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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Modelling integrated quantum frequency processors towards robust quantum networks

Frequency-encoded quantum information offers intriguing opportunities for quantum communications networks, with the quantum frequency processor (QFP) paradigm promising scalable construction of quantum gates. Yet all experimental demonstrations to date have relied on discrete fiber-optic components that occupy significant physical space and impart appreciable loss. We introduce a model for designing QFPs comprising microring resonator-based pulse shapers and integrated phase modulators. We estimate the performance of frequency-bin Hadamard gates, finding high fidelity values sustained for relatively wide-bandwidth frequency bins. Our simple model and can be extended to other material platforms, providing a design tool for future frequency processors in integrated photonics.

Nussbaum, Benjamin↗
DOE OSTI2021

Quantized critical supercurrent in SrTiO 3 -based quantum point contacts

Superconductivity in SrTiO 3 occurs at remarkably low carrier densities and therefore, unlike conventional superconductors, can be controlled by electrostatic gates. Here, we demonstrate nanoscale weak links connecting superconducting leads, all within a single material, SrTiO 3 . Ionic liquid gating accumulates carriers in the leads, and local electrostatic gates are tuned to open the weak link. These devices behave as superconducting quantum point contacts with a quantized critical supercurrent. This is a milestone toward establishing SrTiO 3 as a single-material platform for mesoscopic superconducting transport experiments that also intrinsically contains the necessary ingredients to engineer topological superconductivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Fractional Quantum Anomalous Hall Effect

The realization of the fractional quantum anomalous Hall effect (FQAHE) in a zero-field fractional Chern insulator is a new advancement in condensed matter physics, resulting from the interplay among strong correlations, topology, and spontaneous time-reversal symmetry breaking in lattice systems. In this review, we highlight the experimental and theoretical progress toward achieving FQAHE in two material platforms: twisted bilayer MoTe 2 and rhombohedral-stacked multilayer graphene. These systems host narrow topological bands with nontrivial Chern numbers, enabling interaction-driven fractionalized states analogous to the fractional quantum Hall effect, but without external magnetic fields. We discuss how spontaneous ferromagnetism, moiré lattice reconstruction, and band topological effects underpin the emergence of FQAHE in twisted MoTe 2 . We describe experimental discoveries of zero-field fractional Chern insulators in both transport and optical experiments, as well as signatures of composite Fermi liquids and higher-energy Chern band, which may shed light on engineering nonabelian states. In rhombohedral graphene/hexagonal boron nitride moiré superlattices, we review the recent observations of fractionally quantized Hall resistance, connections between FQAHE and extended quantum anomalous Hall phases, and the coexistence of superconductivity and FQAHE. Furthermore, these discoveries not only deepen our understanding of strongly correlated topological matter but also open new frontiers for exploring nonabelian anyons, fault-tolerant quantum computation, and topological opto-spintronics free of magnetic fields.

bilayer↗
DOE OSTI2021

Group-velocity-dispersion engineering of tantala integrated photonics

Designing integrated photonics, especially to leverage Kerr-nonlinear optics, requires accurate and precise knowledge of the refractive index across the visible to infrared spectral ranges. Tantala ( T a 2 O 5 ) is an emerging material platform for integrated photonics and nanophotonics that offers broadband ultralow loss, moderately high nonlinearity, and advantages for scalable and heterogeneous integration. We present refractive index measurements on a thin film of tantala, and we explore the efficacy of this data for group-velocity-dispersion (GVD) engineering with waveguide and ring-resonator devices. In particular, the observed spectral extent of supercontinuum generation in fabricated waveguides and the wavelength dependence of free spectral range (FSR) in optical resonators provide a sensitive test of our integrated photonics design process. Our work opens up new design possibilities with tantala, including with octave-spanning soliton microcombs.

Black, Jennifer A.↗
DOE OSTI2022

Hybrid quantum nanophotonic devices with color centers in nanodiamonds [Invited]

Optically active color centers in nanodiamonds offer unique opportunities for generating and manipulating quantum states of light. These mechanically, chemically, and optically robust emitters can be produced in mass quantities, deterministically manipulated, and integrated with a variety of quantum device geometries and photonic material platforms. Nanodiamonds with deeply sub-wavelength sizes coupled to nanophotonic structures feature a giant enhancement of light-matter interaction, promising high bitrates in quantum photonic systems. We review the recent advances in controlled techniques for synthesizing, selecting, and manipulating nanodiamond-based color centers for their integration with quantum nanophotonic devices.

Sahoo, Swetapadma (ORCID:0000000179281391)↗
DOE OSTI2025

Ultra-thin photonic crystal slab metalenses [Invited]

We report a novel ultra-thin metalens design based on photonic crystal slab (PCS) resonance modes. We experimentally verified with a metalens structure based on amorphous silicon on a quartz material platform by implementing the optical guided resonance on the PCS. The PCS metalens designs feature an ultra-thin device layer of about 160 nm at an operation wavelength of 940 nm. A full 2π transmission phase transition is realized by varying the air hole sizes at the design wavelength. Metalens devices with different phase change gradients were designed and fabricated to achieve different NAs. A maximum of 86.4% focusing efficiency is achieved. Imaging capabilities are characterized, and clear images are observed within the field of view. The PC resonance-based phase modulation design can be applied to optical beam manipulation, phase plate design, imaging, and laser beam formation applications.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2022

Dynamically tunable second-harmonic generation using hybrid nanostructures incorporating phase-change chalcogenides

Nonlinear metasurfaces with high conversion efficiencies have been vastly investigated. However, strong dynamic tunability of such devices is limited in conventional passive plasmonic and dielectric material platforms. Germanium antimony telluride (GST) is a promising phase-change chalcogenide for the reconfiguration of metamaterials due to strong nonvolatile changes of the real and imaginary parts of the refraction index through amorphous-crystalline phase change. The orderly structured GST has an even higher potential in tunable second-harmonic generation (SHG) with a non-centrosymmetric crystal structure at the crystalline phase, while the amorphous phase of GST does not exhibit bulk second-order nonlinearity. Here, we experimentally demonstrate SHG switches by actively controlling the crystalline phase of GST for a GST-based hybrid metasurface featuring a gap-surface plasmon resonance, and a quarter-wave asymmetric Fabry–Perot (F–P) cavity incorporating GST. We obtain SHG switches with modulation depths as high as ~ 20 dB for the wavelengths at the on-state resonance. We also demonstrate the feasibility of multi-level SHG modulation by leveraging three controlled GST phases, i.e., amorphous, semi-crystalline, and crystalline, for the gap-surface plasmon hybrid device, which features stronger light–matter interaction and has higher resonant SHG efficiencies than the asymmetric F–P cavity device at respective GST phases. This research reveals that GST-based dynamic SHG switches can be potentially employed in practical applications, such as microscopy, optical communication, and photonic computing in the nonlinear regime.

42 ENGINEERING↗
DOE OSTI2022

A perspective on Bayesian methods applied to materials discovery and design

For more than two decades, there has been increasing interest in developing frameworks for the accelerated discovery and design of novel materials that could enable promising and transformative technologies. The Integrated Computational Materials Engineering (ICME) program called for integrating computational tools to establish linkages along process-structure-property-performance (PSPP) chains. The Materials Genome Initiative called for integrating experiments and computations within data science frameworks as a strategy to accelerate the materials development cycle. While these frameworks and paradigms have been quite influential, traditional ICME or data science-based approaches tend to have some limitations, mainly when querying the materials space is costly and very little information is available. Bayesian methods are more suitable in this context due to their efficiency gains. To this end, the materials discovery problem is framed as a Bayesian Optimization (BO). Different examples in which BO has been applied to solve materials discovery problems are presented. The methods/examples discussed include BO under model uncertainty, multi-information source BO, multi-objective and multi-constraint BO, and batch BO. Bayesian Materials Discovery is a promising area of research that is likely to become more influential as more attention is put on autonomous materials discovery platforms. Therefore, a discussion is provided on the potential development of such methods to increase the ability of existing platforms in materials discovery. Here, the ultimate goal is to pave the way to autonomous materials discovery.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Vapor-Processing of Metal-Halide Perovskites for Photovoltaics and Optoelectronics

Metal-halide perovskites are an exciting materials platform for next generation optoelectronic devices and solar cells. In this presentation, we review our work in processing metal-halide perovskites via a dry, carrier-gas assisted vapor deposition method, and its ability to be useful for the formation of all-perovskite heterojunctions. We also outline recent work demonstrating the viability of this method for the deposition of lead-based perovskites via co-deposition.

14 SOLAR ENERGY↗
DOE OSTI2022

Modeling Vapor Transport Deposition of Metal-halide Perovskite Thin Films for Photovoltaic and Optoelectronic Devices

Over the past decade, metal halide perovskites (MHPs) have emerged as a promising materials platform for high-efficiency solar cells and low-cost optoelectronics. However, there are challenges that frustrate the large-scale manufacturing of MHP devices, including difficulty in controlling film composition, interface formation and their device instability under ambient conditions. Vapor processing offers an attractive path to manufacturability, while also opening the door to new opportunities in device design that could favorably impact ultrahigh efficiency tandem solar cells or overall stability. Emphasis here is on the use of an alternate processing methodology, vapor transport deposition (VTD), to deposit the MHP layer. In experimental work, we found that our deposition system had significant run-to-run variations in film thickness and composition. To understand and resolve these issues, we use COMSOL Multiphysics software to model the precursor deposition rate numerically, trying to guide the broad range of parameters in the system. The result can be matched with experimental data and provides insight into system hydrodynamics and molar transport effects. Finally, we show that chamber pressure is a key factor to scale up the VTD technique.

Hsu, Wan-Ju↗
DOE OSTI2025

A New Route to Improve the Material Quality of Nb3Sn with Zr Inclusion

Nb3Sn superconducting material promises significant potential to exceed the performance of niobium based superconducting radio frequency (SRF) accelerator cavities. With the aim of advancing the ongoing R&D efforts in improving the material quality of Nb3Sn SRF cavities, we studied how the inclusion of Zr in Nb3Sn matrix via co-sputtering process effects the microscopic structure and superconducting properties. Our results suggest co-sputtered Nb3SnZr alloy as a new prospective material platform to further advance the performance limits of SRF cavities.

Tripathi, Malvika [Fermilab]↗
DOE OSTI2022

Modeling Vapor Transport Deposition of Metal-halide Perovskite Thin Films for Photovoltaic and Optoelectronic Devices

Over the past decade, metal halide perovskites (MHPs) have emerged as a promising materials platform for high-efficiency solar cells and low-cost optoelectronics. However, there are challenges that frustrate the large-scale manufacturing of MHP devices, including difficulty in controlling film composition, interface formation and their device instability under ambient conditions. Vapor processing offers an attractive path to manufacturability, while also opening the door to new opportunities in device design that could favorably impact ultrahigh efficiency tandem solar cells or overall stability. Emphasis here is on the use of an alternate processing methodology, vapor transport deposition (VTD), to deposit the MHP layer. In experimental work, we found that our deposition system had significant run-to-run variations in film thickness and composition. To understand and resolve these issues, we use COMSOL Multiphysics software to model the precursor deposition rate numerically, trying to guide the broad range of parameters in the system. The result can be matched with experimental data and provides insight into system hydrodynamics and molar transport effects. Finally, we show that chamber pressure is a key factor to scale up the VTD technique.

Hsu, Wan-Ju↗
DOE OSTI2025

From Quantum to Classical: Sensing Materials, Methods, and Platforms for Energy

This presentation covers several ongoing sensors projects at NETL, including the use of quantum sensors for energy sector applications (e.g. infrastructure monitoring, critical metal detection, grid modernization) as well as NETL-developed materials and platforms for detecting economically critical metals including rare earth elements, cobalt, and aluminum. Taken together, these projects demonstrate NETL's leadership in unleashing American energy through the development of high performance sensors for reliable energy production and consumption.

critical minerals↗
DOE OSTI2020

Heterobilayers of 2D materials as a platform for excitonic superfluidity

Excitonic condensate has been long-sought within bulk indirect-gap semiconductors, quantum wells, and 2D material layers, all tried as carrying media. Here, we propose intrinsically stable 2D semiconductor heterostructures with doubly-indirect overlapping bands as optimal platforms for excitonic condensation. After screening hundreds of 2D materials, we identify candidates where spontaneous excitonic condensation mediated by purely electronic interaction should occur, and hetero-pairs Sb 2 Te 2 Se/BiTeCl, Hf 2 N 2 I 2 /Zr 2 N 2 Cl 2 , and LiAlTe 2 /BiTeI emerge promising. Unlike monolayers, where excitonic condensation is hampered by Peierls instability, or other bilayers, where doping by applied voltage is required, rendering them essentially non-equilibrium systems, the chemically-specific heterostructures predicted here are lattice-matched, show no detrimental electronic instability, and display broken type-III gap, thus offering optimal carrier density without any gate voltages, in true-equilibrium. Predicted materials can be used to access different parts of electron-hole phase diagram, including BEC-BCS crossover, enabling tantalizing applications in superfluid transport, Josephson-like tunneling, and dissipationless charge counterflow.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Amorphous 2D Materials – A Novel Platform for Remote Epitaxy and Nanopatterned Epitaxy of III-V Semiconductors with Low Decomposition Temperatures

III-V semiconductor materials such as indium phosphide (InP) offer outstanding photonic properties that outperforms silicon, but the cost of these wafers is extremely expensive. Although reusing original wafers can effectively minimize the cost, current techniques for wafer recycling of these substrates add significant costs in fabrication, nullifying the cost savings by reusing the wafers. Besides, unlike other III-V materials such as gallium arsenide (GaAs), commonly used epitaxial lift-off method for wafer recycling is not well studied for materials like InP due to lack of lattice-matched sacrificial layers, which makes reusing these wafers more difficult. Remote epitaxy and nanopatterned epitaxy are newly discovered methods that enable single-crystal growth of III-V semiconductor thin films and easy exfoliation of these grown films, thus promising for a new cost-effective pathway of reusing wafers. However, previous methods of transferring two-dimensional (2D) materials, which use polymethyl methacrylate (PMMA) or metal stressor layers to transfer 2D materials grown on foreign substrates like copper (Cu) or silicon carbide (SiC), introduce defects and damages on the 2D layer and/or substrates during the transfer process. Remote epitaxial and nanopatterned epitaxial films grown on the damaged 2D layer/substrate suffer from lower crystal quality and imperfect exfoliation, which undermines wafer reusability and device performance. Here we report the MBE growth of amorphous boron nitride (a-BN) on InP wafers at low temperature that enabled improved quality of remote epitaxial and nanopatterned epitaxial films and their perfect exfoliation. We show fully covered a-BN on InP substrates despite their low decomposition temperatures. The surface of a-BN coated InP substrate remains smooth with a RMS roughness of around 3Â. We also demonstrate 100% coverage of single-crystal InP thin films grown on a-BN, with the film's quality significantly improved compared to the case of transferred 2D materials. In addition, the growth and exfoliation were successfully repeated multiple times, proving the feasibility for InP wafer recycling. Through this low temperature MBE growth approach with remote epitaxy and nanopatterned epitaxy, we successfully demonstrate large-scale flexible thin film exfoliation and recycling of InP substrates, which will lead to new opportunities in InP thin film-based photonics and novel heterostructures with significantly reduced cost.

Lu, Kuangye↗
DOE OSTI2022

Amorphous 2D Materials – A Novel Platform for Remote Epitaxy and Nanopatterned Epitaxy of III-V Semiconductors with Low Decomposition Temperatures

III-V semiconductor materials such as indium phosphide (InP) offer outstanding photonic properties that outperforms silicon, but the cost of these wafers is extremely expensive. Although reusing original wafers can effectively minimize the cost, current techniques for wafer recycling of these substrates add significant costs in fabrication, nullifying the cost savings by reusing the wafers. Besides, unlike other III-V materials such as gallium arsenide (GaAs), commonly used epitaxial lift-off method for wafer recycling is not well studied for materials like InP due to lack of lattice-matched sacrificial layers, which makes reusing these wafers more difficult. Remote epitaxy and nanopatterned epitaxy are newly discovered methods that enable single-crystal growth of III-V semiconductor thin films and easy exfoliation of these grown films, thus promising for a new cost-effective pathway of reusing wafers. However, previous methods of transferring two-dimensional (2D) materials, which use polymethyl methacrylate (PMMA) or metal stressor layers to transfer 2D materials grown on foreign substrates like copper (Cu) or silicon carbide (SiC), introduce defects and damages on the 2D layer and/or substrates during the transfer process. Remote epitaxial and nanopatterned epitaxial films grown on the damaged 2D layer/substrate suffer from lower crystal quality and imperfect exfoliation, which undermines wafer reusability and device performance. Here we report the MBE growth of amorphous boron nitride (a-BN) on InP wafers at low temperature that enabled improved quality of remote epitaxial and nanopatterned epitaxial films and their perfect exfoliation. We show fully covered a-BN on InP substrates despite their low decomposition temperatures. The surface of a-BN coated InP substrate remains smooth with a RMS roughness of around 3Å. We also demonstrate 100% coverage of single-crystal InP thin films grown on a-BN, with the film's quality significantly improved compared to the case of transferred 2D materials. In addition, the growth and exfoliation were successfully repeated multiple times, proving the feasibility for InP wafer recycling. Through this low temperature MBE growth approach with remote epitaxy and nanopatterned epitaxy, we successfully demonstrate large-scale flexible thin film exfoliation and recycling of InP substrates, which will lead to new opportunities in InP thin film-based photonics and novel heterostructures with significantly reduced cost.

Lu, Kuangye↗
DOE OSTI2025

Instantiation of the Damara Tern Platform for Advanced Materials and Manufacturing Technologies (AMMT) Program Collaborative Data Management

This work package focused on deploying an instance of the Damara Tern platform to support AMMT collaborative research activities. The objectives were to provide selected AMMT collaborators with access to a shared environment for capturing operations, trackables, and associated metadata, and to implement data entry functionalities that reflect site-specific procedures. Key activities included creating configurable, schema-driven entry forms and validating the data collection process. The report details the deployment process, the platform infrastructure, and the implemented data entry workflows, providing a reference for end users and establishing a foundation for future production-scale deployments.

36 MATERIALS SCIENCE↗