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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Stochastic fracture generation and thermo-hydro-mechanical modeling in an equivalent continuum framework for enhanced geothermal systems

Enhanced geothermal systems (EGS) involve fracturing low permeability material to establish well connectivity and then injecting and circulating fluid into the fractured subsurface for geothermal power production. Changes in fracture aperture from contraction of the cooling matrix rock may alter network connectivity and risk thermal short-circuiting. Thermo-hydro-mechanical (THM) models are a useful tool to study these processes. However, as fracture networks are complex, and data may be limited, fracture networks in THM models are often stochastically generated. Given reliance on stochastic fracture networks and THM modeling to represent the subsurface and assess productivity of EGS, increased understanding of the influence of such statistically derived fracture networks on flow and heat transport in THM models is needed. Here, a new fracture process model is developed in the reactive transport code PFLOTRAN to stochastically generate fracture families and simulate changes in fracture aperture over time due to temperature changes of the rock matrix. Sixty-four different fracture networks ranging from well to poorly-connected, are modeled in PFLOTRAN with and without mechanical processes (THM vs TH). Results indicate that for well-connected fracture networks, thermal short-circuiting is less of a concern due to the abundance of available alternative flowpaths. For poorly-connected fracture networks, inclusion of mechanical processes showed steep thermal drawdown coincident with increase in fracture aperture along developing colder flowpaths, demonstrating the risk of thermal short-circuiting. Simulations with additional, larger fractures engineered to establish connectivity in a poorly-fractured subsurface, indicate that while stochastic variation of fracture orientation of the background network had limited influence, such variation in the engineered fractures significantly affected flow and heat transport.

Discrete fracture networks (DFN)↗
DOE OSTI2021

Energy transduction by reversible electron bifurcation

Electron bifurcation is a biological energy conversion process that oxidizes a two-electron donor at medium potential, coupled to the reduction of a high- and a low-potential acceptor species. This process is often fully reversible (can occur close to ΔG ≈ 0), allowing the creation of strong reductants with minimal free energy cost, using compounds with higher reduction potentials. For many years, the internal workings of electron bifurcating enzymes were poorly understood, especially regarding how short-circuit reactions are prevented. Recently, a conserved energy landscape was proposed to naturally insulate against short-circuit reactions, enabling efficient and reversible electron bifurcation (the reversible EB scheme). Here, we review the physical principles that underpin the EB scheme, describe how the reversible EB scheme is distinct from previous views, and outline questions that remain open.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1993

Evaluation of Kapton pyrolysis, arc tracking, and flashover on SiO(x)-coated polyimide insulated samples of flat flexible current carriers for Space Station Freedom

Kapton polyimide wiring insulation was found to be vulnerable to pyrolization, arc tracking, and flashover when momentary short-circuit arcs have occurred on aircraft power systems. Short-circuit arcs between wire pairs can pyrolize the polyimide resulting in a conductive char between conductors that may sustain the arc (arc tracking). Furthermore, the arc tracking may spread (flashover) to other wire pairs within a wire bundle. Polyimide Kapton will also be used as the insulating material for the flexible current carrier (FCC) of Space Station Freedom (SSF). The FCC, with conductors in a planar type geometric layout as opposed to bundles, is known to sustain arc tracking at proposed SSF power levels. Tests were conducted in a vacuum bell jar that was designed to conduct polyimide pyrolysis, arc tracking, and flashover studies on samples of SSF's FCC. Test results will be reported concerning the minimal power level needed to sustain arc tracking and the FCC susceptibility to flashover. Results of the FCC arc tracking tests indicate that only 22 volt amps were necessary to sustain arc tracking (proposed SSF power level is 400 watts). FCC flashover studies indicate that the flashover event is highly unlikely.

Stueber, Thomas J.↗
DOE OSTI2026

Quantifying System Strength From Grid-Forming Resources Using Frequency Scan Approach: Preprint

Current industry practices for quantifying the system strength contribution from grid-forming (GFM) resources to ensure stability of power systems dominated by inverter-based resources (IBRs) are primarily based on iterative electromagnetic transient (EMT) time-domain simulation studies. While feasible, these approaches are resource-intensive, lack scalability and intuition, and might not evaluate the system strength contribution over the entire frequency range of interest. This paper introduces a novel, frequency-domain approach to quantify system strength support provided by a GFM resource using frequency scans. The proposed method uses transfer functions from the grid voltage magnitude (V) and phase (?), respectively, to the reactive (Q) and active power (P) output of a GFM resource for quantifying its contribution to system strength. These transfer functions provide a direct measure of the ability of a GFM resource to behave as a stiff voltage source behind a reactance over a specified frequency range, enabling robust quantification of its system strength contribution. The key innovation of this work is the development of a frequency domain system strength metric called the dynamic short-circuit ratio (dSCR) that is suitable for IBR-dominated power systems and is directly related with the familiar short circuit ratio (SCR) metric. The new metric, dSCR, enables the assessment of system strength contributions from both synchronous machines and converter-based GFM resources using a unified benchmark, which is not possible with the traditional SCR metric. The paper also demonstrates how impedance scans could identify if an unstable condition observed during weak grid conditions is a result of the lack active or reactive power support or both. By leveraging the proposed frequency-domain dSCR metric for quantifying system strength contribution from GFM IBRs, the paper demonstrates targeted mitigation strategies for weak grid instabilities without resorting to repeated, time-consuming time-domain simulations. The result is a scalable and efficient approach to remediate stability challenges in power systems with high shares of IBRs and accelerating the integration of GFM technologies for system strength support in power systems.

24 POWER TRANSMISSION AND DISTRIBUTION↗
NASA NTRS2003

Safety Performance of Small Lithium-Ion Cells in High Voltage Batteries

Topics covered include: Small-cell EAPU work done by NASA-JSC & COM DEV; Looking at safety features (short circuit protection - PTCs); Early tests showed that long strings do not withstand short circuit; a) Some PTCs experience large negative voltages; b) Destructive results. Solution: group cells into shorter substrings, with bypass diodes Work included: a) Tests with single cells shorted; b) Tests with single cells with imposed-negative voltages; c) 6s, 7s and 8s string shorts; and d) Tests with protection scheme in place, on 12s and 41s x 5p.

Cowles, Philip R.↗
DOE OSTI2022

Simultaneously Enhancing Exciton/Charge Transport in Organic Solar Cells by an Organoboron Additive

Efficient exciton diffusion and charge transport play a vital role in advancing the power conversion efficiency (PCE) of organic solar cells (OSCs). Here, a facile strategy is presented to simultaneously enhance exciton/charge transport of the widely studied PM6:Y6-based OSCs by employing highly emissive trans-bis(dimesitylboron)stilbene (BBS) as a solid additive. BBS transforms the emissive sites from a more H-type aggregate into a more J-type aggregate, which benefits the resonance energy transfer for PM6 exciton diffusion and energy transfer from PM6 to Y6. Transient gated photoluminescence spectroscopy measurements indicate that addition of BBS improves the exciton diffusion coefficient of PM6 and the dissociation of PM6 excitons in the PM6:Y6:BBS film. Transient absorption spectroscopy measurements confirm faster charge generation in PM6:Y6:BBS. Moreover, BBS helps improve Y6 crystallization, and current-sensing atomic force microscopy characterization reveals an improved charge-carrier diffusion length in PM6:Y6:BBS. Finally, owing to the enhanced exciton diffusion, exciton dissociation, charge generation, and charge transport, as well as reduced charge recombination and energy loss, a higher PCE of 17.6% with simultaneously improved open-circuit voltage, short-circuit current density, and fill factor is achieved for the PM6:Y6:BBS devices compared to the devices without BBS (16.2%).

14 SOLAR ENERGY↗
DOE OSTI2021

Device Performance of Emerging Photovoltaic Materials (Version 2)

Following the 1st release of the "Emerging photovoltaic (PV) reports", the best achievements in the performance of emerging photovoltaic devices in diverse emerging photovoltaic research subjects are summarized, as reported in peer-reviewed articles in academic journals since August 2020. Updated graphs, tables, and analyses are provided with several performance parameters, e.g., power conversion efficiency, open-circuit voltage, short-circuit current density, fill factor, light utilization efficiency, and stability test energy yield. These parameters are presented as a function of the photovoltaic bandgap energy and the average visible transmittance for each technology and application and are put into perspective using, e.g., the detailed balance efficiency limit. The 2nd installment of the "Emerging PV reports" extends the scope toward tandem solar cells and presents the current state-of-the-art in tandem solar cell performance for various material combinations.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Role of p-GaN layer thickness in the degradation of InGaN-GaN MQW solar cells under 405 nm laser excitation

GaN-based solar cells with InGaN multiple quantum wells (MQWs) are promising devices for application in space environment, concentrator solar systems, wireless power transmission and multi-junction solar cells. It is therefore important to understand their degradation kinetics when submitted to high-temperature and high-intensity stress. We submitted three samples of GaN-InGaN MQW solar cells with p-AlGaN electron-blocking-layer with different thickness of the p-GaN layer to constant power stress at 310 W/cm 2 , 175 °C for several hundred hours. The main degradation modes are a reduction of open-circuit voltage, short-circuit current, external quantum efficiency, power conversion efficiency and electroluminescence. In particular, we observed that a thinner p-GaN layer results in a stronger degradation observed on the cell operating parameters. The analysis of the dark I-V characteristics showed an increase in low-forward bias current and the analysis of electroluminescence showed a decrease in the electroluminescene emitted by the (forward biased) cell, as a consequence of stress. This work highlights that the cause of degradation is possibly related to a diffusion mechanism, which results in an increase of defect density in the active region. Finally, the impurities involved in the diffusion processes possibly originate from the p-side of the devices, therefore a thicker p-GaN layer reduces the amount of defects reaching the active region.

14 SOLAR ENERGY↗
DOE OSTI2020

Optoelectronic and material properties of solution-processed Earth-abundant Cu 2 BaSn(S, Se) 4 films for solar cell applications

Copper barium thioselenostannate, Cu 2 BaSnS 4-x Se x (CBTSSe), absorbers employ low-toxicity and abundant metals while offering low-cost manufacturing options, controllable stoichiometry and band gap tunability (from 2 eV at x = 0 to 1.55 eV at x = 3). CBTSSe can therefore be considered a prospective candidate for maintaining or improving upon the advantages of already commercialized Cu(In,Ga)(S,Se) 2 (CIGSSe) and CdTe absorbers. Here, we focus on solution-deposited stoichiometric CBTSSe films with band gap of 1.59 eV (x ≈ 3) and explore the fundamental film properties. Temperature- and excitation-dependent photoluminescence studies reveal a dominant defect emission at ~1.5 eV and a second deep defect feature at 1.15 eV. From time-resolved terahertz measurements, we find a charge carrier (electron and hole sum) mobility of ~140 cm 2 /Vs—i.e., comparable to values in CIGSSe or Cu 2 ZnSnS 4-x Se x (CZTSSe)—as well as a two-component minority carrier lifetime. A longer-lived lifetime component (~2 ns) arises from bulk recombination. However, strong recombination at the (bare) surface leads to a ~50 ps lifetime, inferior to state-of-the-art CIGSSe or CZTSSe absorbers. This recombination issue may worsen for CBTSSe/CdS interfaces, due to a cliff-like band alignment with 0.6 eV band offset, as revealed by ultraviolet photoemission spectroscopy. A low number of charge carriers within the absorber further contributes to a high series resistance. Employing these films, we also report the highest performance achieved from solution-processed trigonal CBTSSe thin-film photovoltaic devices, with open circuit voltage, short-circuit current density, fill factor and efficiency of 470 mV, 14.3 mA/cm 2 , 43.6% and 2.9%, respectively. The physical measurements provided on the stoichiometric solution-processed CBTSSe absorber further point to critical areas for future improvement of CBTSSe and related photovoltaic cells in the quest for higher efficiency devices based on earth abundant metals.

14 SOLAR ENERGY↗
DOE OSTI2023

Determining circuit model parameters from operation data for PV system degradation analysis: $\mathrm{PVPRO}$

Physics-based circuit parameters like series and shunt resistance are essential to provide insights into the degradation status of photovoltaic (PV) arrays. However, calculating these parameters typically requires a full current-voltage characteristic (I-V curve), the acquisition of which involves specific measurement devices and costly methods. Thus, I-V curves of the PV system level are often not available. Here this paper proposes a methodology (PVPRO) to estimate these I-V curve parameters using only operation (string-level DC voltage and current) and weather data (irradiance and temperature). PVPRO first performs multi-stage data pre-processing to remove noisy data. Next, the time-series DC data are used to fit an equivalent circuit single-diode model (SDM) to estimate the circuit parameters by minimizing the differences between the measured and estimated values. In this way, the time evolutions of the SDM parameters are obtained. We evaluate PVPRO on synthetic datasets and find an excellent estimation of both SDM and the key I-V parameters (e.g., open-circuit voltage, short-circuit current, maximum power, etc.) with an average relative error of 0.55%. The performance, especially the extracted degradation rate of parameters, is robust to various measurement noises and the presence of faults. In addition, PVPRO is applied to a 271 kW PV field system. The relative error between the real and estimated operation voltage and current is less than 1%, suggesting that degradation trends are well captured. PVPRO represents a promising open-source tool to extract the time-series degradation trends of key PV parameters from routine operation data.

14 SOLAR ENERGY↗
DOE OSTI2023

Degradation behavior of CIGS solar Cells: A parametric analysis

A parametric study of the effect of bulk and interface properties on device characteristics as a function of heat and light stress under open-circuit and short-circuit conditions is developed for Cu(In,Ga)(S,Se) 2 solar cells using SCAPS-1D simulator. The variables and interdependencies modeled include: (1) conduction band offset (CBO) between buffer and absorber; (2) buffer ionized donor density; (3) CIGS shallow acceptor density; (4) CIGS deep acceptor density; (5) CIGS shallow donor density; (6) ionized acceptor concentration in the ordered vacancy compound (OVC) CIGS/buffer interface; and (7) back contact work-function. An increase in absorber shallow acceptor or a decrease in shallow donor density results in an increase in net carrier density and open-circuit voltage (V OC ). Further, a decrease in V OC is observed with an increase in the deep acceptors or neutral midgap defects in the CIGS due to higher charge carrier recombination. A change of CBO from spike to cliff condition is a dominant mechanism of decreasing VOC with an interface defect density of 10 12 cm -2 . The minimum depletion width is found to be specifically sensitive to CBO and interface defect density. An inflection in the capacitance–voltage curves (in reverse bias) is observed with simultaneous increase in bulk deep acceptor density and shallow donor density near the back contact.

14 SOLAR ENERGY↗
DOE OSTI2023

Modeling, testing, and mitigation of electromagnetic pulse on PV systems

Electromagnetic Pulse (EMP) poses a significant threat to the normal operation of power systems, especially with the increasing penetration of renewable energy. Without adequate protection, EMP can severely damage equipment or result in circuit breakdowns or short circuits. Solar photovoltaic (PV) facilities are particularly susceptible to EMP since PV systems are outdoors and exposed to EMP radiation. To assess and mitigate this threat, this paper summarizes various models and tests used to study the effects of EMP on PV systems, assesses the nature of the threat, and identifies measures to mitigate it. The paper provides a comprehensive review by categorizing analytical methods based on their pros and cons, introducing and describing EMP-related events, and providing a taxonomy of analytical methods for studying EMP. This paper compares the processes of modeling, testing, and mitigating EMP at both the component and system levels of PV systems. Furthermore, it also presents a case study that reveals the vulnerability of solar inverters to EMP using the pulse current injection method. Finally, the paper discusses some of the remaining challenges that should be considered in future solar PV system design and deployment.

14 SOLAR ENERGY↗
DOE OSTI2021

Single-layered organic photovoltaics with double cascading charge transport pathways: 18% efficiencies

The chemical structure of donors and acceptors limit the power conversion efficiencies achievable with active layers of binary donor-acceptor mixtures. Here, using quaternary blends, double cascading energy level alignment in bulk heterojunction organic photovoltaic active layers are realized, enabling efficient carrier splitting and transport. Numerous avenues to optimize light absorption, carrier transport, and charge-transfer state energy levels are opened by the chemical constitution of the components. Record-breaking PCEs of 18.07% are achieved where, by electronic structure and morphology optimization, simultaneous improvements of the open-circuit voltage, short-circuit current and fill factor occur. The donor and acceptor chemical structures afford control over electronic structure and charge-transfer state energy levels, enabling manipulation of hole-transfer rates, carrier transport, and non-radiative recombination losses.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Enhancing exciton diffusion by reducing energy disorder in organic solar cells

A highly crystalline, highly emissive, and wide-bandgap polymer AC174 with an extremely small Stokes shift is designed and synthesized in water, and is used to reduce system energetic disorder and increase the exciton diffusion length of the classical PM6:Y6 blend system. AC174 is incompatible with PM6 and Y6, improves molecular packing, and reduces system energetic disorder. The long-range Förster resonance energy transfer between the donor and acceptor is enhanced, and the exciton diffusion constant and exciton lifetime are increased, leading to a longer exciton diffusion length and more efficient exciton dissociation and charge generation. The addition of AC174 simultaneously improves the open-circuit voltage, short-circuit current density (J SC ) and fill factor of PM6:Y6 devices; especially the highest internal quantum efficiency approaches 100%, and the highest J SC is 28.4 mA cm –2 . Ternary devices with 5% AC174 in the donors achieve a power conversion efficiency of 17.2%, higher than those of the parent binary devices based on PM6:Y6 (15.9%) and AC174:Y6 (3.24%).

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

A Lyapunov-Based Generalized Dc-Side Controller Design for PV-Connected Systems

The objective of this paper is to realize a universal dc-side controller for photovoltaic (PV) systems where the control is agnostic to the downstream converter configuration. To achieve this, the downstream power converter and its controls are manipulated into an effective power control loop that is then cast into a generalized multi-loop design framework. On the dc side, a nonlinear small-signal model of the PV input is realized exclusively in terms of PV datasheet parameters (i.e., open-circuit voltage, short-circuit current, and maximum power point). Finally, a linear controller is used to modulate the dc-side PV system with the generic downstream power controller. A Lyapunov candidate is proposed to analyze the stability of the interconnected system and provide a streamlined approach for the controller design. The proposed design is validated on a 1k VA experimental setup that interfaces a PV module to the grid.

generalized PV controller↗
DOE OSTI2025

Top-Performing Photovoltaic Cells Compared to the Shockley–Queisser Limit

Top-performing single-junction and two-terminal tandem devices that include at least one polycrystalline cell are compared with each other and their ideal limits. The parameters of open-circuit voltage, short-circuit current, and fill-factor are individually compared to the Shockley–Queisser limit to investigate where different technologies have room to improve. Technologies, such as silicon and cadmium telluride have the most room for improvement in open-circuit voltage currently utilizing 87% and 81% of their maxima, respectively. Detailed diode and fill-factor loss analysis is presented for single-junction devices to give further insight on how they compare and where efficiency is lost. Single-crystal technologies demonstrate a fill-factor closer to the Shockley–Queisser limit than polycrystalline devices. The high diode quality factor of polycrystalline devices is the leading cause of the decreased fill-factor. Similar analysis on tandem cells with at least one thin-film cell shows that although their efficiency exceeds that of the single-junction cells, the fraction of their ideal efficiency is smaller. Here, by comparing parameters to the Shockley–Queisser limit, it becomes clearer where certain technologies have the potential for improvement.

High efficiency↗
DOE OSTI2023

Reliability Improvement by Fault-Tolerant Operation of NPC Inverter for Motor Driving

The high-reliability operation of three-level inverters is crucial to prevent equipment damage, process downtime, and economic losses. This article investigates a three-level neutral-point-clamped inverter under all possible combinations of open-circuit and short-circuit faults and proposes a new postfault operation method without adding extra hardware. This method provides comprehensive solution for operations after single and multiple-device failures, increasing the inverter reliability by 24%. This article classified postfault modulations and uncovered previously unknown fault scenarios that can be addressed using the proposed control method. A new postfault modulation based on space vector modulation with virtual vectors is proposed. The feasibility of the proposed control method is verified by simulation and an experiment for one fault scenario in a three-level neutral-point-clamped inverter with a 3.73 kW motor load. Furthermore, this article contributes to improving the reliability of three-level inverters.

42 ENGINEERING↗
DOE OSTI2022

Editors’ Choice—Methods—Pressure Control Apparatus for Lithium Metal Batteries

Lithium (Li) metal anodes are essential for developing next-generation high-energy-density batteries. However, Li dendrite/whisker formation caused short-circuiting issue and short cycle life have prevented lithium metal from being viably used in rechargeable batteries. Numerous works have been done to study how to regulate the Li growth in electrochemical cycling by using external stacking forces. While it is widely agreed that stack pressure positively affects the lithium plating/stripping process, the optimized pressure range provided by different works varies greatly because of the difference in the pressure control setup. In this work, a pressure control apparatus is designed for Li metal batteries with liquid and solid-state electrolytes (SSE). With considerations of minimizing cell to cell variation, a reusable split cell and pressure load cell are made for testing electrochemical cells with high precision pressure control. The capability of the designed setup is demonstrated by studying the pressure effect on the Li plating/stripping process.

25 ENERGY STORAGE↗