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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
NASA NTRS2010

Advanced Avionics and Processor Systems for a Flexible Space Exploration Architecture

The Advanced Avionics and Processor Systems (AAPS) project, formerly known as the Radiation Hardened Electronics for Space Environments (RHESE) project, endeavors to develop advanced avionic and processor technologies anticipated to be used by NASA s currently evolving space exploration architectures. The AAPS project is a part of the Exploration Technology Development Program, which funds an entire suite of technologies that are aimed at enabling NASA s ability to explore beyond low earth orbit. NASA s Marshall Space Flight Center (MSFC) manages the AAPS project. AAPS uses a broad-scoped approach to developing avionic and processor systems. Investment areas include advanced electronic designs and technologies capable of providing environmental hardness, reconfigurable computing techniques, software tools for radiation effects assessment, and radiation environment modeling tools. Near-term emphasis within the multiple AAPS tasks focuses on developing prototype components using semiconductor processes and materials (such as Silicon-Germanium (SiGe)) to enhance a device s tolerance to radiation events and low temperature environments. As the SiGe technology will culminate in a delivered prototype this fiscal year, the project emphasis shifts its focus to developing low-power, high efficiency total processor hardening techniques. In addition to processor development, the project endeavors to demonstrate techniques applicable to reconfigurable computing and partially reconfigurable Field Programmable Gate Arrays (FPGAs). This capability enables avionic architectures the ability to develop FPGA-based, radiation tolerant processor boards that can serve in multiple physical locations throughout the spacecraft and perform multiple functions during the course of the mission. The individual tasks that comprise AAPS are diverse, yet united in the common endeavor to develop electronics capable of operating within the harsh environment of space. Specifically, the AAPS tasks for the Federal fiscal year of 2010 are: Silicon-Germanium (SiGe) Integrated Electronics for Extreme Environments, Modeling of Radiation Effects on Electronics, Radiation Hardened High Performance Processors (HPP), and and Reconfigurable Computing.

Keys, Andrew S.↗
NASA NTRS2022

A Novel High-Performance Mission-Enabling Multi-Purpose Radioisotope Heat Source

Recent studies indicate science mission concepts targeting access to the sub-surface oceans of icy moons require ice-penetrating cryobots powered by advanced Radioisotope Power Systems (RPS). These systems would deliver waste heat for ice-melting in the range of 10 kW. Minimizing the transit time through the kilometers-thick ice shells to just a few years requires these RPS to utilize heat sources having a higher thermal energy volumetric density than the existing flight-qualified General-Purpose Heat Source (GPHS). A Compact Heat Source (CPHS)has been conceptualized in which the graphite impact shells(GIS) of the existing GPHS are rearranged in a hexagonal aeroshell containing seven GIS per module, as opposed to the standard two per module; offering a thermal energy density of 0.57 W/cm3versus 0.29 W/cm3 offered by the GPHS simply from the repackaging of Technology Readiness Level (TRL)9 subassemblies. Preliminary thermal modeling of the CPHS integrated into a notional radioisotope thermoelectric generator(RTG) structure further suggests that centerline temperatures are well within allowable limits during nominal operation. Given the need for the CPHS for a subset of missions, it is worth exploring the applicability of the CPHS for more general RTG purposes. We discuss herein how the CPHS may be implemented with either heritage or in-development thermoelectric converter technologies into a Next-Generation RTG concept. Due to a higher energy density, the legacy heat rejection fin arrangement must be modified to permit a sufficiently low cold-side temperature. Preliminary finite element analysis suggests fin-root temperatures can be kept as low as 520 K while allowing the generator to fit within the usable dimensions of currently available United States Department of Energy shipping containers. Such temperatures would certainly be compatible with the use of high temperature thermoelectric converter technologies.. A prime candidate is the heritage silicon-germanium (SiGe) unicouple, whose design could be adapted by approximately halving the leg-length, but without changes in hot and cold junction interfaces, which are features critical to the proven performance and reliability of these devices. The estimated Beginning of Life power for a SiGe-based CPHS-RTG using 12 CPHS for a thermal inventory of 10.5 kW is greater than 600 W under deep space operating conditions. Using higher performance segmented couples currently in development that are based on skutterudite,La3−xTe4and 14-1-11 Zintl thermoelectric materials in lieu of the SiGe unicouples would increase the power level to more than1 kW. The high specific power (We/kg) attribute of CPHS-RTGs found in this study could potentially enable Radioisotope Electric Propulsion (REP) mission concepts. Past NASA REP mission concept studies identified specific power needs in excess of 6to 8 We/kg. Based on a GPHS-RTG-like system configuration, we show that at fin root temperatures between 530 K and 570K (deep space environment), specific powers exceeding 10 We/kg are achievable using high performance segmented thermoelectric converters. The compact sizing and power density of the CPHS-RTG would constitute a significant step upgrade in specific power when compared to heritage GPHS-RTG (approximately5.1 We/kg) and off-the-shelf Multi-Mission RTG (approximately 2.6 We/kg).

Nesmith, Bill J.↗
DOE OSTI2024

Modeling Si/SiGe quantum dot variability induced by interface disorder reconstructed from multiperspective microscopy

SiGe heteroepitaxial growth yields pristine host material for quantum dot qubits, but residual interface disorder can lead to qubit-to-qubit variability that might pose an obstacle to reliable SiGe-based quantum computing. By convolving data from scanning tunneling microscopy and high-angle annular dark field scanning transmission electron microscopy, we reconstruct 3D interfacial atomic structure and employ an atomistic multi-valley effective mass theory to quantify qubit spectral variability. The results indicate (1) appreciable valley splitting (VS) variability of ~50% owing to alloy disorder and (2) roughness-induced double-dot detuning bias energy variability of order 1–10 meV depending on well thickness. For measured intermixing, atomic steps have negligible influence on VS, and uncorrelated roughness causes spatially fluctuating energy biases in double-dot detunings potentially incorrectly attributed to charge disorder. Our approach yields atomic structure spanning orders of magnitude larger areas than post-growth microscopy or tomography alone, enabling more holistic predictions of disorder-induced qubit variability.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Mapping of the mechanical response in Si/SiGe nanosheet device geometries

Abstract The performance of next-generation, nanoelectronic devices relies on a precise understanding of strain within the constituent materials. However, the increased flexibility inherent to these three-dimensional device geometries necessitates direct measurement of their deformation. Here we report synchrotron x-ray diffraction-based non-destructive nanoscale mapping of Si/SiGe nanosheets for gate-all-around structures. We identified two competing mechanisms at different length scales contributing to the deformation. One is consistent with the in-plane elastic relaxation due to the Ge lattice mismatch with the surrounding Si. The second is associated with the out-of-plane layering of the Si and SiGe regions at a length scale of film thickness. Complementary mechanical modeling corroborated the qualitative aspects of the deformation profiles observed across a variety of nanosheet sample widths. However, greater deformation is observed in the SiGe layers of the nanosheets than the predicted distributions. These insights could play a role in predicting carrier mobilities of future devices.

Murray, Conal E. (ORCID:0000000199014290)↗
DOE OSTI2024

A first look at AS-ROC: a Si-Ge integrated chip readout for fast timing

Abstract Advances in timing detector technology require new specialized readout electronics. Applications demand below 10 ps time of arrival resolution and low power for a low repetition rate. A possible path to achieve O(10 ps) time resolution is an integrated chip using Silicon Germanium (SiGe) technology. Using DoE SBIR funding, Anadyne, Inc., in collaboration with UC Santa Cruz, has developed a prototype SiGe front-end readout chip optimized for low power and timing resolution. Two versions of the chip were produced with performance in simulation: a more power version with 10 ps resolution at 5 fC with 1.1 mW/channel, and a less power version with 10 ps resolution at 8 fC with 0.6 mW/channel.The chip was produced at Tower Semiconductor with 350 nm technology. The ASIC from the prototype run shows good performance: a rise time of 0.7–1 ns and 25 mV per fC response with RMS noise <1 mV. Simulation and results from the prototype will be reported in this paper.

Instruments & Instrumentation↗
DOE OSTI2024

Composition Quantification of SiGeSn Alloys Through Time-of-Flight Secondary Ion Mass Spectrometry: Calibration Methodologies and Validation With Atom Probe Tomography

Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) is a powerful technique for elemental compositional analysis and depth profiling of materials. However, it encounters the problem of matrix effects that hinder its application. In this work, we introduce a pioneering ToF-SIMS calibration method tailored for SixGeySnz ternary alloys. SixGe1-x and Ge1-zSnz binary alloys with known compositions are used as calibration reference samples. Through a systematic SIMS quantification study of SiGe and GeSn binary alloys, we unveil a linear correlation between secondary ion intensity ratio and composition ratio for both SiGe and GeSn binary alloys, effectively mitigating the matrix effects. Extracted relative sensitivity factor (RSF) value from SixGe1-x (0.07 < x < 0.83) and Ge1-zSnz (0.066 < z < 0.183) binary alloys are subsequently applied to those of SixGeySnz (0.011 < x < 0.113, 0.863 < y < 0.935 and 0.023 < z < 0.103) ternary alloys for elemental compositions quantification. These values are cross-checked by Atom Probe Tomography (APT) analysis, an indication of the great accuracy and reliability of as-developed ToF-SIMS calibration process. Furthermore, the proposed method and its reference sample selection strategy in this work provide a low-cost as well as simple-to-follow calibration route for SiGeSn composition analysis, thus driving the development of next-generation multifunctional SiGeSn-related semiconductor devices.

36 MATERIALS SCIENCE↗
DOE OSTI2018

On the Calculation of the Debye Temperature and Crystal–Liquid Phase Transition Temperature of a Binary Substitution Alloy

A method of estimating the interatomic pair interaction potential parameters for a binary substitution alloy with consideration for the deviation of its lattice parameter from the Vegard law is proposed. This method is used as a basis to calculate the Debye temperature and Grüneisen parameters of a SiGe alloy. It is shown that all these function nonlinearly variate with a change in the germanium concentration. Based on this technique and Lindemann's melting criterion, a method for calculating the liquidus and solidus temperatures of a disordered substitution alloy is proposed. The method is tested on the SiGe alloy and demonstrates good agreement with experimental data. It is shown that when the size of a nanocrystal of a solid substitution solution decreases, the difference between the liquidus and solidus temperatures decreases the more, the more noticeably the nanocrystal shape is deflected from the most energetically optimal shape.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Synchrotron x-ray thermal diffuse scattering probes for phonons in Si/SiGe/Si trilayer nanomembranes

Nanostructures offer the opportunity to control the vibrational properties of via the scattering of phonons due to boundaries and mass disorder as well as through changes in the phonon dispersion due to spatial confinement. Advances in understanding these effects have the potential to lead to thermoelectrics with an improved figure of merit by lowering the thermal conductivity and to provide insight into electron-phonon scattering rates in nanoelectronics. However, characterizing the phonon population in nanomaterials has been challenging because of their small volume and because optical techniques probe only a small fraction of reciprocal space. Recent developments in x-ray scattering now allow the phonon population to be evaluated across all of reciprocal space in samples with volumes as small as several cubic micrometers. We apply this approach, synchrotron x-ray thermal diffuse scattering (TDS), to probe the population of phonons within a Si/SiGe/Si trilayer nanomembrane. The distributions of scattered intensity from Si/SiGe/Si trilayer nanomembranes and Si nanomembranes with uniform composition are qualitatively similar, with features arising from the elastic anisotropy of the diamond structure. The TDS signal for the Si/SiGe/Si nanomembrane, however, has higher intensity than the Si membrane of the same total thickness by approximately 3.75%. Possible origins of the enhancement in scattering from SiGe in comparison with Si include the larger atomic scattering factor of Ge atoms within the SiGe layer or reduced phonon frequencies due to alloying.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Tandem Microwire Solar Cells for Flexible High Efficiency Low Cost Photovoltaics

This project has developed components of a waferless, flexible, low-cost tandem multijunction III-V/Si microwire array solar cell technology which combines the efficiency of wafered III-V photovoltaic technologies with the process designed to meet the Sunshot object. The project focused on design of lattice-matched GaAsP/SiGe two junction cell design and lattice-mismatched GaInP/Si tandem cell design. Combined electromagnetic simulation/device physics models using realistic microwire tandem structures were developed that predict >22% conversion efficiency for known material parameters, such as tunnel junction structure, window layer structure, absorber lifetimes and optical absorption and these model indicate a clear path to 30% efficiency for high quality III-V heterostructures. SiGe microwire arrays were synthesized via Cu-catalyzed vapor-liquid-solid (VLS) growth with inexpensive chlorosilane and chlorogermance precursors in an atmospheric pressure reactor. SiGe alloy composition in microwires was found to be limited to a maximum of 12% Ge incorporation during chlorogermane growth, due to the melting of the alloy near the solidus composition. Lattice mismatched InGaP double heterostructures were grown by selective epitaxy with a thermal oxide mask on Si microwire substrates using metallorganic vapor phase epitaxy. Transmission electron microscopy (TEM) analysis confirms the growth of individual step graded layers and a high density of defects near the wire/III-V interface. Selective epitaxy was initiated with a low temperature nucleation scheme under “atomic layer epitaxy” or “flow mediated epitaxy” conditions whereby the Ga and P containing precursors are alternately introduced into the reactor to promote layer-bylayer growth. In parallel to our efforts on conformal GaInP heteroepitaxy on selectively masked Si microwires, we explored direct, axial growth of GaAs on Si wire arrays as another route to a tandem junction architecture. We proposed axial, lattice-mismatched growth of a GaAs segment that extrude out of a Si wire via a self-aligned SiO 2 hollow cylindrical mask. With this growth strategy, misfit dislocations that would normally form at the GaAs/Si interface during thin film epitaxy may bend over to and thus terminate at the sidewall of the SiO 2 tube. A reactive-ion etching technique was employed 1) to remove Si to form a hollow, self-aligned SiO 2 cylindrical tube as a growth template for GaAs epitaxy using a vertical, showerhead, low-pressure metal-organic chemical-vapor deposition reactor that was operated at 0.1 atm. Successful epitaxy of axial GaAs wires on non-polar, <111>-oriented Si wire substrates was found at temperatures of ~850C. This and the other III-V/Si heterojunction wire synthesis strategies described here are promising approaches to realize future III-V/Si tandem solar cell designs.

14 SOLAR ENERGY↗
DOE OSTI2017

III-V/Active-Silicon Integration for Low-Cost High-Performance Concentrator Photovoltaics

This FPACE project was motivated by the need to establish the foundational pathway to achieve concentrator solar cell efficiencies greater than 50%. At such an efficiency, DOE modeling projected that a III-V CPV module cost of $0.50/W or better could be achieved. Therefore, the goal of this project was to investigate, develop and advance a III-V/Si mulitjunction (MJ) CPV technology that can simultaneously address the primary cost barrier for III-V MJ solar cells while enabling nearly ideal MJ bandgap profiles that can yield efficiencies in excess of 50% under concentrated sunlight. The proposed methodology was based on use of our recently developed GaAsP metamorphic graded buffer as a pathway to integrate unique GaAsP and Ga-rich GaInP middle and top junctions having bandgaps that are adjustable between 1.45 – 1.65 eV and 1.9 – 2.1 eV, respectively, with an underlying, 1.1 eV active Si subcell/substrate. With this design, the Si can be an active component sub-cell due to the semi-transparent nature of the GaAsP buffer with respect to Si as well as a low-cost alternative substrate that is amenable to scaling with existing Si foundry infrastructure, providing a reduction in materials cost and a low cost path to manufacturing at scale. By backside bonding of a SiGe, a path to exceed 50% efficiency is possible. Throughout the course of this effort, an expansive range of new understanding was achieved that has stimulated worldwide efforts in III-V/Si PV R&D that spanned materials development, metamorphic device optimization, and complete III-V/Si monolithic integration. Highlights include the demonstration of the first ideal GaP/Si interfaces grown by industry-standard MOCVD processes, the first high performance metamorphic tunnel junctions designed for III-V/Si integration, record performance of specific metamorphic sub-cell designs, the first fully integrated GaInP/GaAsP/Si double (1.7 eV/1.1 eV) and triple (1.95 eV/1.5 eV/1.1 eV) junction solar cells, the first high performance GaAsP/Si double junction cell, the demonstration of a new method that allow for rapid, quantitative and non-destructive characterization of dislocations (ECCI-electron channeling contrast imaging), the first observation, explanation and solution of the now commonly reported lifetime degradation and recovery phenomena in III-V/Si MOCVD growth, the first demonstration of a high performance SiGe cell with a bandgap of 0.9 eV, amongst other highlights. The impact of the program on the international community has been significant. At the start of our FPACE1 project and for the immediate prior years, 1-2 conference papers/annually were presented at IEEE PVSC. Once FPACE1 commenced in 2011, related efforts sprouted across the US, Europe and Asia and by 2015 there were 26 papers presented on III-V/Si multijunctions in the 2015 PVSC, demonstrating the excitement that was stimulated by the results of this FPACE1 effort.

14 SOLAR ENERGY↗
DOE OSTI2021

A New Route to Quantum-Scale Structures through a Novel Enhanced Germanium Diffusion Mechanism

This project sought to develop a fundamental understanding of the mechanisms underlying a newly observed enhanced germanium (Ge) diffusion process in silicon germanium (SiGe) semiconductor nanostructures during thermal oxidation. Using a combination of oxidationdiffusion experiments, high resolution imaging, and theoretical modeling, a model for the enhanced Ge diffusion mechanism was proposed. Additionally, a nanofabrication approach utilizing this enhanced Ge diffusion mechanism was shown to be applicable to arbitrary 3D shapes, leading to the fabrication of stacked silicon quantum dots embedded in SiGe nanopillars. A new wet etch-based method for preparing 3D nanostructures for highresolution imaging free of obscuring material or damage was also developed. These results enable a new method for the controlled and scalable fabrication of on-chip silicon nanostructures with sub-10 nm dimensions needed for next generation microelectronics, including low energy electronics, quantum computing, sensors, and integrated photonics.

36 MATERIALS SCIENCE↗
DOE OSTI2024

HPE ultralit project (ARPA-E open program 2018) final report 15

The goal of the program was to build a fully integrated optical transceiver with >1 Tb/s and <1.5 pJ/bit operating at 50 ◦ C. Optical transceivers are critical components in high-performance-computers (HPC) and data centers, and the details of their implementation has a big impact on the total power consumption (energy efficiency) of an HPC system. Our proposed transceiver used three key enabling technologies. Firstly, SiGe avalanche photodetectors have record-low sensitivities, meaning that they can reach low bit error rates with very little light input. As a result, we can drive our lasers at a lower drive current, thus saving electrical power. Secondly, we use MOS-based capacitive tuning in our deinterleaver, modulator, and demultiplexer. Capacitive tuning allows for the tuning of photonic elements with zero static power consumption. Thirdly, we use quantum dots as the gain material in our light source. This allows us to efficiently use our light source at temperatures that are typically encountered in an HPCsystem. Our proposed optical transceiver consisted of a quantum dot comb laser as a light source, a booster SOA, MOS-based deinterleavers, MOS based ring modulators, MOS-based ring demultiplexers, and SiGe APDs.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
NASA NTRS1979

Performance testing of thermoelectric generators including Voyager and LES 8/9 flight results

Several thermoelectric generators ranging in output power from 0.5 to 155 W have been completed or are undergoing testing at JPL. These generators represent a wide range of technologies, using Bi2Te3, PbTe and SiGe thermoelectric materials. Several of these generators are of a developmental type, such as HPG S/N2, and others are representative of Transit and Multi-Hundred Watt (MHW) Technology. Representative flight performance data of LES 8/9 and Voyager RTG's are presented and compared with the DEGRA computer program based on the data observed from tests of SiGe couples, modules and MHW generators.

Garvey, L.↗
NASA NTRS1990

1.00 MeV proton radiation resistance studies of single-junction and single gap dual-junction amorphous-silicon alloy solar cells

A comparative study of the radiation resistance of a-Si:H and a-SiGe:H single-junction and a-Si:H dual-junction solar cells was conducted. The cells were irradiated with 1.00-MeV protons with fluences of 1.0 x 10 to the 14th, 5.0 x 10 to the 14th and 1.0 x 10 to the 15th/sq cm and characterized using I-V and quantum efficiency measurements. The radiation resistance of single-junction cells cannot be used to explain the behavior of dual-junction cells at a fluence of 1.0 x 10 to the 15th/sq cm. The a-Si H single-junction cells degraded the least of the three cells; a-SiGe:H single-junction cells showed the largest reduction in short-circuit current, while a-Si:H dual-junction cells exhibited the largest degradation in the open-circuit voltage. The quantum efficiency of the cells degraded more in the red part of the spectrum; the bottom junction degrades first in dual-junction cells.

Abdulaziz, Salman↗
NASA NTRS1991

Effect of microstructure and composition on the improvement of n-type SiGe/GaP material

Experimental and theoretical work has been conducted at the Jet Propulsion Laboratory to improve the thermoelectric properties of n-type SiGe materials. Particular emphasis has been placed upon the understanding of the differences in dopant solid solubilities when multidoping with both Ga and P instead of P alone, as in standard SiGe alloys. A set of various experimental techniques for obtaining heavily doped hot-pressed samples coupled with thermodynamic theoretical considerations was used to relate microstructure and composition to electrical and thermal transport properties. Application of these results to high-temperature heat treatments of several SiGe/GaP samples achieved substantial improvements of the thermoelectric figure of merit Z, with average values close to 1 x 10-3K-1 over the 600-1000 C temperature range. A set of systematic anneals on heavily doped SiGe/GaP materials is reported in an attempt to consistently reproduce the optimized thermoelectric properties.

Fleurial, Jean-Pierre↗
NASA NTRS1991

High figure-of-merit n-type SiGe/GaP alloys

Improvements to the figure-of-merit of n-type SiGe have been achieved via a systematic anneal study aimed at determining the optimal P:Ga ratio. Figures-of-merit of 0.85 to 0.90 x 10-3K-1 have been routinely and reproducibly achieved starting with an initial P:Ga ratio of 3:1. These samples have carrier concentrations in excess of 4.0 x 1020/cu cm, the highest reported for SiGe. This value has been shown to be too high, resulting in unfavorably low Seebeck coefficients. The optimal carrier concentration has been shown to be 1.5-3.0 x 1020/cu cm. Thus, further improvements will be achieved by reductions in the P and Ga concentrations.

Scoville, A. N.↗
NASA NTRS1993

High frequency performance of Si(1-x)Ge(x)/Si(1-y)Ge(y)/Si(1-x)Ge(x) HBTs

The results of a theoretical study of the performance of high speed SiGe HBTs is presented. The study includes a group of SiGe HBTs in which the Ge concentration in the base is 20 percent higher than that in the emitter and collector (i.e., y = x + 0.2). It is shown that the composition dependences of f(T) and the f(max) are nonmonotonic. As the Ge composition in the emitter and collector layers is increased, f(T) and f(max) first decrease, then remain constant and finally increase to attain their highest values.

Rosenfeld, D.↗
NASA NTRS1991

Advanced Si IR detectors using molecular beam epitaxy

SiGe/Si heterojunction internal photoemission (HIP) long wavelength infrared (LWIR) detectors have been fabricated by MBE. The SiGe/Si HIP detector offers a tailorable spectral response in the long wavelength infrared regime by varying the SiGe/Si heterojunction barrier. Degenerately doped p(+) SiGe layers were grown using elemental boron, as the dopant source allows a low growth temperature. Good crystalline quality was achieved for boron-doped SiGe due to the reduced growth temperature. The dark current density of the boron-doped HIP detectors was found to be thermionic emission limited. HIP detectors with a 0.066 eV were fabricated and characterized using activation energy analysis, corresponding to a 18 micron cutoff wavelength. Photoresponse of the detectors at wavelengths ranging from 2 to 12 microns has been characterized with corresponding quantum efficiencies of 5 - 0.1 percent.

Lin, T. L.↗