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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Magnetic order and physical properties of the kagome metal UNb 6 ⁢Sn 6

The 𝑅⁢𝑀 6 ⁢𝑋 6 family of materials (𝑅 = rare-earth, 𝑀 = transition metal, 𝑋 = Ga, Si, Ge, Sn) produces an array of emergent phenomena, such as charge density waves, intrinsic Hall effects, and complex magnetic order, due to its kagome net of transition metal atoms, its local-moment magnetic anisotropies, and its extensive chemical tunability. Here, in this study, we report UNb 6⁢ Sn 6 , a new “166” material containing both an actinide and a 4⁢𝑑 transition metal, along with its nonmagnetic analog ThNb6⁢Sn6, to investigate the properties of a 5⁢𝑓−4⁢𝑑 electron 166 system. UNb 6 ⁢Sn 6 crystallizes in the hexagonal 𝑃⁢6/𝑚⁢𝑚⁢𝑚 space group with a small degree of disorder due to shifts in the size of the CoSn-like cages along the 𝑐 axis. Upon cooling at zero magnetic field, the material undergoes two magnetic phase transitions at 𝑇 2 = 46K and 𝑇 N = 43K. The low-temperature, zero-field phase is an antiferromagnet with ordered uranium moments and a k = (0,0,1/2) propagation vector determined by neutron diffraction. Remarkably, with a magnetic field applied along the 𝑐 axis, five additional magnetic transitions occur, evidenced by magnetization and resistivity data, before the moment saturates at 2.62 𝜇 B /U at 2 K and ≥ 13.6T. In two magnetic phase regions, the Hall resistivity of UNb 6⁢ Sn 6 significantly deviates from the magnetization, suggesting that the phases have a large Berry curvature or a change in the Fermi surface. The unknown magnetic ordering of the field-dependent phases of UNb 6⁢ Sn 6 demonstrates the complexity of the 5⁢𝑓−4⁢𝑑 166 system and encourages further study of its properties.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Observation of room-temperature charge density wave correlations via coherent phonon spectroscopy in the Sn-doped kagome superconductor CsV 3 ⁢Sb 5

In this study, we perform ultrafast time-resolved reflectivity measurements to track the evolution of charge density wave (CDW) correlations in Sn-doped Kagome superconductor CsV 3⁢ Sb 5−𝑥 ⁢Sn 𝑥 . By extracting the coherent phonon spectrum, we evidence robust signatures of CDW correlations at temperature and doping ranges far beyond the phase boundary of long-range CDW order. Remarkably, we show that short-range CDW correlations survive up to room temperature in 𝑥 = 0.32 Sn-doped CsV 3 ⁢Sb 5 , supported by synchrotron x-ray diffraction measurements. We point out that the introduction of quenched disorder by Sn doping can pin the CDW and form static short-range CDW, which can explain the observed persistent CDW signatures. Our results thus corroborate the ubiquity and robustness of CDW correlations in Sn-doped CsV 3⁢ Sb 5 and provide new insights on the role of disorders on the CDW correlations in AV 3 ⁢Sb 5 family.

Charge density waves↗
DOE OSTI2025

Electrical transport and torque magnetometry studies of the kagome compound LuV 6 ⁢Sn 6 under high magnetic fields

We present a comprehensive investigation of the kagome metal LuV 6 ⁢Sn 6 through magnetotransport and torque magnetometry studies in magnetic fields up to 41 T and temperatures as low as 0.3 K. Magnetoresistance measurements up to 31 T reveal clear Shubnikov–de Haas (SdH) oscillations with two dominant frequency peaks: 𝐹 𝛼 =12 T and 𝐹 𝛽 =155 T. The Berry phase Φ 𝐁 , calculated from Landau level fan diagrams, indicates a nontrivial topology for both the 𝛼- and 𝛽-orbits. To explore the possibility of higher-frequency signals in LuV 6 ⁢Sn 6 , we employed another technique: torque magnetometry. Torque measured with applied fields up to 41 T reveals clear de Haas–van Alphen (dHvA) oscillations, with frequency signals as high as 10 kT. Angular and temperature-dependent quantum oscillation measurements allowed us to extract the effective mass of charge carriers and map the Fermi surface of LuV 6 ⁢Sn 6 . To complement the experimental findings, we performed electronic band structure and Fermi surface calculations. The electronic bands of LuV 6 ⁢Sn 6 reveal intriguing features, including flat bands, van Hove singularities, and Dirac points near the Fermi level. Two bands cross the Fermi level, contributing a deformed cylindrical shape at the Γ-point and small chainlike Fermi surfaces near the Brillouin zone boundaries. Theoretical quantum oscillation frequencies derived from Fermi surface cross-sectional areas align well with experimental SdH and dHvA results. These combined experimental and theoretical insights provide a deeper understanding of the electronic structure of LuV 6 ⁢Sn 6 and establish the foundation for exploring electronic properties in other vanadium- and titanium-based kagome systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Bayesian inference of nuclear symmetry energy from measured and imagined neutron skin thickness in Sn 116 , 118 , 120 , 122 , 124 , 130 , 132 , Pb 208 , and Ca 48

The neutron skin thickness Δr np in heavy nuclei has been known as one of the most sensitive terrestrial probes of the nuclear symmetry energy E sym (ρ) around $\frac{2}{3}$ of the saturation density ρ 0 of nuclear matter. Existing neutron skin data mostly from hadronic observables suffer from large uncertainties and their extraction from experiments are often strongly model dependent. While waiting eagerly for the promised model-independent and high-precision neutron skin data for 208 Pb and 48 Ca from the parity-violating electron scattering experiments (PREX-II and CREX at JLab as well as MREX at MESA), within the Bayesian statistical framework using the Skyrme-Hartree-Fock model we infer the posterior probability distribution functions (PDFs) of the slope parameter L of the nuclear symmetry energy at ρ 0 from imagined Δr np ( 208 Pb)=0.15, 0.20, and 0.30 fm with a 1σ error bar of 0.02, 0.04, and 0.06 fm, respectively, as well as Δr np ( 48 Ca)=0.12, 0.15, and 0.25 fm, with different 1σ error bar of 0.01 and 0.02 fm, respectively. The results are compared with the PDFs of L inferred using the same approach from the available Δr np data for 116, 118, 120, 122, 124, 130, 132 Sn from hadronic probes. They are also compared with results from a recent Bayesian analysis of the radius and tidal deformability data of canonical neutron stars from GW170817 and NICER. The neutron skin data for Sn isotopes gives L = 45.5 $^{+ 26.5}_{-21.6}$ MeV surrounding its mean value or L = 53 . 4 $^{+ 18.6}_{ -29.5}$ MeV surrounding its maximum a posteriori value, respectively, with the latter smaller than but consistent with the L = 66 $^{+ 12}_{-20}$ MeV from the neutron star data within their 68% confidence intervals. We found that Δr np = 0.17 –0.18 fm in 208 Pb with an error bar of about 0.02 fm leads to a PDF of L compatible with that from analyzing the Sn data. To provide additionally useful information on L extracted from the Δr np of Sn isotopes, the experimental error bar of Δr np in 208 Pb should be at least smaller than 0.06 fm aimed by some current experiments. In addition, the Δr np ( 48 Ca) needs to be larger than 0.15 fm but smaller than 0.25 fm to be compatible with the Sn and/or neutron star results. To further improve our current knowledge about L and distinguish its PDFs in the examples considered, even higher precisions leading to significantly less than ±20 MeV error bars for L at 68% confidence level are necessary.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2021

Effective shell-model interaction for nuclei “southeast” of 100 Sn

We construct an effective shell-model interaction for the valence space spanned by single-particle neutron and single-hole proton states in 100 Sn. Starting from chiral nucleon-nucleon and three-nucleon forces and single-reference coupled-cluster theory for 100 Sn we apply a second similarity transformation that decouples the valence space. The particle-particle components of the resulting effective interaction can be used in shell model calculations for neutron deficient tin isotopes. The hole-hole interaction can be used to calculate the N=50 isotones south of 100 Sn, and the full particle-hole interaction describes nuclei in the region southeast of 100 Sn. We compute low-lying excited states in selected nuclei southeast of 100 Sn, and find reasonable agreement with data. The presented techniques can also be applied to construct effective shell-model interactions for other regions of the nuclear chart.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2024

Growth and characterization of α-Sn thin films on In- and Sb-rich reconstructions of InSb(001)

α-Sn thin films can exhibit a variety of topologically nontrivial phases. Both studying the transitions between these phases and making use of these phases in eventual applications requires good control over the electronic and structural quality of α-Sn thin films. α-Sn growth on InSb often results in out-diffusion of indium, a p-type dopant. By growing α-Sn via molecular beam epitaxy on the Sb-rich c(4×4) surface reconstruction of InSb(001) rather than the In-rich c(8×2), we demonstrate a route to substantially decrease and minimize this indium incorporation. The reduction in indium concentration allows for the study of the surface and bulk Dirac nodes in α-Sn via angle-resolved photoelectron spectroscopy without the common approaches of bulk doping or surface dosing, simplifying topological phase identification. In this study, the lack of indium incorporation is verified in angle-resolved and angle-integrated ultraviolet photoelectron spectroscopy as well as in clear changes in the Hall response.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Influence of Nb alloying on Nb recrystallization and the upper critical field of Nb 3 ⁢Sn

Nb 3 Sn conductors are important candidates for high-field magnets for particle accelerators, and they continue to be widely used for many laboratory and NMR magnets. However, the critical current density, J c , of present Nb 3 Sn conductors declines swiftly above 12-15 T. State-of-the-art Ta- and Ti-doped strands exhibit upper critical field, H c2 , values of ~ 24-26.5 T (4.2 K) and do not reach the FCC target J c , which serves as the present stretch target for Nb 3 Sn development. As recently demonstrated, to meet this goal requires enhanced vortex pinning but an independent and supplementary approach is to significantly enhance H c2 . In this study, we have arc-melted multiple Nb alloys with added Hf, Zr, Ta and Ti and drawn them successfully into monofilament wires to investigate the possibilities of H c2 enhancement through alloying. H c2 (T) was measured for all samples in fields up to 16 T and some up to 31 T. We have found that all alloys show good agreement with the standard Werthamer, Helfand, and Hohenberg (WHH) fitting procedure without the need to adjust the paramagnetic limitation parameter (α) and spin-orbit scattering parameter (λ so ). The evaluation of dH c2 /dT near T c , which is proportional to the electronic specific heat coefficient γ and the normal state resistivity ρn, allows a better understanding of the induced disorder introduced by alloying in the A15 phase. So far, we have observed that Hf alloying of pure Nb can enhance H c2 (0) by 3-4 T to ~28 T, while adding just 1 at. %Hf or Zr into a Nb4Ta base alloy can raise H c2 (0) to ~31 T. Very importantly we find that Hf and Zr raise the alloy recrystallization temperature above the usual A15 reaction temperature range of 650°C – 750°C, thus ensuring denser A15 phase nucleation in the Nb alloy grain boundaries, possibly leading to a more homogeneous A15 phase Sn content and refined A15 grain size. Furthermore, the potential for further advancements in Nb 3 Sn properties is explored in relation to the recrystallization of the Nb alloy and the factors controlling the upper critical field.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Molecular beam epitaxy and crystal structure of majority a -plane-oriented and substrate-strained Mn 3 Sn thin films grown directly on sapphire (0001)

The Kagome antiferromagnet Mn 3 Sn has garnered much attention due to the presence of exciting properties such as anomalous Hall and Nernst effects. This paper discusses the synthesis of crystalline Mn 3 Sn thin films, prepared on Al 2 O 3 (0001) substrates at 453 ± 5°C using molecular beam epitaxy. The growth is monitored in situ using reflection high energy electron diffraction and measured ex situ using x-ray diffraction, Rutherford back-scattering, and cross-sectional scanning transmission electron microscopy. Our analysis shows the in-plane lattice constants of a 1,M = 4.117 ± 0.027 Å and a 2,M = 4.943 ± 0.033 Å, which is a very unexpected result when compared to the bulk a-plane Mn 3 Sn. This indicates a strain in the film and makes it challenging to provide a straightforward explanation. In an effort to explain our results, we discuss two possible orientation relationships between the Mn 3 Sn films and the sapphire substrates. Samples prepared under these conditions appear to have smooth surfaces locally, but overall the film has a 3D island morphology. First-principles calculations provide atomic models of the Mn 3 Sn (112¯0) lattice on Al 2 O 3 (0001) high symmetry sites, indicating that the L3-R90° is the most stable configuration. A detailed discussion of the experimental data and theoretical results, as well as strain effects, is provided.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Pathway to tune sputter coated Nb$_3$Sn with Zr

Superconducting radio frequency (SRF) cavities are essential elements of many modern-day particle accelerators such as, European XFEL (DESY), LCLS II-HE (SLAC) and PIP II (Fermilab). Nb$_3$Sn superconducting material promises significant potential to exceed the performance of conventional niobium based SRF cavities. We aim to advance the ongoing R$&$D efforts to achieve Nb$_3$Sn coated cavities with high material quality. In this work, we have developed to achieve a route for effectively reducing the intrinsic defects in magnetron sputter coated Nb$_3$Sn SRF cavities and eventually improve the overall RF performance. We have observed that Zr is mainly being incorporated as ZrO$_2$ precipitates of average dimensions ranging from 20-100nm. By increasing the concentration of Zr, we have three major effects in the physical properties. Firstly, we noted that the density of the surface and bulk voids as well as their average dimensions are dramatically reduced on increasing the Zr content in Nb$_3$Sn. These surface voids are believed to be detrimental to cavity applications due to increase the local dissipation of electric and magnetic fields. These results indicate that inclusion of Zr in Nb$_3$Sn sputtered coating will improve the material quality and might help to reduce the overall RF power dissipation. Secondly, we observed that increasing Zr concentration from 0 to 2.4% substantially improves both superconducting transition temperature (Tc) and upper critical magnetic field (Hc2). However, on further increasing the Zr concentration to 24%, we noticed a small decrement in the Hc2 value. These results infer that the increase in Zr concentration up to an optimal concentration will be beneficial to enhance the superconducting properties. Increase in Tc promises lesser RF losses and improvement in accelerating gradient, whereas the increase in Hc2 suggests more efficient flux pinning which could give rise to high quality factors in presence of multi-Tesla magnetic field. Additionally, we also observed that increasing Zr concentration possibly prevents the oxygen diffusion and leads to thinner formation of primary surface oxide (Nb$_2$O$_5$ and SnO). This study gives a route to tune Zr fraction in Nb3Sn to modify the physical properties that control the high field performance of Nb3Sn RF cavities.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2023

A high-capacity Sn metal anode for aqueous acidic batteries

Aqueous acidic batteries as a good choice to respond battery diversity, delivering safety, cost, environmental friendliness and high-power necessary for renewable energy storage. However, the practical adoption is greatly challenged by low-voltage and energy density due to the inadequate metal anode materials. Here we report an interfacial regulated Sn metal anode as the solution of the last piece of the puzzle. In this study, the ease of recycling, low potential, fast redox kinetics, and high capacity of Sn perfectly fit the battery system, and the Sn metal shedding critical issue is successfully suppressed by promoting uniform deposition for added interaction from alloying. Consequently, this reversible Sn anode with 442 mAh g -1 matches well to different types of cathodes. The as-assembled acidic batteries also demonstrate sufficient output voltage (up to 1.7 V), energy density (up to 312 Wh kg -1 based on both electrodes), kinetics (up to 24 C) and stability (up to 2400 cycles).

25 ENERGY STORAGE↗
DOE OSTI2020

Materials Data on Sn(ClO)2 by Materials Project

SnCl2O2 crystallizes in the monoclinic P2_1/c space group. The structure is two-dimensional and consists of four hydrogen peroxide molecules and one SnCl2 sheet oriented in the (1, 0, 0) direction. In the SnCl2 sheet, Sn is bonded in a rectangular see-saw-like geometry to four Cl atoms. There are a spread of Sn–Cl bond distances ranging from 2.62–2.97 Å. There are two inequivalent Cl sites. In the first Cl site, Cl is bonded in a water-like geometry to two equivalent Sn atoms. In the second Cl site, Cl is bonded in a bent 120 degrees geometry to two equivalent Sn atoms.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Sn(CCl)2 by Materials Project

Sn(CCl)2 crystallizes in the orthorhombic Imma space group. The structure is one-dimensional and consists of two Sn(CCl)2 ribbons oriented in the (0, 1, 0) direction. Sn2+ is bonded in a tetrahedral geometry to two equivalent C and two equivalent Cl1- atoms. Both Sn–C bond lengths are 2.08 Å. Both Sn–Cl bond lengths are 2.34 Å. C is bonded in a linear geometry to one Sn2+ and one C atom. The C–C bond length is 1.23 Å. Cl1- is bonded in a single-bond geometry to one Sn2+ atom.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Sn(ClO)2 by Materials Project

SnCl2O2 crystallizes in the monoclinic P2_1/c space group. The structure is zero-dimensional and consists of four hydrogen peroxide molecules and two SnCl2 clusters. In each SnCl2 cluster, Sn is bonded in a 3-coordinate geometry to three Cl atoms. There are a spread of Sn–Cl bond distances ranging from 2.55–2.73 Å. There are two inequivalent Cl sites. In the first Cl site, Cl is bonded in a water-like geometry to two equivalent Sn atoms. In the second Cl site, Cl is bonded in a single-bond geometry to one Sn atom.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Sn(ClO)2 by Materials Project

SnCl2O2 crystallizes in the monoclinic P2_1/c space group. The structure is two-dimensional and consists of four hydrogen peroxide molecules and one SnCl2 sheet oriented in the (1, 0, 0) direction. In the SnCl2 sheet, Sn is bonded in a distorted rectangular see-saw-like geometry to four Cl atoms. There are a spread of Sn–Cl bond distances ranging from 2.61–3.02 Å. There are two inequivalent Cl sites. In the first Cl site, Cl is bonded in a water-like geometry to two equivalent Sn atoms. In the second Cl site, Cl is bonded in a water-like geometry to two equivalent Sn atoms.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Decoding the Broadband Emission of 2D Pb-Sn Halide Perovskites through High-Throughput Exploration

Unlike single-component 2D metal halide perovskites (MHPs) exhibiting sharp excitonic photoluminescence (PL), a broadband PL emerges in mixed Pb-Sn 2D lattices. Two physical models –self-trapped exciton and defect-induced Stokes-shift – are proposed to explain this unconventional phenomenon. However, the explanations provide limited rationalizations without consideration of the formidable compositional space, and thus, the fundamental origin of broadband PL remains elusive. Herein, the high-throughput automated experimental workflow is established to systematically explore the broadband PL in mixed Pb-Sn 2D MHPs, employing PEA (Phenethylammonium) as a model cation known to work as a rigid organic spacer. Spectrally, the broadband PL becomes further broadened with rapid PEA 2 PbI 4 phase segregation with increasing Pb concentrations during early-stage crystallization. Counterintuitively, MHPs with high Pb concentrations exhibit prolonged PL lifetimes. Hyperspectral microscopy identifies substantial PEA 2 PbI 4 phase segregation in those films, hypothesizing that the establishment of charge transfer excitons by the phase segregation upon crystallization at high-Pb compositions results in distinctive PL properties. In conclusion, these results indicate that two independent mechanisms—defect-induced Stoke-shifts and the establishment of charge transfer excitons by phase segregation—coexist which significantly correlates with the Pb:Sn ratio, thereby simultaneously contributing to the broadband PL emission in 2D mixed Pb-Sn HPs.

2D Pb-Sn halide perovskites↗
DOE OSTI2022

Gradient Doping in Sn–Pb Perovskites by Barium Ions for Efficient Single-Junction and Tandem Solar Cells

Narrow bandgap tin-lead (NBG Sn-Pb) perovskites generally have a high density of unintentional p-type self-doping, which reduces the charge carrier lifetimes, diffusion lengths and device efficiencies. Here, we demonstrate a p-n homojunction across the Sn-Pb perovskite resulted from a gradient doping by Ba 2+ . We report that 0.1 mol% Ba 2+ can effectively compensate the p-doping of Sn-Pb perovskites or even turns it to n-type without changing its bandgap. Ba 2+ cations are found to stay at the interstitial sites and work as shallow electron donor. In addition, Ba 2+ cations show a unique heterogeneous distribution in perovskite film. Most of the barium ions stay in the top 600 nanometer region of the perovskite films and turn it into weakly n-type, while the bottom portion of the film remains to be p-type. The gradient doping forms of a homojunction from top to bottom of the perovskite films with a built-in field that facilitates extraction of photogenerated carriers, resulting an increased carrier extraction length. Furthermore, this strategy enhanced the efficiency of Sn-Pb perovskite single-junction solar cells to over 21.0% and boosted the efficiencies of monolithic perovskite-perovskite tandem solar cells to 25.3% and 24.1%, for active areas of 5.9 mm2 and 0.94 cm 2 , respectively.

14 SOLAR ENERGY↗
DOE OSTI2024

Dynamic Behavior of Spatially Confined Sn Clusters and Its Application in Highly Efficient Sodium Storage with High Initial Coulombic Efficiency

Advanced battery electrodes require a cautious design of microscale particles with built-in nanoscale features to exploit the advantages of both micro- and nano-particles relative to their performance attributes. Herein, the dynamic behavior of nanosized Sn clusters and their host pores in carbon nanofiber) during sodiation and desodiation is revealed using a state-of-the-art 3D electron microscopic reconstruction technique. For the first time, the anomalous expansion of Sn clusters after desodiation is observed owing to the aggregation of clusters/single atoms. Pore connectivity is retained despite the anomalous expansion, suggesting inhibition of solid electrolyte interface formation in the sub-2-nm pores. Taking advantage of the built-in nanoconfinement feature, the CNF film with nanometer-sized interconnected pores hosting Sn clusters (≈2 nm) enables high utilization (95% at a high rate of 1 A g –1 ) of Sn active sites while maintaining an improved initial Coulombic efficiency of 87%. Finally, the findings provide insights into electrochemical reactions in a confined space and a guiding principle in electrode design for battery applications.

36 MATERIALS SCIENCE↗
DOE OSTI2021

First-principles studies of the concentration-dependent tritium diffusion in the zirconium hydrides with and without Sn impurity

We performed first-principles calculations to study the 3 H diffusion in the zirconium hydrides with or without Sn impurity. Our results show that the formation of Zr 3 H x becomes preferable as the 3 H concentration increases. Based on the most stable configurations of Zr 3 H x (x = 0.5, 1.0, 1.5, 2.0), we studied the interstitial 3 H diffusion with or without Sn impurity. The results show that the interstitial 3 H diffusion becomes less probable in the hydrides with a higher 3 H concentration. When introducing a substitutional Sn impurity, the diffusion barriers increase. Therefore, the substitutional Sn in the diffusion pathway hampers the 3 H diffusion in Zr hydrides.

36 MATERIALS SCIENCE↗