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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
NASA NTRS1979

State-of-the-art performance of GaAlAs/GaAs avalanche photodiodes

Ga(0.15)Al(0.85)As/GaAs avalanche photodiodes have been successfully fabricated. The performance of these detectors is characterized by a rise time of less than 35 ps, an external quantum efficiency with an antireflection coating of 95% at 0.53 microns, and a microwave optical gain of 42 dB. The dark current density is in the low range (10 to the minus A/sq cm) at one-half the breakdown voltages, and rises to 0.0001 A/sq cm at 42 dB optical gain.

Law, H. D.↗
NASA NTRS1980

Thermal performance evaluation of the Suncatcher SH-11 (liquid) solar collector

The procedures used and the results obtained during the evaluation test program on the Solar Unlimited, Inc., Suncatcher SH-11 (liquid) solar collector are presented. The flat-plate collector case assembly is made of .08 inch aluminum 3003 H14 riveted with fiberglass board insulation. The absorber consists of collared aluminum fins mechanically bonded to 3/8 inch copper tubing and coated with 3M Nextel black. Water is used as the working fluid. The glazing is made of a single glass, 1/8 inch water white, tempered and antireflective. The collector weight is 85 pounds with overall external dimensions of about 35.4 in x 82.0 in x 4.0 in. Thermal performance data on the Solar Unlimited Suncatcher SH-11 solar collector under simulated conditions were conducted using the MSFC Solar Simulator.

Source record↗
NASA NTRS1980

Glass for low-cost photovoltaic solar arrays

Various aspects of glass encapsulation that are important for the designer of photovoltaic systems are discussed. Candidate glasses and available information defining the state of the art of glass encapsulation materials and processes for automated, high volume production of terrestrial photovoltaic devices and related applications are presented. The criteria for consideration of the glass encapsulation systems were based on the low-cost solar array project goals for arrays: (1) a low degradation rate, (2) high reliability, (3) an efficiency greater than 10 percent, (4) a total array price less than $500/kW, and (5) a production capacity of 500,000 kW/yr. The glass design areas discussed include the types of glass, sources and costs, physical properties, and glass modifications, such as antireflection coatings.

Bouquet, F. L.↗
NASA NTRS1980

Tailored emitter, low-resistivity, ion-implanted silicon solar cells

Open-circuit voltages as high as 0.645 V (AM0, 25 C) have been obtained by a new process developed for low-resistivity silicon. The process utilizes high-dose phosphorus implantation followed by furnace annealing and simultaneous oxide growth. The effect of the thermally grown oxide is a reduction of surface recombination velocity; the oxide also acts as a moderately efficient antireflection (AR) coating. Boron-doped, float-zone silicon with resistivities from 0.1 to 1.0 (omega)(cm) has been processed according to this sequence; results show that the highest open-circuit voltage is obtained with 0.1(omega)(cm) starting material. The effects of Auger recombination and bandgap narrowing caused by high doping concentrations in the n(+)junction region have been investigated by implanting phosphorus over a wide range of dose levels. The effects of emitter-phosphorus concentrations tailored to optimize electric fields in the emitter have also been investigated.

Minnucci, J. A.↗
NASA NTRS1980

Anti-reflection coatings on large area glass sheets

Antireflective coatings which may be suitable for use on the covers of photovoltaic solar modules can be easily produced by a dipping process. The coatings are applied to glass by drawing sheets of glass vertically out of dilute aqueous sodium silicate solutions at a constant speed, allowing the adherent liquid film to dry, then exposing the dried film to concentrated sulfuric acid, followed by a water rinse and dry. The process produces coatings of good optical performance (96.7 percent peak transmission at 0.540 mu M wavelength) combined with excellent stain and soil resistance, and good resistance to abrasion. The process is reproduceable and easily controlled.

Pastirik, E.↗
NASA NTRS1981

High-efficiency thin-film GaAs solar cells, phase2

Thin GaAs epi-layers with good crystallographic quality were grown using a (100) Si-substrate on which a thin Ge epi-interlayer was grown by CVD from germane. Both antireflection-coated metal oxide semiconductor (AMOS) and n(+)/p homojunction structures were studied. The AMOS cells were fabricated on undoped-GaAs epi-layers deposited on bulk poly-Ge substrates using organo-metallic CVD film-growth, with the best achieved AM1 conversion efficiency being 9.1%. Both p-type and n(+)-type GaAs growth were optimized using 50 ppm dimethyl zinc and 1% hydrogen sulfide, respectively. A direct GaAs deposition method in fabricating ultra-thin top layer, epitaxial n(+)/p shallow homojunction solar cells on (100) GaAs substrates (without anodic thinning) was developed to produce large area (1 sq/cm) cells, with 19.4% AM1 conversion efficiency achieved. Additionally, an AM1 conversion efficiency of 18.4% (17.5% with 5% grid coverage) was achieved for a single crystal GaAs n(+)/p cell grown by OM-CVD on a Ge wafer.

Yeh, Y. C. M.↗
NASA NTRS1980

Solar cells and modules from dentritic web silicon

Some of the noteworthy features of the processes developed in the fabrication of solar cell modules are the handling of long lengths of web, the use of cost effective dip coating of photoresist and antireflection coatings, selective electroplating of the grid pattern and ultrasonic bonding of the cell interconnect. Data on the cells is obtained by means of dark I-V analysis and deep level transient spectroscopy. A histogram of over 100 dentritic web solar cells fabricated in a number of runs using different web crystals shows an average efficiency of over 13%, with some efficiencies running above 15%. Lower cell efficiency is generally associated with low minority carrier time due to recombination centers sometimes present in the bulk silicon. A cost analysis of the process sequence using a 25 MW production line indicates a selling price of $0.75/peak watt in 1986. It is concluded that the efficiency of dentritic web cells approaches that of float zone silicon cells, reduced somewhat by the lower bulk lifetime of the former.

Campbell, R. B.↗
NASA NTRS1980

A low-cost photovoltaic cell process based on thick film techniques

The low-cost, easily automated processing for solar cell fabrication being developed at Spectrolab for the DOE LSA program is described. These processes include plasma-etching, spray-on diffusion sources and antireflective coating, thick film metallization, aluminum back contacts, laser scribing and ultrasonic soldering. The process sequence has been shown to produce solar cells having 15% conversion efficiency at AM1 which meet the cell fabrication budget required for the DOE 1986 cost goal of $0.70 per peak watt in 1980.

Mardesich, N.↗
NASA NTRS1980

Epitaxial and polycrystalline GaAs solar cells using OM-CVD techniques

GaAs epitaxial films were grown by chemical vapor deposition using organo-metallic sources (OM-CVD) on single crystal and polycrystalline bulk GaAs, as well as on bulk polycrystalline and recrystallized thin-film Ge substrates. Details of Antireflecting Metal-Oxide-Semiconductor (AMOS) solar cells fabricated on GaAs films grown on bulk polycrystalline Ge and recrystallized Ge thin-film substrates will be discussed, as well as preliminary photovoltaic results obtained for n(+)/p homojunction structures.

Yeh, Y. C. M.↗
NASA NTRS1981

A quantitative method for photovoltaic encapsulation system optimization

It is pointed out that the design of encapsulation systems for flat plate photovoltaic modules requires the fulfillment of conflicting design requirements. An investigation was conducted with the objective to find an approach which will make it possible to determine a system with optimum characteristics. The results of the thermal, optical, structural, and electrical isolation analyses performed in the investigation indicate the major factors in the design of terrestrial photovoltaic modules. For defect-free materials, minimum encapsulation thicknesses are determined primarily by structural considerations. Cell temperature is not strongly affected by encapsulant thickness or thermal conductivity. The emissivity of module surfaces exerts a significant influence on cell temperature. Encapsulants should be elastomeric, and ribs are required on substrate modules. Aluminum is unsuitable as a substrate material. Antireflection coating is required on cell surfaces.

Garcia, A., III↗
NASA NTRS1981

Glass as encapsulation for low-cost photovoltaic solar arrays

In photovoltaic systems, the encapsulant material that protects the solar cells should be highly transparent and very durable. Glass satisfies these two criteria and is considered a primary candidate for low-cost, photovoltaic encapsulation systems. In this paper, various aspects of glass encapsulation are treated that are important for the designer of photovoltaic systems. Candidate glasses and available information defining the state of the art of glass encapsulation materials and processes for automated, high volume production of terrestrial photovoltaic devices and related applications are presented. The desired characteristics of glass encapsulation are (1) low degradation rates, (2) high transmittance, (3) high reliability, (4) low-cost, and (5) high annual production capacity. The glass design areas treated herein include the types of glass, sources, prices, physical properties and glass modifications, such as antireflection coatings.

Bouquet, F. L.↗
NASA NTRS1981

Silicon solar cell process development, fabrication, and analysis

Work has progressed in fabrication and characterization of solar cells from ubiquitous crystallization process (UCP) wafers and LASS ribbons. Gettering tests applied to UCP wafers made little change on their performance compared with corresponding baseline data. Advanced processes such as shallow junction (SJ), back surface field (BSF), and multilayer antireflection (MLAR) were also applied. While BSF by Al paste had shunting problems, cells with SJ and BSF by evaporated Al, and MLAR did achieve 14.1% AMI on UCP silicon. The study of LASS material was very preliminary. Only a few cells with SJ, BSR, (no BSF) and MLAR were completed due to mechanical yield problems after lapping the material. Average efficiency was 10.7% AMI with 13.4% AMI for CZ controls. Relatively high minority carrier diffusion lengths were obtained. The lower than expected Jsc could be partially explained by low active area due to irregular sizes.

Yoo, H. I.↗
NASA NTRS1981

A Module Experimental Process System Development Unit (MEPSDU)

Design work for a photovoltaic module, fabricated using single crystal silicon dendritic web sheet material, resulted in the identification of surface treatment to the module glass superstrate which improved module efficiencies. A final solar module environmental test, a simulated hailstone impact test, was conducted on full size module superstrates to verify that the module's tempered glass superstrate can withstand specified hailstone impacts near the corners and edges of the module. Process sequence design work on the metallization process selective, liquid dopant investigation, dry processing, and antireflective/photoresist application technique tasks, and optimum thickness for Ti/Pd are discussed. A noncontact cleaning method for raw web cleaning was identified and antireflective and photoresist coatings for the dendritic webs were selected. The design of a cell string conveyor, an interconnect feed system, rolling ultrasonic spot bonding heat, and the identification of the optimal commercially available programmable control system are also discussed. An economic analysis to assess cost goals of the process sequence is also given.

Source record↗
NASA NTRS1982

Process Research ON Semix Silicon Materials (PROSSM)

A cost effective process sequence was identified, equipment was designed to implement a 6.6 MW per year automated production line, and a cost analysis projected a $0.56 per watt cell add-on cost for this line. Four process steps were developed for this program: glass beads back clean-up, hot spray antireflective coating, wave soldering of fronts, and ion milling for edging. While spray dopants were advertised as an off the shelf developed product, they were unreliable with shorter than advertised shelf life.

Wohlgemuth, J. H.↗
NASA NTRS1982

Development of technique for AR coating and nickel and copper metallization of solar cells. FPS Project: Product development

Printed nickel overplated with copper and applied on top of a predeposited silicon nitride antireflective coating system for metallizing solar cells was analyzed. The ESL D and E paste formulations, and the new formulations F, G, H, and D-1 were evaluated. The nickel thick films were tested after firing for stability in the cleaning and plating solutions used in the Vanguard-Pacific brush plating process. It was found that the films are very sensitive to the leaning and alkaline copper solutions. Less sensitivity was displayed to the neutral copper solution. Microscopic and SEM observations show segregation of frit at the silicon nitride thick film interface with loose frit residues after lifting off plated grid lines.

Taylor, W.↗
NASA NTRS1982

Method of Fabricating Schottky Barrier solar cell

On a thin substrate of low cost material with at least the top surface of the substrate being electrically conductive is deposited a thin layer of heavily doped n-type polycrystalline germanium, with crystalline sizes in the submicron range. A passivation layer may be deposited on the substrate to prevent migration of impurities into the polycrystalline germanium. The polycrystalline germanium is recrystallized to increase the crystal sizes in the germanium layer to not less than 5 micros to serve as a base layer on which a thin layer of gallium arsenide is vapor epitaxially grown to a selected thickness. A thermally-grown oxide layer of a thickness of several tens of angstroms is formed on the gallium arsenide layer. A metal layer, of not more about 100 angstroms thick, is deposited on the oxide layer, and a grid electrode is deposited to be in electrical contact with the top surface of the metal layer. An antireflection coating may be deposited on the exposed top surface of the metal layer.

Stirn, R. J.↗
NASA NTRS1981

Thermal and optical performance of encapsulation systems for flat-plate photovoltaic modules

The electrical power output from a photovoltaic module is strongly influenced by the thermal and optical characteristics of the module encapsulation system. Described are the methodology and computer model for performing fast and accurate thermal and optical evaluations of different encapsulation systems. The computer model is used to evaluate cell temperature, solar energy transmittance through the encapsulation system, and electric power output for operation in a terrestrial environment. Extensive results are presented for both superstrate-module and substrate-module design schemes which include different types of silicon cell materials, pottants, and antireflection coatings.

Minning, C. P.↗
NASA NTRS1982

The effect of Ta2O5 on the interaction between silicon and its contact metallization

Evidence is presented showing that the presence of the commonly used antireflection coating material, Ta2O5, on the free surface of contact metallization can either suppress or enhance, depending on the system, the interaction that takes place at elevated temperatures between the metallization and the underlying silicon. The Ta2O5 layer is shown to suppress both the generation and the annihilation of vacancies at the metal free surface which are necessary to support metal-silicon interactions. It is also shown that the mechanical condition of the free metal surface has a significant effect on the passivating ability of the Ta2O5 layer.

Weizer, V. G.↗