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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10

Low cost solar array project: Experimental process system development unit for producing semiconductor-grade silicon using silane-to-silicon process

The design, fabrication, and installation of an experimental process system development unit (EPSDU) were analyzed. Supporting research and development were performed to provide an information data base usable for the EPSDU and for technological design and economical analysis for potential scale-up of the process. Iterative economic analyses were conducted for the estimated product cost for the production of semiconductor grade silicon in a facility capable of producing 1000-MT/Yr.

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Study of the effects of impurities on the properties of silicon materials and performance of silicon solar cell

The effect of silicon film thickness on the energy conversion efficiency of a back surface field solar cell is investigated. A computer-aided design study on the dependence of efficiency peaks on the concentrations of the recombination and dopant impurities is presented. The illuminated current voltage characteristics of over 100 cell designs were obtained using the transmission line circuit model to numerically solve the Shockley Equations. Using an AM1 efficiency of 17% as a target value, it is shown that the efficiency versus thickness dependence has a broad maximum which varies less than 1% over more than three-to-one range of cell thickness from 30 to 100 microns. Optical reflecting back surface will give only a slight improvement of AM1 efficiency, about 0.7%, in this thickness range. The sensitive dependence of efficiency on patchiness across the back surface field, low high junction in thin cells is noted.

Sah, C. T.↗

Silicon by sodium reduction of silicon tetrafluoride

High purity silicon can be prepared from the reaction of Na with SiF4 to form Si and NaF. The SiF4 is obtained from inexpensive H2SiF6 by precipitation and decomposition of Na2SiF6. Concentrations of B and P are each in the 0.1 ppm wt range in the product Si, separated from NaF by aqueous leaching.

Sanjurjo, A.↗

Flat-plate solar-array project. Experimental process system development unit for producing semiconductor-grade silicon using the silane-to-silicon process

The engineering design, fabrication, assembly, operation, economic analysis, and process support R and D for an Experimental Process System Development Unit (EPSDU) are reported. About 95% of purchased equipment is received and will be reshipped to the West Coast location. The Data Collection System is completed. In the area of melting/consolidation, to the system using silicon powder transfer, melting and shotting on a pseudocontinuous basis is demonstrated. It is proposed to continue the very promising fluid bed work.

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Development of methods of producing large areas of silicon sheet by the slicing of silicon ingots using Inside-Diameter (I.D.) saws

Inside diametar wafering equipment, blades and processes were used to develop methods to produce large areas of silicon sheet. Modifications to a 16 inch STC automated saw included: programmable feed system, crystal rotating system, and STC dynatrack blade monitoring and control system. By controlling the plating operation and by grinding of the cutting edge, 16 inch ID blades with a cutting edge thickness of .22 mm can be produced. Crystal rotation mechanism was used to slice 100 mm diameter crystals with a 16 inch blade down to a thickness of .20 mm. Cutting rates with crystal rotation were generally slower than with standard plunge ID slicing techniques. Using programmed feeds and programmed rotation, maximum cutting rates were from 0.3 to 1.0 inches per minute.

Aharonyan, P.↗

Low Angle Silicon Sheet Growth. Large Area Silicon Sheet Task Low Cost Solar Array Project

The results of a program to demonstrate the feasibility of a low angle silicon ribbon growth process are described. Twenty-six experimental runs were performed. Ribbons were grown at pull rates from 5 to 68 cm/min. Ribbon lengths up to 74 cm were grown while widths varied from 5 to 25 mm. Thicknesses varied from 0.6 to 2.5 mm, with typical values of about 1 mm.

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Thermal oxidation of 3C silicon carbide single-crystal layers on silicon

Thermal oxidation of thick single-crystal 3C SiC layers on silicon substrates was studied. The oxidations were conducted in a wet O2 atmosphere at temperatures from 1000 to 1250 C for times from 0.1 to 50 h. Ellipsometry was used to determine the thickness and index of refraction of the oxide films. Auger analysis showed them to be homogeneous with near stoichiometric composition. The oxide growth followed a linear parabolic relationship with time. Activation energy of the parabolic rate constant was found to be 50 kcal/mole, while the linear rate constant was 74 kcal/mole. The latter value corresponds approximately to the energy required to break a Si-C bond. Electrical measurements show an effective density of 4-6 x 10 to the 11th per sq cm for fixed oxide charges at the oxide-carbide interface, and the dielectric strength of the oxide film is aproximately 6 x 10 to the 6th V/cm.

Fung, C. D.↗

Properties of silicon carbide fiber-reinforced silicon nitride matrix composites

The mechanical properties of NASA Lewis developed SiC/RBSN composites and their thermal and environmental stability havd been studied. The composites consist of nearly 30 vol pct of aligned 142 micron diameter chemically vapor-deposited SiC fibers in a relatively porous silicon nitride matrix. In the as-fabricated condition, the unidirectional and 2-D composites exhibited metal-like stress-strain behavior, graceful failure, and showed improved properties when compared with unreinforced matrix of comparable density. Furthermore, the measured room temperature tensile properties were relativley independent of tested volume and were unaffected by artifical notches normal to the loading direction or by thermal shocking from temperatures up to 800 C. The four-point bend strength data measured as a function of temperature to 1400 C in air showed that as-fabricated strength was maintained to 1200 C. At 1400 C, however, nearly 15 pct loss in strength was observed. Measurement of room temperature tensile strength after 100 hr exposure at temperatures to 1400 C in a nitrogen environment indicated no loss from the as-fabricated composite strength. On the other hand, after 100 hr exposure in flowing oxygen at 1200 and 1400 C, the composites showed approximately 40 pct loss from their as-fabricated ultimate tensile strength. Those exposed between 400 to 1200 C showed nearly 60 pct strength loss. Oxidation of the fiber/matrix interface as well as internal oxidation of the porous Si3N4 matrix are likely mechanisms for strength degradation. The excellent strength reproducibility, notch insensitivity, and high temperature strength of the composite makes it an ideal candidate for advanced heat engine applications provided coating or densification methods are developed to avoid internal oxidation attack.

Bhatt, Ramakrishna T.↗

Hot corrosion of silicon carbide and silicon nitride at 1000 C

The sodium sulfate hot corrosion of silicon-based ceramics at 1000 C has been extensively studied. Deposition of the sodium sulfate corrodant from combustion products is discussed in relation to sodium air impurity and sulfur fuel impurity content. Corrosion occurs by the combined processes of oxidation to form protective silica scales and dissolution of these scales to form nonprotective sodium silicates. The chemical corrosion mechanisms are presented in terms of acidic/basic dissolution of oxides in molten salts. The reactions are strongly influenced by the presence of free carbon in the ceramic. Strength reductions have been measured and are attributed to pitting in SiC and grain boundary attack in Si3N4. Initial results of burner corrosion of two ceramic matrix composites are consistent with the models developed for monolithic ceramics.

Fox, Dennis S.↗

Dynamic fatigue property of silicon carbide whisker-reinforced silicon nitride

The dynamic fatigue behavior of 30 vol pct SiC whisker-reinforced silicon nitride was determined in flexure as a function of temperature from 1100 to 1300 C in an air environment. The fatigue susceptibility parameter n decreased from 88.1 to 20.1 with increasing temperature from 1100 to 1300 C. A transition in the dynamic fatigue curve occurred at a lowest stressing rate of 2 MPa/min at a temperature of 1300 C, resulting in a considerably lower value of n = 5.8. This transition was primarily due to creep that was enhanced by a combination of high temperature and very slow deformation rate. The fatigue resistance of natural flaws at 1100 C was found to be greater than that of artificial flaws produced by indentation.

Choi, Sung R.↗

Role of interfacial carbon layer in the thermal diffusivity/conductivity of silicon carbide fiber-reinforced reaction-bonded silicon nitride matrix composites

Experiments were carried out on samples of reaction-bonded silicon nitride uniaxially reinforced by SiC monofilaments with and without a 3-micron-thick carbon-rich coating. It is found that a combination of a carbon coatings on the fibers and an interfacial gap due to the thermal expansion mismatch in the composite can significantly (by a factor of 2) lower the effective thermal diffusivity in the direction transverse to the fiber. At atmospheric pressure, gaseous conduction across the interfacial gap makes a significant contribution to the heat transfer across the interface, indicated by significantly lower values of the effective thermal diffusivity under vacuum than in nitrogen or helium at atmospheric pressure.

Bhatt, Hemanshu↗

Develop Silicone Encapsulation Systems for Terrestrial Silicon Solar Arrays

This work resulted in two basic accomplishments.The first was the identification of DOW CORNING Q1-2577 as a suitable encapsulation material for use in a cost effective encapsulation system. The second was the preparation of a silicon-acrylic cover material containing a durable ultraviolet screening agent for the protection of photo-oxidatively sensitive polymers.

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Heat Transfer from High-Temperature Surfaces to Fluids. III - Correlation of Heat-Transfer Data for Air Flowing in Silicon Carbide Tube with Rounded Entrance, Inside Diameter of 3/4 Inch, and Effective Length of 12 Inches: Correlation of Heat-Transfer Data for Air Flowing in Silicon Carbide Tube with Rounded Entrance, Inside Diameter of 3/4 Inch, and Effective Length of 12 Inches - Part 3

A heat-transfer investigation was conducted with air flowing through an electrically heated silicon carbide tube with a rounded entrance, an inside diameter of 3/4 inch, and an effective heat-transfer length of 12 inches over a range of Reynolds numbers up to 300,000 and a range of average inside-tube-wall temperature up to 2500 R. The highest corresponding local outside-tube-wall temperature was 3010 R. Correlation of the heat-transfer data using the conventional Nueselt relation wherein physical properties of the fluid were evaluated at average bulk temperature resulted in a separation of data with tube-wall-temperature level. A satisfactory correlation of the heat-transfer data was obtained, however, by the use of modified correlation parameters wherein the mass velocity G (or product of average air density and velocity evaluated at bulk temperature P(sub b)V(sub b)) in the Reynolds number was replaced by the product of average air velocity evaluated at the bulk temperature and density evaluated at either the average inside-tube-wall temperature or the average film temperature; in addition, all the physical properties of air were correspondingly evaluated at either the average inside-tube-wall temperature or the average film temperature.

Sams, Eldon W.↗

Micro-Textured Black Silicon Wick for Silicon Heat Pipe Array

Planar, semiconductor heat arrays have been previously proposed and developed; however, this design makes use of a novel, microscale black silicon wick structure that provides increased capillary pumping pressure of the internal working fluid, resulting in increased effective thermal conductivity of the device, and also enables operation of the device in any orientation with respect to the gravity vector. In a heat pipe, the efficiency of thermal transfer from the case to the working fluid is directly proportional to the surface area of the wick in contact with the fluid. Also, the primary failure mechanism for heat pipes operating within the temperature range of interest is inadequate capillary pressure for the return of fluid from the condenser to the wick. This is also what makes the operation of heat pipes orientation-sensitive. Thus, the two primary requirements for a good wick design are a large surface area and high capillary pressure. Surface area can be maximized through nanomachined surface roughening. Capillary pressure is largely driven by the working fluid and wick structure. The proposed nanostructure wick has characteristic dimensions on the order of tens of microns, which promotes menisci of very small radii. This results in the possibility of enormous pumping potential due to the inverse proportionality with radius. Wetting, which also enhances capillary pumping, can be maximized through growth of an oxide layer or material deposition (e.g. TiO2) to create a superhydrophilic surface.

Yee, Karl Y.↗

Development and Property Evaluation of Selected HfO2-Silicon and Rare Earth-Silicon Based Bond Coats and Environmental Barrier Coating Systems for SiC/SiC Ceramic Matrix Composites

Ceramic environmental barrier coatings (EBC) and SiC/SiC ceramic matrix composites (CMCs) will play a crucial role in future aircraft propulsion systems because of their ability to significantly increase engine operating temperatures, improve component durability, reduce engine weight and cooling requirements. Advanced EBC systems for SiC/SiC CMC turbine and combustor hot section components are currently being developed to meet future turbine engine emission and performance goals. One of the significant material development challenges for the high temperature CMC components is to develop prime-reliant, high strength and high temperature capable environmental barrier coating bond coat systems, since the current silicon bond coat cannot meet the advanced EBC-CMC temperature and stability requirements. In this paper, advanced NASA HfO2-Si and rare earth Si based EBC bond coat EBC systems for SiC/SiC CMC combustor and turbine airfoil applications are investigated. High temperature properties of the advanced EBC systems, including the strength, fracture toughness, creep and oxidation resistance have been studied and summarized. The advanced NASA EBC systems showed some promise to achieve 1500C temperature capability, helping enable next generation turbine engines with significantly improved engine component temperature capability and durability.

Oxidation and cyclic durability↗