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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
NASA NTRS1978

Manicouagan impact melt, Quebec. II - Chemical interrelations with basement and formational processes

The basement rocks of Manicouagan exhibit a wide compositional range (40-72% SiO2). Least squares mixing calculations indicate that the average composition of the Manicouagan melt sheet can be modeled for 9 major and 11 trace elements by a mixture of 4.5% anorthosite, 55.5% mafic gneiss, and 40.0% tan gneiss with a granitic-granodioritic composition. The underrepresentation of anorthosite relative to its present distribution is considered. The homogeneous composition of the melt (57.75 + or - 1.21% SiO2) relative to that of the postulated target is explained in a model outlining the dynamic conditions existing during the formation of the melt and its accompanying movement into the excavated cavity.

Grieve, R. A. F.↗
NASA NTRS1977

Pressureless sintered beta-prime-Si3N4 solid solution - Fabrication, microstructure, and strength

Pressureless sintering of beta-prime-Si3N4 solid solution was studied as a function of temperature using Si3N4, A1N, and Al2O3 as basic constituents. Y2O3-SiO2 additions were used to promote liquid-phase sintering. The sintered specimens were characterized with respect to density, microstructure, strength, oxidation, and thermal shock resistance. Density greater than 98 percent of theoretical was achieved by pressureless sintering at 1750 C. The microstructure consisted essentially of fine-grained beta-prime-Si3N4 solid solution as the major phase. Modulus of rupture strengths up to 483 M Pa were achieved at moderate temperature (1000 C), but decreased to 228 M Pa at 1380 C. This substantial strength loss was attributed to a 'glassy' grain boundary phase formed during cooling from the sintering temperature. The best oxidation resistance was exhibited by a composition containing 3 mol % Y2O3-SiO2 additives. Water quench thermal shock resistance was equivalent to that of reaction sintered silicon nitride but lower than hot-pressed silicon nitride.

Dutta, S.↗
NASA NTRS1978

Spectral studies of SiCl4 + N2O + Ar and SiH4 + Ar mixtures in a shock tube in 160-550 nm range

Gases containing SiO, SiO2, SiH, and Si2 were produced in the reflected-shock region of a shock tube by heating SiCl4 + N2O + Ar and SiH4 + Ar mixtures with shock waves. Spectral absorption characteristics were measured in the 160-550 nm wavelength range and in the 2800-3600 K temperature range and compared to calculated values. The sums of the squares of electronic transition moments at equilibrium separation were derived. It was found that absorption by SiO2 and other known bands of SiO, SiH, and Si2 were too weak to be measured. The cross section of absorption by a continuum, believed due to SiH, varied from 2.5 x 10 to the -17th sq cm at 280 nm to 1.6 x 10 to the -18th sq cm at 440 nm.

Park, C.↗
NASA NTRS1978

Induced junction solar cell and method of fabrication

An induced junction solar cell is fabricated on a p-type silicon substrate by first diffusing a grid of criss-crossed current collecting n+ stripes and thermally growing a thin SiO2 film, and then, using silicon-rich chemical vapor deposition (CVD), producing a layer of SiO2 having inherent defects, such as silicon interstices, which function as deep traps for spontaneous positive charges. Ion implantation increases the stable positive charge distribution for a greater inversion layer in the p-type silicon near the surface. After etching through the oxide to parallel collecting stripes, a pattern of metal is produced consisting of a set of contact stripes over the exposed collecting stripes and a diamond shaped pattern which functions as a current collection bus. Then the reverse side is metallized.

Maserjian, J.↗
NASA NTRS1980

NBS: Materials measurements

Measurements in an Auger spectrometer of surface impurity concentrations on liquid gallium showed that the principle impurities were oxygen and carbon. The impurities showed a tendency to collect into plates or clumps. In Pb rich Pb-Sn off eutectic alloys, macrosegration caused by solutal convection was not reduced by vertical or horizontal fields of 0.1 T, but downward solidification virtually eliminated macrosegration in small diameter samples. Phase assemblages of selected compositions on the joints K(Fe0.5 Si-0.5) O2 -SiO2 and KFeO2 - SiO2 were determined over a large range of oxygen partial pressures and the temperature range 800 C to 1400 C.

Source record↗
NASA NTRS1980

Properties of various silicon oxide phases in thin films

Layers of SiO2 with reproducible properties can be manufactured relatively easily today. In the case of SiO and Si2O3 layers, it is necessary to carefully check all of the manufacturing parameters for producing layers with reproducible properties. The properties of the layers in the case of SiO2 do conform to expectations. In the case of Si2O3 and SiO, they can be understood at least qualitatively. Additional interesting models are available for a quantitative understanding.

Ritter, E.↗
NASA NTRS1980

Hot isostatic pressing of silicon nitride Sisub3n4 containing zircon, or zirconia and silica

A hydrothermal synthesis apparatus with a 10 KB cylinder was used to obtain a sintered body of silicon nitride. The sintering auxiliary agents used were zircon (ZrSiO4) and a mixture of zirconia (ZrO2) and silica (SiO2). Experiments were conducted with the amounts of ZrSi04 or ArO2 and SiO2 varying over a wide range and the results compared to discover the quantity of additive which produced sintering in silicon nitride by the hot pressing method.

Somiya, S.↗
NASA NTRS1980

XPS studies of structure-induced radiation effects at the Si/SiO2 interface

The interfacial structures of radiation hard and soft oxides grown by dry and wet processes on silicon substrates have been examined by high-resolution X-ray photoelectron spectroscopy. It is found that the primary difference in the local atomic structure at the Si/SiO2 interface is the significantly higher concentration of strained 120 deg SiO2 bonds and SiO interfacial species in soft samples. Results of in situ radiation damage experiments using low energy electrons (0-20 eV) are reported which correlate with the presence of a strained layer of SiO2 (20 A) at the interface. The results are interpreted in terms of a structural model for hole and electron trap generation by ionizing radiation.

Grunthaner, F. J.↗
NASA NTRS1981

Nitridation of silicon

Silicon powders with three levels of impurities, principally Fe, were sintered in He or H2. Non-densifying mechanisms of material transport were dominant in all cases. High purity Si showed coarsening in He while particle growth was suppressed in H2. Lower purity powder coarsened in both He and H2. The same three Si powders and Si /111/ single crystal wafers were nitrided in both N2 and N2/H2 atmospheres. Hydrogen increased the degree of nitridation of all three powders and the alpha/beta ratio of the lower purity powder. Some Si3N4 whiskers and open channels through the surface nitride layer were observed in the presence of Fe, correlating with the nitridation-enhancing effects of Fe. Thermodynamic calculations showed that when SiO2 is present on the Si, addition of H2 to the nitriding atmosphere decreases the amount of SiO2 and increases the partial pressure of Si-containing vapor species, that is, Si and SiO. Large amounts of NH3 and SiH4 were also predicted to form.

Shaw, N. J.↗
NASA NTRS1980

Flow behavior of droplet chondrules in the Manych /L-3/ chondrite

The Manych (L-3) chondrite contains chondrules that have radically different thermal histories. The high-SiO2 composition cooled at about 1 K/min to a glassy state or more slowly to form a variety of fractions of crystals. The low-SiO2 composition cooled at about 3000 K/min to form a glassy coating or much more slowly to form microporphyry. The extreme range of cooling rates displayed by objects in the Manych chondrite is difficult to reconcile with a model involving droplet condensation at low pressure which provides a uniform temperature, a uniform cooling rate, and an ambient that is not necessarily cold. The experimental results presented here are interpreted to mean that the origin of the chondrules is likely a result of impact melting because of the range of cooling histories represented in the chondrite.

Klein, L. C.↗
NASA NTRS1982

Flow behavior of ten iron-containing silicate compositions

The viscosity of ten iron-containing silicates has been measured over the temperature range 400 to 650 C. The compositions contain trace amounts up to 30 wt. pct. or 20 mole. pct. Fe3O4 from 10 to 20 wt. pct. or 10 to 20 mole. pct. Na2O and the remainder is SiO2. Samples were melted in air to form oxidized samples, in forming gas (95% N2-5% H2) to form mildly reduced samples, and in forming gas with carbon in the batch to form strongly reduced samples. In general, the viscosity decreased with increasing mole. pct. Na2O and decreasing mole. pct. SiO2 for a given temperature. In samples with increasing mole. pct. FeO(x) the difference in the viscosity between the oxidized sample and the reduced sample grew in magnitude at a given temperature. In all of the compositions, the log or viscosity, vs reciprocal-of-temperature relation shows curvature with an apparent activation energy between 90 and 100 kcal/mole.

Klein, L. C.↗
NASA NTRS1982

Thermodynamics of silicon nitridation - Effect of hydrogen

Equilibrium compositions for the nitridization of Si were calculated to detect the effectiveness of H2 in removal of the oxide film and in increasing the concentration of SiO and reducing the proportions of O2. Gibbs free energy for the formation of SiN2O was computed above 1685 K, and at lower temperatures. The thermodynamic properties of SiN2O2 were then considered from 1000-3000 K, taking into account the known thermodynamic data for 39 molecular combinations of the Si, Ni, and O. The gases formed were assumed ideal mixtures with pure phase condensed species. The mole fractions were obtained for a system of SiO2 with each Si particle covered with a thin layer of SiO2 before nitridation, and a system in which the nitriding atmosphere had access to the Si. The presence of H2 was determined to enhance the removal of NiO2 in the first system, decrease the partial pressure of O2, increase the partial pressures of SiO, Si, H2O, NH3, and SiH4, while its effects were negligible in the Si system.

Shaw, N. J.↗
NASA NTRS1983

Compositional depth profile of a native oxide LPCVD MNOS structure using X-ray photoelectron spectroscopy and chemical etching

It is pointed out that there is no report of an unambiguous analysis of the composition and interfacial structure of MNOS (metal-nitride oxide semiconductor) systems, despite the technological importance of these systems. The present investigation is concerned with a study of an MNOS structure on the basis of a technique involving the use of X-ray photoelectron spectroscopy (XPS) with a controlled stopped-flow chemical-etching procedure. XPS is sensitive to the structure of surface layers, while stopped-flow etching permits the controlled removal of overlying material on a scale of atomic layers, to expose new surface layers as a function of thickness. Therefore, with careful analysis of observed intensities at measured depths, this combination of techniques provides depth resolution between 5 and 10 A. According to the obtained data there is intact SiO2 at the substrate interface. There appears to be a thin layer containing excess bonds to silicon on top of the SiO2.

Wurzbach, J. A.↗
NASA NTRS1983

Improved performance thermal barrier coatings

Thermal barrier coatings offer an attractive approach to improving the durability and efficiency of the hot section of heat engines. The coatings typically consist of an inner alloy bond coating about 0.01 cm thick resistant to oxidation and hot corrosion and an outer ceramic layer, usually a stabilized zirconia, 0.01-0.05 cm thick. Here, the materials, thermomechanical stress, and hot corrosion problems associated with thermal barrier coatings are reviewed along with the capabilities and limitations of current technology. The coatings discussed include ZrO2-Y2O3/NiCrAlY, ZrO2-Y2O3/NiCoCrAlY, ZrO2-MgO/NiCoCrAlY, CaO-SiO2/Co-Cr-Al-Y, and CaO-SiO2/NiCrAlY systems. It is emphasized that the performance of thermal barrier coatings is governed by many complex and interrelated factors, so that optimization of these coatings always involves certain tradeoffs.

Levine, S. R.↗
NASA NTRS1984

Material growth and characterization for solid state devices

During the reporting period, InGaAs was grown on Fe-doped (semi-insulating) (100) InP substrates by current controlled liquid phase epitaxy (CCLPE) at 640 C and current densities of 2.5A sq/cm to 5 A/sq cm for periods from 5 to 30 minutes. Special efforts were made to reduce the background carrier concentration in the grown layers as much as possible. The best layers exhibited carrier concentrations in the mid-10 to the 15th power/cu cm range and up to 10,900 sq cm/V-sec room temperature mobility. InGaAsP quaternary layers of energy gap corresponding to wavelengths of approximately 1.5 microns and 1.3 microns were grown on (100) InP substrates by CCLPE. In the device fabrication area, work was directed toward processing MISFET's using InGaAs. SiO2, Si3N4 and Al2O3 were deposited by ion beam sputtering, electron beam evaporation and chemical vapor reaction on Si, GaAs, and InGaAs substrates. SiO2 and Si3N4 sputtered layers were found to possess a high density of pinhole defects that precluded capacitance-voltage analysis. Chemical vapor deposited Al2O3 layers on Si, GaAs and InGaAs substrates also exhibited a large number of pinhole defects. This prevented achieving good MIS devices over most of the substrate surface area.

Stefanakos, E. K.↗
NASA NTRS1984

Homogeneity of gels and gel-derived glasses

The significance and implications of gel preparation procedures in controlling the homogeneity of multicomponent oxide gels are discussed. The role of physicochemical factors such as the structure and chemical reactivities of alkoxides, the formation of double-metal alkoxides, and the nature of solvent(s) are critically analyzed in the context of homogeneity of gels during gelation. Three procedures for preparing gels in the SiO2-B2O3-Na2O system are examined in the context of cation distribution. Light scattering results for glasses in the SiO2-B2O3-Na2O system prepared by both the gel technique and the conventional technique are examined.

Mukherjee, S. P.↗
NASA NTRS1984

The rheology of icy satellites

High-temperature creep in orthoenstatite under conditions of controlled oxygen fugacity was studied. It was found that creep was conttrolled by the extremely thin layer of SiO2 which wetted the grain boundaries. Slight reduction of the (Mg, Fe)SiO3 enstatite during hot pressing produced microscopic particles of Fe and the thin film of intergranular SiO2. This result highlights another complication in determining the flow properties of iron bearing silicates which constitute the bulk of terrestrial planets and moons. The Phenomenon may be important in the ductile formation of any extraterrestrial body which is formed in a reducing environment. The rheology of dirty ice was studied. This involves micromechanical modeling of hardening phenomena due to contamination by a cosmic distribution of silicate particles. The larger particles are modeled by suspension theory. In order to handle the distribution of particles sizes, the hardening is readed as a critical phenomenon, and real space renormalization group techniques are used. Smaller particles interact directly with the dislocations. The particulate hardening effect was studied in metals. The magnitude of such hardening in ice and the defect chemistry of ice are studied to assess the effects of chemical contamination by methane, ammonia, or other likely contaminants.

Sammis, C. G.↗
NASA NTRS1985

Oxidation and hot corrosion of hot-pressed Si3N4 at 1000 deg C

The oxidation and hot corrosion of a commercial, hot-pressed Si3N4 were investigated at 1000 C under an atmosphere of flowing O2. For the hot corrosion studies, thin films of Na2SO4 were airbrushed on the Si3N4 surface. The hot corrosion attack was monitored by the following techniques: continuous weight measurements, SO2 evolution, film morphology, and chemical analyses. Even though the hot corrosion weight changes after 25 hr were relatively small, the formation of SiO2 from oxidation of Si3N4 was an order of magnitude greater in the presence of molten Na2SO4. The formation of a protective SiO2 phase at the Si3N4 surface is minimized by the fluxing action of the molten Na2SO4 thereby allowing the oxidation of the Si3N4 to proceed more rapidly. A simple process is proposed to account for the hot corrosion process.

Fielder, W. L.↗