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All sourcesNASA NTRSDOE OSTI
NASA NTRS1993

Looking for O(N) Navier-Stokes solutions on non-structured meshes

Multigrid methods are good candidates for the resolution of the system arising in numerical fluid dynamics. However, the question is to know if those algorithms which are efficient for the Poisson equation on structured meshes will still apply well to the Euler and Navier-Stokes equations on unstructured meshes. The study of elliptic problems leads us to define the conditions where a full multigrid strategy has O(N) complexity. The aim of this paper is to build a comparison between the elliptic theory and practical CFD problems. First, as an introduction, we will recall some basic definitions and theorems applied to a model problem. The goal of this section is to point out the different properties that we need to produce an FMG algorithm with O(N) complexity. Then, we will show how we can apply this theory to the fluid dynamics equations such as Euler and Navier-Stokes equations. At last, we present some results which are 2nd-order accurate and some explanations about the behavior of the FMG process.

Morano, Eric↗
NASA NTRS1993

An automatic multigrid method for the solution of sparse linear systems

An automatic version of the multigrid method for the solution of linear systems arising from the discretization of elliptic PDE's is presented. This version is based on the structure of the algebraic system solely, and does not use the original partial differential operator. Numerical experiments show that for the Poisson equation the rate of convergence of our method is equal to that of classical multigrid methods. Moreover, the method is robust in the sense that its high rate of convergence is conserved for other classes of problems: non-symmetric, hyperbolic (even with closed characteristics) and problems on non-uniform grids. No double discretization or special treatment of sub-domains (e.g. boundaries) is needed. When supplemented with a vector extrapolation method, high rates of convergence are achieved also for anisotropic and discontinuous problems and also for indefinite Helmholtz equations. A new double discretization strategy is proposed for finite and spectral element schemes and is found better than known strategies.

Shapira, Yair↗
NASA NTRS1993

A mixed method Poisson solver for three-dimensional self-gravitating astrophysical fluid dynamical systems

A key ingredient in the simulation of self-gravitating astrophysical fluid dynamical systems is the gravitational potential and its gradient. This paper focuses on the development of a mixed method multigrid solver of the Poisson equation formulated so that both the potential and the Cartesian components of its gradient are self-consistently and accurately generated. The method achieves this goal by formulating the problem as a system of four equations for the gravitational potential and the three Cartesian components of the gradient and solves them using a distributed relaxation technique combined with conventional full multigrid V-cycles. The method is described, some tests are presented, and the accuracy of the method is assessed. We also describe how the method has been incorporated into our three-dimensional hydrodynamics code and give an example of an application to the collision of two stars. We end with some remarks about the future developments of the method and some of the applications in which it will be used in astrophysics.

Duncan, Comer↗
NASA NTRS1993

Triangular spectral elements for incompressible fluid flow

We discuss the use of triangular elements in the spectral element method for direct simulation of incompressible flow. Triangles provide much greater geometric flexibility than quadrilateral elements and are better conditioned and more accurate when small angles arise. We employ a family of tensor product algorithms for triangles, allowing triangular elements to be handled with comparable arithmetic complexity to quadrilateral elements. The triangular discretizations are applied and validated on the Poisson equation. These discretizations are then applied to the incompressible Navier-Stokes equations and a laminar channel flow solution is given. These new triangular spectral elements can be combined with standard quadrilateral elements, yielding a general and flexible high order method for complex geometries in two dimensions.

Mavriplis, C.↗
NASA NTRS1994

An efficient three-dimensional Poisson solver for SIMD high-performance-computing architectures

We present an algorithm that solves the three-dimensional Poisson equation on a cylindrical grid. The technique uses a finite-difference scheme with operator splitting. This splitting maps the banded structure of the operator matrix into a two-dimensional set of tridiagonal matrices, which are then solved in parallel. Our algorithm couples FFT techniques with the well-known ADI (Alternating Direction Implicit) method for solving Elliptic PDE's, and the implementation is extremely well suited for a massively parallel environment like the SIMD architecture of the MasPar MP-1. Due to the highly recursive nature of our problem, we believe that our method is highly efficient, as it avoids excessive interprocessor communication.

Cohl, H.↗
NASA NTRS1995

A 3DGRAPE/AL: The Ames/Langley technology upgrade

This paper describes a new three-dimensional structured multiple-block volume grid generator called 3DGRAPE/AL. It is a significantly improved version of the previously-released and widely-distributed program 3DGRAPE, with many of the improvements taken from the grid-generator program 3DMAGGS. It generates volume grids by iteratively solving the Poisson Equations in three-dimensions. The right-hand-side terms are designed so that user-specified grid cell heights and user-specified grid cell skewness near boundary surfaces result automatically, with little user intervention. Versatility was a high priority in this code's development, and as a result it can generate grids in almost any three-dimensional physical domain. Improvements include added kinds of forcing functions, improved control of cell skewness, improved initial conditions, convergence acceleration, the ability to take as input the output from GRIDGEN, and a simple but powerful graphical user interface (GUI).

Sorenson, Reese L.↗
NASA NTRS1994

General analytic results for nonlinear waves and solitons in molecular clouds

We study nonlinear wave phenomena in self-gravitating fluid systems, with a particular emphasis on applications to molecular clouds. This paper presents analytical results for one spatial dimension. We show that a large class of physical systems can be described by theories with a 'charge density' q(rho); this quantity replaces the density on the right-hand side of the Poisson equation for the gravitational potential. We use this formulation to prove general results about nonlinear wave motions in self-gravitating systems. We show that in order for stationary waves to exist, the total charge (the integral of the charge density over the wave profile) must vanish. This 'no-charge' property for solitary waves is related to the capability of a system to be stable to gravitational perturbations for arbitrarily long wavelengths. We find necessary and sufficient conditions on the charge density for the existence of solitary waves and stationary waves. We study nonlinear wave motions for Jeans-type theories (where q(rho) = rho-rho(sub 0)) and find that nonlinear waves of large amplitude are confined to a rather narrow range of wavelengths. We also study wave motions for molecular clouds threaded by magnetic fields and show how the allowed range of wavelengths is affected by the field strength. Since the gravitational force in one spatial dimension does not fall off with distance, we consider two classes of models with more realistic gravity: Yukawa potentials and a pseudo two-dimensional treatment. We study the allowed types of wave behavior for these models. Finally, we discuss the implications of this work for molecular cloud structure. We argue that molecular clouds can support a wide variety of wave motions and suggest that stationary waves (such as those considered in this paper) may have already been observed.

Adams, Fred C.↗
NASA NTRS1995

3DGRAPE/AL User's Manual

This document is a users' manual for a new three-dimensional structured multiple-block volume g generator called 3DGRAPE/AL. It is a significantly improved version of the previously-released a widely-distributed programs 3DGRAPE and 3DMAGGS. It generates volume grids by iteratively solving the Poisson Equations in three-dimensions. The right-hand-side terms are designed so that user-specific; grid cell heights and user-specified grid cell skewness near boundary surfaces result automatically, with little user intervention. The code is written in Fortran-77, and can be installed with or without a simple graphical user interface which allows the user to watch as the grid is generated. An introduction describing the improvements over the antecedent 3DGRAPE code is presented first. Then follows a chapter on the basic grid generator program itself, and comments on installing it. The input is then described in detail. After that is a description of the Graphical User Interface. Five example cases are shown next, with plots of the results. Following that is a chapter on two input filters which allow use of input data generated elsewhere. Last is a treatment of the theory embodied in the code.

Sorenson, Reese L.↗
NASA NTRS1998

Direct Numerical Simulation of a Coolant Jet in a Periodic Crossflow

A Direct Numerical Simulation of a coolant jet injected normally into a periodic crossflow is presented. The physical situation simulated represents a periodic module in a coolant hole array with a heated crossflow. A collocated finite difference scheme is used which is fifth-order accurate spatially and second-order accurate temporally. The scheme is based on a fractional step approach and requires the solution of a pressure-Poisson equation. The simulations are obtained for a blowing ratio of 0.25 and a channel Reynolds number of 5600. The simulations reveal the dynamics of several large scale structures including the Counter-rotating Vortex Pair (CVP), the horse-shoe vortex, the shear layer vortex, the wall vortex and the wake vortex. The origins and the interactions of these vortical structures are identified and explored. Also presented are the turbulence statistics and how they relate to the flow structures.

Sharma, Chirdeep↗
NASA NTRS1996

Formation of the Electric Double Layer and its Effects on Moving Bodies in a Space Plasma Environment

In this paper we solve the self-consistent Vlasov and Poisson equations by a numerical method to determine the local distribution function of the ion and the electron, within a thin layer near the moving body, respectively. Using these ion and electron distributions, the number density for the ions and electrons are determined, such that, the electric potential is obtained within this thin layer (i.e., measured by Debye length). Numerical results are presented for temporal evolution of the electron and ion density and its corresponding electric potential within the layer which shows the formation of electric double layer and its structures. From these numerical results, we are able to determine the maximum conditions of the electric potential, it may create satellite anomaly.

Yang, Qianli↗
NASA NTRS1999

Random Dopant Induced Threshold Voltage Lowering and Fluctuations in Sub 50 nm MOSFETs: a Statistical 3D 'Atomistic' Simulation Study

A 3D 'atomistic' simulation study of random dopant induced threshold voltage fluctuations and lowering in sub 50 nm MOSFETs is presented. The attention is focused mainly on devices with 30 nm effective channel length which represent the expected level of scaling at the end of the Silicon Roadmap. An efficient algorithm, based on a single 3D ap solution of the Poisson equation and a simplified current continuity equation, is used in the simulations. Large samples of microscopically different devices (typically 200) arc used in order to obtain statistically reliable results. The influence of different aspects of the conventional MOSFET design on the threshold voltage fluctuations and lowering are investigated. Results for fluctuation resistant device architectures based on low-doped epitaxial channel MOSFETs are also presented.

Asenov, Asen↗
NASA NTRS1998

Random Dopant Induced Threshold Voltage Lowering and Fluctuations in Sub-0.1 (micron)meter MOSFET's: A 3-D 'Atomistic' Simulation Study

A three-dimensional (3-D) "atomistic" simulation study of random dopant induced threshold voltage lowering and fluctuations in sub-0.1 microns MOSFET's is presented. For the first time a systematic analysis of random dopant effects down to an individual dopant level was carried out in 3-D on a scale sufficient to provide quantitative statistical predictions. Efficient algorithms based on a single multigrid solution of the Poisson equation followed by the solution of a simplified current continuity equation are used in the simulations. The effects of various MOSFET design parameters, including the channel length and width, oxide thickness and channel doping, on the threshold voltage lowering and fluctuations are studied using typical samples of 200 atomistically different MOSFET's. The atomistic results for the threshold voltage fluctuations were compared with two analytical models based on dopant number fluctuations. Although the analytical models predict the general trends in the threshold voltage fluctuations, they fail to describe quantitatively the magnitude of the fluctuations. The distribution of the atomistically calculated threshold voltage and its correlation with the number of dopants in the channel of the MOSFET's was analyzed based on a sample of 2500 microscopically different devices. The detailed analysis shows that the threshold voltage fluctuations are determined not only by the fluctuation in the dopant number, but also in the dopant position.

Asenov, Asen↗
NASA NTRS2001

2-D Modeling of Nanoscale MOSFETs: Non-Equilibrium Green's Function Approach

We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions and oxide tunneling are treated on an equal footing. Electrons in the ellipsoids of the conduction band are treated within the anisotropic effective mass approximation. Electron-electron interaction is treated within Hartree approximation by solving NEGF and Poisson equations self-consistently. For the calculations presented here, parallelization is performed by distributing the solution of NEGF equations to various processors, energy wise. We present simulation of the "benchmark" MIT 25nm and 90nm MOSFETs and compare our results to those from the drift-diffusion simulator and the quantum-corrected results available. In the 25nm MOSFET, the channel length is less than ten times the electron wavelength, and the electron scattering time is comparable to its transit time. Our main results are: (1) Simulated drain subthreshold current characteristics are shown, where the potential profiles are calculated self-consistently by the corresponding simulation methods. The current predicted by our quantum simulation has smaller subthreshold slope of the Vg dependence which results in higher threshold voltage. (2) When gate oxide thickness is less than 2 nm, gate oxide leakage is a primary factor which determines off-current of a MOSFET (3) Using our 2-D NEGF simulator, we found several ways to drastically decrease oxide leakage current without compromising drive current. (4) Quantum mechanically calculated electron density is much smaller than the background doping density in the poly silicon gate region near oxide interface. This creates an additional effective gate voltage. Different ways to. include this effect approximately will be discussed.

Svizhenko, Alexei↗
NASA NTRS1998

Multi-Dimensional Quantum Effect Simulation Using a Density-Gradient Model and Script-Level Programming Techniques

A density-gradient (DG) model is used to calculate quantum-mechanical corrections to classical carrier transport in MOS (Metal Oxide Semiconductor) inversion/accumulation layers. The model is compared to measured data and to a fully self-consistent coupled Schrodinger and Poisson equation (SCSP) solver. Good agreement is demonstrated for MOS capacitors with gate oxide as thin as 21 A. It is then applied to study carrier distribution in ultra short MOSFETs (Metal Oxide Semiconductor Field Effect Transistor) with surface roughness. This work represents the first implementation of the DG formulation on multidimensional unstructured meshes. It was enabled by a powerful scripting approach which provides an easy-to-use and flexible framework for solving the fourth-order PDEs (Partial Differential Equation) of the DG model.

Rafferty, Connor S.↗
NASA NTRS2002

Coupling Finite Element and Meshless Local Petrov-Galerkin Methods for Two-Dimensional Potential Problems

A coupled finite element (FE) method and meshless local Petrov-Galerkin (MLPG) method for analyzing two-dimensional potential problems is presented in this paper. The analysis domain is subdivided into two regions, a finite element (FE) region and a meshless (MM) region. A single weighted residual form is written for the entire domain. Independent trial and test functions are assumed in the FE and MM regions. A transition region is created between the two regions. The transition region blends the trial and test functions of the FE and MM regions. The trial function blending is achieved using a technique similar to the 'Coons patch' method that is widely used in computer-aided geometric design. The test function blending is achieved by using either FE or MM test functions on the nodes in the transition element. The technique was evaluated by applying the coupled method to two potential problems governed by the Poisson equation. The coupled method passed all the patch test problems and gave accurate solutions for the problems studied.

Chen, T.↗
NASA NTRS2004

Electron Density and Two-Channel Neutron Emission Measurements in Steady-State Spherical Inertial-Electrostatically Confined Plasmas, with Review of the 1-D Kinetic Model

Electron density measurements have been made in steady-state plasmas in a spherical inertial electrostatic confinement (IEC) discharge using microwave interferometry. Plasma cores interior to two cathodes, having diameters of 15 and 23 cm, respectively, were probed over a transverse range of 10 cm with a spatial resolution of about 1.4 cm for buffer gas pressures from 0.2 to 6 Pa in argon and deuterium. The transverse profiles are generally flat, in some cases with eccentric symmetric minima, and give mean densities of from approx. = 0.4 to 7x 10(exp 10)/cu cm, the density generally increasing with the neutral gas pressure. Numerical solutions of the 1-D Poisson equation for EC plasmas are reviewed and energy distribution functions are identified which give flat transverse profiles. These functions are used with the plasma approximation to obtain solutions which also give densities consistent with the measurements, and a double potential well solution is obtained which has minima qualitatively similar to those observed. Explicit consideration is given to the compatibility of the solutions interior and exterior to the cathode, and to grid transparency. Deuterium fusion neutron emission rates were also measured and found to be isotropic, to within the measurement error, over two simultaneous directions. Anisotropy was observed in residual emissions during operation with non-fusing hydrogen-1. The deuterium rates are consistent with predictions from the model.

Dobson, Chris C.↗
NASA NTRS2004

Electron Density and Two-Channel Neutron Emission Measurements in Steady-State Spherical Inertial-Electrostatically Confined Plasmas, with Review of the One-Dimensional Kinetic Model

Electron density measurements have been made in steady-state plasmas in a spherical inertial electrostatic confinement (IEC) discharge using microwave interferometry. Plasma cores interior to two cathodes, having diameters of 15 and 23 cm, respectively, were probed over a transverse range of 10 cm with a spatial resolution of about 1.4 cm for buffer gas pressures from 0.2 to 6 Pa in argon and deuterium. The transverse profiles are generally flat, in some cases with eccentric symmetric minima, and give mean densities of from approx. = 0.4 to 7 x 10(exp 10)/cu cm, the density generally increasing with the neutral gas pressure. Numerical solutions of the one-dimensional Poisson equation for IEC plasmas are reviewed and energy distribution functions are identified which give flat transverse profiles. These functions are used with the plasma approximation to obtain solutions which also give densities consistent with the measurements, and a double potential well solution is obtained which has minima qualitatively similar to those observed. Explicit consideration is given to the compatibility of the solutions interior and exterior to the cathode, and to grid transparency. Deuterium fusion neutron emission rates were also measured and found to be isotropic, to within the measurement error, over two simultaneous directions. Anisotropy was observed in residual emissions during operation with nonfusing hydrogen- 1. The deuterium rates are consistent with predictions from the model.

Dobson, Chris C.↗
NASA NTRSDate not supplied

DC Modeling of 4H-SiC nJFET Gate Length Reduction at 500°C

The development of robust, high-performance integrated circuits (ICs) will enable numerous potential NASA missions of current interest, including long-duration robotic missions exploring the 460°C surface of Venus. Currently, NASA is looking towards SiC-based devices to provide such a solution. However, the current NASA silicon carbide (SiC) JFET device with a channel length of 6 μm (recently fabricated Gen. 11 ICs) limits mission-relevant circuit capabilities. In this study, we combined experiments with simulations to explore two straightforward fabrication strategies (shallow n− and deep n+) to reduce the SiC JFET channel length while maintaining turn-off behavior needed to realize 500 °C circuit operation. First, the material properties for 4H-SiC were implemented in COMSOL and the Poisson equation was solved for twelve 2D device designs. Then, based on the insights gained from the distribution of the electron concentration, electrostatic potential, and electric field for twelve designs (with three fabrication strategies), simulation for a 1 μm gate length nJFET with the turn-off performance comparable to the state-of-the-art.

4H-SiC nJFET↗