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At least 181 records · Page 10

Paper-Thin Plastic Film Soaks Up Sun to Create Solar Energy

A non-crystallized silicon known as amorphous silicon is the semiconductor material most frequently chosen for deposition, because it is a strong absorber of light. According to the U.S. Department of Energy, amorphous silicon absorbs solar radiation 40 times more efficiently than single-crystal silicon, and a thin film only about 1-micrometer (one one-millionth of a meter) thick containing amorphous silicon can absorb 90 percent of the usable light energy shining on it. Peak efficiency and significant reduction in the use of semiconductor and thin film materials translate directly into time and money savings for manufacturers. Thanks in part to NASA, thin film solar cells derived from amorphous silicon are gaining more and more attention in a market that has otherwise been dominated by mono- and poly-crystalline silicon cells for years. At Glenn Research Center, the Photovoltaic & Space Environments Branch conducts research focused on developing this type of thin film solar cell for space applications. Placing solar cells on thin film materials provides NASA with an attractively priced solution to fabricating other types of solar cells, given that thin film solar cells require significantly less semiconductor material to generate power. Using the super-lightweight solar materials also affords NASA the opportunity to cut down on payload weight during vehicle launches, as well as the weight of spacecraft being sent into orbit.

Source record↗

Magnetotail Current Sheet Thinning and Magnetic Reconnection Dynamics in Global Modeling of Substorms

Magnetotail current sheet thinning and magnetic reconnection are key elements of magnetospheric substorms. We utilized the global MHD model BATS-R-US with Adaptive Mesh Refinement developed at the University of Michigan to investigate the formation and dynamic evolution of the magnetotail thin current sheet. The BATSRUS adaptive grid structure allows resolving magnetotail regions with increased current density up to ion kinetic scales. We investigated dynamics of magnetotail current sheet thinning in response to southwards IMF turning. Gradual slow current sheet thinning during the early growth phase become exponentially fast during the last few minutes prior to nightside reconnection onset. The later stage of current sheet thinning is accompanied by earthward flows and rapid suppression of normal magnetic field component $B-z$. Current sheet thinning set the stage for near-earth magnetic reconnection. In collisionless magnetospheric plasma, the primary mechanism controlling the dissipation in the vicinity of the reconnection site is non-gyrotropic effects with spatial scales comparable with the particle Larmor radius. One of the major challenges in global MHD modeling of the magnetotail magnetic reconnection is to reproduce fast reconnection rates typically observed in smallscale kinetic simulations. Bursts of fast reconnection cause fast magnetic field reconfiguration typical for magnetospheric substorms. To incorporate nongyritropic effects in diffusion regions we developed an algorithm to search for magnetotail reconnection sites, specifically where the magnetic field components perpendicular to the local current direction approaches zero and form an X-type configuration. Spatial scales of the diffusion region and magnitude of the reconnection electric field are calculated self-consistently using MHD plasma and field parameters in the vicinity of the reconnection site. The location of the reconnection sites and spatial scales of the diffusion region are updated during the simulations. Such an approach allows quantifying the interaction between large-scale global magnetospheric dynamics and microphysical processes in diffusion regions localized near reconnection sites. To clarify the role of smallscale non-MHD effects in diffusion region on the global magnetospheric dynamic and to test different models of dissipation we perform simulations with steady southward IMF driving of the magnetosphere.

Kuznetsova, M. M.↗

Effect of Thin Cirrus Clouds on Dust Optical Depth Retrievals From MODIS Observations

The effect of thin cirrus clouds in retrieving the dust optical depth from MODIS observations is investigated by using a simplified aerosol retrieval algorithm based on the principles of the Deep Blue aerosol property retrieval method. Specifically, the errors of the retrieved dust optical depth due to thin cirrus contamination are quantified through the comparison of two retrievals by assuming dust-only atmospheres and the counterparts with overlapping mineral dust and thin cirrus clouds. To account for the effect of the polarization state of radiation field on radiance simulation, a vector radiative transfer model is used to generate the lookup tables. In the forward radiative transfer simulations involved in generating the lookup tables, the Rayleigh scattering by atmospheric gaseous molecules and the reflection of the surface assumed to be Lambertian are fully taken into account. Additionally, the spheroid model is utilized to account for the nonsphericity of dust particles In computing their optical properties. For simplicity, the single-scattering albedo, scattering phase matrix, and optical depth are specified a priori for thin cirrus clouds assumed to consist of droxtal ice crystals. The present results indicate that the errors in the retrieved dust optical depths due to the contamination of thin cirrus clouds depend on the scattering angle, underlying surface reflectance, and dust optical depth. Under heavy dusty conditions, the absolute errors are comparable to the predescribed optical depths of thin cirrus clouds.

Feng, Qian↗

Low-Cost Detection of Thin Film Stress during Fabrication

NASA's Marshall Space Flight Center has developed a simple, cost-effective optical method for thin film stress measurements during growth and/or subsequent annealing processes. Stress arising in thin film fabrication presents production challenges for electronic devices, sensors, and optical coatings; it can lead to substrate distortion and deformation, impacting the performance of thin film products. NASA's technique measures in-situ stress using a simple, noncontact fiber optic probe in the thin film vacuum deposition chamber. This enables real-time monitoring of stress during the fabrication process and allows for efficient control of deposition process parameters. By modifying process parameters in real time during fabrication, thin film stress can be optimized or controlled, improving thin film product performance.

Nabors, Sammy A.↗

Metallic Thin-Film Bonding and Alloy Generation

Diffusion bonding a stack of aluminum thin films is particularly challenging due to a stable aluminum oxide coating that rapidly forms on the aluminum thin films when they are exposed to atmosphere and the relatively low meting temperature of aluminum. By plating the individual aluminum thin films with a metal that does not rapidly form a stable oxide coating, the individual aluminum thin films may be readily diffusion bonded together using heat and pressure. The resulting diffusion bonded structure can be an alloy of choice through the use of a carefully selected base and plating metals. The aluminum thin films may also be etched with distinct patterns that form a microfluidic fluid flow path through the stack of aluminum thin films when diffusion bonded together.

Fryer, Jack Merrill↗

Optimization of Thin-Film Solar Cells for Lunar Surface Operations

Thin-film solar cells have been in production for decades, but technology has only recently advanced enough to allow for comparable efficiencies to traditional rigid cells. Some of the benefits of thin-films, such as lighter weight and being foldable, are particularly advantageous to space applications since mass and volume are key considerations of any flight project. Using these thin-film cells in space, however, is outside of their ground-based design criteria. This requires special care to be taken in designing the power generation system of a spacecraft around a thin-film solar cell, particularly in regards to thermal management. Without the diffusion of an atmosphere to mitigate solar load, the temperature of the panels can rapidly exceed their design specification. In this paper a design solution is presented that allows for thin-film solar cells to be used in a robotic lunar lander. Due to the low thermal mass and in-plane conductivity of thin films, it is difficult to remove waste heat by any other method than radiation. On the lunar surface this means angling the arrays to increase their view factor to space, which has the negative consequence of decreasing their power generation. An optimization was developed to balance the heat rejection and power generation of the cells, using constraints on the maximum cell temperature and minimum spacecraft power requirements. The resulting solar panel angle was then used as an input to the Thermal Desktop model to verify the final panel temperatures.

Breeding, Shawn↗

Raman Microscopy Analysis of Wyoming CarbonSAFE Pilot Well Thin Sections for Mineralogy and Organic Matter Characterization

Scanning confocal Raman microspectroscopy (RMS) was used to analyze thin sections for inorganic mineral content and for evaluation of organic material (OM). Thin sections were selected from a stratigraphic test well core in the Powder River Basin, Wyoming under the Wyoming CarbonSAFE project. The well was analyzed with a variety of rock and fluid characterization techniques to determine the feasibility of a commercial-scale CO2 storage site. RMS complements other analyses, including traditional petrography, SEM, porosity and permeability, and XRD For this aspect of the study, RMS is especially important in the evaluation of OM in sealing lithologies. At prospective geologic CO2 storage sites, it is imperative to assess the unconventional oil and gas potential of seals to ensure that any future development would not compromise the integrity of the seals. Whole-slide mineralogical surveys were performed on thin sections from various shale and sandstone formations. Surveys were analyzed with Direct Classical Least Squares to identify and quantify minerals. The location and concentration of minerals was color-coded and overlaid on optical images for visualization of the distribution of minerals. Dense hyperspectral Raman mapping of OM was performed on five thin sections. Eleven spectral parameters diagnostic of organic type and thermal maturity were used to train a Partial Least Squares (PLS) calibration against a set of artificially matured samples spanning the pre- to mid-oil window. The PLS was applied to the study set and a post-mature set. Additionally, the PLS was applied to each point in hyperspectral maps for visualization of trends in maturity across sample sets and discrimination of organic matter types within a given map. In inorganic surveys on thin sections, a total of 14 unique inorganic minerals were identified in Raman spectra including quartz, dolomite, calcite, hematite and anhydrite. Shale thin sections tended to be dominated by organic material. OM was often observed mixed with inorganic minerals. Sand- and mudstones were dominated by inorganic minerals. The PLS extrapolated the post-mature set to reflectances >1.2%. The study set ranged from very immature to postmature in the median of map fit-peak parameters. However, point maturity maps indicate that matrix OM in all study samples is immature and that discreet organic particles selected for mapping, which may be inertinites, bias medians towards more-mature. The work demonstrates the capabilities of RMS to perform both whole-slide mineralogy and OM analysis with applications to formation evaluation in oil & gas, carbon sequestration and mining. Here, analysis of sealing formations in the well indicates high levels of immature organic matter that would not be a viable target for future oil production that could compromise the CO2 storage site. The work brings together diverse disciplines from geology and petrography to analytical chemistry, big data and microscopy.

Myers, Grant↗

Methods for fabricating thin film III-V compound solar cell

The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.

Pan, Noren↗

Tooling assembly and method for explosively forming features in a thin-walled cylinder

The present invention provides a method of explosively forming a helical tube from at least one thin-walled cylinder using a tooling assembly. The method includes inserting the at least one thin-walled cylinder into a die of the tooling assembly. The die surrounds the at least one thin-walled cylinder and includes an interior surface that defines a helical thread pattern. The method further includes surrounding the at least one thin-walled cylinder and the die with a casing of the tooling assembly. A cavity is defined by the casing and the thin-walled cylinder. The method further includes positioning an explosive charge within the cavity. The method additionally includes at least partially submerging the tooling assembly. The method further includes detonating the explosive charge. As a result, the at least one thin-walled cylinder is formed into a helical tube that corresponds with helical thread pattern of the interior surface of the die.

Eberl, Kurt R.↗

Phase evolution and amorphous stability upon solid-state reaction in superlattice like Ge–Sb–Te combinatorial thin-film

In this paper, the superlattice-like (SLL) Ge–Sb–Te combinatorial thin films were prepared by using a high-throughput ion beam sputtering system. The phase evolution and amorphous stability of such films undergoing heat treatment as a function of the coating sequence and modulation period were systematically studied. The composition structure diagram was constructed via an automated process of data obtained by high-throughput synchrotron micro-X-ray diffraction and lab-based micro-X-ray fluorescence. Furthermore, the element distribution and microstructure in the depth direction of the SLL thin films were characterized with time-of-flight secondary ion mass spectrometry and transmission electron microscopy, respectively. These studies demonstrated that the coating sequence has a significant effect on the element distribution in the as-deposited SLL thin films and the structure of the final product upon solid-state reaction. Reducing the modulation period of the SLL thin film improves the stability of the amorphous Ge–Sb–Te phase. This work lays a solid foundation for the rational design of SLL Ge–Sb–Te thin films to improve their performance.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Experimental and theoretical study of hole scattering in RF sputtered p-type Cu 2 O thin films

One of the key materials of interest for p-type oxide semiconductor thin film electronics is cuprous oxide (Cu 2 O), due to its relatively high hole mobility. Here, in this work, we use experiments, analytical models, and density functional theory calculations to study the scattering mechanisms that determine Hall mobility in two Cu 2 O samples. First, we examine a polycrystalline Cu 2 O thin film deposited by RF magnetron sputtering, and second, a single-crystalline Cu2O bulk substrate. Temperature-dependent Hall measurements indicate that neutral impurity and grain boundary scattering are dominant for the polycrystalline Cu 2 O thin film, while phonon scattering is dominant for single-crystalline Cu 2 O. Our first-principles calculations show that the room-temperature intrinsic hole mobility of Cu 2 O is 106 cm 2 V –1 s –1 , indicating the great promise of the material for p-type electronic devices. This intrinsic mobility is limited by phonon scattering, with the most dominant scattering modes having phonon energies of 88.4 and 17.1 meV. These results indicate that the key pathways to increase the hole mobility in Cu 2 O thin films are by reducing the impurity concentration and by increasing grain size. Our work thus sets the stage for the future development of high performance Cu 2 O-based p-type thin film transistors.

36 MATERIALS SCIENCE↗

Transfer of Millimeter‐Scale Strained Multiferroic Epitaxial Thin Films on Rigid Substrates via an Epoxy Method Producing Magnetic Property Enhancement

The demonstration of epitaxial thin film transfer has enormous potential for thin film devices free from the traditional substrate epitaxy limitations. However, large-area continuous film transfer remains a challenge for the commonly reported polymer-based transfer methods due to bending and cracking during transfer, especially for highly strained epitaxial thin films. In this work, a new epoxy-based, rigid transfer method is used to transfer films from an SrTiO 3 (STO) growth substrate onto various new substrates, including those that will typically pose significant problems for epitaxy. An epitaxial multiferroic Bi 3 Fe 2 Mn 2 O x (BFMO) layered supercell (LSC) material is selected as the thin film for this demonstration. The results of surface and structure studies show an order of magnitude increase in the continuous area of transferred films when compared to previous transfer methods. The magnetic properties of the BFMO LSC films are shown to be enhanced by the release of strain in this method, and ferromagnetic resonance is found with an exceptionally low Gilbert damping coefficient. The large-area transfer of this highly strained complex oxide BFMO thin film presents enormous potential for the integration of many other multifunctional oxides onto new substrates for future magnetic sensors and memory devices.

bismuth oxides↗

Epitaxial Thin Film Growth on Recycled SrTiO 3 Substrates Toward Sustainable Processing of Complex Oxides

Complex oxide thin films cover a range of physical properties and multifunctionalities that are critical for logic, memory, and optical devices. Typically, the high‐quality epitaxial growth of these complex oxide thin films requires single crystalline oxide substrates such as SrTiO 3 (STO), MgO, LaAlO 3 , a‐Al 2 O 3, and many others. Recent successes in transferring these complex oxides as free‐standing films not only offer great opportunities in integrating complex oxides on other devices, but also present enormous opportunities in recycling the deposited substrates after transfer for cost‐effective and sustainable processing of complex oxide thin films. In this work, the surface modification effects introduced on the recycled STO are investigated, and their impacts on the microstructure and properties of subsequently grown epitaxial oxide thin films are assessed and compared with those grown on the pristine substrates. Detailed analyses using high‐resolution scanning transmission electron microscopy and geometric phase analysis demonstrate distinct strain states on the surfaces of the recycled STO versus the pristine substrates, suggesting a pre‐strain state in the recycled STO substrates due to the previous deposition layer. These findings offer opportunities in growing highly mismatched oxide films on the recycled STO substrates with enhanced physical properties. Specifically, yttrium iron garnet (Y 3 Fe 5 O 12 ) films grown on recycled STO present different ferromagnetic responses compared to that on the pristine substrates, underscoring the effects of surface modification. The study demonstrates the feasibility of reuse and redeposition using recycled substrates. Via careful handling and preparation, high‐quality epitaxial thin films can be grown on recycled substrates with comparable or even better structural and physical properties toward sustainable process of complex oxide devices.

pre-strained STO surfaces↗

Fe Thin Film-Coated Optics for Corrosion Monitoring: Optical and Electrochemical Studies

Corrosion proxy materials integrated with an optical sensing platform enable a real-time optical corrosion sensor for natural gas pipelines to prevent methane leaks and catastrophic events. Effects of CO 2 , pH, and film thickness on corrosion of Fe thin films (25, 50, 100 nm) were studied using optical and electrochemical methods in 3.5%wt. NaCl solutions at 30 °C. An increase in light transmission (T%) corresponded to corrosion of Fe thin films. CO 2 accelerated corrosion of Fe thin films due to the lower pH and the promoted corrosion reactions, resulting in a faster increase of T% than without CO 2 or at higher pH. While the corrosion rate increased with increasing film thickness, electrochemical corrosion of Fe thin films was in good agreement with that of bulk carbon steel, verifying that Fe thin films can serve as a representative corrosion proxy when integrated with the optical sensing platform.

36 MATERIALS SCIENCE↗

Phase-field simulation of domain size effect on dielectric and piezoelectric responses in K 0.5 Na 0.5 NbO 3 epitaxial thin films with superdomain structures

Size effects of mesoscale ferroelectric domains on the macroscopic dielectric and piezoelectric responses in domain-engineered bulk piezocrystals have been extensively studied for more than two decades. However, less is known about the domain size effects in ferroelectric epitaxial thin films, especially for films consisting of low-symmetry ferroelectric phases and exhibits hierarchical superdomain structures. Herein, using phase-field simulations, we systemically evaluate the effective out-of-plane dielectric and piezoelectric coefficients, κ$^{*}_{33}$ and d$^{*}_{33}$, as a function of the domain periods for two types of superdomain structures in ferroelectric K 0.5 Na 0.5 NbO 3 epitaxial thin films. In one type of the superdomain structures, we find that more than 70% increase of κ$^{*}_{33}$ and nearly 20% increase of d$^{*}_{33}$ can be achieved by tuning the domain period by a few tens of nanometers. Dissimilar behaviors are found when the domain period varies along different lateral directions, suggesting anisotropic domain size effects in thin films. By analyzing the local dielectric and piezoelectric responses from each domain variants and domain walls, we reveal that the domain size effect is governed by the variation of out-of-plane polarization inside the domains. Moreover, we also demonstrate enhanced domain size effects by modulating the misfit strains and temperature to approach the polymorphic phase boundaries, suggesting tunability of the size effect by doping and strain engineering. Furthermore, our results reveal multimodal domain size dependence of dielectric and piezoelectric responses in low-symmetry ferroelectric epitaxial thin films, implying that domain size engineering can be used to tune macroscopic properties of thin-film ferroelectrics, similar to their bulk counterparts.

36 MATERIALS SCIENCE↗

The influence of cooling rates on strain phase diagrams and domain structures of ferroelectric thin films: A case study of PbTiO 3

Strain engineering has been established as an effective approach to control phase equilibria, domain configurations, and functional properties of ferroelectric thin films. Temperature-strain phase diagrams have been used as powerful tools for providing insights into strain engineering. However, almost all existing phase diagrams established using the phase-field approach assume quenching conditions without considering actual cooling rates during the post-deposition annealing process of ferroelectric thin films. Within this work, we systematically investigate the influence of cooling rates on domain structures and the strain-phase diagram of ferroelectric thin films using phase-field simulations, taking PbTiO 3 thin films as a model system. We found that both the position of phase boundaries in the strain phase diagrams and the domain morphology are significantly influenced by the cooling rates. It is revealed that while the paraelectric-ferroelectric phase boundary remains invariant, the phase boundaries between single-phase and multi-phase regions tend to shift toward the corresponding multi-phase region as the cool rate reduces. Slow cooling generally leads to more ordered domain structures with increased domain size. Using the obtained equilibrium domain structures, we calculated effective thermal conductivities and found significant variations that can be tuned by the cooling rates. In conclusion, this work reveals an underexplored yet critical impact of cooling rates on phase equilibria and domain structures in ferroelectric thin films, which may inspire further fine-tuning of domains and domain walls in low-dimensional ferroelectrics for multifunctional applications.

Domain structures↗

Recent progress on the mesoscale modeling of architected thin-films via phase-field formulations of physical vapor deposition

Thin-film coatings can be found everywhere in modern technological applications due to desirable electrical, mechanical, chemical, and optical properties. These properties directly depend upon the thin-film’s microstructural features, which are themselves influenced by the materials and vapor-deposition processing conditions used for fabrication. As such, understanding processing-microstructure relationships is essential to designing thin-films with optimized properties, and discovering new processing conditions that allow for novel thin-films with multifunctional microstructures. Here, a short review is presented on recent developments that utilize the phase-field method to simultaneously model the vapor-deposition process and corresponding microstructure formation at the mesoscale. Also phase-field-based vapor-deposition models that simulate thin-film growth of immiscible alloy and polycrystalline systems are highlighted in addition to machine-learning-based surrogate models that can facilitate accelerated high-fidelity simulations along with materials design and exploration studies.

36 MATERIALS SCIENCE↗

Electron doping of NdNiO 3 thin films using dual chamber CaH 2 annealing

Hydrogen donor doping has been exploited as a strategy to manipulate the electronic structure and electrical properties of functional oxide systems. Especially, the development of synthetic methods to achieve electron doping of perovskite rare-earth nickelate thin films utilizing interstitial hydrogen is highly desirable considering the rich electronic phase diagram hosting several functional properties. Here, in this work, we present the hydrogenation of NdNiO 3 (NNO) thin films using CaH 2 annealing and the resulting giant modulation of electrical resistivity in hydrogenated NNO (H–NNO) thin films. Magnetron sputtering was employed to deposit epitaxial ~60 nm-thin NNO films on single crystal LaAlO 3 (LAO) substrates. The formation of the pristine perovskite NNO phase was realized after annealing the films at 500 °C for 24 h. CaH 2 annealing of NNO thin films for time durations ranging from 1 to 6 h was performed in a vacuumed ampule with two interconnected chambers at 280 °C. The two-chamber design enables a simple and clean approach for hydrogen doping without physical contact between the powder and sample of interest. X-ray diffraction and Raman spectroscopy revealed the formation of NNO in pristine samples, and the subsequent hydrogen incorporation upon CaH 2 annealing without forming any impurity phases. The conversion of the oxidation state of Ni towards +2 upon CaH 2 annealing was probed using X-ray photoelectron spectroscopy and X-ray absorption spectroscopy. Consequently, a substantial increase in the room-temperature resistivity was observed upon CaH 2 annealing indicating the formation of a strongly correlated electronic configuration of Ni in H–NNO due to electron doping. Overall, the findings of this study highlight the versatility of CaH 2 annealing as an electron doping method to tune the electrical properties of correlated oxides at low temperatures.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗