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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
NASA NTRS2008

Evaluation of Silicon Nitride for Brayton Turbine Wheel Application

Silicon nitride (Si3N4) is being evaluated as a risk-reduction alternative for a Jupiter Icy Moons Orbiter Brayton turbine wheel in the event that the Prometheus program design requirements exceed the creep strength of the baseline metallic superalloys. Five Si3N4 ceramics, each processed by a different method, were screened based on the Weibull distribution of bend strength at 1700 F (927 C). Three of the Si3N4 ceramics, Honeywell AS800, Kyocera SN282, and Saint-Gobain NT154, had bend strengths in excess of 87 ksi (600 MPa) at 1700 F (927 C). These were chosen for further assessment and consideration for future subcomponent and component fabrication and testing.

Freedman, Marc R.↗
NASA NTRS2003

MoSi2-Base Composites

Addition of 30 to 50 vol% of Si3N4 particulate to MoSi2 eliminated its low temperature catastrophic failure, improved room temperature fracture toughness and the creep resistance. The hybrid composite SCS-6/MoSi2-Si3N4 did not show any matrix cracking and exhibited excellent mechanical and environmental properties. Hi-Nicalon continuous fiber reinforced MoSi2-Si3N4 also showed good strength and toughness. A new MoSi2-base composite containing in-situ whisker-type (Beta)Si3N4 grains in a MoSi2 matrix is also described.

Hebsur, Mohan G.↗
NASA NTRS2014

Mechanical Behavior of Microelectromechanical Microshutters

A custom micro-mechanical test system was constructed using off-the-shelf components to characterize the mechanical properties of microshutters. Microshutters are rectangular microelectromechanical apertures which open and close about a narrow torsion bar hinge. Displacement measurements were verified using both capacitive and digital image correlation techniques. Repeatable experiments on Si3N4 cantilever beams verified that the test system operates consistently. Using beam theory, the modulus of elasticity of the low stress Si3N4 was approximately 150 GPa, though significant uncertainty exists for this measurement due primarily to imprecise knowledge of the cantilever thickness. Tests conducted on microshutter arrays concluded that reducing the Si3N4 thickness from 250 nm to 500 nm reduces the torsional stiffness by a factor of approximately four. This is in good agreement with analytical and finite element models of the microshutters.

silicon nitride↗
DOE OSTI2020

Ultimate Suppression of Thermal Transport in Amorphous Silicon Nitride by Phononic Nanostructure.

Engineering the thermal conductivity of amorphous materials is highly essential for the thermal management of future electronic devices. Here, we demonstrate the impact of ultrafine nanostructuring on the thermal conductivity reduction of amorphous silicon nitride (a-Si3N4) thin films, in which the thermal transport is inherently impeded by the atomic disorders. Ultrafine nanostructuring with feature sizes below 20 nm allows us to fully suppress contribution of the propagating vibrational modes (propagons), leaving only the diffusive vibrational modes (diffusons) to contribute to thermal transport in a-Si3N4. A combination of the phonon-gas kinetics model and the Allen-Feldmann theory reproduced the measured results without any fitting parameters. The thermal conductivity reduction was explained as extremely strong diffusive boundary scattering of both propagons and diffusIons. These findings give rise to substantial tunability of thermal conductivity of amorphous materials, which enables us to provide better thermal solutions in microelectronic devices.

Tambo, Naoki↗
DOE OSTI2024

Multiport high-pressure synchrotron x-ray microscopy cell (CRADA Final Report)

The LBNL team developed a multiport cell allowing for fluid flow, with electrical contacts for sample bias, and with reference electrodes. The cell is currently installed and operating in beam-line 11.0.2 of the ALS, the Berkeley Synchrotron. The cell is closed by a membrane consisting of several stacked layers of graphene (1 to 3). The graphene membrane is supported on a 100 nm thick Si3N4 membrane covered with a 20 nm thin gold film for improved adhesion of the graphene and to ensure electrical conductivity. The Si3N4 film is perforated with a periodic array of holes 1 to 2 micrometers diameter. The cell can withhold an internal pressure (gas or liquid) of up to 10 atmospheres for in situ/operando studies using X-ray Photoelectron emission (XPS), and X-ray Absorption Spectroscopy (XAS). It is also ideal for tip-enhanced nano-Infrared Spectroscopy studies of molecules at the interface between the graphene and the liquid or gas filling the cell. Materials studied in the LBNL laboratory are in the form of nanoparticles, or thin films (few nm) deposited on the side of the graphene membrane facing the solution or gas inside the cell.

36 MATERIALS SCIENCE↗
NASA NTRS1974

High gas velocity burner tests on silicon carbide and silicon nitride at 1200 C

Ten SiC materials and five Si3N4 materials were exposed in a Mach 1-gas-velocity burner simulating a gas-turbine engine environment. All materials studied are commercially available. Cyclic tests up to 100 hours' duration were conducted at specimen temperatures of 1200 C. A specimen geometry was used that develops thermal stresses during thermal cycling in a manner similar to blades and vanes of a gas turbine engine. Materials were compared on a basis of weight change, dimensional reductions, metallography, fluorescent-penetrant inspection, X-ray diffraction analyses, failure mode, and general appearance. One hot-pressed SiC, one reaction-sintered SiC, and three hot-pressed Si3N4 materials survived the program goal of 100 one-hour cycles of exposures. Of the materials that failed to meet the program goal, thermal fatigue was identified as the exclusive failure mode.

Sanders, W. A.↗
NASA NTRS1978

Pressureless sintered Sialons with low amounts of sintering aid

Two Beta prime - Sialons of composition Si2.6Al0.393y0.007O0.4N3.6 and Si2.6Al0.384Y0.014O0.4N3.6 were pressureless sintered from mixtures of Y2O3 and separately milled Beta -Si3N4, AlN, and SiO2. These Sialons had densities of over 98% of theoretical, four-point bend strengths of 460 and 155 MPa at room temperature and 1400 C, respectively, and 1400 C oxidation rates lower than those reported for hot pressed Si3N4 and for a stronger Sialon with 2.5 weight percentage Y2O3.

Arias, A.↗
NASA NTRS1978

High temperature ceramics for automobile gas turbines. Part 2: Development of ceramic components

The development of ceramic components for automobile gas turbine engines is described with attention given to the steady and unsteady thermal conditions the ceramics will experience, and their anti-corrosion and strain-resistant properties. The ceramics considered for use in the automobile turbines include hot-pressed Si3N4, reaction-sintered, isostatically pressed Si3N4, hot-pressed SiC, reaction-bonded SiC, and glass ceramics. Attention is given to the stress analysis of ceramic structures and the state of the art of ceramic structural technology is reviewed, emphasizing the use of ceramics for combustion chambers and ceramic shrouded turbomachinery (a fully ceramic impeller).

Walzer, P.↗
NASA NTRS1977

Improved performance of silicon nitride-based high temperature ceramics

Results are presented regarding experiments intended for improving the strength and toughness of hot-pressed Si3N4 (HPSN), improving the strength and oxidation resistance of reaction-sintered Si3N4 (RSSN), and improving the strength and oxidation resistance of sinterable Si-Al-O-N compositions. It is shown that the use of ZrO2 instead of MgO as a sintering aid improved the room-temperature and high-temperature flexural strength of HPSN, in addition to enhancing the rupture strength and Charpy impact resistance. The use of crushable energy absorbing layers increased the impact resistance of HPSN. Impregnation of RSSN with solutions that oxidize to Al2O3 or ZrO2 resulted in increased bending strength at room temperature. Beta-prime Si-Al-O-N sintered to full density by means of the sintering aids CeO2, Y2O3, and ZrO2 yielded the greatest strength with Y2O3 and the greatest oxidation resistance with ZrO2.

Ashbrook, R. L.↗
NASA NTRS1979

Modules of rupture and oxidation resistance of S12.55Al0.6O0.72N3.52 sialon

A Sialon of formula Si2.55Al0.6O0.72N3.52 was made from ball-milled alpha-Si3N4, AIN, and SiO2 by sintering the powder compacts at 1760 C for 4 hours in stagnant nitrogen. This Sialon had an average modulus of rupture ranging from 404 megapascals (58.6 ksi) at room temperature to 254 megapascals (36.8 ksi) at 1400 C. Oxidation tests at 1400 C in air showed it to have a parabolic oxidation rate constant less than or equal to 2.8x10 to the -10th power sq g/cm4 hr, which is smaller than that of any other Si3N4-base ceramic reported in the literature.

Arias, A.↗
NASA NTRS1978

Static evaluation of surface coatings for compliant gas bearings in an oxidizing atmosphere to 650 C

Hard wear-resistant coatings and soft low shear strength coatings were developed for an air-lubricated compliant journal bearing for a future automotive gas turbine engine. The coatings were expected to function in either 540 or 650 C ambient. Soft lubricant coatings were generally limited in temperature. Therefore emphasis was on the hard wear-resistant coatings. The coating materials covered were TiC, B4C, Cr3C2, WC, SiC, CrB2, TiB2, Cr2O3, Al2O3, Si3N4, Tribaloy 800, CaF2, CaF2-BaF2 eutectic, Ni-Co, silver, CdO-graphite and proprietary compounds. The coatings on test coupons were subjected to static oven screening tests. The test consisted of exposure of material samples in an oven for 300 h at the maximum temperature (540 or 650 C) and ten temperature cycles from room temperature to the maximum service temperature. On the basis of the specimen examinations the following coatings were recommended for future wear tests: TiC (sputtered), Cr2O3 (sputtered), Si3N4 (sputtered), CdO and graphite (fused), Kaman DES (a proprietary coating), CrB2 (plasma sprayed), Cr3C2 (detonation gun) and NASA PS-106 (plasma sprayed).

Bhushan, B.↗
NASA NTRS1979

High pressure sintering of non-oxide materials

Pure materials of AIN, alpha-Si3N4 and TiC, without additives were sintered at 800 C to 1400 C under the pressures of 30 kbar and 50 kbar for 0.5 hours. The maximum density of sintered bodies for the cited materials was nearly 100% for AIN, 98% for TiC and 96% for alpha-Si3N4.

Shimado, M.↗
NASA NTRS1980

Effects of oxide additions and temperature on sinterability of milled silicon nitride

Specimens of milled alpha-Si3N4 with 0 to 5.07 equivalent percent of oxide additions were pressureless sintered at 1650 to 1820 C for 4 hours in nitrogen while covered with powdered Si3N4 + SiO2. Densities of less than or equal to 97.5 percent resulted with approximately 2.5 equivalent percent of MgO, CeO2, Y2O3, and three mixtures involving these oxides. Densities of greater than or equal to 94 percent were obtained with approximately 0.62 equivalent percent of the same additives. At most temperatures, best sinterability (density maxima) was obtained with 1.2 to 2.5 equivalent percent additive.

Arias, A.↗
NASA NTRS1980

Effect of starting powder characteristics on density, microstructure and low temperature oxidation behavior of a Si3N48w/o Y2O3 ceramic

The densification and oxidation behavior of Si3N4 - 8w/oY2O3 prepared from three commercial starting powders were studied. Bars of SN 402, SN 502, and CP 85/15 were sintered for 3 to 4.5 hours at 1750 C. A second set was hot pressed for 2 hours at 1750 C. The microstructures were studied by transmission electron microscopy and scanning electron microscopy, densities were determined, and the phase compositions were determined by X-ray diffraction. Densification and microstructure were greatly influenced by the starting powder morphology and impurity content. Although SN 402 exhibited the maximum weight lose, the highest sintered and hot pressed densities were obtained with this powder. All powders had both equiaxed and elongated grains. Sintered bars were composed of beta silicon nitride and n-melelite. In contrast, hot pressed bars contained beta silicon nitride, H-phase, and J-phase, but no melelite. Yttria distribution in sintered bars was related to the presence of cation impurities such as Ca, Fe, and Mg. A limited oxidation study at 750 C in air showed no instability in these Si3N4 - 8 w/oY2O3 specimens, regardless of startin powder.

Schuon, S.↗
NASA NTRS1981

Effect of Yttria additives on properties of pressureless-sintered silicon nitride

Si3N4-base ceramics were made from milled Si3N4 containing 11.1 wt% SiO2 and oxide additives by pressureless sintering at 1760 C. The four-point-average moduli of rupture were 460, 515, and 515 MPa at room temperature and 270, 256, and 227 MPa at 1400 C for compositions with 3.67, 7.22, and 14.0 wt% Y2O3, respectively. The oxidation resistance of these compositions decreased with increasing Y2O3 in the 600 to 1400 C range, and no surface oxide cracking or spalling was noted. Partial substitution of Al2O3 for Y2O3 reduced both strength and oxidation resistance.

Arias, A.↗
NASA NTRS1984

Material growth and characterization for solid state devices

During the reporting period, InGaAs was grown on Fe-doped (semi-insulating) (100) InP substrates by current controlled liquid phase epitaxy (CCLPE) at 640 C and current densities of 2.5A sq/cm to 5 A/sq cm for periods from 5 to 30 minutes. Special efforts were made to reduce the background carrier concentration in the grown layers as much as possible. The best layers exhibited carrier concentrations in the mid-10 to the 15th power/cu cm range and up to 10,900 sq cm/V-sec room temperature mobility. InGaAsP quaternary layers of energy gap corresponding to wavelengths of approximately 1.5 microns and 1.3 microns were grown on (100) InP substrates by CCLPE. In the device fabrication area, work was directed toward processing MISFET's using InGaAs. SiO2, Si3N4 and Al2O3 were deposited by ion beam sputtering, electron beam evaporation and chemical vapor reaction on Si, GaAs, and InGaAs substrates. SiO2 and Si3N4 sputtered layers were found to possess a high density of pinhole defects that precluded capacitance-voltage analysis. Chemical vapor deposited Al2O3 layers on Si, GaAs and InGaAs substrates also exhibited a large number of pinhole defects. This prevented achieving good MIS devices over most of the substrate surface area.

Stefanakos, E. K.↗
NASA NTRS1984

High temperature ceramic interface study

Monolithic SiC and Si3N4 are susceptible to contact stress damage at static and sliding interfaces. Transformation-toughened zirconia (TTZ) was evaluated under sliding contact conditions to determine if the higher material fracture toughness would reduce the susceptibility to contact stress damage. Contact stress tests were conducted on four commercially available TTZ materials at normal loads ranging from 0.455 to 22.7 kg (1 to 50 pounds) at temperatures ranging from room temperature to 1204C (2200 F). Static and dynamic friction were measured as a function of temperature. Flexural strength measurements after these tests determined that the contact stress exposure did not reduce the strength of TTZ at contact loads of 0.455, 4.55, and 11.3 kg (1, 10, and 25 pounds). Prior testing with the lower toughness SiC and Si3N4 materials resulted in a substantial strength reduction at loads of only 4.55 and 11.3 kg (10 and 25 pounds). An increase in material toughness appears to improve ceramic material resistance to contact stress damage. Baseline material flexure strength was established and the stress rupture capability of TTZ was evaluated. Stress rupture tests determined that TTZ materials are susceptible to deformation due to creep and that aging of TTZ materials at elevated temperatures results in a reduction of material strength.

Lindberg, L. J.↗
NASA NTRS1983

Grain-boundary phases in hot-pressed silicon nitride containing Y2O3 and CeO2 additives

Auger electron spectroscopy in conjunction with X-ray powder diffraction and scanning electron microscopy is used to analyze the grain-boundary phases of Y2O3- and CeO2-doped Si3N4 hot-pressed materials in order to demonstrate that the additives concentrate predominantly in the grain boundaries of Si3N4 in the form of various oxynitride phases. A high oxygen content observed in sample fracture surfaces was found to be consistent with the existence of an oxygen-enriched phase in the grain boundaries. The presence of yttrium and cerium in the fracture surfaces and an overall increase in the O/N ratio imply that the additive oxides are predominantly concentrated in the intergranular phases.

Guha, J. P.↗