaAs heterostructures with an internal Bragg reflector as the back-surface reflector is presented. The Bragg reflector is grown by low pressure metalorganic chemical vapor deposition on n-GaAs substrates in a horizontal resistively heated reactor. The Bragg reflector with its maximum reflectance centered at a wavelength of 860 nm consists of 12 pairs of AlAs/GaAs layers. The resulting Bragg reflector has a thickness of 0.072 micrometers for AlAs and 0.059 micrometers for GaAs. The multi-layered quasi-dielectric stack selectively reflects weakly absorbed photons with energies near to the GaAs band gap for a second pass through the photoactive region, thus increasing the photocurrent. The use of the Bragg reflector allows the external quantum efficiency to be increased in the long wavelength of the spectrum. The use of the Bragg reflector and an antireflective coating and prismatic cover allowed an efficiency of 23.4 percent to be obtained.

Andreev, V. M.↗
NASA NTRS1998

Broadband Infrared Antireflection Structured Silicon Surfaces

Silicon and germanium are materials often used for IR windows and optical elements. However they have a very high index of refraction, in the order of three to four, which causes large reflection losses on each surface. These losses are especially high under large angles of incidence which are often desirable if signals are faint and fast optics are to be used. Solid antireflection coatings are either not available because materials with appropriate index of refraction do not exist, or their use is limited to a small wavelength range and small angles of incidence. We will present the status of our work to calculate, create, and test the performance of graded structures in Si to reduce its surface reflection. The structures are expected to work over the very broad wavelength range of 10 microns to 1000 microns and a wide range of angle of incidence. We have identified several high aspect ratio MEMS process techniques to create the structures and have done 3D electromagnetic modeling, which predicts significant effects. Measurements on different samples have validated our modeling.

Stewart, Kenneth↗
NASA NTRS1999

Broadband Infrared Antireflection Structured Silicon Surfaces

Silicon and germanium are materials often used for IR windows and optical elements. However they have a very high index of refraction, in the order of three to four, which causes large reflection losses on each surface. These losses are especially high under large angles of incidence which are often desirable if signals are faint and fast optics are to be used. Solid antireflection coatings are either not available because materials with appropriate index of refraction do not exist, or their use is limited to a small wavelength range and small angles of incidence. We will present the status of our work to calculate, create, and test the performance of graded structures in Si to reduce its surface reflection. The structures are expected to work over the very broad wavelength range of 10 to 1000 micrometers and a wide range of angle of incidence. We have identified several high aspect ratio MEMS process techniques to Create the structures and have done 3D electromagnetic modeling, which predicts significant effects. Measurements on different samples have validated our modeling.

Stewart, Kenneth↗
NASA NTRS1999

Broadband Infrared Antireflection Structured Silicon Surfaces

Silicon and germanium are materials often used for infrared (IR) windows and optical elements. However they have a very high index of refraction, in the order of three to four, which causes large reflection losses on each surface. These losses are especially high under large angles of incidence which are often desirable if signals are faint and fast optics are to be used. Solid antireflection coatings are either not available because materials with appropriate index of refraction do not exist, or their use is limited to a small wavelength range and small angles of incidence. We will present the status of our work to calculate, create, and test the performance of graded structures in Si to reduce its surface reflection. The structures are expected to work over the very broad wavelength range of 10 micron to 1000 micron and a wide range of angle of incidence. We.have identified several high aspect ratio MEMS process techniques to create the structures and have done 3D electromagnetic modeling, which predicts significant effects. Measurements on different samples have validated our modeling.

Stewart, Kenneth↗