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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Minimizing Energy Loss by Designing Multifunctional Solid Additives to Independent Regulation of Donor and Acceptor Layers for Efficient LBL Polymer Solar Cells

Solid additives are crucial in layer-by-layer (LBL) polymer solar cells (PSCs). Despite its importance, the simultaneous application of solid additives into both donor and acceptor layers has been largely overlooked. In this work, two multifunctional solid additives are actively designed, and investigated the synergistic effect on both donor and acceptor layers. Incorporating the multifunctional solid additives into the donor layer could effectively enhance the aggregation and molecular stacking of the donor polymer, leading to reduced energy disorder and minimizing ΔE 2 . When the multifunctional solid additives are introduced into the acceptor layer, they just play a role in optimizing the morphology, thereby reducing the ΔE 3 . Excitedly, the simultaneous addition of the multifunctional solid additives into both donor and acceptor layers produced a synergistic effect for decreasing ΔE 2 and ΔE 3 simultaneously, especially adding SA2, thus enabling an excellent power conversion efficiency (PCE) of 19.95% (certified as 19.68%) with an open-circuit voltage (V oc ) of 0.921 V, a short circuit current density (J sc ) of 27.08 mA cm -2 and a fill factor (FF) of 79.98%. The work highlights the potential of multifunctional solid additives in independently regulating the properties of donor and acceptor layers, which is expected as a promising approach for further developing higher performance PSCs.

36 MATERIALS SCIENCE↗
DOE OSTI2021

How Useful are Conventional I–Vs for Performance Calibration of Single- and Two-Junction Perovskite Solar Cells? A Statistical Analysis of Performance Data on ≈200 Cells from 30 Global Sources

As perovskite photovoltaics (PV) advance from the laboratory to commercial prototypes, their accurate and reliable performance testing is becoming increasingly important. The well-documented dynamic response of perovskite solar cells to an external applied voltage has led to the development of steady-state performance measurement methods; however, these methods have not been widely adopted by the perovskite PV community. A key reason for this is that steady-state measurement methods take tens of minutes to complete, as opposed to conventional "fast" current-voltage (I-V) measurements usually lasting a few seconds. Fast I-Vs arise from a snapshot, almost always not a steady-state condition of the device; however, given their widespread use, the question arises: how do performance parameters of perovskite PV compare when measured with fast I-V and with a steady-state method? Results compiled from approximately 200 perovskite PV cells, including single junction, and two-terminal perovskite-perovskite and perovskite-Si tandems, show that fast I-Vs can provide a useful measure of the open-circuit voltage of the devices, while the short-circuit current and the overall efficiency can be widely misestimated. Here, the implications of these findings on performance testing protocols are discussed and possible options for fast and accurate testing of perovskite PV are proposed.

14 SOLAR ENERGY↗
DOE OSTI2025

Monocrystalline CdSeTe/MgCdTe Double‐Heterostructure Solar Cells

This article reports monocrystalline CdSeTe/MgCdTe double‐heterostructure (DH) solar cells with varying Se compositions in the absorber layers that are grown on InSb substrates by using molecular beam epitaxy. The Se composition in the samples studied is determined to be 4%–11% through high‐resolution X‐ray diffraction (XRD) and photoluminescence measurements. Increased Se incorporation induces higher defect density attributed to increased lattice mismatch, and mixed‐phase formation due to the small difference in formation energies between the wurtzite and zinc blende phases of CdSe, which causes stacking faults and grain boundaries. Devices are fabricated by directly depositing an n‐type indium tin oxide (ITO) layer on the CdSeTe/MgCdTe DHs followed by Ag metal contacts. Reduced bandgap is observed in solar cells with increased Se composition. The devices with an absorber containing 4% Se exhibit an average open‐circuit voltage ( V OC ) of 0.925 V, a short‐circuit current density ( J SC ) of 23.4 mA/cm 2 , a fill factor ( FF ) of 0.650 and an efficiency of 14.1% without anti‐reflection coating. Absorbers with higher Se compositions result in poor device performance, mainly attributed to high defect density in the materials.

Ju, Zheng [Center for Photonics Innovation Arizona↗
DOE OSTI2021

Boosting photovoltaic performance of ternary organic solar cells by integrating a multi-functional guest acceptor

Constructing ternary structure is one of the most effective design strategies to break the efficiency ceiling of traditional binary organic solar cells (OSCs). Here, a new Y-series non-fullerene acceptor (Y-T) featuring 1,3-diethyl-2-thiobarbituric acid (DTBA) end groups is developed as a third component for the classical PM6:Y6 binary system. The champion power conversion efficiency of ternary OSCs is increased from 15.64% to 17.37% via incorporating 10 wt% Y-T, with the simultaneously enhanced open-circuit voltage (Voc) of 0.865 V, a short-circuit current density (Jsc) of 26.90 mA/cm 2 , and a fill factor (FF) of 74.97%. The positive contribution of Y-T in the ternary blend can be ascribed to the improved spectroscopic complementarity and enhanced exciton utilization ratio due to the additional energy transfer process. Moreover, Y-T guest acceptor plays a critical role in adjusting the active layer morphology and facilitating three-dimension phase separation, resulting in a balanced charge transport and enhanced FF of ternary OSCs. Overall, this work provides insight into the molecular design of non-fullerene acceptor and suggest guidelines to rationally select guest component for ternary OSCs.

14 SOLAR ENERGY↗
DOE OSTI2021

A naphthalene diimide side-chain polymer as an electron-extraction layer for stable perovskite solar cells

Poly(N-(5-(5-norbornene-2-carbonyl)oxy)pentyl)-N'-n-hexyl-naphthalene-1,8:4,5-bis(dicarboximide) has been synthesized by esterification of (N-(5-hydroxypentyl)-N'-n-hexyl-naphthalene-1,8:4,5-bis(dicarboximide)) with exo-5-norbornene-2-carboxylic acid, and has been polymerized using the first-generation Grubbs initiator. This side-chain polymer exhibits good transparency throughout the visible (absorption onset at ca. 400 nm), good solubility in common low- and medium-polarity organic solvents, good resistance to dimethylformamide, and appropriate electron affinity for use as an electron-extraction layer in lead-halide perovskite solar cells. The performance of this polymer in n-i-p perovskite solar cells was compared to that of several small-molecule naphthalene-1,8:4,5-bis(dicarboximide) derivatives and of SnO 2 . Solar cells using the polymer exhibited open-circuit voltages of up to 1.02 V, short-circuit currents of over 21 mA cm –2 , and power conversion efficiencies (PCE) reaching 14% which stabilize at 13.8% upon 90 s of illumination. Meanwhile control SnO 2 devices exhibited a PCE of ca. 16%, and small-molecule devices gave PCE values of less than 10%. Here, the devices employing the polymer exhibited improved long-term stability relative to the SnO 2 control devices under continuous illumination.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Effect of ZnO and PEDOT:PSS charge selective layers on photovoltage of cuprous oxide (Cu 2 O) heterojunction solar cells

Electrochemical deposition (ECD) of Cu 2 O provides a scalable and low temperature pathway to solar cells with a theoretical high energy conversion efficiency of 23%, based on the 2.0–2.2 eV band gap of Cu 2 O. However, existing ECD-Cu 2 O devices are plagued by poor crystallinity and low selectivity of the electron and hole transport layers. Here we use Vibrating Kelvin Probe Surface Photovoltage Spectroscopy (VKP-SPV) to probe the charge transfer selectivity in FTO/ZnO/Cu 2 O/PEDOT:PSS/Ni heterojunction solar cells. Selective electron extraction is achieved at the ZnO back contact to Cu 2 O, as confirmed by a negative surface photovoltage signal. While the uncoated Cu 2 O surface is electron-selective due to the formation of a hole depletion layer, spin coating of a PEDOT:PSS film turns it into a hole-selective interface. After adding nickel metal ink top electrodes, functional 1.0 cm 2 solar cells with power conversion efficiency (PCE) of up to 0.07%, 195 mV open-circuit voltage, and 1.28 mA cm –2 short-circuit photocurrent are achieved. The photovoltaic performance is higher for aluminum doped zinc oxide (AZO) substrates than for fluorine doped tin oxide (FTO) due to the presence of a n-/p-junction that further increases the electron selectivity of the AZO/ZnO/Cu 2 O contacts. Overall, this work demonstrates the first application of PEDOT:PSS as a hole transport layer (HTL) for Cu 2 O and the use of VKP-SPV to measure the photovoltage contributions of the Cu 2 O interfaces. Furthermore, the ability to fabricate Cu 2 O solar cells at near room temperature without the use of vacuum methods or rare elements is an important step towards a scalable Cu 2 O PV technology.

14 SOLAR ENERGY↗
DOE OSTI2022

Self-Aligned Selective Area Front Contacts on Poly -Si/SiO x Passivating Contact c -Si Solar Cells

We report both polarity poly-Si/SiO x passivating contacts in a front/back device configuration may represent the next solar cell architecture after tunnel oxide passivating contacts (TOPCon) cells, but high parasitic absorption in the front poly -Si layer often limits its performance. This work explores a wet etching technique to remove the front poly -Si in the nonmetallized regions using self-aligned metal grids as an etch mask. We systematically examine various dielectric layers (SiN x ,Al 2 O 3 , and stacks thereof) to study the repassivation of the etched n + surface, and find that an SiN x /Al 2 O 3 passivation stack can effectively repassivate the etched surface, which we attribute to field-effect passivation from the positive fixed charge from the SiN x layer, and excellent chemical passivation property from Al 2 O 3 in the form of atomic H. We demonstrate a front/back poly-Si/SiO x passivating contact device, with an open-circuit voltage (V oc ) of 690 mV, short-circuit current density (J sc ) of 39.8 mA/cm 2 , fill factor of 78%, and power conversion efficiency of 21.4%. Furthermore, simulations using SunSolve and Quokka 3 show good agreement with both the optical and electrical properties of the experimental device. The power loss analysis reveals improvements in the optical loss from the back Ti adhesion and front SiN x layers would lead to a 23.5% device. Lastly, a techno-economic model compares the production cost of this improved cell with the current TOPCon cells. Our results highlight that further cost reductions in single-sided doped poly -Si layers are needed to compete with mainstream passivated emitter and rear cell, and TOPCon technologies.

14 SOLAR ENERGY↗
DOE OSTI2020

A New Approach to Indoor Characterization of PV Module Energy Yield Parameters

Temperature and solar irradiance are among the most relevant parameters that affect the energy yield of photovoltaic cells and modules. A rise in the module temperature leads to a significant decrease in the open circuit voltage and a small increase in the short circuit current. Here we use a new tool to determine temperature coefficients as well as to assess power rating of multi c-Si, mono c-Si, CdTe, and CIGS-based PV modules in controlled indoor conditions per IEC 60891 and IEC 61853-1. We use the tool to explore how nonuniformities in module temperature affect the accuracy of the temperature coefficients.

14 SOLAR ENERGY↗
DOE OSTI2022

Statistical Performance Analysis on Approximately 320 Perovskite Single- and Two-Junction Solar Cells and Modules from >30 Global Sources

As perovskite photovoltaics (PV) advance from the laboratory to commercial prototypes, their accurate and reliable performance testing is becoming increasingly important. The well documented dynamic response of perovskite solar cells to an external applied voltage has led to the development of steady-state performance measurement methods; however, these methods have not been widely adopted by the perovskite PV community. A key reason for this is that steady-state measurement methods take tens of minutes to complete, as opposed to conventional "fast" current-voltage (I-V) measurements usually lasting a few seconds. Fast I-Vs arise from a snapshot, almost always not a steady-state condition of the device; however, given their widespread use, the question arises: how do performance parameters of perovskite PV compare when measured with fast I-V and with a steady-state method? We compile results from ca. 320 perovskite PV cells and modules, including single junction, and two-terminal perovskite-perovskite and perovskite-Si tandems, and show that fast I-Vs can provide a useful measure of the open-circuit voltage of the devices, while the short-circuit current and the overall efficiency can be widely misestimated. We discuss implications of these findings on performance testing protocols and propose possible options for fast and accurate testing of perovskite PV.

asymptotic↗
DOE OSTI2021

Study of the Heater-Coil Electrical Insulation for the HL-LHC Low Beta Quadrupoles

In the framework of the HL-LHC project, the present LHC low-β superconducting quadrupoles will be substituted with higher performance Nb 3 Sn magnets (MQXF) with 11.4 T coil peak field. MQXF coils are impregnated with epoxy resin to reduce risk of stress concentration on the brittle conductor. The magnet quench protection is provided by CLIQ and quench heaters to ensure a redundant system. Quench heaters are impregnated with the coils in order to have suitable thermal contact with them, and to prevent the hot spot temperature from exceeding 350K during normal operation in case of a quench. Quench heaters are insulated from the coil by S-2 Glass and polyimide. Here, the test of the first MQXF prototype (4 m long) MQXFAP1 was stopped by a coil-to-ground short circuit triggered by a heater-to-coil short. This issue triggered a root analysis of the causes of this short. Here we prove that the use of a non-conforming cloth in coil impregnation, further weakened by non-conforming high voltage test, has triggered the shorts. Moreover, we present an analysis of the heater-to-coil insulation strength, showing the role of blistering phenomena and how they are triggered by a combination of magnet powering and heater firing.

43 PARTICLE ACCELERATORS↗
DOE OSTI2024

Sub‐0.6 eV Inverted Metamorphic GaInAs Cells Grown on Inp and GaAs Substrates for Thermophotovoltaics and Laser Power Conversion

Abstract Inverted metamorphic Ga 0.3 In 0.7 As photovoltaic converters with sub‐0.60 eV bandgaps grown on InP and GaAs are presented. Threading dislocation densities are 1.3 ± 0.6 × 10 6 and 8.9 ± 1.7 × 10 6 cm −2 on InP and GaAs, respectively. The devices generate open‐circuit voltages of 0.386 and 0.383 V, respectively, under irradiance producing a short‐circuit current density of ≈10 A cm −2 , yielding bandgap‐voltage offsets of 0.20 and 0.21 V. Power and broadband reflectance measurements are used to estimate thermophotovoltaic (TPV) efficiency. The InP‐based cell is estimated to yield 1.09 W cm −2 at 1100 °C versus 0.92 W cm −2 for the GaAs‐based cell, with efficiencies of 16.8 versus 9.2%. The efficiencies of both devices are limited by sub‐bandgap absorption, with power weighted sub‐bandgap reflectances of 81% and 58%, respectively, the majority of which is assumed to occur in the graded buffers. The 1100 °C TPV efficiencies are estimated to increase to 24.0% and 20.7% in structures with the graded buffer removed, if previously demonstrated reflectance is achieved. These devices also have application to laser power conversion in the 2.0–2.3 µm atmospheric window. Peak laser power converter efficiencies of 36.8% and 32.5% are estimated under 2.0 µm irradiances of 1.86 and 2.81 W cm −2 , respectively.

14 SOLAR ENERGY↗
DOE OSTI2024

Characterization of n-Type Iodine-Doped and Indium-Doped CdTe/Cd-Se-Te Thin Films Fabricated by Close-Spaced Sublimation Epitaxy

In this study, n-type CdTe thin films, specifically iodine-doped CdTe (CdTe:I), indium-doped CdTe (CdTe:In), and indium-doped Cd-Se-Te (CST:In), were synthesized using close-spaced sublimation epitaxy (CSSE). Characterization techniques secondary ion mass spectrometry (SIMS), electron backscatter diffraction (EBSD), Hall-effect measurements, and time-resolved photoluminescence (TRPL) were employed to analyze the chemical, structural, and electronic properties of these materials. The results indicated epitaxial single crystal CSSE films grew on the single crystal substrates, with carrier density ranging from 10^14 - 10^16 cm -3 , and after post-annealing, the minority-carrier lifetimes reach near the radiative limit. Additionally, a preliminary exploration of homojunction structures with an n- type (CdTe:In /CST:In /CdTe:I) /CdTe:P /Cu /Mo configuration was performed. The best device performance was achieved with CdTe:I including CdS aiding in band alignment, resulting in a power conversion efficiency (..eta..) of 2.61% with open circuit voltage (Voc) of 850 mV, fill factor (FF) of 47.8%, and short-circuit current (Jsc) of 6.44 mA/cm 2 . The observed low Jsc and efficiency may be attributed to a buried junction and a poor interface, due to dopant interdiffusion. Consequently, further investigations focusing on interface optimization, diffusion blocking, and reduced recombination through passivation, are crucial to enhancing the efficiency of CSSE CdTe homojunction devices in the future.

cadmium compounds↗
DOE OSTI2021

A Chlorinated Donor Polymer Achieving High‐Performance Organic Solar Cells with a Wide Range of Polymer Molecular Weight

Abstract In the field of non‐fullerene organic solar cells (OSCs), compared to the rapid development of non‐fullerene acceptors, the progress of high‐performance donor polymers is relatively slow. The property and performance of donor polymers in OSCs are often sensitive to the molecular weight of the polymers. In this study, a chlorinated donor polymer named D18‐Cl is reported, which can achieve high performance with a wide range of polymer molecular weight. The devices based on D18‐Cl show a higher open‐circuit voltage ( V OC ) due to the slightly deeper energy levels and an outstanding short‐circuit current density ( J SC ) owing to the appropriate long periods of blend films and less ([6,6]‐phenyl‐C71‐butyric acid methyl ester) (PC 71 BM) in mixed domains, leading to the higher efficiency of 17.97% than those of the D18‐based devices (17.21%). Meanwhile, D18‐Cl can achieve high efficiencies (17.30–17.97%) when its number‐averaged molecular weight ( M n ) is ranged from 45 to 72 kDa. In contrast, the D18‐based devices only exhibit relatively high efficiencies in a narrow M n range of ≈70 kDa. Such property and performance make D18‐Cl a promising donor polymer for scale‐up and low‐cost production.

Zeng, Anping↗
DOE OSTI2024

InP- and GaAs-Based 0.6 eV GaInAs Devices for Thermophotovoltaics and Laser Power Conversion

Emerging applications such as thermal energy grid storage, waste heat recovery and portable power generation require efficient thermophotovoltaic (TPV) converters tuned to temperatures near 1000 Degrees Celsius or below. Metamorphic GaInAs with larger lattice constants than InP present a promising option for these needs. The ability to grow these devices on GaAs substrates instead of more expensive InP would enhance the scalability of these devices. In this talk, we present inverted metamorphic Ga0.3In0.7As photovoltaic converters with sub-0.60 eV bandgaps grown on InP and GaAs substrates. These devices are realized using InAsP or GaInP/InAsP compositionally graded buffers which exhibit threading dislocation densities of 1.3 +/- 0.6 x 106 cm-2 and 8.9 +/- 1.7 x 106 cm-2 on InP and GaAs, respectively. Despite this difference in defect density, the devices generate similar open-circuit voltages of 0.386 V and 0.383 V, respectively, under irradiance producing a short-circuit current density of -10 A/cm2, with bandgap-voltage offsets of 0.20 and 0.21 V. We estimate their thermophotovoltaic efficiency using these measurements coupled with broadband reflectance measurments. The InP-based cell is estimated to yield 1.09 W/cm2 at 1100 Degrees Celsius vs. 0.92 W/cm2 for the GaAs-based cell, with TPV efficiencies of 16.8 vs. 9.2%. Both devices are limited by sub-bandgap absorption, which we assess largely occurs in the graded buffers. We estimate that the 1100 Degrees Celsius thermophotovoltaic efficiencies would increase to 24.0% and 20.7% in structures with the graded buffer removed, if previously demonstrated reflectance is achieved. These devices also have application as laser power converters in the 2.0-2.3 um atmospheric window. We estimate efficiencies of 36.8% and 32.5% under 2.0 um monochromatic irradiance of 1.86 W/cm2 and 2.81 W/cm2, respectively.

ENGINEERING,MATERIALS SCIENCE,SOLAR ENERGY↗
DOE OSTI2026

Photoelectrode Durability in Two- versus Three-Electrode Configurations: Understanding the Impact of Circuit Configuration on Water-Splitting Stability

Device durability remains a significant challenge in photoelectrochemical (PEC) water splitting under ambient conditions. Yet, a lack of understanding of the test configuration and applied bias effects continue to hinder progress. In this study, we differentiate two-electrode (2E) and three-electrode (3E) configurations for evaluating PEC material durability, focusing particularly on their impacts on photoabsorber solid-state operating conditions. Our results underscore the fallacy of inferring 2E device stability from durability measurements performed solely in 3E configurations. Unmeasured and often misunderstood total circuit bias in 3E tests moderates material degradation, leading to the overestimation of photoelectrode stability compared to short-circuit operation. We demonstrate how the photoabsorber's operating voltage critically governs charge separation, surface stability, and degradation mechanisms during PEC operation. With these findings, we propose a standardized framework for conducting more reliable 3E durability experiments that simulate unassisted performance to help accelerate the development of robust, stable materials for solar-driven water splitting.

08 HYDROGEN↗
DOE OSTI2026

Double Aperture HTS Dipole Magnet Model for the Persistent Current Operation

Particle accelerators use many different types of magnets. There is an interest in replacing rather low-field conventional resistive magnets with high-temperature superconducting (HTS) magnets. The main goal is to reduce operational expenses, which is critical during the continuously increasing cost of electricity. At Fermilab, several HTS accelerator magnets were built and successfully tested. The paper described a variant of the double-aperture dipole magnet that could be suitable for future Lepton Colliders. A single short-circuited HTS coil of 3.8 kA generates a homogeneous magnetic field of 57 mT in both magnet gaps of 84 mm. The short model magnet was designed, built, and successfully tested at liquid nitrogen temperature. This magnet works in a persistent current mode, which provides additional cost savings when used in particle storage rings operated at a stable magnetic field. The results of design, fabrication, and tests are presented and discussed. The magnet demonstrated a high magnetic field stability in both apertures, efficiency of correction coils, and primary powering circuit.

Kashikhin, Vladimir [Fermilab] (ORCID:000000017249↗
DOE OSTI2023

Short-Depth QAOA circuits and Quantum Annealing on Higher-Order Ising Models (Rev.2)

The Quantum Alternating Operator Ansatz (QAOA) and Quantum Annealing (QA) are quantum algorithms that are both based on the adiabatic theorem and both have the goal of sampling the optimal solution(s) of combinatorial optimization problems. Quantum annealing has been physically instantiated on D-Wave devices using superconducting flux qubits, and QAOA can be programmed on digital gate-model quantum computers such as the programmable superconducting transmon qubits devices of the IBMQ series, for instance ibm washington. QAOA and QA address the same types of problems, but it is unclear how they will scale to large problem sizes and to larger and higher-fidelity quantum computers. In this article, we present a direct comparison between QAOA, one and two rounds, run on all 127 qubits of ibm washington and QA run on D-Wave Advantage system4.1 and Advantage system6.1. The problems which allow for this comparison are random Ising model problems whose connectivity matches the heavy hexagonal lattice topology of ibm washington and the Pegasus graph connectivity of the two D-Wave devices. We create two classes of problem instances for this comparison: one with higher order terms (ZZZ variable interactions), linear terms, and quadratic terms, and a separate problem type with only linear and quadratic terms. Our QAOA circuits are novel and extremely short depth, with a CNOT depth of 6 per round, which allows whole chip usage of ibm washington’s heavy hexagonal lattice and can be applied to future heavy-hex chips. We also test the effectiveness of the error suppression technique digital dynamical decoupling on the QAOA circuits. The QAOA circuits compiled to ibm washington are composed of several thousand circuit instructions, approximately 3, 000 depending on the details of the circuit, making these some the largest quantum circuits ever executed on a digital quantum processor. QAOA and QA are compared against the classical heuristic algorithm of simulated annealing and all problem instances are exactly solved using CPLEX in order to evaluate which samplers, if any, correctly found the ground state solution(s) of the problem instances. We find that (i) QA outperforms QAOA on all problem instances, (ii) QAOA samples the problems better than random sampling, and (iii) QAOA angle computation exhibits clear parameter concentration across the ensemble of Ising models.

127 Qubits↗
DOE OSTI2021

Self-Healing, Improved Efficiency Solid State Rechargeable Li/I 2 Based Battery

Solid state electrolytes are receiving significant interest due to the prospect of improved safety, however, addressing the incidence and consequence of internal short circuits remains an important issue. In this study, a battery based on a LiI-LiI(HPN) 2 solid state electrolyte demonstrated self-healing after internal shorting where the cells recovered and continued to cycle effectively. The functional rechargeable electrochemistry of the self-forming Li/I 2 -based battery was investigated through interfacial modification by inclusion of Li metal (at the negative interface), and/or fabricated carbon nanotube substrates at the positive interface. A cell design with lithium metal at the negative and a carbon substrate at the positive interface produced Coulombic efficiencies > 90% over 60 cycles. Finally, the beneficial effects of moderately elevated temperature were established where a 10 °C temperature increase led to ~5× lower resistance.

25 ENERGY STORAGE↗