Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “RADIATION DETECTOR”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Superlinearity, saturation, and the PMT—Tailoring and calibration methodology for prompt radiation detectors

This work illustrates predominant measureable nonlinearities in photomultiplier tubes (PMTs) and introduces a controllable one called “Superlinearity,” signifying both a positive nonlinear response and the ability to extend linear operation by counteracting gain saturation mechanisms — charge depletion, space-charge field limitation, and secondary emission surface effects. Recognizing superlinearity and its effect on the temporal step response leads to a true definition of linearity, free of a small-signal linear assumption. Furthermore, given the prevalent use of glass microchannel-plate (MCP) PMTs in favor of a faster impulse response in spite of a small charge limit, we are motivated to examine their nonlinear amplitude response and deploy tailored gain bias string methods to fully harness the maximum linear gain as is usually done for transmissive metal mesh and reflective metal dynode PMTs. Our characterization methodology applies standard NIST-traceable calibrated laboratory equipment with absolute input-referenced techniques, examining step responses over many orders of magnitude in controlled illumination. By doing so, we quantitatively reveal the superlinearity strength independent of charge depletion, yielding true linear responsivity and effectively doubling the small-signal linear limit; this is very relevant to PMT modeling and charge deconvolution efforts. In conclusion, with further development, the tailoring strategies we introduce could be applied to MCP detectors, extracting all useful capillary charge with a significant improvement in large linear signal quality.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2012

Silicon field-effect transistors as radiation detectors for the Sub-THz range

The nonresonance response of silicon metal-oxide-semiconductor field-effect transistors (Si-MOSFETs) with a long channel (1-20 {mu}m) to radiation in the frequency range 43-135 GHz is studied. The transistors are fabricated by the standard CMOS technology with 1-{mu}m design rules. The volt-watt sensitivity and the noise equivalent power (NEP) for such detectors are estimated with the calculated effective area of the detecting element taken into account. It is shown that such transistors can operate at room temperature as broadband direct detectors of sub-THz radiation. In the 4-5 mm range of wavelengths, the volt-watt sensitivity can be as high as tens of kV/W and the NEP can amount to 10{sup -11} - 10{sup -12}W/{radical}Hz . The parameters of detectors under study can be improved by the optimization of planar antennas.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Transient and steady-state dark current mechanisms in amorphous selenium avalanche radiation detectors

A theoretical model for describing bias-dependent transient and steady-state behaviors of dark current in amorphous selenium (a-Se) avalanche detector structures has been developed. The analytical model considers bulk thermal generation current from mid-gap sates, transient carrier depletion, and carrier injection from the electrodes incorporating avalanche multiplication. The proposed physics-based dark current model is compared with the published experimental results on three potential a-Se avalanche detector structures. The steady-state dark current is the minimum for the structures that have effective blocking layers for both holes and electrons. The transient decay time to reach a plateau decreases considerably with increasing electric field.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2012

Prompt radiation detectors to monitor target conditions

Lessons learned by basic scientists in the study of experimental nuclear physics can often go unnoticed by cyclotron operator's intent on meeting a demanding schedule of tracer production. Prompt neutrons and gammas are the signature that the desired reaction is occurring, providing a robust measure of the expected yield.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2014

Temporal and temperature evolution of electric field in CdTe:In radiation detectors

We employed measurement of the Pockels electro-optic effect to study the electric field and space charge dynamics in semi-insulating CdTe doped with indium. We performed measurements of time and temperature dependence of the electric field. The polarization due to space charge build-up decreases with increasing temperature. Increase of temperature, therefore, leads to de-polarization in CdTe:In detectors which are opposite to the CdTe:Cl samples studied to date. We have shown that the thermally activated depolarization cannot be explained by the conventional model used for the description of space charge formation so far and an alternative model involving a recombination level was suggested and successfully used.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2017

(U) Second-Order Sensitivity Analysis of Uncollided Particle Contributions to Radiation Detector Responses Using Ray-Tracing

The Second-Level Adjoint Sensitivity System (2nd-LASS) that yields the second-order sensitivities of a response of uncollided particles with respect to isotope densities, cross sections, and source emission rates is derived in Refs. 1 and 2. In Ref. 2, we solved problems for the uncollided leakage from a homogeneous sphere and a multiregion cylinder using the PARTISN multigroup discrete-ordinates code. In this memo, we derive solutions of the 2nd-LASS for the particular case when the response is a flux or partial current density computed at a single point on the boundary, and the inner products are computed using ray-tracing. Both the PARTISN approach and the ray-tracing approach are implemented in a computer code, SENSPG. The next section of this report presents the equations of the 1st- and 2nd-LASS for uncollided particles and the first- and second-order sensitivities that use the solutions of the 1st- and 2nd-LASS. Section III presents solutions of the 1st- and 2nd-LASS equations for the case of ray-tracing from a detector point. Section IV presents specific solutions of the 2nd-LASS and derives the ray-trace form of the inner products needed for second-order sensitivities. Numerical results for the total leakage from a homogeneous sphere are presented in Sec. V and for the leakage from one side of a two-region slab in Sec. VI. Section VII is a summary and conclusions.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2011

DEVELOPMENT OF CdZnTe RADIATION DETECTORS

Cadmium Zinc Telluride (CdZnTe or CZT) is a very attractive material for room-temperature semiconductor detectors because of its wide band-gap and high atomic number. Despite these advantages, CZT still presents some material limitations and poor hole mobility. In the past decade most of the developing CZT detectors focused on designing different electrode configurations, mainly to minimize the deleterious effect due to the poor hole mobility. A few different electrode geometries were designed and fabricated, such as pixelated anodes and Frisch-grid detectors developed at Brookhaven National Lab (BNL). However, crystal defects in CZT materials still limit the yield of detector-grade crystals, and, in general, dominate the detector's performance. In the past few years, our group's research extended to characterizing the CZT materials at the micro-scale, and to correlating crystal defects with the detector's performance. We built a set of unique tools for this purpose, including infrared (IR) transmission microscopy, X-ray micro-scale mapping using synchrotron light source, X-ray transmission- and reflection-topography, current deep level transient spectroscopy (I-DLTS), and photoluminescence measurements. Our most recent work on CZT detectors was directed towards detailing various crystal defects, studying the internal electrical field, and delineating the effects of thermal annealing on improving the material properties. In this paper, we report our most recent results.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2019

Time-resolved, nonequilibrium carrier and coherent acoustic phonon dynamics in (Cd, Mg)Te single crystals for radiation detectors

We present time-resolved nonequilibrium carrier and coherent acoustic phonon dynamics in (Cd, Mg)Te single crystals intended for detection of high-energy x-ray photons. Our (Cd, Mg)Te crystals were grown using a vertical Bridgman method and during the process were doped either with In (a shallow dopant) or Ge (a deep impurity). Next they were cut into platelets and, subsequently, tested as as-grown specimens, or, before testing, long-term annealed in a temperature range of 750 °C–800 °C to improve their crystalline properties. All samples exhibited high resistivities of 10 9 –10 10 Ω cm, as required for x-ray detection applications. We have performed femtosecond optical spectroscopy, pump-probe measurements on all samples in both one-color (high-intensity 800 nm pump and low-intensity 800 nm probe) and two-color (high-intensity 400 nm pump and low-intensity 800 nm probe) configurations, and analyzed the results using our carrier dynamics rate-equation model. The model allowed us to perform a comprehensive, time-resolved analysis of relaxation dynamics of photoexcited carriers and investigate the role of carrier traps present in all tested samples. Two-color measurements also allowed us to observe and analyze the propagation of acoustic coherent phonons excited by the high-energy pump pulse. We observed that the dependence of phonon mode frequency, after including a correction of the experimentally measured crystal index of refraction dependence on the probe wavelength, was dispersionless and led to the value for the sound velocity of 3367 m s –1 , which is in excellent agreement with the literature data. The intrinsic lifetime of coherent phonons in (Cd, Mg)Te was estimated to be of the order of 10 ns. Lastly, we conclude that among our tested samples, the In-doped, annealed (Cd, Mg)Te crystal exhibits the best characteristics for radiation detection applications.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2015

Post-Growth Annealing of Bridgman-grown CdZnTe and CdMnTe Crystals for Room-temperature Nuclear Radiation Detectors

Bridgman-grown cadmium zinc telluride (CdZnTe or CZT) and cadmium manganese telluride (CdMnTe or CMT) crystals often have Te inclusions that limit their performances as X-ray- and gamma-ray-detectors. We present here the results of post-growth thermal annealing aimed at reducing and eliminating Te inclusions in them. In a 2D analysis, we observed that the sizes of the Te inclusions declined to 92% during a 60-h annealing of CZT at 510 °C under Cd vapor. Further, tellurium inclusions were eliminated completely in CMT samples annealed at 570 °C in Cd vapor for 26 h, whilst their electrical resistivity fell by an order of 10 2 . During the temperature-gradient annealing of CMT at 730 °C and an 18 °C/cm temperature gradient for 18 h in a vacuum of 10 -5 mbar, we observed the diffusion of Te from the sample, causing a reduction in size of the Te inclusions. For CZT samples annealed at 700 °C in a 10 °C/cm temperature gradient, we observed the migration of Te inclusions from a low-temperature region to a high one at 0.022 μm/s. During the temperature-gradient annealing of CZT in a vacuum of 10 -5 mbar at 570 °C and 30 °C/cm for 18 h, some Te inclusions moved toward the high-temperature side of the wafer, while other inclusions of the same size, i.e., 10 µm in diameter, remained in the same position. These results show that the migration, diffusion, and reaction of Te with Cd in the matrix of CZT- and CMT-wafers are complex phenomena that depend on certain conditions.

36 MATERIALS SCIENCE↗
DOE OSTI2025

A machine learning framework for accurate and robust analysis of radiation detector pulses

The microscopic properties of atomic nuclei are used to study various scientific questions. They are essential for understanding the fundamental forces of nature and the chemical evolution of the universe. Detecting decay radiation from radioactive nuclei makes it possible to probe these fundamental nuclear properties. Detector waveform traces may contain additional information about the radiation. Generally, advanced signal processing techniques are needed to extract this additional information, often involving fitting the waveform with model response functions using non-linear least-squares optimization with second-order gradient methods. While this is a powerful technique, it is also computationally expensive, leading to slow processing time, which scales with the volume of data. To address this problem, we have developed a machine learning (ML) approach that infers the characteristics of traces from a model detector response function. In particular, we are interested in classifying whether a single recorded trace consists of one or two pulse constituents and estimating the pulse parameters. Furthermore, our proposed ML method can precisely extract the pulses’ parameters, such as energy and timing information, and accurately classify the pulse multiplicity of a trace. Unlike non-learning-based approaches, our ML approach uses neural networks that are significantly faster at inference, as they do not require any optimization during this stage.

Curve fitting↗
DOE OSTI2018

Radiation Detector Theory [PowerPoint]

The presentation is designed to give an overview of radiation detection methods likely to be encountered by RCTs and the various equipment used to make the measurements.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2018

An Effective Purification Process for the Nuclear Radiation Detector Tl 6 SeI 4

The semiconductor Tl6SeI4 was previously identified as a promising semiconductor for room temperature nuclear radiation detection. As the detection performance and carrier transport strongly depend on the concentration of impurity energy levels acting as scattering centers and carrier trapping, material purification is a crucial prerequisite step to obtain spectroscopic-grade detector performance. In this contribution, we present a highly efficient purification method using a bent ampule for evaporating Se, Tl2Se, and TlI precursors for Tl6Se4. On the basis of impurity analysis performed by glow discharge mass spectroscopy, the main impurities in Tl2Se were identified to be Pb, Bi, and Al, while in TlI the main impurities are Al and Sn. The bent-ampule method successfully reduces or removes the Cl, Pb, and Te impurities from the Se precursor, the Pb, Bi, and Al impurities from the Tl2Se precursor, and removes Sn from TU. Informed by the analysis results, density functional theory calculations were performed to study the identified impurities and related defects. The calculation results show that Bi and Al act as deep defect levels, which can be detrimental to the detector performance of Tl6SeI4. If the growth condition of Tl6SeI4 is Tl-rich/Se-poor, impurity of Si can introduce deep donors. However, it becomes electrically benign if growth conditions are Tl-poor/Se-rich, while Sn and Pb impurities are shallow donors. Centimeter-size Tl6SeI4 crystals were grown by the two-zone vertical Bridgman method using the purified precursors. The detector made of Tl6SeI4 crystal maintains the high resistivity on the order of 10(11) Omega.cm after purification, ideal for suppressing leakage current. The detector exhibits both full-energy and Tl escape photopeaks upon 122 keV gamma-ray from Co-57 radiation source. The electron mobility-lifetime product mu(e)tau(e) for TI6SeI4 detector is 8.1 X 10(-5) cm(2).V-1. On the basis of the carrier rise time measured from output pulses induced by 5.5 MeV alpha-particles from Am-241, the electron and hole mobilities were estimated to be 112 +/- 22 and 81 +/- 16 cm(2).V-1.s(-1), respectively, comparable to those of the leading detector materials HgI2 and TlBr. These results validate the potential of this compound for hard radiation detection, and the impurity analysis presented here allows future efforts to focus on reducing the concentration of the identified impurities.

Lin, Wenwen (ORCID:0000000216279558)↗
DOE OSTI2022

Charge carrier motion and effect of fixed oxide charge in a microstructured silicon radiation detector

Signal formation in a microstructured semiconductor neutron detector is more complex than in planar diode geometry. Three-dimensional microstructures are laterally smaller than the ionization cloud length, and the electric fields may be weak enough to exhibit plasma time effects. This work is the first detailed treatment of charge carrier motion in these complex semiconductor devices to replicate the time profile and signal magnitude. Simulations were performed using COMSOL Multiphysics to investigate various parameters that affect the propagation of the charge cloud. It was observed that the size of the simulated three-dimensional structure had an impact on the induced current pulse, indicating the importance of simulation geometry optimization to accurately simulate charge cloud expansion. COMSOL Multiphysics was used to replicate accurate charge creation profiles using energy deposition information imported from radiation transport codes. A detailed simulation methodology is presented to benchmark preamplifier event pulses along with complexities in modeling the charge carrier motion along the etched microstructured trenches with Si–SiO 2 boundary conditions, including fixed oxide charge and interface trapping.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Radiation Detectors for DHS Applications

Presentation to be presented during the 2021 ANS Virtual Meeting, Radiation Detection for Homeland Security Technical Session, on June 14, 2021 (https://www.ans.org/meetings/am2021/session/view-582/).

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

Low temperature process for diode termination of fully depleted high resistivity silicon radiation detectors that can be used for shallow entrance windows and thinned sensors

Fabrication of vertical diodes for radiation sensing using a low temperature microwave anneal is provided. This kind of anneal allows the back side processing to be performed after the front side processing is done without damaging the front side structures. This enables a simplified fabrication of thinned detectors compared to a conventional silicon on insulator process. Another feature that this technology enables is a thin entrance window for a detector that also serves as the doped diode termination. Such thin entrance windows are especially suitable for detection of low energy radiation.

Kenney, Christopher J.↗
NASA NTRS1972

Simple dynamic electromagnetic radiation detector

Detector monitors gamma dose rate at particular position in a radiation facility where a mixed neutron-gamma environment exists, thus determining reactor power level changes. Device also maps gamma intensity profile across a neutron-gamma beam.

Been, J. F.↗