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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
NASA NTRS2016

Integrated Broadband Quantum Cascade Laser

A broadband, integrated quantum cascade laser is disclosed, comprising ridge waveguide quantum cascade lasers formed by applying standard semiconductor process techniques to a monolithic structure of alternating layers of claddings and active region layers. The resulting ridge waveguide quantum cascade lasers may be individually controlled by independent voltage potentials, resulting in control of the overall spectrum of the integrated quantum cascade laser source. Other embodiments are described and claimed.

Mansour, Kamjou↗
NASA NTRS1995

Radiation Effects in Photonic Modulator Structures

%T Radiation Effects in Photonic Modulator Structures%A Charles Barnes%A Roger Greenwell%J SPIE, Photonics for Space Environments%C Orlando, Florida, U.S.A.%D April 18-20, 1995%K Radiation%K Photonic Modulator Structures%U http://techreports.jpl.nasa.gov/1995/95-1057.pdfA review is given of the effects of radiation on various photonic modulator materials and devices including polymer-based structures, insulator-based devices, semiconductor-based devices and spatial light modulators. We conclude by providing recommendations for further work in the area of radiation effects in photonic modulators.!

Photonic↗
NASA NTRS1979

InP and GaAs characterization with variable stoichiometry obtained by molecular spray

Both InP and GaAs surfaces were studied in parallel. A molecular spray technique was used to obtain two semiconductor surfaces with different superficial compositions. The structures of these surfaces were examined by electron diffraction. Electron energy loss was measured spectroscopically in order to determine surface electrical characteristics. The results are used to support conclusions relative to the role of surface composition in establishing a Schottky barrier effect in semiconductor devices.

Massies, J.↗
NASA NTRS1995

Improved Growth Of Cadmium Telluride Crystals Fro m Vapors

Effusive ampoule physical vapor transport (EAPVT) improved technique for growing high-quality crystals from vapors. Apparatus includes infrared-reflective viewing port for optical in situ monitoring of structure of growing crystal, enabling efficient determination of optimal thermal and transport operating conditions. Used commercially for efficiently growing various semiconductor compounds in form of single crystals of high structural and compositional uniformity.

Rosenberger, Franz↗
NASA NTRS1978

Effects of ultrathin oxides in conducting MIS structures on GaAs

Schottky barrier-type GaAs baseline devices (semiconductor surface etched and then immediately metalized) and GaAs conducting metal oxide-semiconductor devices are fabricated and characterized. The baseline surfaces (no purposeful oxide) are prepared by a basic or an acidic etch, while the surface for the MIS devices are prepared by oxidizing after the etch step. The metallizations used are thin-film Au, Ag, Pd, and Al. It is shown that the introduction of purposeful oxide into these Schottky barrier-type structures examined on n-type GaAs modifies the barrier formation, and that thin interfacial layers can modify barrier formation through trapping and perhaps chemical reactions. For Au- and Pd-devices, enhanced photovoltaic performance of the MIS configuration is due to increased barrier height.

Childs, R. B.↗
NASA NTRS1978

Complementary DMOS-VMOS integrated circuit structure

A high speed CMOS formed on a single semiconductor substrate includes a DMOS having an asymmetric channel and a VMOS with a relatively short channel length. The short channel length of the VMOS is achieved by forming a double diffusion along one edge of a V groove, or ion implanting boron into the apex of the V groove and diffusing a single layer to a relatively deep depth along both edges of the groove.

Jhabvala, M. O.↗
NASA NTRS1998

Carbon Nanotube Based Molecular Electronics

Carbon nanotubes and the nanotube heterojunctions have recently emerged as excellent candidates for nanoscale molecular electronic device components. Experimental measurements on the conductivity, rectifying behavior and conductivity-chirality correlation have also been made. While quasi-one dimensional simple heterojunctions between nanotubes with different electronic behavior can be generated by introduction of a pair of heptagon-pentagon defects in an otherwise all hexagon graphene sheet. Other complex 3- and 4-point junctions may require other mechanisms. Structural stability as well as local electronic density of states of various nanotube junctions are investigated using a generalized tight-binding molecular dynamics (GDBMD) scheme that incorporates non-orthogonality of the orbitals. The junctions investigated include straight and small angle heterojunctions of various chiralities and diameters; as well as more complex 'T' and 'Y' junctions which do not always obey the usual pentagon-heptagon pair rule. The study of local density of states (LDOS) reveal many interesting features, most prominent among them being the defect-induced states in the gap. The proposed three and four pointjunctions are one of the smallest possible tunnel junctions made entirely of carbon atoms. Furthermore the electronic behavior of the nanotube based device components can be taylored by doping with group III-V elements such as B and N, and BN nanotubes as a wide band gap semiconductor has also been realized in experiments. Structural properties of heteroatomic nanotubes comprising C, B and N will be discussed.

Srivastava, Deepak↗
NASA NTRS1993

Micro-opto-mechanical devices and systems using epitaxial lift off

The integration of high quality, single crystal thin film gallium arsenide (GaAs) and indium phosphide (InP) based photonic and electronic materials and devices with host microstructures fabricated from materials such as silicon (Si), glass, and polymers will enable the fabrication of the next generation of micro-opto-mechanical systems (MOMS) and optoelectronic integrated circuits. Thin film semiconductor devices deposited onto arbitrary host substrates and structures create hybrid (more than one material) near-monolithic integrated systems which can be interconnected electrically using standard inexpensive microfabrication techniques such as vacuum metallization and photolithography. These integrated systems take advantage of the optical and electronic properties of compound semiconductor devices while still using host substrate materials such as silicon, polysilicon, glass and polymers in the microstructures. This type of materials optimization for specific tasks creates higher performance systems than those systems which must use trade-offs in device performance to integrate all of the function in a single material system. The low weight of these thin film devices also makes them attractive for integration with micromechanical devices which may have difficulty supporting and translating the full weight of a standard device. These thin film devices and integrated systems will be attractive for applications, however, only when the development of low cost, high yield fabrication and integration techniques makes their use economically feasible. In this paper, we discuss methods for alignment, selective deposition, and interconnection of thin film epitaxial GaAs and InP based devices onto host substrates and host microstructures.

Camperi-Ginestet, C.↗
NASA NTRS2015

Body of Knowledge (BOK) for Copper Wire Bonds

Copper wire bonds have replaced gold wire bonds in the majority of commercial semiconductor devices for the latest technology nodes. Although economics has been the driving mechanism to lower semiconductor packaging costs for a savings of about 20% by replacing gold wire bonds with copper, copper also has materials property advantages over gold. When compared to gold, copper has approximately: 25% lower electrical resistivity, 30% higher thermal conductivity, 75% higher tensile strength and 45% higher modulus of elasticity. Copper wire bonds on aluminum bond pads are also more mechanically robust over time and elevated temperature due to the slower intermetallic formation rate - approximately 1/100th that of the gold to aluminum intermetallic formation rate. However, there are significant tradeoffs with copper wire bonding - copper has twice the hardness of gold which results in a narrower bonding manufacturing process window and requires that the semiconductor companies design more mechanically rigid bonding pads to prevent cratering to both the bond pad and underlying chip structure. Furthermore, copper is significantly more prone to corrosion issues. The semiconductor packaging industry has responded to this corrosion concern by creating a palladium coated copper bonding wire, which is more corrosion resistant than pure copper bonding wire. Also, the selection of the device molding compound is critical because use of environmentally friendly green compounds can result in internal CTE (Coefficient of Thermal Expansion) mismatches with the copper wire bonds that can eventually lead to device failures during thermal cycling. Despite the difficult problems associated with the changeover to copper bonding wire, there are billions of copper wire bonded devices delivered annually to customers. It is noteworthy that Texas Instruments announced in October of 2014 that they are shipping microcircuits containing copper wire bonds for safety critical automotive applications. An evaluation of copper wire bond technology for applicability to spaceflight hardware may be warranted along with concurrently compiling a comprehensive understanding of the failure mechanisms involved with copper wire bonded semiconductor devices.

Body of Knowledge (BOK)↗
NASA NTRS1968

Photoemission and band structure.

Relationship between photoemission and band structure of solids, giving illustrations for various semiconductor materials and metals

Spicer, W. E.↗
NASA NTRS1989

Alternating-Gradient Photodetector For Far Infrared

Proposed detector of photons of wavelengths in range of 30 to 200 micrometer made of alternating layers of lightly and heavily negatively doped germanium. Formed in sequence by conventional chemical-vapor deposition. Alternating-gradient structure enhances collection of photogenerated charge carriers while suppressing dark current, thus achieving high detectivity. Alternating layers of n+ and n- germanium provides high detectivity in far-infrared spectral region. Also possible to make similar structures with positive doping and with other semiconductors as silicon or gallium arsenide to obtain various spectral response.

Overhauser, Albert W.↗
NASA NTRS2005

Demonstration of the First 4H-SiC EUV Detector with Large Detection Area

Ultraviolet (UV) and Extreme Ultraviolet (EUV) detectors are very attractive in astronomy, photolithography and biochemical applications. For EUV applications, most of the semiconductor detectors based on PN or PIN structures suffer from the very short penetration depth. Most of the carries are absorbed at the surface and recombined there due to the high surface recombination before reach the depletion region, resulting very low quantum efficiency. On the other hand, for Schottky structures, the active region starts from the surface and carriers generated from the surface can be efficiently collected. 4H-Sic has a bandgap of 3.26eV and is immune to visible light background noise. Also, 4H-Sic detectors usually have very good radiation hardness and very low noise, which is very important for space applications where the signal is very weak. The E W photodiodes presented in this paper are based on Schottky structures. Platinum (Pt) and Nickel (Ni) are selected as the Schottky contact metals, which have the highest electron work functions (5.65eV and 5.15eV, respectively) among all the known metals on 4H-Sic.

Xin, Xiaobin↗
NASA NTRS2013

High Efficiency Thermoelectric Materials and Devices

Growth of thermoelectric materials in the form of quantum well super-lattices on three-dimensionally structured substrates provide the means to achieve high conversion efficiency of the thermoelectric module combined with inexpensiveness of fabrication and compatibility with large scale production. Thermoelectric devices utilizing thermoelectric materials in the form of quantum well semiconductor super-lattices grown on three-dimensionally structured substrates provide improved thermoelectric characteristics that can be used for power generation, cooling and other applications..

Kochergin, Vladimir↗
NASA NTRS2012

Indium Tin Oxide Resistor-Based Nitric Oxide Microsensors

A sensitive resistor-based NO microsensor, with a wide detection range and a low detection limit, has been developed. Semiconductor microfabrication techniques were used to create a sensor that has a simple, robust structure with a sensing area of 1.10 ~ 0.99 mm. A Pt interdigitated structure was used for the electrodes to maximize the sensor signal output. N-type semiconductor indium tin oxide (ITO) thin film was sputter-deposited as a sensing material on the electrode surface, and between the electrode fingers. Alumina substrate (250 m in thickness) was sequentially used for sensor fabrication. The resulting sensor was tested by applying a voltage across the two electrodes and measuring the resulting current. The sensor was tested at different concentrations of NO-containing gas at a range of temperatures. Preliminary results showed that the sensor had a relatively high sensitivity to NO at 450 C and 1 V. NO concentrations from ppm to ppb ranges were detected with the low limit of near 159 ppb. Lower NO concentrations are being tested. Two sensing mechanisms were involved in the NO gas detection at ppm level: adsorption and oxidation reactions, whereas at ppb level of NO, only one sensing mechanism of adsorption was involved. The NO microsensor has the advantages of high sensitivity, small size, simple batch fabrication, high sensor yield, low cost, and low power consumption due to its microsize. The resistor-based thin-film sensor is meant for detection of low concentrations of NO gas, mainly in the ppb or lower range, and is being developed concurrently with other sensor technology for multispecies detection. This development demonstrates that ITO is a sensitive sensing material for NO detection. It also provides crucial information for future selection of nanostructured and nanosized NO sensing materials, which are expected to be more sensitive and to consume less power.

Xu, Jennifer C.↗
NASA NTRS2005

Beamline Electrostatic Levitator (BESL) for in-situ High Energy K-Ray Diffraction Studies of Levitated Solids and Liquids at High Temperature

Determinations of the phase formation sequence, the crystal structures and the thermodynamic properties of materials at high temperatures are difficult because of contamination from the sample container and environment. Containerless processing techniques, such as electrostatic (ESL), electromagnetic (EML), aerodynamic, and acoustic levitation, are most suitable these studies. An adaptation of ESL for in-situ structural studies of a wide range of materials, including metals, semiconductors, insulators using high energy (125 keV) synchrotron x-rays is described here. This beamline ESL (BESL) allows the in-situ determination of the atomic structures of equilibrium solid and liquid phases, including undercooled liquids, as well as real-time studies of solid-solid and liquid-solid phase transformations. The use of image plate (MAR345) or GE-Angio detectors enables fast (30 ms - 1s) acquisition of complete diffraction patterns over a wide q-range (4 - 140/mm). The wide temperature range (300 - 2500 K), containerless processing under high vacuum (10(exp -7) - 10(exp -8) torr), and fast data acquisition, make BESL particularly suitable for phase diagram studies of high temperature materials. An additional, critically important, feature of BESL is the ability to also make simultaneous measurement of a host of thermo-physical properties, including the specific heat, enthalpy of transformation, solidus and liquidus temperatures, density, viscosity, and surface tension; all on the same sample and simultaneous with the structural measurements.

Gangopadhyay, A. K.↗