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Performance of CMOS pixel sensor prototypes in ams H35 and aH18 technology for the ATLAS ITk upgrade

Pixel sensors based on commercial high-voltage CMOS processes are an exciting technology that is considered as an option for the outer layer of the ATLAS inner tracker upgrade at the High Luminosity LHC. Here, charged particles are detected using deep n-wells as sensor diodes with the depleted region extending into the silicon bulk. Both analog and digital readout electronics can be added to achieve different levels of integration up to a fully monolithic sensor. Small scale prototypes using the ams CMOS technology have previously demonstrated that it can achieve the required radiation tolerance of 10(15) n(eq)/cm(2) and detection efficiencies above 99.5%. Recently, large area prototypes, comparable in size to a full sensor, have been produced that include most features required towards a final design: the H35demo prototype produced in ams H35 technology that supports both external and integrated readout and the monolithic ATLASPix1 pre-production design produced in ams aH18 technology. Both chips are based on large fill-factor pixel designs, but differ in readout structure. Performance results for H35DEMO with capacitively-coupled external readout and first results for the monolithic ATLASPix1 are shown.

ATLAS ITk upgrade↗

Active-Pixel Cosmic-Ray Sensor

Cosmic-ray sensor comprises planar rectangular array of lateral bipolar npn floating-base transistors each of which defines pixel. Collector contacts of all transistors in each row connected to same X (column) line conductor; emitter contacts of all transistors in each column connected to same Y (row) line conductor; and current in each row and column line sensed by amplifier, output of which fed to signal-processing circuits.

Fossum, Eric R.↗

Characteristics of Monolithically Integrated InGaAs Active Pixel Imager Array

Switching and amplifying characteristics of a newly developed monolithic InGaAs Active Pixel Imager Array are presented. The sensor array is fabricated from InGaAs material epitaxially deposited on an InP substrate. It consists of an InGaAs photodiode connected to InP depletion-mode junction field effect transistors (JFETs) for low leakage, low power, and fast control of circuit signal amplifying, buffering, selection, and reset. This monolithically integrated active pixel sensor configuration eliminates the need for hybridization with silicon multiplexer. In addition, the configuration allows the sensor to be front illuminated, making it sensitive to visible as well as near infrared signal radiation. Adapting the existing 1.55 micrometer fiber optical communication technology, this integration will be an ideal system of optoelectronic integration for dual band (Visible/IR) applications near room temperature, for use in atmospheric gas sensing in space, and for target identification on earth. In this paper, two different types of small 4 x 1 test arrays will be described. The effectiveness of switching and amplifying circuits will be discussed in terms of circuit effectiveness (leakage, operating frequency, and temperature) in preparation for the second phase demonstration of integrated, two-dimensional monolithic InGaAs active pixel sensor arrays for applications in transportable shipboard surveillance, night vision, and emission spectroscopy.

Kim, Q.↗

Assessment of Image Sensor Technology for Future NASA Missions

An assessment of solid-state UV/visible image sensor technology for future NASA missions is presented. The paper will attempt to summarize the state of the art in image sensor technology in the United States, Canada, Japan, and Europe. The state of the art and future trends will be compared to a forecast of future NASA needs in scientific image sensors for planetary exploration, earth science, astrophysics, and spacecraft systems such as star trackers and optical communications.

solid-state↗

An Algorithm of an X-ray Hit Allocation to a Single Pixel in a Cluster and Its Test-Circuit Implementation

An on-chip implementable algorithm for allocation of an X-ray photon imprint, called a hit, to a single pixel in the presence of charge sharing in a highly segmented pixel detector is described. Its proof-of-principle implementation is also given supported by the results of tests using a highly collimated X-ray photon beam from a synchrotron source. The algorithm handles asynchronous arrivals of X-ray photons. Activation of groups of pixels, comparisons of peak amplitudes of pulses within an active neighborhood and finally latching of the results of these comparisons constitute the three procedural steps of the algorithm. A grouping of pixels to one virtual pixel, that recovers composite signals and event driven strobes, to control comparisons of fractional signals between neighboring pixels are the actuators of the algorithm. The circuitry necessary to implement the algorithm requires an extensive inter-pixel connection grid of analog and digital signals, that are exchanged between pixels. A test-circuit implementation of the algorithm was achieved with a small array of 32 × 32 pixels and the device was exposed to an 8 keV highly collimated to a diameter of 3-μm X-ray beam. Furthermore, the results of these tests are given in this paper assessing physical implementation of the algorithm.

47 OTHER INSTRUMENTATION↗

ALICE-USA Barrel Tracking Upgrade (Project Final Report)

The ALICE-USA Barrel Tracking Upgrade (BTU) project began in 2015 to participate in a major upgrade of the Time Projection Chamber (TPC) and the Inner Tracking System (ITS) of the ALICE Experiment at CERN in Geneva, Switzerland. This upgrade increased the maximum readout rate of the ALICE detector to accommodate the increased heavy ion interaction rates following Long Shutdown 2 of the Large Hadron Collider, and greatly improved the vertexing performance of the detector. The original scope was completed and reviewed in November 2019. The BTU project document BTU.19.v1 "ALICE Barrel Tracking Upgrade Project Closeout / Transition to Operations (2019)" from November 2019 describes the status in detail and is attached as Appendix 1 below. At that point, all delivery milestones had been met on time, all Key Performance Parameters (KPPs) of the project had been satisfied, and the project was under budget. Several subsequent No Cost Extensions (NCEs) supported integration and pre-commissioning of the BTU project deliverables at CERN, as well as study and assessment of performance with Pb-Pb collisions at 50 kHz. The BTU project was successfully completed on 30 September 2024.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

APS Based Micro Star Tracker

Explore the source record for details and available documents.

Star Tracker Active Pixel Sensor Attitude Determin↗

Deep-Sea Video Cameras Without Pressure Housings

Underwater video cameras of a proposed type (and, optionally, their light sources) would not be housed in pressure vessels. Conventional underwater cameras and their light sources are housed in pods that keep the contents dry and maintain interior pressures of about 1 atmosphere (.0.1 MPa). Pods strong enough to withstand the pressures at great ocean depths are bulky, heavy, and expensive. Elimination of the pods would make it possible to build camera/light-source units that would be significantly smaller, lighter, and less expensive. The depth ratings of the proposed camera/light source units would be essentially unlimited because the strengths of their housings would no longer be an issue. A camera according to the proposal would contain an active-pixel image sensor and readout circuits, all in the form of a single silicon-based complementary metal oxide/semiconductor (CMOS) integrated- circuit chip. As long as none of the circuitry and none of the electrical leads were exposed to seawater, which is electrically conductive, silicon integrated- circuit chips could withstand the hydrostatic pressure of even the deepest ocean. The pressure would change the semiconductor band gap by only a slight amount . not enough to degrade imaging performance significantly. Electrical contact with seawater would be prevented by potting the integrated-circuit chip in a transparent plastic case. The electrical leads for supplying power to the chip and extracting the video signal would also be potted, though not necessarily in the same transparent plastic. The hydrostatic pressure would tend to compress the plastic case and the chip equally on all sides; there would be no need for great strength because there would be no need to hold back high pressure on one side against low pressure on the other side. A light source suitable for use with the camera could consist of light-emitting diodes (LEDs). Like integrated- circuit chips, LEDs can withstand very large hydrostatic pressures. If power-supply regulators or filter capacitors were needed, these could be attached in chip form directly onto the back of, and potted with, the imager chip. Because CMOS imagers dissipate little power, the potting would not result in overheating. To minimize the cost of the camera, a fixed lens could be fabricated as part of the plastic case. For improved optical performance at greater cost, an adjustable glass achromatic lens would be mounted in a reservoir that would be filled with transparent oil and subject to the full hydrostatic pressure, and the reservoir would be mounted on the case to position the lens in front of the image sensor. The lens would by adjusted for focus by use of a motor inside the reservoir (oil-filled motors already exist).

Cunningham, Thomas↗