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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Determination of background doping type in type-II superlattice using capacitance-voltage measurements with double mesa structure.
Abstract not provided.
Prebreakdown currents, high voltage conditioning and ultimate voltage for a large- gap concentric cylinder configuration in vacuum.
Prebreakdown currents, conditioning rates and ultimate voltage capability of vacuum gaps and solid insulation, analyzing data on large-gap concentric cylinder configuration
High-voltage lithium-metal batteries enabled by localized high-concentration electrolytes
Lithium metal batteries face safety and low Coulombic Efficiency barriers. Superconcentrated electrolyte is stable with lithium metal but exhibits high cost and poor wettability. We report a localized superconcentrated electrolyte by diluting a superconcentrated electrolyte with an ‘inert’ diluent which does not dissolve the salt but miscible with the solvent used in the superconcentrated electrolyte. This electrolyte exhibits low cost, good wettability, and enables dendrite-free lithium cycling with high Coulombic Efficiency (99.3%) and stability (> 95% capacity retention after 300 cycles) of lithium||LiNixMnyCozO2 batteries. The concept of localized superconcentrated electrolyte can also be applied to other multi-functional electrolytes for broad applications.
Fault Identification in Crystalline Silicon PV Modules by Complementary Analysis of the Light and Dark Current-Voltage Characteristics
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Random poly(3‐hexylthiophene‐ co ‐3‐cyanothiophene‐ co ‐3‐(2‐ethylhexyl)thiophene) copolymers with high open‐circuit voltage in polymer solar cells
ABSTRACT For the purpose of developing poly(3‐hexylthiophene) (P3HT) based copolymers with deep‐lying highest occupied molecular orbital (HOMO) levels for polymer solar cells with high open‐circuit voltage ( V oc ), we report a combined approach of random incorporation of 3‐cyanothiophene (CNT) and 3‐(2‐ethylhexyl)thiophene (EHT) units into the P3HT backbone. This strategy is designed to overcome CNT content limitations in recently reported P3HT‐CNT copolymers, where incorporation of more than 15% of CNT into the polymer backbone leads to impaired polymer solubility and raises the HOMO level. This new approach allows incorporation of a larger CNT content, reaching even lower‐lying HOMO levels. Importantly, a very low HOMO level of −5.78 eV was obtained, representing one of the lowest HOMO values for exclusively thiophene‐based polymers. Lower HOMO levels result in higher V oc and higher power conversion efficiencies (PCE) compared to the previously reported P3HT‐CNT copolymers containing only 3‐hexylthiophene and CNT units. As a result, solar cells based on P3HT‐CNT‐EHT(15:15) , which contains 70% of P3HT, 15% of CNT and 15% of EHT, yield a V oc of 0.83 V in blends with PC 61 BM while preserving high fill factor (FF) and high short‐circuit current density ( J sc ), resulting in 3.6% PCE. Additionally, we explored the effect of polymer number‐average molecular weight ( M n ) on the optoelectronic properties and solar cell performance for the example of P3HT‐CNT‐EHT(15:15). The organic photovoltaic (OPV) performance improves with polymer M n increasing from 3.4 to 6.7 to 9.6 kDa and then it declines as M n further increases to 9.9 and to 16.2 kDa. The molecular weight study highlights the importance of not only the solar cell optimization, but also the significance of individual polymer properties optimization, in order to fully explore the potential of any given polymer in OPVs. The broader ramification of this study lies in potential application of these high band gap copolymers with low‐lying HOMO level in the development of ternary blend photovoltaics as well as tandem OPV. © 2015 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2016 , 54 , 1526–1536
Enabling High-Voltage Lithium-Metal Batteries under Practical Conditions
Rechargeable lithium (Li) metal batteries (LMBs) offer a great opportunity for applications needing high-energy-density battery systems. However, rare progress has been demonstrated so far under practical conditions including high voltage, high loading cathode, thin Li anode, and lean electrolyte. Here, in opposite to the common wisdom, we report an ether-based localized high concentration electrolyte that can greatly enhance the stability of Ni-rich LiNi0.8Mn0.1Co0.1O2 (NMC811) cathode under 4.4 V and 4.5 V with an effective protection interphase enriched in LiF. This effect, in combination with the superior Li stability in this electrolyte, enables dramatically improved cycling performances of Li||NMC811 batteries under highly challenging conditions. The LMBs can retain over 80% capacity in 150 stable cycles with extremely limited amounts of Li anode and electrolyte. The findings in this work point out a very promising strategy to develop practical high-energy LMBs.
Ex situ bismuth doping for efficient CdSeTe thin-film solar cells with open-circuit voltages exceeding 900 mV
We dope CdTe solar cells with Bi after the device structure is completed using a solution process.
Insight into the Atomic Structure of High-Voltage Spinel LiNi 0.5 Mn 1.5 O 4 Cathode Material in the First Cycle
Application of high-voltage spinel LiNi 0.5 Mn 1.5 O 4 cathode material is the closest and the most realistic approach to meeting the midterm goal of lithium-ion batteries for electric vehicles (EVs) and plug-in hybrid electric vehicles (HEVs). However, this application has been hampered by long-standing issues, such as capacity degradation and poor first-cycle Coulombic efficiency of LiNi 0.5 Mn 1.5 O 4 cathode material. Although it is well-known that the structure of LiNi 0.5 Mn 1.5 O 4 into which Li ions are reversibly intercalated plays a critical role in the above issues, performance degradation related to structural changes, particularly in the first cycle, are not fully understood. Here, we report detailed investigations of local atomic-level and average structure of LiNi 0.5 Mn 1.5 O 4 during first cycle (3.5–4.9 V) at room temperature. We observed two types of local atomic-level migration of transition metals (TM) ions in the cathode of a well-prepared LiNi 0.5 Mn 1.5 O 4 //Li half-cell during first charge via an aberration-corrected scanning transmission electron microscopy (STEM). Surface regions (~2 nm) of the cycled LiNi 0.5 Mn 1.5 O 4 particles show migration of TM ions into tetrahedral Li sites to form a Mn 3 O 4 -like structure. However, subsurface regions of the cycled particles exhibit migration of TM ions into empty octahedral sites to form a rocksalt-like structure. The migration of these TM ions are closely related to dissolution of Ni/Mn ions and building-up of charge transfer impedance, which contribute significantly to the capacity degradation and the poor first-cycle Coulombic efficiency of spinel LiNi 0.5 Mn 1.5 O 4 cathode material. Accordingly, we provide suggestions of effective stabilization of LiNi 0.5 Mn 1.5 O 4 structure to obtain better electrochemical performance.
Mobility and threshold voltage extraction in transistors with gate-voltage-dependent contact resistance
The mobility of emerging (e.g., two-dimensional, oxide, organic) semiconductors is commonly estimated from transistor current-voltage measurements. However, such devices often experience contact gating, i.e., electric fields from the gate modulate the contact resistance during measurements, which can lead conventional extraction techniques to estimate mobility incorrectly even by a factor >2. Although this error can be minimized by measuring transistors at high gate-source bias |V gs |, this regime is often inaccessible in emerging devices that suffer from high contact resistance or early gate dielectric breakdown. Here, we propose a method of extracting mobility in transistors with gate-dependent contact resistance that does not require operation at high |V gs |, enabling accurate mobility extraction even in emerging transistors with strong contact gating. Our approach relies on updating the transfer length method (TLM) and can achieve <10% error even in regimes where conventional techniques overestimate mobility by >2×
Voltage-controlled ferromagnetism and magnetoresistance in LaCoO{sub 3}/SrTiO{sub 3} heterostructures
A LaCoO{sub 3}/SrTiO{sub 3} heterostructure grown on Si (001) is shown to provide electrically switchable ferromagnetism, a large, electrically tunable magnetoresistance, and a vehicle for achieving and probing electrical control over ferromagnetic behavior at submicron dimensions. Fabrication of devices in a field-effect transistor geometry enables application of a gate bias voltage that modulates strain in the heterostructure via the converse piezoelectric effect in SrTiO{sub 3}, leading to an artificial inverse magnetoelectric effect arising from the dependence of ferromagnetism in the LaCoO{sub 3} layer on strain. Below the Curie temperature of the LaCoO{sub 3} layer, this effect leads to modulation of resistance in LaCoO{sub 3} as large as 100%, and magnetoresistance as high as 80%, both of which arise from carrier scattering at ferromagnetic-nonmagnetic interfaces in LaCoO{sub 3}. Finite-element numerical modeling of electric field distributions is used to explain the dependence of carrier transport behavior on gate contact geometry, and a Valet-Fert transport model enables determination of spin polarization in the LaCoO{sub 3} layer. Piezoresponse force microscopy is used to confirm the existence of piezoelectric response in SrTiO{sub 3} grown on Si (001). It is also shown that this structure offers the possibility of achieving exclusive-NOR logic functionality within a single device.
A combined capacitance-voltage and hard x-ray photoelectron spectroscopy characterisation of metal/Al{sub 2}O{sub 3}/In{sub 0.53}Ga{sub 0.47}As capacitor structures
Capacitance-Voltage (C-V) characterization and hard x-ray photoelectron spectroscopy (HAXPES) measurements have been used to study metal/Al{sub 2}O{sub 3}/In{sub 0.53}Ga{sub 0.47}As capacitor structures with high (Ni) and low (Al) work function metals. The HAXPES measurements observe a band bending occurring prior to metal deposition, which is attributed to a combination of fixed oxide charges and interface states of donor-type. Following metal deposition, the Fermi level positions at the Al{sub 2}O{sub 3}/In{sub 0.53}Ga{sub 0.47}As interface move towards the expected direction as observed from HAXPES measurements. The In{sub 0.53}Ga{sub 0.47}As surface Fermi level positions determined from both the C-V analysis at zero gate bias and HAXPES measurements are in reasonable agreement. The results are consistent with the presence of electrically active interface states at the Al{sub 2}O{sub 3}/In{sub 0.53}Ga{sub 0.47}As interface and suggest an interface state density increasing towards the In{sub 0.53}Ga{sub 0.47}As valence band edge.
Robust Medium-Voltage Distribution System State Estimation using Multi-Source Data
Due to the lack of sufficient online measurements for distribution system observability, pseudo-measurements from short-term load or distributed renewable energy resources (DERs) forecasting are used. However, the accuracy of them is low and thus significantly limits the performance of distribution system state estimation (DSSE). In this paper, a robust DSSE that integrates multi-source measurement data is proposed. Specifically, the historical low-voltage (LV) side smart meters are used to forecast load and DERs injections via the support vector machine (SVM) with optimally tuned parameters. By contrast, the online smart meters at LV side are utilized to derive equivalent power injections at the MV/LV transformers, yielding more accurate pseudo-measurements compared to the forecasted injections. Furthermore, to deal with bad data caused by communication loss, instrumental errors and cyber attacks, robust DSSE that relies on generalized maximum-likelihood (GM)-estimation criterion is developed. The projection statistics are developed to adjust the weights of each measurement, leading to better balance between pseudo- and real-time measurements. Numerical results conducted on modified IEEE 33-bus system with DG integration demonstrate the effectiveness and robustness of the proposed method.
Oscillation Damping Control Using Multiple High Voltage DC Transmission Lines: Controllability Exploration.
Abstract not provided.